110RKI80 [INFINEON]
PHASE CONTROL THYRISTORS; 相位控制晶闸管
| 型号： | 110RKI80 |
| 厂家： | 
Infineon |
| 描述： | PHASE CONTROL THYRISTORS |
| 文件： | 总8页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25152 revꢀ E 09/03
110/111RKI SERIES
PHASE CONTROL THYRISTORS
Stud Version
Features
High current and high surge ratings
Hermetic ceramic housing
110A
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
110/111RKI
110
Units
A
IT(AV)
@ TC
90
°C
IT(RMS)
ITSM
172
A
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
2080
2180
21$7
A
A
I2t
KA2s
KA2s
19$8
VDRM/VRRM
400 to 1200
110
V
case style
t
typical
µs
q
TO-209AC (TO-94)
TJ
- 40 to 140
°C
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110/111RKI Series
Bulletin I25152 rev$ E 09/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
VDRM/VRRM, max$ repetitive
VRSM , maximum non-
IDRM/IRRM max$
Type number Code
peak and off-state voltage
V
repetitive peak voltage
V
@ TJ = TJ maxꢀ
mA
40
400
500
110/111RKI
80
800
900
20
120
1200
1300
On-state Conduction
Parameter
110/111RKI
Units Conditions
IT(AV) Maxꢀ average on-state current
@ Case temperature
110
90
A
180° conduction, half sine wave
°C
IT(RMS) Maxꢀ RMS on-state current
172
2080
2180
1750
1830
21ꢀ7
19ꢀ8
15ꢀ3
14ꢀ0
217
DC @ 83°C case temperature
t = 10ms No voltage
t = 8ꢀ3ms reapplied
ITSM
Maxꢀ peak, one-cycle
non-repetitive surge current
A
t = 10ms 100% VRRM
t = 8ꢀ3ms reapplied
t = 10ms No voltage
t = 8ꢀ3ms reapplied
t = 10ms 100% VRRM
t = 8ꢀ3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ maxꢀ
I2t
Maximum I2t for fusing
KA2s
I2√t
Maximum I2√t for fusing
KA2√s t = 0ꢀ1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
0ꢀ82
1ꢀ02
(16ꢀ7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ maxꢀ
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ maxꢀ
voltage
rt1
Low level value of on-state
slope resistance
2ꢀ16
1ꢀ70
(16ꢀ7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ maxꢀ
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ maxꢀ
VTM
IH
Maxꢀ on-state voltage
Maximum holding current
Typical latching current
1ꢀ57
200
400
V
I = 350A, TJ = TJ maxꢀ, t = 10ms sine pulse
pk p
mA
TJ = 25°C, anode supply 6V resistive load
IL
Switching
Parameter
110/111RKI
Units Conditions
di/dt
Maxꢀ non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
300
A/µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
Typical turn-off time
1
d
V
= 0ꢀ67% VDRM, TJ = 25°C
d
µs
ITM = 50A, TJ = TJ maxꢀ, di/dt = -5A/µs, VR = 50V
t
110
q
dv/dt = 20V/µs, Gate 0V 25Ω
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110/111RKI Series
Bulletin I25152 rev$ E 09/03
Blocking
Parameter
110/111RKI
Units Conditions
V/µs TJ = TJ maxꢀ linear to 80% rated VDRM
dv/dt Maximum critical rate of rise of
off-state voltage
500
IRRM
IDRM
Maxꢀ peak reverse and off-state
leakage current
20
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Maxꢀ peak positive gate current
110/111RKI
Units Conditions
PGM
12
3ꢀ0
3ꢀ0
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
10
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
TYPꢀ
MAXꢀ
IGT
DC gate current required
to trigger
TJ = - 40°C
180
80
-
120
-
mA
V
TJ
J = 140°C
TJ = - 40°C
TJ 25°C
J = 140°C
=
25°C
Maxꢀ required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
40
T
VGT
DC gate voltage required
to trigger
2ꢀ5
1ꢀ6
1
-
2
-
=
T
Maxꢀ gate current/ voltage not to
trigger is the maxꢀ value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
6ꢀ0
mA
V
TJ = TJ max
VGD
0ꢀ25
Thermal and Mechanical Specification
Parameter
110/111RKI
-40 to 140
Units Conditions
TJ
T
Maxꢀoperatingtemperaturerange
Maxꢀstoragetemperaturerange
°C
-40 to 150
stg
RthJC Maxꢀthermalresistance,
0ꢀ27
DCoperation
K/W
junction to case
RthCS Maxꢀthermalresistance,
0ꢀ1
Mounting surface, smooth, flat and greased
Non lubricated threads
case to heatsink
T
Mountingtorque,±10%
15ꢀ5
(137)
14
Nm
(lbf-in)
Lubricated threads
SeeOutlineTable
(120)
130
wt
Approximateweight
Casestyle
g
TO-209AC(TO-94)
3
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110/111RKI Series
Bulletin I25152 rev$ E 09/03
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
180°
120°
90°
0ꢀ043
0ꢀ052
0ꢀ066
0ꢀ096
0ꢀ167
0ꢀ031
0ꢀ053
0ꢀ071
0ꢀ101
0ꢀ169
K/W
TJ = TJ maxꢀ
60°
30°
Ordering Information Table
Device Code
11
1
RKI 120
4
1
2
3
1
2
-
-
IT(AV) rated average output current (rounded/10)
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
Thyristor
3
4
-
-
Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
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110/111RKI Series
Bulletin I25152 rev$ E 09/03
Outline Table
CERAMIC HOUSING
16.5 (0.65) MAX.
