20ETS12PBF [INFINEON]
INPUT RECTIFIER DIODE Lead-Free (PbF suffix); 输入整流二极管无铅（的PbF后缀）
| 型号： | 20ETS12PBF |
| 厂家： | 
Infineon |
| 描述： | INPUT RECTIFIER DIODE Lead-Free (PbF suffix) |
| 文件： | 总6页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2192 12/04
SAFEIR Series
20ETS12PbF
INPUT RECTIFIER DIODE
Lead-Free ("PbF" suffix)
VF < 1V @ 10A
IFSM = 300A
VRRM = 1200V
Description/ Features
The 20ETS12PbF rectifier SAFEIR series has
been optimized for very low forward voltage drop,
with moderate leakage. The glass passivation
technologyusedhasreliableoperationupto150°C
junction temperature.
Typical applications are in input rectification and
these products are designed to be used with
International Rectifier Switches and Output
Rectifiers which are available in identical package
outlines.
Output Current in Typical Applications
Applications
Single-phase Bridge Three-phase Bridge
Units
Capacitive input filter TA = 55°C, TJ =125°C,
common heatsink of 1°C/W
A
16.3
21
Major Ratings and Characteristics
Package Outline
Characteristics
Values
Units
I
Sinusoidal
waveform
F(AV)
20
1200
300
1.0
A
V
A
V
V
I
RRM
FSM
V
@10A, T =25°C
J
F
J
T
-40to150
°C
TO-220AC
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1
20ETS12PbF SAFEIR Series
Bulletin I2192 12/04
Voltage Ratings
VRRM, maximum
peak reverse voltage
V
VRSM , maximum non repetitive
IRRM
150°C
mA
peak reverse voltage
V
Part Number
20ETS12PbF
1200
1300
1
Absolute Maximum Ratings
Parameters
20ETS.. Units
Conditions
IF(AV) Max. Average Forward Current
20
A
@TC =105°C, 180°conductionhalfsinewave
IFSM Max.PeakOneCycleNon-Repetitive
Surge Current
250
300
10msSinepulse, ratedVRRMapplied
10msSine pulse,novoltagereapplied
A
I2t
Max.I2tforfusing
316
442
10msSinepulse, ratedVRRMapplied
10msSinepulse,novoltagereapplied
t=0.1to10ms, novoltagereapplied
A2s
I2√t Max.I2√tforfusing
4420
A2√s
Electrical Specifications
Parameters
20ETS.. Units
Conditions
VFM Max. Forward Voltage Drop
1.1
10.4
0.85
0.1
V
mΩ
V
@ 20A, TJ = 25°C
rt
Forward slope resistance
TJ = 150°C
VF(TO) Threshold voltage
IRM Max. Reverse Leakage Current
TJ = 25 °C
mA
VR = rated VRRM
1.0
TJ = 150 °C
Thermal-Mechanical Specifications
Parameters
20ETS.. Units
Conditions
TJ
Max. Junction Temperature Range
-40to150
-40to150
1.3
°C
°C
Tstg Max. Storage Temperature Range
RthJC Max. Thermal Resistance Junction
toCase
°C/W
DC operation
RthJA Max. Thermal Resistance Junction
to Ambient
62
°C/W
(*) For D2Pakversion
RthCS Typ. Thermal Resistance Case
to Heatsink
0.5
°C/W
g(oz.)
Mountingsurface,smoothandgreased
wt
Approximate Weight
2(0.07)
T
Mounting Torque
Min.
Max.
