150CNQ040PBF [INFINEON]

Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 40V V(RRM), Silicon, TO-249AA;
150CNQ040PBF
型号: 150CNQ040PBF
厂家: Infineon    Infineon
描述:

Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 40V V(RRM), Silicon, TO-249AA

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PD - 2.535 11/97  
150CNQ... SERIES  
SCHOTTKY RECTIFIER  
150 Amp  
Major Ratings and Characteristics  
Description/Features  
The 150CNQ... non-isolated, center tap Schottky rectifier  
moduleserieshasbeenoptimizedforverylowforwardvoltage  
drop,withmoderateleakage.Theproprietarybarriertechnology  
allowsforreliableoperationupto150°Cjunctiontemperature.  
Typical applications are in switching power supplies, convert-  
ers,free-wheeling diodes, and reverse battery protection.  
Characteristics  
150CNQ... Units  
I
Rectangular  
waveform  
150  
A
F(AV)  
V
I
range  
35 to 45  
6600  
V
A
V
150° C T operation  
J
Centertapmodule  
RRM  
@ tp=5µssine  
Multiple leads per terminal for high frequency, high current  
PCboardmounting  
FSM  
V
@75Apk,T =125°C  
J
(perleg)  
0.60  
High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
F
Very low forward voltage drop  
Highfrequencyoperation  
T
range  
-55to150  
°C  
J
Guard ring for enhanced ruggedness and long term  
reliability  
Low profile, high current package  
CASESTYLEANDDIMENSIONS  
*
PRE-SOLDER CHIP DIMENSIONS  
OutlineD-60(ModifiedJEDECTO-249AA)  
Dimensions in millimeters and inches  
1
150CNQ... Series  
PD - 2.535 11/97  
Voltage Ratings  
Part number  
150CNQ035  
150CNQ040  
150CNQ045  
VR Max. DC Reverse Voltage (V)  
35  
40  
45  
VRWM Max. Working Peak Reverse Voltage (V)  
Absolute Maximum Ratings  
Parameters  
150CNQ Units  
Conditions  
IF(AV) Max.AverageForwardCurrent  
*SeeFig.5  
150  
A
50%dutycycle@TC=93°C,rectangularwaveform  
Followinganyrated  
load condition and with  
ratedVRRMapplied  
IFSM Max.PeakOneCycleNon-Repetitive  
6600  
800  
101  
5µs Sineor3µsRect.pulse  
A
SurgeCurrent (Per Leg) *SeeFig.7  
10msSineor6msRect.pulse  
EAS Non-RepetitiveAvalancheEnergy  
(PerLeg)  
mJ TJ = 25°C, IAS =15Amps,L=0.9mH  
IAR  
RepetitiveAvalancheCurrent  
(PerLeg)  
15  
A
Currentdecayinglinearlytozeroin1µsec  
FrequencylimitedbyTJmax.VA =1.5xVR typical  
Electrical Specifications  
Parameters  
150CNQ Units  
Conditions  
VFM Max. ForwardVoltageDrop  
(Per Leg) * See Fig. 1  
0.64  
0.87  
0.60  
V
V
V
@
75A  
@ 150A  
75A  
@ 150A  
TJ = 25 °C  
TJ = 125 °C  
VR = rated VR  
(1)  
@
0.79  
5
V
IRM  
Max.ReverseLeakageCurrent  
(Per Leg) * See Fig. 2 (1)  
mA TJ = 25 °C  
mA TJ = 125 °C  
200  
CT  
LS  
Max. Junction Capacitance (PerLeg)  
Typical Series Inductance (PerLeg)  
2600  
9.2  
pF VR = 5VDC, (test signal range 100Khz to 1Mhz) 25°C  
