IM811C-73-ES-125.0000MHZ [ILSI]
125MHz Nom,;型号: | IM811C-73-ES-125.0000MHZ |
厂家: | ILSI |
描述: | 125MHz Nom, |
文件: | 总7页 (文件大小:534K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MEMS Oscillator, Ultra Performance, High Freq., LVCMOS/ HCMOS Compatible, 80.0 MHz to 220.0MHz
IM811 Series
Features:
Typical Applications:
MEMS Technology
Fibre Channel
Server and Storage
GPON, EPON
100M / 1G /10G Ethernet
Direct pin to pin drop-in replacement for industry-standard packages
Ultra-low phase jitter: 0.5 pSec (12 kHz to 20 MHz)
LVCMOS/HCMOS Compatible Output
Industry-standard package 2.5 x 2.0, 3.2 x 2.5, and 5.0 x 3.2 mm x mm
Pb-free, RoHS and REACH compliant
Fast delivery times
Electrical Specifications:
Frequency Range
80.000 MHz to 220.000MHz
See Part Number Guide
Frequency Stability
Inclusive of Initial Tolerance, Operating Temperature Range, Load, and
Voltage
Operating Temperature
Supply Voltage (Vdd) ±10%
Current Consumption
See Part Number Guide
See Part Number Guide
34 mA typ./ 36 mA max
30 mA typ./ 33 mA max
No load condition, f = 100 MHz, Vdd = +2.5 V, +2.8 V or +3.3 V
No load condition, f = 100 MHz, Vdd = +1.8V
OE Disable Current
Standby Current
31 mA max
30 mA max
Vdd = +2.5 V, +2.8 V or +3.3 V, OE = GND
Vdd = +1.8 V, OE = GND
ꢀꢀꢀ
70 µA max
10 µA max
Vdd = +2.5 V, +2.8 V or +3.3 V, ST = GND
ꢀꢀꢀ
Vdd = +1.8 V, ST = GND
Waveform Output
Symmetry
LVCMOS/HCMOS
45%/55%
40%/60%
F = less than 165 MHz all Vdds
F = greater than 165 MHz all Vdds
Rise / Fall Time
Logic “1”
1.2 nSec typ./ 2.0 nSec max
90% of Vdd min
15 pF Load, 10% to 90% of Vdd
Logic “0”
10% of Vdd max
ꢀꢀꢀ
Input Voltage High
Input Voltage Low
Input Pull-up Impedance
70% of Vdd min
Pin 1, OE or ST
ꢀꢀꢀ
30% of Vdd max
Pin 1, OE or ST
ꢀꢀꢀ
100 kΩ typ./ 250 kΩ max
2.0 MΩ min
Pin 1, OE logic high or logic low, or ST logic high
Pin 1, ST logic low
ꢀꢀꢀ
Startup Time
7 mSec typ./ 10 mSec max
115 nSec max
Measured from the time Vdd reaches its rated minimum values
F= 80 MHz, For other frequencies, T_oe = 100 nSec = 3 cycles
OE Enable/Disable Time
Resume Time
ꢀꢀꢀ
10 mSec max
In standby mode, measured from the time ST pin crosses 50% threshold.
RMS Period Jitter
1.5 pSec typ./ 2.0 pSec max
2.0 pSec typ./ 3.0 pSec max
F = 156.25 MHz, Vdd = +2.5 V,+2.8 V or +3.3 V
F = 156.25 MHz, Vdd = +1.8 V
RMS Phase Jitter (random)
First year Aging
10-years Aging
Notes:
0.5 pSec typ./ 1.0 pSec max
±1.5 ppm
F = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz
At +25ºC ±2ºC
At +25ºC ±2ºC
±5.0 ppm
All min and max limits are specified over temperature and rated operating voltage with 15pF output unless otherwise stated.
Typical values are at +25ºC and nominal supply voltage.
