F1423 [IDT]
TX Differential Input RF Amplifier;
| 型号： | F1423 |
| 厂家： | 
INTEGRATED DEVICE TECHNOLOGY |
| 描述： | TX Differential Input RF Amplifier |
| 文件： | 总26页 (文件大小：2663K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
F1423
Datasheet
TX Differential Input RF Amplifier
600 MHz to 3000 MHz
G
ENERAL
D
ESCRIPTION
F
EATURES
The F1423 is a 600 MHz to 3000 MHz TX differential
input / singleꢀended output RF amplifier used in
transmitter applications.
•
•
•
•
•
•
•
•
•
•
•
Broadband 600 MHz – 3000 MHz
13.1 dB typical gain @ 2000 MHz
5.1 dB NF @ 2000 MHz
+41.8 dBm OIP3 @ 2000 MHz
+21.5 dBm output P1dB @ 2000 MHz
Single 5 V supply voltage
The F1423 TX Amp provides 13.1 dB gain with
+41.8 dBm OIP3 and 5.1 dB noise figure at 2000 MHz.
This device uses a single 5 V supply and 120 mA of ICC.
I
CC = 120 mA
This device is packaged in a 4mm x 4mm, 24ꢀpin Thin
QFN with 50 ohm differential RF input and 50 ohm
single ended RF output impedances for ease of
integration into the signalꢀpath.
Up to +105 °C TCASE operating temperature
50 ꢁ differential input impedance
50 ꢁ single ended output impedance
Positive gain slope for board loss
compensation
•
•
Standby mode for power savings
4 mm x 4 mm, 24ꢀpin TQFN package
C
OMPETITIVE
ADVANTAGE
In typical Base Stations, RF Amplifiers are used in the
TX traffic paths to drive the transmit power amplifier.
The F1423 TX Amplifier offers very high reliability due
to its construction using silicon die in a QFN package.
The F1423 includes a broadband differential input to
accept ACꢀcoupled signals directly from a balanced
modulator or RF DAC architecture.
F
UNCTIONAL
B
LOCK
D
IAGRAM
RFOUT
RFIN
APPLICATIONS
•
•
•
•
•
•
•
•
Multiꢀmode, Multiꢀcarrier Transmitters
GSM850/900 Base Stations
PCS1900 Base Stations
STBY
BANDSEL
DCS1800 Base Stations
WiMAX and LTE Base Stations
UMTS/WCDMA 3G Base Stations
PHS/PAS Base Stations
O
RDERING NFORMATION
I
Public Safety Infrastructure
Tape &
Reel
F1423NBGI8
RF Product Line
Green
F1423, Rev O 11/6/2015
1
© 2015 Integrated Device Technology, Inc.
F1423
BSOLUTE
A
M
AXIMUM
R
ATINGS
Parameter
Symbol
VCC
Min
ꢀ0.3
ꢀ0.3
Max
+5.5
Units
V
VCC to GND
STBY, Band_Sel
RBIAS1
VCntl
VCC + 0.25
+1.5
V
IRB1
mA
mA
V
RBIAS2
IRB2
+0.8
RFIN+, RFINꢀ, Voltage1
RFIN+, RFINꢀ, Current1
VRFin
IRFin
ꢀ0.02
ꢀ5
+0.02
+5
mA
V
RFOUT externally applied DC voltage
VRFout
VCC ꢀ 0.15
VCC + 0.15
RF Differential Input Power
(applied for 24 hours maximum)
Pin
+22
dBm
Continuous Power Dissipation
Junction Temperature
Pdiss
Tj
1.5
150
150
260
W
°C
°C
°C
Storage Temperature Range
Lead Temperature (soldering, 10s)
Tst
ꢀ65
ElectroStatic Discharge – HBM
(JEDEC/ESDA JSꢀ001ꢀ2014)
Class 2
(2000 V)
ElectroStatic Discharge – CDM
(JESD 22ꢀC101F)
Class C3
(1000 V)
Note 1: The RFIN+ and RFINꢀ pins connect to an internal balun that presents a very low impedance to ground.
Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at
these or any other conditions above those indicated in the operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
P
ACKAGE
THERMAL AND
MOISTURE
C
HARACTERISTICS
θJA (Junction – Ambient)
40 °C/W
4 °C/W
MSL1
θJC (Junction – Case) [The Case is defined as the exposed paddle]
Moisture Sensitivity Rating (Per JꢀSTDꢀ020)
Zero-DistortionTM, TX Amplifier
2
Rev O 11/6/2015
F1423
F1423 RECOMMENDED
O
PERATING
C
ONDITIONS
Parameter
Symbol
VCC
Conditions
All VCC pins
Min
4.75
ꢀ40
Typ
Max
5.25
Units
V
Supply Voltage(s)
Operating Temperature Range
RF Frequency Range
TCASE
FRF
Case Temperature
Operating Range
Differential
+105
30001
°C
600
MHz
ꢁ
RF Source Impedance
RF Load Impedance
ZRFI
50
50
ZRFO
Single Ended
RF Band Designation2
Lowꢀband
ꢁ
FRF_LB
FRF_MB
FRF_HB
FRF_BB
600
1400
2100
600
1100
2100
30001
30001
Midꢀband
RF Frequency Range
MHz
Highꢀband
Broadꢀband
Note 1: Though device linearity is specified over the range from 700 MHz to 2700 MHz, gain flatness up to 3000 MHz
is specified in the highꢀband and broadband tables to account for extended DPD bandwidth requirements.
Note 2: To optimize RF performance, a different output match will be used for each of the 4 RF bands listed (see
Table 2). In addition, different value amplifier bias resistors will be used to optimize performance in each of
the 4 bands.
Rev O 11/6/2015
3
Zero-DistortionTM, TX Amplifier
F1423
F1423 SPECIFICATION - GENERAL
See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF
Amplifier, VCC = +5.0 V, TC = +25 °C.
Parameter
Logic Input High
Logic Input Low
Symbol
VIH
VIL
ISTBY
Condition
Min
1.1
Typ
Max
Units
V
0.63
+10
+10
STBY pin
-10
-10
Logic Current
ꢂA
IBAND
Band_Sel pin
ICC_LB
ICC_MB
ICC_HB
ICC_BB
ICC_STBY
Lowꢀband bias setting
Midꢀband bias setting
Highꢀband bias setting
Broadꢀband bias setting
STBY = 5V
50% STBY to RF output
settled to within ±0.5dB
50% STBY to DC standby
current settled to within
±2mA of final ICC value
103
120
120
120
0.8
Supply Current3
mA
135 1
1.0
Standby Current
mA
µs
Power ON switching time
TON
1
Power OFF switching time
TOFF
1
µs
Note 1: Items in min/max columns in bold italics are Guaranteed by Test.
Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization.
Note 3: Use external resistors to set amplifier bias currents to optimize device linearity. See Table 2.
Zero-DistortionTM, TX Amplifier
4
Rev O 11/6/2015
F1423
F1423 SPECIFICATION – LOW-BAND
See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF
Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 700 MHz, Pout = +7 dBm, R8 =2.1 kΩ, R9 =9.1 kΩ, C1 = 9 pF,
Rsource = 50 Ω differential, Rload = 50 Ω singleꢀended, Band_Sel = open, EVKit trace connector and transformer
losses are deꢀembedded.
Parameter
RF Input Return Loss
RF Output Return Loss
Common Mode Rejection
Gain
Symbol
RFINRL_LB
RFOUTRL_LB
CMRRLB
GLB
Condition
Min
Typ
17
Max
13.2
Units
dB
12.8
20.7
12.6
dB
700 MHz to 1100 MHz
dB
12.0 1
dB
Any 400 MHz BW from
700 MHz to 1100 MHz
In any 20 MHz range over
RF Band
Gain Flatness
Gain Ripple
GFLAT_LB
GRIPPLE_LB
NFLB
0.4
dB
dB
dB
±0.04
4.5
5.4
Noise Figure3
Tcase = +105 °C
Output Third Order
Intercept Point3
Output 1dB Compression3
Pout = +4 dBm/tone
5 MHz tone separation
OIP3LB
392
20
42.5
21.1
dBm
dBm
OP1dBLB
F1423 SPECIFICATION – MID-BAND
See F1423 Typical Application Circuit Unless otherwise stated, specifications apply when operated as a TX RF
Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 2000 MHz, Pout = +7 dBm, R8 =2.4 kΩ, R9 =60.4 kΩ, C1 = 9 pF,
Rsource = 50 Ω differential, Rload = 50 Ω singleꢀended, Band_Sel = GND, EVKit trace connector and transformer
losses are deꢀembedded.
