10DF6TR [INFINEON]
Rectifier Diode, 1 Element, 1A, Silicon, DO-204AL;型号: | 10DF6TR |
厂家: | Infineon |
描述: | Rectifier Diode, 1 Element, 1A, Silicon, DO-204AL 二极管 |
文件: | 总4页 (文件大小:51K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-20553 03/98
10DF. SERIES
ULTRAFAST SWITCHING RECTIFIER
DO-204AL(DO-41)
Major Ratings and Characteristics
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound
Characteristics
10DF.
Units
I
1
A
F(AV)
Void-free Plastic in DO-41 package
V
range
100 to 800
34
V
A
RRM
1.0 ampere operation @ TA = 55°C
with no thermal runaway
I
FSM
V
@1A,T =25°C
J
1.2
V
Exceeds environmental standards of
MIL-STD-19500/228
F
trr
@T =25°C
J
100
ns
°C
Ultra Fast switching for high efficiency
T
range
-65to150
J
tlineDO-204AL(DO-41)
imeters and (inches)
1
10DF. Series
PD-20553 03/98
Voltage Ratings
VRRM , maximum
peak reverse voltage
V
VDC, maximum
blocking voltage
V
IRRM
100°C
µA
Part Number
10DF1
10DF2
10DF4
10DF6
10DF8
100
200
400
600
800
100
200
400
600
800
500
Maximum Ratings and Electrical Characteristics
Parameters
10DF.
Units Conditions
IF(AV) Maximum Average Forward Current
1
A
@ TA =55°C,3/8" lead length,60Hz
resistive or inductive load
IFSM Peak Forward Surge Current
34
A
8.3mssinglehalfsinewavesuperimposed
on rated load(JEDECMethod)
@ 1A
VFM Max.Instantaneous ForwardVoltage
IRM Maximum DC Reverse Current
at Rated DC Blocking Voltage
1.2
V
10
µA
TJ=25°C
500
TJ=100°C
trr
Reverse Recovery Time
100
ns
pf
IF = 0.5A, IR = 1.0A, Irr = 0.25A
@1MHzappliedreversevoltageof4.0VDC
CJ Typical Junction Capacitance
RthJA Max. Junction Thermal Resistance
TJ Operating Temperature Range
Tstg Storage Temperature Range
wt Approximate Weight
170
115
°C/W leadlength0.375"(9.5mm)P.C.B.mounted
-65to150
-65to150
0.3(0.013)
DO-204AL(DO-41)
°C
°C
g(oz)
Case Style
JEDEC molded plastic
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
2
10DF. Series
PD-20553 03/98
trr
S
S
50
10
+0.5A
NON
NON
INDUCTIVE
INDUCTIVE
0
D.U.T.
(-)
-0.25 A
(+)
(-)
PULSE
GENERATOR
NOTE 2
25V dc
(approx)
S
1
OSCILLOSCOPE
NOTE 1
NON
INDUCTIVE
(+)
-1 A
1cm
SET TIME
BASE FOR
10nsec/cm
Fig.1-ReverseRecoveryTimeCharacteristicandTestCircuitDiagram
10
150
Sing le Pha se Ha lf Wa ve 60HZ
Re sistive o r In d uc tive Loa d
.375" Le a d Le ng ths
140
130
120
110
100
90
T = 25°C
J
1
80
70
60
0.1
50
0.6 0.7 0.8 0.9
1
1.1 1.2 1.3
0
0.2
0.4
0.6
0.8
1
1.2
Ma ximum Fo rwa rd Vo lta g e - (V)
Ave ra g e Fo rwa rd Curre nt - (A)
Fig.2-ForwardCharacteristic
Fig.6-ForwardCurrentDeratingCurve
100
10
1
30
25
20
15
10
5
T = 25°C
J
0
0.1
0
20
40
Re ve rse Volta g e - (V)
Fig.3-TypicalJunctionCapacitance
60
80
100
1
10
100
1000
Numb e r of C ic le s a t 60Hz
Fig.4-ForwardSurgeCharacteristic
3
10DF. Series
PD-20553 03/98
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
EUROPEANHEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
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IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
4
相关型号:
10DF8
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
INFINEON
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