nH Measured lead to lead 5mm from package body  
dv/dt Max. Voltage Rate of Change  
(RatedVR)  
10,000  
V/ µs  
(1) Pulse Width < 300µs, Duty Cycle <2%  
Thermal-Mechanical Specifications  
Parameters  
150CNQ Units  
Conditions  
TJ  
Max.JunctionTemperatureRange  
-55to150  
-55to150  
0.70  
°C  
Tstg Max.StorageTemperatureRange  
°C  
RthJC Max.ThermalResistanceJunction  
toCase (Per Leg)  
°C/W DCoperation  
*SeeFig.4  
RthJC Max.ThermalResistanceJunction  
toCase(PerPackage)  
0.35  
0.10  
°C/W DCoperation  
RthCS TypicalThermalResistance,Case  
toHeatsink  
°C/W Mountingsurface,smoothandgreased  
g(oz.)  
wt  
T
ApproximateWeight  
MountingTorque  
56(2.0)  
40(35)  
58(50)  
Min.  
Kg-cm  
(Ibf-in)  
Max.  
CaseStyle  
D-60(TO-249AA) ModifiedJEDEC  
2
150CNQ... Series  
PD - 2.535 11/97  
1000  
100  
10  
1000  
100  
10  
T = 150°C  
J
125°C  
100°C  
75°C  
50°C  
25°C  
1
0.1  
0.01  
0
5
10 15 20 25 30 35 40 45  
Re ve rse Vo lta g e - V (V)  
R
Fig.2-Typical Values Of Reverse Current  
Vs. Reverse Voltage (PerLeg)  
10000  
1000  
100  
T = 150°C  
J
T = 125°C  
J
T = 25°C  
J
T = 25°C  
J
1
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
(V)  
1.4  
1.6  
0
10  
20  
30  
40  
50  
Re ve rse Vo lta g e - V (V)  
Fo rw a rd Vo lta g e Drop - V  
R
FM  
Fig.1-Max. Forward Voltage Drop Characteristics  
(PerLeg)  
Fig.3-Typical Junction Capacitance  
Vs. Reverse Voltage (PerLeg)  
1
D = 0.50  
D = 0.33  
D = 0.25  
D = 0.17  
D = 0.08  
0.1  
0.01  
P
DM  
t
1
t
2
No te s:  
Sing le Pulse  
(The rm a l Re sista nc e )  
1. Duty fa c to r D = t / t  
2
1
2. Pe a k T = PDM x Z  
+ T  
C
J
thJC  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t
, Re c ta ng ula r Pulse Dura tio n (Se c ond s)  
1
Fig.4-Max. Thermal Impedance ZthJC Characteristics (PerLeg)  
3
150CNQ... Series  
PD - 2.535 11/97  
160  
150  
140  
130  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
D = 0.08  
D = 0.17  
D = 0.25  
D = 0.33  
D = 0.50  
R
(DC) = 0.70°C/ W  
thJC  
DC  
RMS Lim it  
DC  
80  
0
25  
50  
75  
100  
125  
(A)  
0
20  
40  
60  
80  
100  
120  
(A)  
Ave ra g e Fo rwa rd Curre nt - I  
Ave ra g e Fo rw a rd C urre nt - I  
F(AV)  
F(AV)  
Fig.5-Max. AllowableCaseTemperature  
Vs.AverageForwardCurrent(PerLeg)  
Fig.6-Forward Power Loss Characteristics  
(PerLeg)  
10000  
1000  
At An y Ra te d Lo a d Co n d itio n  
An d With Ra te d V Ap p lie d  
RRM  
Fo llo wing Surg e  
100  
10  
100  
1000  
10000  
Sq ua re Wa ve Pulse Dura tion - t (mic rose c )  
p
Fig.7-Max. Non-RepetitiveSurgeCurrent(PerLeg)  
L
HIG H-SPEED  
SWITC H  
IRFP460  
DUT  
FREE-WHEEL  
DIODE  
Rg = 25 ohm  
Vd = 25 Volt  
+
C URRENT  
MO NITOR  
40HFL40S02  
Fig.8-Unclamped Inductive Test Circuit  
4

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