Absolute Maximum Limits
Storage Temperature
Supply Voltage (Vdd)
Electrostatic Discharge
-65ºC to +150ºC
-0.5 VDC to 4.0 VDC
2000 V max
Solder Temperature (follow standard Pb free soldering guidelines)
Junction Temperature
260ºC max
150ºC max
Rev: 01/30/16_A
Page 1 of 7
ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: e-mail@ilsiamerica.com ●
www.ilsiamerica.com
Specifications subject to change without notice
MEMS Oscillator, Ultra Performance, High Freq., LVCMOS/ HCMOS Compatible, 80.0 MHz to 220.0MHz
IM811 Series
Ordering Information:
Part Number Guide
Operating
Temperature
Output Drive
Strength
Stability
(ppm)
Packages
Input Voltage
Select Function
Frequency
IM811B – 5.0 x 3.2
IM811C – 3.2 x 2.5
IM811D – 2.5 x 2.0
1 = +1.8 V
6 = +2.5 V
2 = +2.7 V
7 = +3.0 V
3 = +3.3 V
1 = 0ºC to +70ºC
2 = -40ºC to +85ºC
3 = -20ºC to +70ºC
- = Default
E = ±10
F = ±20
A = ±25
B = ±50
H = Tri-state
S = Standby
-
Frequency
Sample Part Number: IM811C-31-FS-100.0000MHz
This 100.0000 MHz oscillator in a 3.2 x 2.5 package with stability ±20 ppm from 0ºC to +70ºC using a supply voltage of +3.3 V. With Pin 1 function as
Standby. Output Drive Strength is only set to the default level.
Sample Part Number: IM811D-13-AH-125.0000MHz
This 125.0000 MHz oscillator in a 2.5 x 2.0 package with stability ±25 ppm from -20ºC to +70ºC using a supply voltage of +1.8 V. With Pin 1 function as
Tri-state. Output Drive Strength is only set to the default level.
Notes:
Not all options are available at all frequencies and temperatures ranges.
Please consult with sales department for any other parameters or options.
Oscillator specification subject to change without notice.
Phase Noise:
Figure 1: Phase Noise, 156.25 MHz, +3.3 V LVCMOS Output
Rev: 01/30/16_A
Page 2 of 7
ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: e-mail@ilsiamerica.com ●
www.ilsiamerica.com
Specifications subject to change without notice
MEMS Oscillator, Ultra Performance, High Freq., LVCMOS/ HCMOS Compatible, 80.0 MHz to 220.0MHz
IM811 Series
Performance Plots
Figure 2: Idd vs Frequency
Figure 3: RMS Period vs Frequency
Figure 4: Duty Cycle vs Frequency
Figure 5: RMS Phase Jitter vs Frequency
Figure 6: Idd vs Temperature, 100 MHz Output
Figure 7: Rise Time vs Temperature, 100 MHz Output
Note:
All plots are measured with 15pF load at room temperature, unless otherwise stated.
Rev: 01/30/16_A
Page 3 of 7
ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: e-mail@ilsiamerica.com ●
www.ilsiamerica.com
Specifications subject to change without notice
MEMS Oscillator, Ultra Performance, High Freq., LVCMOS/ HCMOS Compatible, 80.0 MHz to 220.0MHz
IM811 Series
Test Circuit
Waveform
Environmental Specifications:
Environmental Compliance
Parameter
Condition/Test Method
Mechanical Shock
MIL-STD-883F, Method 2002
Mechanical Vibration
Temperature Cycle
Solderability
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL Level 1 at +260ºC
Moisture Sensitivity Level
Pb Free Solder Reflow Profile
Ts max to TL (Ramp-up Rate)
3ºC / second max
Preheat
Temperature min (Ts min)
Temperature typ (Ts typ)
Temperature max (Ts max)
Time (Ts)
150ºC
175ºC
200ºC
60 to180 seconds
Ramp-up Tate (TL to Tp
3ºC / second max
Time Maintained Above
Temperature (TL)
Time (TL)
217ºC
60 to 150 seconds
Peak Temperature (Tp)
260ºC max for seconds
20 to 40 seconds
6ºC / second max
8 minute max
Time within 5ºC to Peak
Temperature (Tp)
Ramp-down Rate
Tune 25ºC to Peak
Temperature
Moisture Sensitivity Level
(MSL)
Level 1
Units are backward compatible with +240ºC reflow processes
Rev: 01/30/16_A
Page 4 of 7
ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: e-mail@ilsiamerica.com ●
www.ilsiamerica.com
Specifications subject to change without notice
MEMS Oscillator, Ultra Performance, High Freq., LVCMOS/ HCMOS Compatible, 80.0 MHz to 220.0MHz
IM811 Series
Pin Functionally
Pin Description
Pin
1
Symbol
OE
Functionality
Pin Assignments
High or Open = specified frequency output
Low = Output is high impedance, only output is disabled.
