IDT74FCT827CSO8 [IDT]
Bus Driver, FCT Series, 1-Func, 10-Bit, True Output, CMOS, PDSO24, SOIC-24;
| 型号： | IDT74FCT827CSO8 |
| 厂家： | 
INTEGRATED DEVICE TECHNOLOGY |
| 描述： | Bus Driver, FCT Series, 1-Func, 10-Bit, True Output, CMOS, PDSO24, SOIC-24 驱动 光电二极管 输出元件 逻辑集成电路 |
| 文件： | 总7页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HIGH-PERFORMANCE
CMOS BUFFER
IDT54/74FCT827A/B/C
FEATURES:
DESCRIPTION:
• Faster than AMD's Am29827 series
• Equivalent to AMD's Am29827bipolar buffers in pinout/function,
speed, and output drive over full temperature and voltage
supply extremes
The IDT54/74FCT800 series is built using an advanced dual metal
CMOS technology.
TheIDT54/74FCT82710-bitbusdriversprovidehigh-performancebus
interfacebufferingforwidedata/addresspathsorbusescarryingparity.The
10-bit buffershaveNAND-edoutputenablesformaximumcontrolflexibility.
All of the IDT54/74FCT800 high-performance interface family are de-
signed for high-capacitance load drive capability, while providing low-
capacitance bus loading at both inputs and outputs. All inputs have clamp
diodesandalloutputsaredesignedforlow-capacitancebusloadinginhigh-
impedancestate.
• IDT54/74FCT827A equivalent to FAST™ speed
• IDT54FCT827B 35% faster than FAST
• IDT74FCT827C 45% faster than FAST
• IOL = 48mA (commercial) and 32mA (military)
• Clamp diodes on all inputs for ringing suppression
• CMOS power levels (1mW typ. static)
• TTL input and output level compatible
• CMOS output level compatible
• Substantially lower input current levels than AMD's bilopar
Am29800 series (5µAmax.)
• MIlitary product compliant to MIL-STD-883, Class B
• Available in the following packages:
– Commercial: SOIC
– Military: CERDIP, LCC
FUNCTIONALBLOCKDIAGRAM
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
0
1
2
3
4
5
6
7
8
9
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
OE OE
1
2
TheIDTlogoisaregisteredtrademarkofIntegratedDeviceTechnology,Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
JUNE 2002
1
© 2002 Integrated Device Technology, Inc.
DSC-4612/4
IDT54/74FCT827A/B/C
HIGH-PERFORMANCECMOSBUFFER
MILITARYANDCOMMERCIAL TEMPERATURERANGES
PINCONFIGURATION
INDEX
24
1
OE1
D0
VCC
Y0
23
22
21
20
19
18
17
16
15
14
13
2
3
4
4
3
2
2
8
2
7
2
6
D1
D2
Y1
Y2
5
D2
25
24
23
22
Y2
1
6
D3
D4
NC
D5
D6
D7
Y3
Y4
D3
D4
D5
Y3
Y4
Y5
5
6
7
8
9
7
8
NC
Y5
9
21
20
19
D6
D7
Y6
Y7
10
Y6
11
Y7
12
1
3
1
4
1
5
1
6
1
7
1
8
D8
D9
Y8
10
11
Y9
OE2
GND
12
LCC
TOP VIEW
CERDIP/ SOIC
TOP VIEW
ABSOLUTEMAXIMUMRATINGS(1)
CAPACITANCE (TA = +25°C, F = 1.0MHz)
Parameter(1)
Input Capacitance
Output Capacitance
Conditions
Typ.
Max. Unit
Symbol
Rating
Commercial
Military
Unit
Symbol
(2)
VTERM
Terminal Voltage
–0.5 to +7
–0.5 to +7
V
CIN
VIN = 0V
6
8
10
12
pF
pF
with Respect to GND
Terminal Voltage
COUT
VOUT = 0V
(3)
VTERM
–0.5 to VCC –0.5 to VCC
V
NOTE:
1. This parameter is measured at characterization but not tested.
with Respect to GND
Operating Temperature
Temperature under BIAS
Storage Temperature
Power Dissipation
DC Output Current
TA
0 to +70
–55 to +125
°C
°C
°C
W
TBIAS
TSTG
PT
–55 to +125 –65 to +135
–55 to +125 –65 to +150
LOGICSYMBOL
0.5
0.5
IOUT
120
120
mA
NOTES:
10
10
D0-9
Y0-9
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage may exceed
Vcc by +0.5V unless otherwise noted.
2. Input and Vcc terminals only.
3. Output and I/O terminals only.
OE1
OE2
2
IDT54/74FCT827A/B/C
MILITARYANDCOMMERCIAL TEMPERATURERANGES
HIGH-PERFORMANCECMOSBUFFER
FUNCTIONTABLE(1)
PINDESCRIPTION
Pin Name
I/O
Description
Inputs
Outputs
OEx
I
When both are LOW, the outputs are enabled. When
either one or both are HIGH, the outputs are High Z.
