16SYQ030CPBF [INFINEON]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 30V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, CERAMIC, TO-257AA, 3 PIN;型号: | 16SYQ030CPBF |
厂家: | Infineon |
描述: | Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 30V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, CERAMIC, TO-257AA, 3 PIN 局域网 功效 二极管 |
文件: | 总4页 (文件大小:47K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD -93952C
SCHOTTKYRECTIFIER
HIGH EFFICIENCY SERIES
16SYQ030C
16A, 30V
Major Ratings and Characteristics
Description/Features
The 16SYQ030C Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic isolated
TO-257AA ceramic package. The device's forward voltage
drop and reverse leakage current are optimized for the
lowest power loss and the highest circuit efficiency for typical
high frequency switching power supplies and resonent
powerconverters. Full MIL-PRF-19500 quality conformance
testing is available on source control drawings to TX, TXV
and S levels.
Characteristics
16SYQ030C Units
IF(AV)
16
30
A
V
A
VRRM
IFSM @ tp = 8.3ms half-sine
300
V
F
@ 16Apk, TJ =125°C
0.49
V
TJ,Tstg Operating and storage -55 to 150
°C
• Hermetically Sealed
• Ceramic Eyelets
• Low Forward Voltage Drop
• High Frequency Operation
• Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Lightweight
0.13 [.005]
A
5.08 [.200]
4.83 [.190]
3.81 [.150]
3.56 [.140]
10.66 [.420]
10.42 [.410]
3X Ø
1.14 [.045]
0.89 [.035]
CASE STYLE
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
B
10.92 [.430]
10.42 [.410]
1
2
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
0.88 [.035]
0.64 [.025]
3X Ø
3.05 [.120]
Ø 0.50 [.020]
C
A
B
CATHODE OPEN ANODE
CaseOutlineandDimensions-TO-257AA
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1
03/27/02
16SYQ030C
Voltage Ratings
Part number
Max. DC Reverse Voltage (V)
16SYQ030C
30
VR
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
Limits Units
Conditions
IF(AV) Max. AverageForwardCurrent
16
A
50% duty cycle @ TC = 133°C, square waveform
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive
Surge Current
300
A
@ tp = 8.3 ms half-sine
ElectricalSpecifications
Parameters
Limits Units
Conditions
VFM
Max. ForwardVoltageDrop
0.55
0.61
0.47
0.55
0.38
0.49
1.0
V
@ 10A
TJ=-55°C
TJ = 25°C
TJ = 125°C
See Fig. 1
V
@ 16A
V
@ 10A
V
@ 16A
V
@ 10A
V
@ 16A
IRM
Max. Reverse Leakage Current
mA
mA
mA
TJ = 25°C
TJ = 100°C
TJ = 125°C
See Fig. 2
85
VR = rated VR
230
CT
Max. Junction Capacitance
Typical Series Inductance
4000
9.8
pF
nH
VR = 5VDC ( 1MHz, 25°C )
L S
Measured from anode lead to cathode lead
6mm ( 0.025 in.) from package
Thermal-MechanicalSpecifications
Parameters
Limits Units
Conditions
TJ
Max.JunctionTemperatureRange
-55 to 150
-55 to 150
1.15
°C
Tstg
Max.StorageTemperatureRange
°C
RthJC Max. Thermal Resistance, Junction
to Case
°C/W
DCoperation
See Fig. 4
wt
Weight(Typical)
Die Size
4.3
g
200X200
mils
Case Style
TO-257AA
Pulse Width < 300µs, Duty Cycle < 2%
2
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16SYQ030C
1000
100
10
125°C
100°C
75°C
1
100
10
1
0.1
0.01
25°C
0
10
20
30
Reverse Voltage - V (V)
R
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Tj = 125°C
Tj = 25°C
10000
T
= 25°C
J
Tj = -55°C
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Forward Voltage Drop - V (V)
F
1000
0
10
20
30
Reverse Voltage -V (V)
R
Fig. 1 - Max. Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
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3
16SYQ030C
10
1
D = 0.50
0.20
0.10
P
DM
0.1
t
1
0.05
t
2
0.02
0.01
Notes:
SINGLE PULSE
(THERMAL RESPONSE)
1. Duty factor D =
t
/ t
1 2
2. Peak T =P
J
x
Z
+ T
thJC C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
180
16SYQ030C
thJC
160
R
= 1.15°C/W
140
120
100
80
DC
60
40
20
0
0
10
20
30
Average Forward Current - I
(A)
F(AV)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/02
4
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