Tri-state
Standby
High or Open = specified frequency output.
Low = Output is low. Device goes to sleep mode. Supply current
reduces to standby current.
ꢀꢀꢀ
ST
OE
ST
1
2
4
3
Vdd
2
GND
Out
Power
Output
Power
Electrical ground
Oscillator output
Top View
3
4
Vdd
Power supply voltage
GND
OUT
Notes:
ꢀꢀꢀ
1. In OE or ST mode, a pull-up resistor of 10.0 kΩ or less is recommended if Pin 1 is not externally
driven
2. A capacitor of value 0.1 µF or higher between Pin 4 (Vdd) and Pin 1 (GND) is required.
Timing Diagrams:
ꢀꢀꢀꢀ
Figure 9: Standby Resume Timing (ꢁꢂ Mode Only)
ꢀꢀꢀꢀ
Figure 8: Startup Timing (OE/ꢁꢂ Mode)
Figure 10: OE Enable Timing (OE Mode Only)
Figure 11: OE Disable Timing (OE Mode Only)
Rev: 01/30/16_A
Page 5 of 7
ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: e-mail@ilsiamerica.com ●
www.ilsiamerica.com
Specifications subject to change without notice
MEMS Oscillator, Ultra Performance, High Freq., LVCMOS/ HCMOS Compatible, 80.0 MHz to 220.0MHz
IM811 Series
Mechanical Details:
Package Dimensions and Suggest Land Pattern
Option D: 2.70 x 2.40 Package (100% compatible with 2.50 x 2.00)
Suggested Land Pattern
2.50 ±0.05
1.00
1.90
3
4
2.40 ±0.05
Marking
1.10
Bottom View
1.50
0.5
2
1
1.0
1.2
1.6
0.80 max
0.75
1.1
Option C: 3.20 x 2.50 Package
Suggested Land Pattern
3.20 ±0.05
2.1
2.20
3
4
2.50±0.05
Marking
0.90
Bottom View
1.90
0.7
2
1
0.80 max
0.9
1.4
Opton B: 5.00 x 3.20 Package
Suggested Land Pattern
5.00 ±0.05
2.39
2.54
3
4
3.20 ±0.05
Marking
0.80
Bottom View
2
2.20
1
1.1
0.80 max
1.15
1.5
Marking
Package Information
Line 1 = XXXXX (Lot Code)
Dot to denote Pin 1 location
Leadframe: C194
Plating: NiPdAu
Rev: 01/30/16_A
Page 6 of 7
ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: e-mail@ilsiamerica.com ●
www.ilsiamerica.com
Specifications subject to change without notice
MEMS Oscillator, Ultra Performance, High Freq., LVCMOS/ HCMOS Compatible, 80.0 MHz to 220.0MHz
IM811 Series
Tape and Reel Dimensions
PITCH
REEL DIA
TAPE
WIDTH
Q1 Q2
Q3 Q4
DIRECTION OF FEED
REF: EIA-481-E
Part
Number
Tape
Width
Pin
Orient.
Reel
Dia.
Size
Pitch
Count
180
330
180
180
1000
3000
3000
3000
IM811B
5.0 x 3.2
8.0 ± 0.1
12.3 max
Q1
IM811C
IM811D
3.2 x 2.5
2.5 x 2.0
4.0 ± 0.1
4.0 ± 0.1
8.3 max
8.3 max
Q1
Q1
Notes:
All dimensions are in mm.
Do not scale drawings.
PROPRIETARY AND CONFIDENTIAL
THIS DOCUMENT CONTAINS PROPRIETARY INFORMATION, AND SUCH INFORMATION MAY NOT BE DISCLOSED TO OTHERS FOR ANY
PURPOSE NOR USED FOR MANUFACTURING PURPOSES WITHOUT WRITTEN PERMISSION FROM ILSI America.
Rev: 01/30/16_A
Page 7 of 7
ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: e-mail@ilsiamerica.com ●
www.ilsiamerica.com
Specifications subject to change without notice
相关型号:
IM811D
MEMS Oscillator, Ultra Performance, High Freq., LVCMOS/ HCMOS Compatible, 80.0 MHz to 220.0MHz
MMD
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