OE1
L
OE2
Dx
L
Yx
L
Function
L
L
Transparent
Dx
Y x
I
10-bit data input
10-bit data output
L
H
X
H
Z
O
H
X
H
3-State
X
X
Z
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Z = High Impedance
DCELECTRICALCHARACTERISTICSOVEROPERATINGRANGE
FollowingConditionsApplyUnlessOtherwiseSpecified:VLC =0.2V;VHC =VCC -0.2V
Commercial: TA = 0°C to +70°C, VCC = 5.0V ±5%, Military: TA = -55°C to +125°C, VCC = 5.0V ±10%
Symbol
VIH
Parameter
Input HIGH Level
Test Conditions(1)
Guaranteed Logic HIGH Level
Min.
2
Typ.(2)
—
Max.
—
Unit
V
VIL
Input LOW Level
Guaranteed Logic LOW Level
—
—
—
—
—
—
0.8
5
V
IIH
Input HIGH Current
VI = VCC
VI = 2.7V
VI = 0.5V
VI = GND
—
(4)
VCC = Max.
—
5
µA
µA
IIL
Input LOW Current
—
–5(4)
—
–5
IOZH
IOZL
VO = VCC
VO = 2.7V
VO = 0.5V
VO = GND
—
—
—
—
—
—
—
10
10(4)
–10(4)
–10
Off State (High Impedance)
Output Current
VCC = Max.
—
—
VIK
IOS
Clamp Diode Voltage
Short Circuit Current
Output HIGH Voltage
VCC = Min., IIN = –18mA
VCC = Max., VO = GND(3)
–0.7
–1.2
V
–75
–120
—
—
—
—
—
mA
VOH
VCC = 3V, VIN = VLC or VHC, IOH = –32µA
VCC = Min
VHC
VHC
2.4
2.4
—
—
—
—
VCC
VCC
4.3
IOH = –300µA
IOH = –15mA MIL
IOH = –24mA COM'L
V
V
VIN = VIH or VIL
4.3
VOL
Output LOWVoltage
VCC = 3V, VIN = VLC or VHC, IOL = 300µA
VCC = Min
GND
GND
0.3
VLC
(4)
IOL = 300µA
IOL = 32mA MIL
IOL = 48mA COM'L
VLC
VIN = VIH or VIL
0.5
0.5
0.3
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5.0V, +25°C ambient and maximum loading.
3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.
4. This parameter is guaranteed but not ttested.
3
IDT54/74FCT827A/B/C
HIGH-PERFORMANCECMOSBUFFER
MILITARYANDCOMMERCIAL TEMPERATURERANGES
POWERSUPPLYCHARACTERISTICS
VLC = 0.2V; VHC = VCC - 0.2V
Symbol
Parameter
Test Conditions(1)
Min.
Typ.(2)
Max.
Unit
ICC
Quiescent Power Supply Current
VCC = Max.
—
0.2
1.5
mA
VIN ≥ VHC; VIN ≤ VLC
∆ICC
Quiescent Power Supply Current
TTL Inputs HIGH
VCC = Max.
VIN = 3.4V(3)
—
—
0.5
2
mA
ICCD
Dynamic Power Supply
Current(4)
VCC = Max.
Outputs Open
OE1 = OE2 = GND
LE = VCC
VIN ≥ VHC
VIN ≤ VLC
0.15
0.25
mA/
MHz
One Input Toggling
50% Duty Cycle
IC
Total Power Supply Current(6)
VCC = Max.
Outputs Open
fi = 10MHz
VIN ≥ VHC
VIN ≤ VLC
(FCT)
—
—
1.7
2
4
5
mA
50% Duty Cycle
OE1 = OE2 = GND
LE = VCC
VIN = 3.4V
VIN = GND
One Bit Toggling
VCC = Max.
Outputs Open
fi = 2.5MHz
VIN ≥ VHC
VIN ≤ VLC
(FCT)
—
—
3.2
5.2
6.5(5)
50% Duty Cycle
OE1 = OE2 = GND
LE = VCC
VIN = 3.4V
VIN = GND
14.5(5)
Eight Bits Toggling
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5.0V, +25°C ambient.
3. Per TTL driven input (VIN = 3.4V). All other inputs at VCC or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of ∆ICC formula. These limits are guaranteed but not tested.
6. IC = IQUIESCENT + IINPUTS + IDYNAMIC
IC = ICC + ∆ICC DHNT + ICCD (fCP/2 + fiNi)
ICC = Quiescent Current
∆ICC = Power Supply Current for a TTL High Input (VIN = 3.4V)
DH = Duty Cycle for TTL Inputs High
NT = Number of TTL Inputs at DH
ICCD = Dynamic Current caused by an Input Transition Pair (HLH or LHL)
fCP = Clock Frequency for register devices (zero for non-register devices)
fi = Input Frequency
Ni = Number of Inputs at fi
All currents are in milliamps and all frequencies are in megahertz.
