10ETS [INFINEON]

INPUT RECTIFIER DIODE; 输入整流二极管


型号：	10ETS
厂家：	Infineon
描述：	INPUT RECTIFIER DIODE 输入整流二极管整流二极管输入元件
文件：	总5页 (文件大小：73K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Bulletin I2120 rev. A 07/97

SAFEIR Series

10ETS..

INPUT RECTIFIER DIODE

V_F< 1.1V@10A

I_FSM= 200A

Description/Features

The 10ETS.. rectifierSAFEIRseries has been

optimized for very low forward voltage drop,

V_RRM800to1600V

with moderate leakage. The glass passivation

technology used has reliable operation up to

150°C junction temperature.

The High Reverse Voltage range available

allows design of input stage primary

rectification with Outstanding Voltage Surge

capability.

Typical applications are in input rectification

and these products are designed to be used

with International Rectifier Switches and

Output Rectifiers which are available in

identical package outlines.

Output Current in Typical Applications

Applications

Single-phase Bridge Three-phase Bridge Units

CapacitiveinputfilterT_A=55°C,T_J=125°C

commonheatsinkof1°C/W

12.0

16.0

Major Ratings and Characteristics

Package Outline

Characteristics

10ETS.. Units

Sinusoidal waveform

800to1600

200

F(AV)

RRM

FSM

@10A,T =25°C

1.1

TO-220AC

-40to150

°C

Also available in D-pak (8EWS Series)

10ETS.. SAFEIR Series

Bulletin I2120 rev. A 07/97

Voltage Ratings

V_RRM, maximum

peak reverse voltage

V_RSM, maximum non repetitive

I_RRM

150°C

peak reverse voltage

Part Number

10ETS08

10ETS12

10ETS16

800

1200

1600

900

1300

1700

0.5

Provide terminal coating for voltages above 1200V

Absolute Maximum Ratings

Parameters

10ETS..

Units

Conditions

I_F(AV)Max.AverageForwardCurrent

@T_C=105°C,180°conductionhalfsinewave

I_FSMMax.PeakOneCycleNon-Repetitive

SurgeCurrent

170

200

10msSinepulse,ratedV_RRMapplied

10msSinepulse,novoltagereapplied

10ms Sine pulse, rated V_RRMapplied

10ms Sine pulse, no voltage reapplied

t=0.1to10ms,novoltagereapplied

I²t

Max.I²tforfusing

130

A²s

145

I²√t Max.I²√tforfusing

1450

A²√s

Electrical Specifications

Parameters

10ETS..

1.1

Units

Conditions

V_FMMax. Forward Voltage Drop

@ 10A,T_J=25°C

r_t

Forward slope resistance

mΩ

T_J= 150°C

V_F(TO)Threshold voltage

0.82

0.05

0.50

I_RMMax. Reverse Leakage Current

T_J= 25 °C

V_R= rated V_RRM

T_J=150°C

Thermal-Mechanical Specifications

Parameters

10ETS.. Units

Conditions

T_J

Max. Junction Temperature Range

-40to150

2.5

°C

T_stgMax. Storage Temperature Range

R_thJCMax. Thermal Resistance Junction

to Case

°C/W

DC operation

R_thJAMax. Thermal Resistance Junction

toAmbient

°C/W

g(oz.)

R_thCSTypical Thermal Resistance, Case to

Heatsink

0.5

Mounting surface , smooth and greased

Approximate Weight

Mounting Torque

2(0.07)

6(5)

Min.

Kg-cm

(Ibf-in)

Max.

12(10)

Case Style

TO-220AC

10ETS.. SAFEIR Series

Bulletin I2120 rev. A 07/97

150

140

130

120

110

100

150

140

130

120

110

100

10ETS.. Se rie s

(DC ) = 2.5 °C / W

(DC ) = 2.5 °C/ W

thJC

C o nd uc tio n Ang le

Co nd uc tio n Perio d

30°

60°

90°

120°

180°

10 12 14 16 18

Ave ra g e Fo rw a rd C urre nt (A)

Ave ra ge Forwa rd Curre nt (A)

Fig.1-CurrentRatingCharacteristics

Fig.2-CurrentRatingCharacteristics

180°

120°

90°

60°

30°

180°

120°

90°

60°

30°

RMS Lim it

C o nd uc tio n Pe rio d

10ETS.. Se ries

Co nd uctio n Ang le

10ETS.. Se rie s

= 150°C

T = 150°C

10 12 14 16

Ave ra g e Fo rwa rd C urre nt (A)

Fig.3-ForwardPowerLossCharacteristics

Ave ra g e Fo rw a rd Curren t (A)

Fig.4-ForwardPowerLossCharacteristics

240

220

200

180

160

140

120

100

200

Ma ximum No n Re p e titive Surg e C urre nt

Ve rsus Pu lse Tra in Dura tion .

At Any Ra te d Lo a d Co ndition And With

Ra te d V Ap p lie d Fo llo wing Surg e .

RRM

180

160

140

120

100

In itia l T = 150°C

Initia l T = 150 °C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

No Vo lta g e Re a p p lie d

Ra te d V

Re a p p lie d

RRM

10ETS.. Se rie s

0.01

0.1

100

Num b e r Of Eq ua l Am plitude Ha lf Cyc le Curre nt Pulse s (N)

Pulse Tra in Du ra tio n (s)

Fig.6-MaximumNon-RepetitiveSurgeCurrent

Fig.5-MaximumNon-RepetitiveSurgeCurrent

10ETS.. SAFEIR Series

Bulletin I2120 rev. A 07/97

100

T = 25°C

T = 150°C

10ETS.. Se rie s

0.5

In sta n ta n e o us Fo rwa rd Vo lta g e (V)

Fig.8-ForwardVoltageDropCharacteristics

1.5

2.5

D = 0.50

Ste a d y Sta te Va lue

(DC O p e ra tio n)

D = 0.33

D = 0.25

D = 0.17

D = 0.08

Sing le Pulse

10ETS.. Se rie s

0.1

0.0001

0.001

0.01

0.1

Sq ua re Wa ve Pulse Dura tion (s)

Fig.9-ThermalImpedanceZ_thJCCharacteristics

10ETS.. SAFEIR Series

Bulletin I2120 rev. A 07/97

Ordering Information Table

Device Code

BASE

CATHODE

CurrentRating

CircuitConfiguration:

E = Single Diode

Package:

ANODE

CATHODE

T=TO-220AC

Type of Silicon:

08 = 800V

12 = 1200V

16 = 1600V

S = Standard Recovery Rectifier

Voltage code: Code x 100 = V_RRM

Outline Table

10.54 (0.41)

MAX.

1.32 (0.05)

3.78 (0.15)

1.22 (0.05)

DIA.

3.54 (0.14)

6.48 (0.25)

6.23 (0.24)

2.92 (0.11)

2.54 (0.10)

15.24 (0.60)

14.84 (0.58)

TERM 2

2°

14.09 (0.55)

13.47 (0.53)

3.96 (0.16)

3.55 (0.14)

0.10 (0.004)

2.04 (0.080) MAX.

1.40 (0.05)

1.15 (0.04)

2.89 (0.11)

2.84 (0.10)

0.94 (0.04)

0.69 (0.03)

0.61 (0.02) MAX.

4.57 (0.18)

4.32 (0.17)

5.08 (0.20) REF.

Dimensionsinmillimetersandinches

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