120LQ100PBF [INFINEON]
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| 型号： | 120LQ100PBF |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 整流二极管 功效 |
| 文件： | 总4页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94396
SCHOTTKYRECTIFIER
HIGH EFFICIENCY SERIES
120LQ100
120 A, 100V
Major Ratings and Characteristics
Description/Features
The 120LQ100 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic surface mount
SMD-1 ceramic package. The device's forward voltage drop
and reverse leakage current are optimized for the lowest
power loss and the highest circuit efficiency for typical high
frequency switching power supplies and resonent power
converters. Full MIL-PRF-19500 quality conformance
testing is available on source control drawings to TX, TXV
and S quality levels.
Characteristics
120LQ100 Units
IF(AV)
120
A
VRRM
100
1000
0.74
V
A
V
IFSM @ tp = 8.3ms half-sine
V
F
@ 120Apk, TJ =125°C
• Hermetically Sealed
• Low Forward Voltage Drop
• High Frequency Operation
• Guard Ring for Enhanced Ruggedness and Long term
Reliability
TJ,TstgOperating and storage -55 to 150
°C
• Surface Mount
• Lightweight
CASE STYLE
CATHODEANODEANODE
Case Outline and Dimensions - SMD-1
www.irf.com
1
03/15/02
120LQ100
Voltage Ratings
Part number
Max. DC Reverse Voltage (V)
120LQ100
100
VR
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
Limits Units
Conditions
IF(AV) Max. AverageForwardCurrent
120
A
50% duty cycle @ TC = 58°C, square waveform
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive
Surge Current
1000
A
@ tp = 8.3 ms half-sine
Electrical Specifications
Parameters
Limits Units
Conditions
VFM
Max. ForwardVoltageDrop
0.64
0.74
0.92
0.62
0.75
0.94
0.53
0.62
0.74
60
V
@ 30A
See Fig. 1
V
@ 60A
TJ = -55°C
TJ = 25°C
TJ = 125°C
VR = rated VR
V
@ 120A
@ 30A
V
V
@ 60A
V
@ 120A
@ 30A
V
V
@ 60A
V
@ 120A
TJ = 25°C
TJ = 100°C
TJ = 125°C
IRM
Max. Reverse Leakage Current
µA
mA
mA
See Fig. 2
15
60
CT
LS
Max. Junction Capacitance
Typical Series Inductance
2616
5.9
pF
nH
VR = 5VDC ( 1MHz, 25°C )
Measured from center of cathode pad to center of
anode pad
Thermal-MechanicalSpecifications
Parameters
Limits Units
Conditions
TJ
Max.JunctionTemperatureRange
-55 to 150
-55 to 150
0.8
°C
Tstg
Max.StorageTemperatureRange
°C
RthJC Max. Thermal Resistance, Junction
to Case
°C/W
DCoperation
See Fig. 4
wt
Weight(Typical)
Die Size
2.6
g
275X275
mils
Case Style
SMD-1
Pulse Width < 300µs, Duty Cycle < 2%
Pins 2 and 3 externally tied together
2
www.irf.com
120LQ100
100
10
125°C
100°C
75°C
1
1000
100
10
0.1
25°C
0.01
0.001
0
20
40
60
80
100
Reverse Voltage - V (V)
R
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Tj = 125°C
10000
1000
100
Tj = 25°C
Tj = -55°C
T
= 25°C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Forward Voltage Drop - V (V)
F
Fig. 1 - Max. Forward Voltage Drop Characteristics
0
20
40
60
80
100
Reverse Voltage -V (V)
R
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
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3
120LQ100
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
180
120LQ100
thJC
160
R
= 0.8°C/W
140
120
100
80
DC
60
40
20
0
0
20
40
60
80
100
120
(A)
140
Average Forward Current - I
F(AV)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/02
4
www.irf.com
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