4
IDT54/74FCT827A/B/C
MILITARYANDCOMMERCIAL TEMPERATURERANGES
HIGH-PERFORMANCECMOSBUFFER
SWITCHINGCHARACTERISTICSOVEROPERATINGRANGE
54/74FCT827A
54FCT827B
Mil.
74FCT827C
Com'l.
Com'l.
Mil.
Symbol
tPLH
Parameter
PropagationDelay
Dx to Yx
Condition(1)
CL = 50pF
RL = 500Ω
CL = 300pF(3)
RL = 500Ω
CL = 50pF
RL = 500Ω
Min.(2)
Max.
Min.(2)
Max.
Min.(2)
Max.
Min.(2)
Max.
Unit
1.5
8
1.5
1.5
1.5
9
1.5
6.5
1.5
1.5
1.5
4.4
ns
tPHL
1.5
1.5
15
12
17
13
1.5
1.5
14
9
10
7
tPZH
tPZL
OutputEnableTime,
ns
ns
OE to Yx
CL = 300pF(3)
1.5
1.5
23
9
1.5
1.5
25
9
1.5
1.5
16
7
1.5
1.5
14
RL = 500Ω
tPHZ
tPLZ
OutputDisableTime,
CL = 5pF(3)
RL = 500Ω
CL = 50pF
RL = 500Ω
5.7
OE to Yx
1.5
10
1.5
10
1.5
8
1.5
6
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. These parameters are guaranteed but not tested.
5
IDT54/74FCT827A/B/C
HIGH-PERFORMANCECMOSBUFFER
MILITARYANDCOMMERCIAL TEMPERATURERANGES
TESTCIRCUITSANDWAVEFORMS
VCC
7.0V
SWITCHPOSITION
500Ω
Test
Switch
Closed
Open
VOUT
VIN
Open Drain
Disable Low
Enable Low
Pulse
Generator
D.U.T
.
50pF
All Other Tests
500Ω
RT
L
C
DEFINITIONS:
CL = Load capacitance: includes jig and probe capacitance.
RT = Termination resistance: should be equal to ZOUT of the Pulse Generator.
Octal link
Test Circuits for All Outputs
3V
DATA
1.5V
0V
INPUT
LOW-HIGH-LOW
PULSE
tH
tSU
1.5V
1.5V
3V
1.5V
0V
TIMING
INPUT
tW
ASYNCHRONOUS CONTROL
tREM
PRESET
3V
1.5V
0V
CLEAR
HIGH-LOW-HIGH
PULSE
ETC.
SYNCHRONOUS CONTROL
PRESET
3V
Octal link
1.5V
0V
CLEAR
tSU
tH
CLOCK ENABLE
ETC.
Pulse Width
Octal link
Set-Up, Hold, and Release Times
ENABLE
DISABLE
3V
1.5V
0V
3V
SAME PHASE
CONTROL
INPUT
1.5V
0V
INPUT TRANSITION
tPLH
tPLH
tPHL
tPHL
tPZL
tPLZ
VOH
1.5V
VOL
OUTPUT
3.5V
1.5V
3.5V
VOL
VOH
OUTPUT
NORMALLY
LOW
SWITCH
CLOSED
0.3V
0.3V
3V
1.5V
0V
tPZH
tPHZ
OPPOSITE PHASE
INPUT TRANSITION
OUTPUT
NORMALLY
HIGH
SWITCH
OPEN
1.5V
0V
Octal link
0V
Octal link
Propagation Delay
Enable and Disable Times
NOTES:
1. Diagram shown for input Control Enable-LOW and input Control Disable-HIGH.
2. Pulse Generator for All Pulses: Rate ≤ 1.0MHz; ZO ≤ 50Ω; tF ≤ 2.5ns; tR ≤ 2.5ns.
6
IDT54/74FCT827A/B/C
MILITARYANDCOMMERCIAL TEMPERATURERANGES
HIGH-PERFORMANCECMOSBUFFER
ORDERINGINFORMATION
IDT
XX
FCT
XXXX
XX
X
Temp. Range
Package
Process
Device Type
Blank
B
Commercial
MIL-STD-883, Class B
Commercial Options
Small Outline IC
SO
Military Options
CERDIP
Leadless Chip Carrier
D
L
High Performance CMOS Buffer, 10-Bit
827A
827B
827C
54
74
– 55°C to +125°C
0°C to +70°C
CORPORATE HEADQUARTERS
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for SALES:
800-345-7015 or 408-727-6116
fax: 408-492-8674
for Tech Support:
logichelp@idt.com
(408) 654-6459
www.idt.com
7
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