8.5 (0.33) DIA.
2.6 (0.10) MAX.
4.3 (0.17) DIA.
FLEXIBLE LEAD
2
C.S. 16mm
(.025 s.i.)
2
C.S. 0.4 mm
(.0006 s.i.)
RED SILICON RUBBER
RED CATHODE
WHITE GATE
Fast-on Terminals
AMP. 280000-1
REF-250
215 (8.46)
10 (0.39)
RED SHRINK
WHITE SHRINK
22.5 (0.88) MAX. DIA.
SW 27
1/2"-20UNF-2A
29.5 (1.16) MAX.
CaseStyleTO-209AC(TO-94)
All dimensions in millimeters (inches)
* FOR METRIC DEVICE: M12 X 1ꢀ75
CONTACT FACTORY
140
130
120
110
100
90
140
130
120
110
100
90
110/111RKISeries
110/111RKISeries
R
(DC) = 0.27 K/ W
R
(DC) = 0.27 K/ W
thJC
thJC
Co nd uc tio n Pe rio d
C o nd uc tio n Ang le
30°
60°
90°
90°
60°
120°
80
120°
30°
40
180°
DC
180°
80
70
0
20
60
80
100 120
0
20 40 60 80 100 120 140 160 180
Ave ra g e On-sta te Curre nt (A)
Ave ra g e On-sta te Curre nt (A)
Figꢀ 1 - Current Ratings Characteristics
Figꢀ 2 - Current Ratings Characteristics
5
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110/111RKI Series
Bulletin I25152 rev$ E 09/03
160
180°
t
h
S
A
120°
90°
60°
30°
140
120
100
80
RMS Lim it
1
.
5
K
/
W
W
2
C o nd uc tio n Ang le
K
/
60
40
4
K
/
W
W
110/111RKISeries
T = 140°C
20
J
5
K
/
0
0
20
40
60
80
100
1
20 20
40
60
80 100 120 140
Ave ra g e On-sta te Curre nt (A)
Ma xim um Allowa b le Am b ie nt Te m p e ra ture (°C)
Figꢀ 3 - On-state Power Loss Characteristics
220
200
180
160
140
120
100
80
DC
180°
120°
90°
60°
30°
0
.
8
K
/
W
RMS Lim it
Co nd uc tio n Pe rio d
2
K
/
W
60
110/111RKISeries
40
4
5
K
/
W
W
T
= 140°C
J
20
K
/
0
0
20 40 60 80 100 120 140 160 1
Ave ra g e On-sta te C urre nt (A)
80 20
40
60
80 100 120 140
Ma xim um Allo wa b le Am b ie nt Te m p e ra ture (°C)
Figꢀ 4 - On-state Power Loss Characteristics
2000
1800
1600
1400
1200
1000
800
2500
2000
1500
1000
500
At Any Ra te d Loa d C ond ition And With
Ra te d V Ap p lie d Following Surg e .
Ma xim um Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion. Control
Of C ond uc tion Ma y No t Be Ma inta ine d .
RRM
Initia l T = 140°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initia l T = 140°C
J
No Volta g e Re a pp lie d
Ra te d V
Re a p p lie d
RRM
110/111RKISeries
110/111RKISeries
1
10
100
0.01
0.1
1
10
Num b e r O f Eq ua l Am p litud e Ha lf Cyc le C urre nt Pulse s (N)
Pulse Tra in Dura tion (s)
Figꢀ 6 - Maximum Non-Repetitive Surge Current
Figꢀ 5 - Maximum Non-Repetitive Surge Current
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110/111RKI Series
Bulletin I25152 rev$ E 09/03
10000
1000
100
10
T = 25°C
J
T = 140°C
J
110/111RKISeries
1
0
1
2
3
4
5
Insta nta ne ous O n-sta te Volta g e (V)
Figꢀ 7 - On-state Voltage Drop Characteristics
1
Ste a d y Sta te Va lue
= 0.27 K/ W
R
thJC
(DC Op e ra tion)
0.1
0.01
0.001
110/111RKISeries
0.0001
0.001
0.01
0.1
1
10
Sq ua re Wa ve Pulse Dura tion (s)
Figꢀ 8 - Thermal Impedance ZthJC Characteristic
100
10
1
Re c ta ng ula r g a te p ulse
(1) PGM = 12W, tp = 5m s
(2) PGM = 30W, tp = 2m s
(3) PGM = 60W, tp = 1m s
(4) PGM = 200W, tp = 300µs
a ) Re c om m e nd e d loa d line for
ra te d d i/ d t: 20V, 30o hm s;
tr<=0.5 µs, tp =>6µs
b ) Re c om m e nd e d lo a d lin e fo r
<=30% ra te d d i/ d t: 15V, 40ohm s
(a )
tr<=1 µs, tp =>6µs
(b )
(2) (3)
(1)
(4)
VGD
IGD
0.01
Device:110/111RKISeries
Fre q ue nc y Lim ite d b y PG(AV)
10 100 1000
0.1
0.001
0.1
1
Insta nta ne ous Ga te C urre nt (A)
Figꢀ 9 - Gate Characteristics
7
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110/111RKI Series
Bulletin I25152 rev$ E 09/03
Data and specifications subject to change without notice$
This product has been designed and qualified for Industrial Level$
Qualification Standards can be found on IR's Web site$
IR WORLD HEADQUARTERS: 233 Kansas St$, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www$irf$com for sales contact information$ 03 /03
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