150EBU04 [INFINEON]
Ultrafast Soft Recovery Diode; 超快软恢复二极管
| 型号： | 150EBU04 |
| 厂家： | 
Infineon |
| 描述： | Ultrafast Soft Recovery Diode |
| 文件： | 总6页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD-20744 rev. A 01/01
150EBU04
Ultrafast Soft Recovery Diode
Features
trr = 60ns
IF(AV) = 150Amp
VR = 400V
• Ultrafast Recovery
• 175°C Operating Junction Temperature
Benefits
• Reduced RFI and EMI
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description/ Applications
These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited
for HF welding, power converters and other applications where switching losses are not significant portion of the total
losses.
Absolute Maximum Ratings
Parameters
Max
Units
VR
Cathode to Anode Voltage
400
V
IF(AV)
IFSM
IFRM
Continuous Forward Current, TC = 104°C
Single Pulse Forward Current, TC = 25°C
Maximum Repetitive Forward Current
150
1500
300
A
!
TJ, TSTG Operating Junction and Storage Temperatures
- 55 to 175
°C
!"Square Wave, 20kHz
Case Styles
PowIRtab
1
150EBU04
Bulletin PD-20744 rev. A 01/01
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
VBR, Vr
VF
Breakdown Voltage,
Blocking Voltage
Forward Voltage
400
-
-
V
IR = 200µA
-
-
1.07 1.3
0.9 1.1
0.96 1.17
V
V
IF = 150A
IF = 150A, TJ = 175°C
-
-
-
-
-
V
IF = 150A, TJ = 125°C
IR
Reverse Leakage Current
-
-
50
4
-
µA
mA
pF
nH
VR = VR Rated
TJ = 150°C, VR = VR Rated
VR = 400V
C T
L S
Junction Capacitance
Series Inductance
100
3.5
-
Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
trr
Reverse Recovery Time
-
-
-
-
-
-
-
-
60
-
ns
IF = 1.0A, diF/dt = 200A/µs, VR = 30V
IF = 150A
93
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
VR = 200V
172
11
-
diF /dt = 200A/µs
IRRM
Peak Recovery Current
-
A
20
-
Qrr
Reverse Recovery Charge
490
1740
-
nC
-
Thermal - Mechanical Characteristics
Parameters
Min
Typ
Max
Units
RthJC
RthCS
Wt
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
Weight
0.35
K/W
#
0.2
5.02
g
0.18
(oz)
T
Mounting Torque
1.2
10
2.4
20
N * m
lbf.in
#"Mounting Surface, Flat, Smooth and Greased
2
150EBU04
Bulletin PD-20744 rev. A 01/01
1000
100
10
1000
100
10
T
= 175˚C
125˚C
J
1
25˚C
0.1
0.01
0.001
T
T
T
= 175˚C
= 125˚C
J
J
J
0
100
200
300
400
ReverseVoltage-VR(V)
Fig.2-Typical Values Of Reverse Current
Vs. Reverse Voltage
=
25˚C
10000
1000
100
T
= 25˚C
J
10
10
1
100
ReverseVoltage-VR(V)
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
ForwardVoltageDrop-VFM(V)
Fig.3-Typical Junction Capacitance
Fig.1-Typical Forward Voltage Drop Characteristics
Vs. Reverse Voltage
1
D = 0.50
D = 0.20
P
DM
D = 0.10
0.1
D = 0.05
t
1
t
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
2
Notes:
1. Duty factor D = t1/ t 2
2. Peak Tj = Pdm x ZthJC + Tc
.01
0.00001
0.0001
0.001
t1,RectangularPulseDuration(Seconds)
Fig.4-Max. Thermal Impedance ZthJC Characteristics
0.01
0.1
1
3
150EBU04
Bulletin PD-20744 rev. A 01/01
300
250
200
150
100
50
80
60
40
20
RMS Limit
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
00
Square wave (D = 0.50)
Rated Vr applied
80
60
see note (3)
40
0
0
50
100
150
200
250
0
50
100
150
200
250
AverageForwardCurrent-IF(AV)(A)
AverageForwardCurrent-IF(AV)(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Fig.6-Forward Power Loss Characteristics
5000
250
200
150
100
50
Vr = 200V
Tj = 125˚C
IF = 150A
IF = 75A
4500
4000
3500
3000
2500
2000
1500
1000
500
Vr = 200V
Tj = 125˚C
Tj = 25˚C
Tj
= 25˚C
IF = 150A
IF = 75A
0
100
1000
100
1000
di F /dt (A/µs)
diF/dt (A/µs)
Fig.7-TypicalReverseRecovery timevs.di F /dt
Fig.8-TypicalStoredCharge vs.diF /dt
(3) Formulaused:TC =TJ -(Pd+PdREV)xRthJC
;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV =InversePowerLoss=VR1 xIR (1-D); IR @VR1=ratedVR
4
150EBU04
Bulletin PD-20744 rev. A 01/01
Reverse Recovery Circuit
V
= 200V
R
0.01
Ω
L = 70µH
D.U.T.
D
di /dt
dif/dt
F
ADJUST
IRFP250
G
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
t
rr
I
F
t
t
a
b
0
4
Q
rr
2
I
0.5
di(rec)M/dt
I
RRM
RRM
5
0.75 I
RRM
1
di /dt
di F/dt
1. di /dt - Rate of change of current through zero
F
4. Qrr - Area under curve defined by t
rr
crossing
and I
RRM
t
x I
RRM
rr
Q
=
2. I
- Peak reverse recovery current
RRM
rr
2
3. t - Reverse recovery time measured from zero
5. di
/ dt - Peak rate of change of
(rec) M
current during t portion of t
rr
rr
crossing point of negative going I to point where
F
b
a line passing through 0.75 I
extrapolated to zero current
and 0.50 I
RRM
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
5
150EBU04
Bulletin PD-20744 rev. A 01/01
Outline Table
Dimensions in millimeters and (inches)
Ordering Information Table
Device Code
150
E
B
U
04
2
4
5
1
3
1
2
3
4
5
-
-
-
-
-
Current Rating
Single Diode
PowIRtab
Ultrafast Recovery
Voltage Rating
(150 = 150A)
(Ultrafast/ Hyperfast only)
(04 = 400V)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 01/01
6
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