Parameter
RF Input Return loss
RF Output Return Loss
Common Mode Rejection
Gain
Symbol
RFINRL_MB
RFOUTRL_MB
CMRRMB
GMB
Condition
Min
Typ
15
Max
Units
dB
16.5
19.0
13.1
dB
1400 MHz to 2100 MHz
dB
12.5 1
13.7
dB
Any 400MHz BW from
1400 MHz to 2100 MHz
In any 20 MHz range over
RF Band
Gain Flatness
Gain Ripple
GFLAT_MB
GRIPPLE_MB
NFMB
0.17
dB
dB
dB
±0.01
5.1
5.8
Noise Figure3
Tcase = +105 °C
Output Third Order
Intercept Point3
Output 1dB Compression3
Pout = +4 dBm/tone
5MHz tone separation
OIP3MB
38.82
20.3
41.8
21.5
dBm
dBm
OP1dBMB
Note 1: Items in min/max columns in bold italics are Guaranteed by Test.
Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization.
Note 3: Measured using external 1:1 transformer at the RF input.
Rev O 11/6/2015
5
Zero-DistortionTM, TX Amplifier
F1423
F1423 Specification – High-Band
See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF
Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 2700 MHz, Pout = +7 dBm, R8 =2.4 kΩ, R9 =60.4 kΩ, C1 = 6 pF,
Rsource = 50 Ω differential, Rload = 50 Ω singleꢀended, Band_Sel = GND, EVKit trace connector and transformer
losses are deꢀembedded.
Parameter
RF Input Return loss
RF Output Return Loss
Common Mode Rejection
Gain
Symbol
RFINRL_HB
RFOUTRL_HB
CMRRHB
GHB
Condition
Min
Typ
15.5
20
Max
Units
dB
dB
2100 MHz to 3000 MHz
18.5
13.1
dB
12.4 1
13.9
dB
Any 400 MHz BW from
2100 MHz to 3000 MHz
In any 20 MHz range over
RF Band
Gain Flatness
Gain Ripple
GFLAT_HB
GRIPPLE_HB
NFHB
0.23
dB
dB
dB
±0.015
6.0
6.6
Noise Figure3
Tcase = +105 °C
Output Third Order
Intercept Point3
Output 1dB Compression3
Pout = +4 dBm/tone
5MHz tone separation
OIP3HB
37.3
20.6
dBm
dBm
OP1dBHB
20.02
F1423 Specification – Broad-Band
See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF
Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 2200 MHz, Pout = +7 dBm, R8 =2.4 kΩ, R9 =60.4 kΩ, C1 = 9 pF,
Rsource = 50 Ω differential, Rload = 50 Ω singleꢀended, Band_Sel = GND, EVKIT trace connector and transformer
losses are deꢀembedded.
Parameter
RF Input Return loss
RF Output Return Loss
Common Mode Rejection
Gain
Symbol
RFINRL_BB
RFOUTRL_BB
CMRRBB
GBB
Condition
Min
Typ
15.0
18.5
18.5
13.2
Max
Units
dB
dB
700 MHz to 3000 MHz
dB
12.6 1
13.8
dB
Any 400 MHz BW from
700 MHz to 3000 MHz
In any 20 MHz range over
400 MHz BW
Gain Flatness
GFLAT_BB
0.4
dB
Gain Ripple
Gain Slope
GRIPPLE_BB
GSLOPE_BB
NFBB
±0.04
dB
dB/MHz
dB
±0.002
5.2
Noise Figure3
Tcase = +105 °C
5.8
Output Third Order
Intercept Point3
Output 1dB Compression3
Pout = +4 dBm/tone
5 MHz tone separation
OIP3BB
41.4
21.4
dBm
dBm
OP1dBBB
20.52
Note 1: Items in min/max columns in bold italics are Guaranteed by Test.
Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization.
Note 3: Measured using external 1:1 transformer at the RF input.
