1N5818TR [INFINEON]

SCHOTTKY RECTIFIER 1.0 Amp; 肖特基整流器1.0安培
1N5818TR
型号: 1N5818TR
厂家: Infineon    Infineon
描述:

SCHOTTKY RECTIFIER 1.0 Amp
肖特基整流器1.0安培

整流二极管
文件: 总5页 (文件大小:88K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Bulletin PD-20590 rev. B 11/04  
1N5818  
1N5819  
SCHOTTKY RECTIFIER  
1.0 Amp  
Major Ratings and Characteristics  
Description/Features  
The 1N5818/ 1N5819 axial leaded Schottky rectifier has been  
optimized for very low forward voltage drop, with moderate  
leakage. Typical applications are in switching power supplies,  
converters, free-wheeling diodes, and reverse battery  
protection.  
Characteristics  
Values  
Units  
I
Rectangular  
waveform  
1.0  
A
F(AV)  
Low profile, axial leaded outline  
V
I
30/40  
225  
V
A
V
RRM  
High purity, high temperature epoxy encapsulation for  
@tp=5µssine  
enhanced mechanical strength and moisture resistance  
FSM  
Very low forward voltage drop  
High frequency operation  
V
@1Apk,T =25°C  
J
0.55  
F
J
Guardringforenhancedruggednessandlongterm  
reliability  
T
range  
-40 to150  
°C  
Lead-Freeplating  
CASE STYLE AND DIMENSIONS  
DeviceMarking: 1N581X  
Conform to JEDEC Outline DO-204AL (DO-41)  
Dimensions in millimeters and inches  
www.irf.com  
1
1N5818, 1N5819  
Bulletin PD-20590 rev. B 11/04  
Voltage Ratings  
Part number  
1N5818  
1N5819  
VR  
Max. DC Reverse Voltage (V)  
30  
40  
VRWM Max. Working Peak Reverse Voltage (V)  
Absolute Maximum Ratings  
Parameters  
Value Units  
Conditions  
IF(AV) Max.AverageForwardCurrent  
*SeeFig.4  
1.0  
A
50%dutycycle@TL =90°C,rectangularwaveform  
IFSM Max.PeakOneCycleNon-Repetitive  
SurgeCurrent *SeeFig.6  
225  
35  
5µs Sineor3µsRect.pulse  
10msSineor6msRect.pulse  
Following any rated  
load condition and with  
rated VRRM applied  
A
Electrical Specifications  
Parameters  
1N5818 1N5819 Units  
Conditions  
VFM Max. Forward Voltage Drop  
0.55  
0.71  
0.875  
0.5  
0.6  
0.73  
0.9  
V
V
V
V
V
@ 1A  
* See Fig. 1  
(1)  
@ 2A  
@ 3A  
@ 1A  
@ 2A  
TJ = 25 °C  
0.55  
0.63  
0.61  
TJ = 125 °C  
0.77  
0.79  
V
mA  
mA  
mA  
pF  
@ 3A  
IRM  
Max. Reverse Leakage Current  
1.0  
6.0  
12  
T J = 25°C  
T J = 100°C  
T J = 125°C  
* See Fig. 2  
(1)  
VR = rated VR  
CT  
LS  
Max. Junction Capacitance  
Typical Series Inductance  
60  
VR = 5VDC (test signal range 100 to 1Mhz) 25°C  
Measured lead to lead 5mm from pack. body  
8.0  
nH  
dv/dt Max. Voltage Rate of Change  
(Rated VR)  
10000  
V/µs  
(1) Pulse Width < 300µs, Duty Cycle < 2%  
Thermal-Mechanical Specifications  
Parameters  
Value Units  
Conditions  
TJ  
Max.JunctionTemperatureRange  
-40 to150  
-40 to150  
80  
°C  
°C  
Tstg Max.StorageTemperatureRange  
RthJL Max.Thermal Resistance Junction  
°C/W DC operation (* See Fig. 4)  
to Lead  
(2)  
wt  
ApproximateWeight  
CaseStyle  
0.33(0.012) g(oz.)  
DO-204AL(DO-41)  
(2) Mounted 1 inch square PCB, thermal probe connected to lead 2mm from package  
www.irf.com  
2
1N5818, 1N5819  
Bulletin PD-20590 rev. B 11/04  
100  
10  
T
= 150˚C  
10  
J
1
125˚C  
25˚C  
0.1  
0.01  
0.001  
0.0001  
0
10  
20  
30  
40  
Reverse Voltage - VR (V)  
1
Fig.2-Typical Values Of Reverse Current  
Vs. Reverse Voltage  
100  
Tj = 150˚C  
Tj = 125˚C  
Tj = 25˚C  
T
= 25˚C  
J
0.1  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
10  
Forward Voltage Drop-VFM (V)  
Fig.1-Typ. Forward Voltage Drop Characteristics  
0
10  
20  
30  
40  
50  
Reverse Voltage - VR (V)  
Fig.3-Typical Junction Capacitance  
Vs. Reverse Voltage  
www.irf.com  
3
1N5818, 1N5819  
Bulletin PD-20590 rev. B 11/04  
0.8  
0.6  
0.4  
0.2  
0
160  
140  
DC  
120  
100  
RMS Limit  
D = 0.20  
D = 0.25  
D = 0.33  
D = 0.50  
D = 0.75  
80  
60  
40  
Square wave (D = 0.50)  
Rated Vr applied  
DC  
see note (3)  
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6  
0
0.5  
1
1.5  
Average Forward Current - I F(AV) (A)  
Average Forward Current - I F(AV) (A)  
Fig.4-Typ. Allowable LeadTemperature  
Vs. Average Forward Current  
Fig.5-Forward Power Loss Characteristics  
1000  
At Any Rated Load Condition  
And With Rated V  
Following Surge  
Applied  
RRM  
100  
10  
10  
100  
1000  
10000  
Square Wave Pulse Duration-tp (microsec)  
Fig. 6 - Typ . Non-Repetitive Surge Current  
(2) Formulaused:TC=TJ -(Pd+PdREV)xRthJC  
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);  
PdREV =InversePowerLoss=VR1 xIR (1-D); IR @VR1=80%ratedVR  
www.irf.com  
4
1N5818, 1N5819  
Bulletin PD-20590 rev. B 11/04  
Ordering Information Table  
Device Code  
1N5819  
TR  
2
1
1N5818 = 1A, 30V  
1N5819 = 1A, 40V  
1
2
-
-
Part Number  
TR= Tape & Reel package (5000 pcs)  
= Box package (1000 pcs)  
-
Data and specifications subject to change without notice.  
This product has been designed and qualified for Industrial Level and Lead-Free.  
Qualification Standards can be found on IR's Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7309  
Visit us at www.irf.com for sales contact information. 11/04  
www.irf.com  
5

相关型号:

1N5818TR-RPCU

Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, DO-41SP, 2 PIN
CENTRAL

1N5818TRPBF

暂无描述
INFINEON

1N5818TRTIN/LEAD

Rectifier Diode,
CENTRAL

1N5818U06

Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41
RECTRON

1N5818W

SCHOTTKY BARRIER RECTIFIERS
SEMTECH

1N5818W

For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications.
TYSEMI

1N5818W-W

Rectifier Diode,
RECTRON

1N5818WB

1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE
SEMTECH

1N5818WB

SCHOTTKY BARRIER DIODES
EIC

1N5818WS

Schottky Barrier Diodes
KEXIN

1N5818WS

For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications.
TYSEMI

1N5818WV-W

Rectifier Diode,
RECTRON