11DQ04 [INFINEON]
SCHOTTKY RECTIFIER; 肖特基整流器器型号: | 11DQ04 |
厂家: | Infineon |
描述: | SCHOTTKY RECTIFIER |
文件: | 总5页 (文件大小:57K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-2.287 rev. B 02/2000
11DQ03
11DQ04
SCHOTTKY RECTIFIER
1.1 Amp
Major Ratings and Characteristics
Description/Features
The11DQ..axialleadedSchottkyrectifierhasbeenoptimized
for very low forward voltage drop, with moderate leakage.
Typicalapplicationsareinswitchingpowersupplies,convert-
ers, free-wheeling diodes, and reverse battery protection.
Characteristics
11DQ..
Units
I
Rectangular
waveform
1.1
A
F(AV)
Low profile, axial leaded outline
V
I
30/40
225
V
A
V
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
RRM
@tp=5µssine
Very low forward voltage drop
Highfrequencyoperation
FSM
V
@1Apk,T =25°C
J
0.55
Guard ring for enhanced ruggedness and long term
reliability
F
J
T
range
-40 to150
°C
CASE STYLE AND DIMENSIONS
ConformtoJEDECOutlineDO-204AL(DO-41)
Dimensions in millimeters and inches
1
11DQ03, 11DQ04
PD-2.287 rev. B 02/2000
Voltage Ratings
Part number
11DQ03
11DQ04
VR
Max.DC Reverse Voltage (V)
30
40
VRWM Max.Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
IF(AV) Max.AverageForwardCurrent
*SeeFig.4
11DQ.. Units
Conditions
50%dutycycle@TA=75°C,rectangularwaveform
1.1
A
Followinganyrated
load condition and with
ratedVRRMapplied
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent *SeeFig.6
225
35
5µs Sineor3µsRect.pulse
10msSineor6msRect.pulse
A
Electrical Specifications
Parameters
11DQ.. Units
Conditions
VFM Max. ForwardVoltageDrop
0.55
0.71
0.50
V
V
V
@ 1A
@ 2A
@ 1A
TJ = 25 °C
* See Fig. 1
(1)
TJ = 125 °C
@ 2A
0.61
1.0
6.0
60
V
IRM
Max.ReverseLeakageCurrent
* See Fig. 2 (1)
mA TJ = 25 °C
mA TJ = 125 °C
VR = rated VR
CT
LS
Typical Junction Capacitance
Typical Series Inductance
pF VR = 5VDC, (test signal range 100Khz to 1Mhz) 25°C
nH Measured lead to lead 5mm from package body
8.0
(1) Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
11DQ.. Units
Conditions
TJ
Max.JunctionTemperatureRange
-40to150
-40to150
130
°C
°C
Tstg Max.StorageTemperatureRange
RthJA Max.ThermalResistanceJunction
toAmbient
°C/W DCoperation
Withoutcoolingfin
RthJA TypicalThermalResistanceJunction
toAmbientwithPCBoardMounted
81
°C/W PCboardmounted[L=8mm(0.315in.)]
Solderlandarea100mm2(0.155in2.)
wt
ApproximateWeight
CaseStyle
0.33(0.012) g(oz.)
DO-204AL(DO-41)
2
11DQ03, 11DQ04
PD-2.287 rev. B 02/2000
10
100
10
T
= 150˚C
J
1
125˚C
0.1
0.01
0.001
0.0001
25˚C
T
= 150˚C
= 125˚C
J
0
10
20
30
40
T
J
ReverseVoltage-VR(V)
1
T
= 25˚C
J
Fig.2-Typical Values Of Reverse Current
Vs. Reverse Voltage
100
T
= 25˚C
J
0.1
0
0.3
0.6
0.9
1.2
1.5
10
Forward Voltage Drop-VFM (V)
Fig.1-Max. Forward Voltage Drop Characteristics
0
10
20
30
40
50
ReverseVoltage-VR(V)
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage
3
11DQ03, 11DQ04
PD-2.287 rev. B 02/2000
0.8
0.6
0.4
0.2
0
150
120
90
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS Limit
DC
60
Square wave (D = 0.50)
80% Rated V applied
R
30
see note (2)
0
0
0.3
0.6
0.9
1.2
1.5
0
0.3
AverageForwardCurrent-IF(AV)(A)
Fig.5-Forward Power Loss Characteristics
0.6
0.9
1.2
1.5
AverageForwardCurrent-IF(AV)(A)
Fig. 4 - Max. Allowable Case Temperature
Vs. Average Forward Current
1000
At Any Rated Load Condition
And With Rated V
Following Surge
Applied
RRM
100
10
10
100
1000
10000
SquareWavePulseDuration-tp(microsec)
Fig.6-Max. Non-Repetitive Surge Current
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
4
11DQ03, 11DQ04
PD-2.287 rev. B 02/2000
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
EUROPEANHEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
5
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