16F80MPBF [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 16A, 800V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT, DO-4, 1 PIN;型号: | 16F80MPBF |
厂家: | Infineon |
描述: | Rectifier Diode, 1 Phase, 1 Element, 16A, 800V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT, DO-4, 1 PIN 二极管 |
文件: | 总6页 (文件大小:157K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I20204 rev. B 01/05
16F(R) SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
High surge current capability
Avalanche types available
Stud cathode and stud anode version
Wide current range
16 A
Types up to 1200V VRRM
Typical Applications
Battery charges
Converters
Power supplies
Machine tool controls
Major Ratings and Characteristics
Parameters
16F(R)
Units
A
IF(AV)
16
@ TC
140
25
°C
A
IF(RMS)
IFSM
@50Hz
@ 60Hz
@50Hz
@ 60Hz
range
350
A
370
A
I2t
612
A2s
A2s
V
560
VRRM
TJ
100 to 1200
- 65 to 175
case style
DO-203AA (DO-4)
range
°C
1
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16F(R) Series
Bulletin I20204 rev. B 01/05
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM, maximum
VRSM, maximum non-
VR(BR), minimum
IRRM max.
@ TJ = 175°C
Type number
repetitive peak
reverse voltage
V
repetitive peak
reverse voltage
V
avalanche
voltage
V
--
(1)
mA
10
20
100
200
150
275
--
40
60
80
100
120
400
600
800
1000
1200
500
725
950
1200
1400
500
750
950
1150
1350
16F(R)
12
(1) Avalanche version only available from VRRM 400V to 1200V.
Forward Conduction
Parameter
16F(R)
Units Conditions
IF(AV) Max. average forward current
@ Case temperature
IF(RMS) Max. RMS forward current
16
140
25
A
°C
A
180° conduction, half sine wave
PR
Maximum non-repetitive
peak reverse power
15
K/W 10µs square pulse, TJ = TJ max.
see note (2)
IFSM
Max. peak, one-cycle forward,
350
370
295
310
612
560
435
395
6120
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
non-repetitive surge current
A
100% VRRM
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
No voltage
reapplied
100% VRRM
reapplied
Initial T = TJ max.
J
A2s
I2√t
Maximum I2√t for fusing
A2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
0.77
0.90
7.80
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
voltage
V
VF(TO)2 High level value of threshold
voltage
(I > π x IF(AV)), TJ = TJ max.
r 1
f
Low level value of forward
slope resistance
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
r 2
f
High level value of forward
slope resistance
5.70
1.23
(I > π x IF(AV)), TJ = TJ max.
VFM
Max. forward voltage drop
V
I = 50A, TJ = 25°C, t = 400µs rectangular wave
pk p
(2) Available only for Avalanche version, all other parameters the same as 16F.
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2
16F(R) Series
Bulletin I20204 rev. B 01/05
Thermal and Mechanical Specifications
Parameter
16F(R)
Units Conditions
TJ
T
Max.junctionoperatingtemperaturerange
Max. storagetemperaturerange
-65 to 175
-65 to 200
°C
stg
RthJC Max. thermalresistance, junctiontocase
1.6
0.5
DC operation
K/W
RthCS Max. thermal resistance, case
to heatsink
Mountingsurface, smooth, flatand
greased
Not lubricated threads
T
Allowable mounting torque
1.5 +0-10%
13
1.2 +0-10%
Nm
lbf.in
Nm
Lubricated threads
10
lbf.in
wt
Approximate weight
Casestyle
7 (0.25)
g (oz)
DO-203AA(DO-4)
SeeOutlineTable
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.31
0.38
0.49
0.72
1.20
0.23
0.40
0.54
0.75
1.21
K/W
60°
30°
Ordering Information Table
Device Code
A
16
F
R
120
M
1
2
3
4
5
6
1
-
A
= Avalanche diode
None = Standard diode
2
3
4
-
-
-
Current rating: Code = IF(AV)
F
= Standard device
None = Stud Normal Polarity (Cathode to Stud)
= Stud Reverse Polarity (Anode to Stud)
R
5
6
-
-
Voltage code: Code x 10 = VRRM (See Voltage Ratings table)
None = Stud base DO-203AA (DO-4) 10-32UNF-2A
M
= Stud base DO-203AA (DO-4) M5 X 0.8 - (Not available for Avalanche diodes)
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3
16F(R) Series
Bulletin I20204 rev. B 01/05
Outlines Table
Case Style DO-203AA (DO-4)
All dimensions in millimeters (inches)
180
180
16F(R) Series
thJC
16F(R) Series
thJC
R
(DC) = 1.6 K/W
R
(DC) = 1.6 K/W
170
160
150
140
130
170
160
150
140
130
Conduction Angle
Conduction Period
90°
60°
90°
120°
180°
120°
15
60°
30°
180°
DC
30°
8
0
4
12
16
20
0
5
10
20
25
30
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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4
16F(R) Series
Bulletin I20204 rev. B 01/05
20
16
12
8
180°
120°
90°
t
h
S
A
60°
8
30°
K
/
W
RMS Limit
Conduction Angle
16F(R) Series
4
T = 175°C
J
0
0
4
8
12
16
200
25
50
75
100
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
Fig. 3-ForwardPowerLossCharacteristics
25
20
15
10
5
DC
180°
120°
90°
RMS Limit
60°
30°
1
5
K
/
W
Conduction Period
16F(R) Series
T = 175°C
J
0
0
5
10
15
20
25
300
25
50
75
100
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
Fig. 4-ForwardPowerLossCharacteristics
325
300
275
250
225
200
175
150
125
350
325
300
275
250
225
200
175
150
125
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Rated V
Applied Following Surge.
RRM
Initial T =175°C
J
Initial T =175°C
J
No Voltage Reapplied
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Rated V
Reapplied
RRM
16F(R) Series
16F(R) Series
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig.5-MaximumNon-RepetitiveSurgeCurrent
Fig.6-MaximumNon-RepetitiveSurgeCurrent
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5
16F(R) Series
Bulletin I20204 rev. B 01/05
10
1000
Steady State Value
= 1.6 K/W
T = 25°C
J
R
thJC
(DC Operation)
T = 175°C
J
100
10
1
1
16F(R) Series
1
16F(R) Series
0.1
0.001
0.01
0.1
10
0
1
2
3
4
5
6
Instantaneous Forward Voltage (V)
Square Wave Pulse Duration (s)
Fig. 7-ForwardVoltageDropCharacteristics
Fig. 8-Thermal ImpedanceZthJC Characteristics
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6
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