6(5)
12(10)
Kg-cm
(Ibf-in)
CaseStyle
Device Marking
TO-220AC
10ETS12
*Whenmountedon1"square(650mm2)PCBofFR-4orG-10material4oz(140µm)copper40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
2
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20ETS12PbF SAFEIR Series
Bulletin I2192 12/04
150
150
140
130
120
110
100
90
20ETS.. Series
thJC
2 0ETS. . Se ri e s
(DC) = 1.3 °C/W
R
(DC) = 1.3 °C/W
R
thJC
140
130
120
110
100
90
Conduction Period
Conduction Angle
30°
60°
90°
120°
180°
60°
90°
120°
30°
DC
30
180°
10 12 14 16 18 20 22
Average Forward Current (A)
0
2
4
6
8
0
5
10
15
20
25
35
Average Forward Current (A)
Fig. 1-CurrentRatingCharacteristics
Fig. 2-CurrentRatingCharacteristics
30
25
20
15
10
5
35
30
25
20
15
10
5
180°
120°
90°
DC
180°
120°
90°
60°
60°
30°
30°
RM S Lim it
RM S Lim it
Conduction Angle
20ETS.. Series
Conduction Period
20ETS.. Series
T = 150°C
J
T = 150°C
J
0
0
0
4
8
12
Average Forward Current (A)
Fig. 3-ForwardPowerLossCharacteristics
16
20
24
0
5
10
15
20
25
Average Forward Current (A)
Fig. 4-ForwardPowerLossCharacteristics
300
250
200
150
100
50
300
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T = 150°C
J
Initial T = 150°C
J
250
200
150
100
50
@60 Hz 0.0083 s
No Voltage Reapplied
@50 Hz 0.0100 s
Rated V
Reapplied
RRM
20ETS.. Series
20ETS.. Series
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
Fig. 6-MaximumNon-RepetitiveSurgeCurrent
Fig. 5-MaximumNon-RepetitiveSurgeCurrent
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3
20ETS12PbF SAFEIR Series
Bulletin I2192 12/04
1000
T = 25°C
J
100
10
1
T = 150°C
J
20ETS.. Series
0
0.5
InstantaneousForward Voltage (V)
Fig. 7-ForwardVoltageDropCharacteristics
1
1.5
2
2.5
3
3.5
4
10
1
Steady State Value
(DC Operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
0.01
Single Pulse
20ETS.. Series
0.1
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
Fig. 8-ThermalImpedanceZthJC Characteristics
1
4
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20ETS12PbF SAFEIR Series
Bulletin I2192 12/04
Outline Table
10.54 (0.41)
MAX.
2
1.32 (0.05)
1.22 (0.05)
3.78 (0.15)
3.54 (0.14)
DIA.
6.48 (0.25)
6.23 (0.24)
2.92 (0.11)
2.54 (0.10)
TERM 2
15.24 (0.60)
14.84 (0.58)
Base
Cathode
2
2°
1
3
14.09 (0.55)
13.47 (0.53)
3.96 (0.16)
3.55 (0.14)
0.10 (0.004)
2.04 (0.080) MAX.
1
3
Cathode
Anode
1.40 (0.05)
1.15 (0.04)
2.89 (0.11)
2.64 (0.10)
0.94 (0.04)
0.69 (0.03)
1
3
0.61 (0.02) MAX.
4.57 (0.18)
4.32 (0.17)
TO-220AC
Dimensions in millimeters (inches)
5.08 (0.20) REF.
Part Marking Information
IRMX Assembly Line
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE: THIS IS A 20ETS12
LOT CODE 1789
ASSEMBLED ON WW 19, 2001
IN THE ASSEMBLY LINE "C"
YEAR 1 = 2001
WEEK 19
P = LEAD-FREE
ASSEMBLY
LOT CODE
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5
20ETS12PbF SAFEIR Series
Bulletin I2192 12/04
Ordering Information Table
Device Code
20
E
T
S
12 PbF
2
4
5
6
1
3
1
2
-
-
Current Rating (20 = 20A)
Circuit Configuration
E = Single Diode
Package
T = TO-220AC
Type of Silicon
3
4
-
-
S = Standard Recovery Rectifier
Voltage Rating (12 = 1200V)
y none = Standard Production
y PbF = Lead-Free
5
6
-
-
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 01/05
6
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