Zero-DistortionTM, TX Amplifier
6
Rev O 11/6/2015
F1423
Table1: STBY Truth Table
Parameter
Level
Logic Low or Open Circuit
Logic High
Function
Powered On
Powered Off
STBY
Table2: Component Settings for Optimized Linearity Performance per RF band
Frequency Range
(MHz)
Band_Sel
(Pin 11)
Open
Pin 14 to GND
Pin 15 to GND
C1
(pF)
9
9
6
9
ICC
(mA)
104
120
120
120
Band
(kΩ)
2.1
2.4
2.4
(kΩ)
9.1
60.4
60.4
60.4
Low ꢀ Band
Mid ꢀ Band
High ꢀ Band
Broad ꢀ Band
600 ꢀ 1100
1400 ꢀ 2100
2100 ꢀ 3000
700 ꢀ 3000
GND
GND
GND
2.4
TYPICAL
O
PERATING
CONDITIONS (TOC)
Unless otherwise noted for the TOC graphs on the following pages, the following conditions apply.
•
•
•
•
•
•
•
•
•
Vcc= 5.0 V
Tcase = 25 °C (All temperatures are referenced to the exposed paddle).
ZS = 50 Ohms Differential
ZL = 50 Ohms Single Ended
Board configured as defined in Table 2 for each band.
Pout = 4 dBm / Tone
5 MHz Tone Spacing
EVKIT traces, connectors, and transformer losses are de-embedded.
S-parameters (S11, S21, S12, and S22) measured using a de-embedded Differential Board EVKit
and the inputs are mathematically combined using an ideal 1:1 (50 ꢁ : 50 ꢁ) transformer to
produce the 2 port S-parameters.
•
•
Amplitude and phase imbalances measures RFIN+ to RFOUT and compares to RFIN- to RFOUT.
Phase imbalance is the deviation from an ideal 180 degrees.
OIP3, Output P1dB and Noise Figure measured using a Transformer Board EVKit.
Note: The use of the external transformer T1 is included for simple 2 port evaluation purposes.
At some frequencies the external transformer interacts with the onꢀchip balun affecting the gain and noise
figure flatness responses. These interactions have been removed from the noise figure TOCs.
Rev O 11/6/2015
7
Zero-DistortionTM, TX Amplifier
F1423
TOC
S
[DIFFERENTIAL
B
OARD S-PARS, AMPLITUDE AND
P
HASE
IMBALANCE, BROAD-BAND BIAS](-1-)
RF Gain vs. Vcc and TCASE
Input Match vs. Vcc and TCASE
15
0
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.25V, -40C
5.25V, 25C
5.25V, 105C
14.5
-5
-10
-15
-20
-25
-30
-35
-40
5.00V, 25C
5.00V, 105C
14
13.5
13
12.5
12
11.5
11
10.5
10
0.6
0.9
1.2
1.5
1.8
2.1
Frequency (GHz)
2.4
2.7
3
0.6
0.9
1.2
1.5
1.8
2.1
Frequency (GHz)
2.4
2.7
3
3
3
Output Match vs. Vcc and TCASE
Reverse Gain vs. Vcc and TCASE
0
-12
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
-14
-16
-18
-20
-22
-24
-26
-28
-5
-10
-15
-20
-25
-30
0.6
0.9
1.2
1.5 2.1
Frequency (GHz)
1.8
2.4
2.7
3
0.6
0.9
1.2
1.5 2.1
Frequency (GHz)
1.8
2.4
2.7
Amplitude Imbalance vs. TCASE
Phase Imbalance vs. TCASE
1.5
20
-40C
25C
1
Z
Z
S
L
= 25 Ohm / port
= 50 Ohm
-40C
25C
Z
Z
S
L
= 25 Ohm / port
= 50 Ohm
15
105C
105C
10
0.5
5
0
0
-0.5
-1
-5
-10
-15
-20
-1.5
0.6
0.9
1.2
1.5 2.1
Frequency (GHz)
1.8
2.4
2.7
3
0.6
0.9
1.2
1.5 2.1
Frequency (GHz)
1.8
2.4
2.7
Zero-DistortionTM, TX Amplifier
8
Rev O 11/6/2015
F1423
TOC
S
[TRANSFORMER
B
OARD, OIP3, P1dB, NOISE
F
IGURE, ICC, BROAD-BAND
OIP3 vs. Pout Level
BIAS](-2-)
OIP3 vs. Vcc and TCASE
60
60
0dBm/tone
2dBm/tone
4dBm/tone
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
55
55
50
50
45
40
35
30
25
20
15
10
45
40
35
30
25
20
15
10
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
Frequency (GHz)
Frequency (GHz)
Output P1dB vs. Vcc and TCASE
Noise Figure vs. Vcc and TCASE
24
8
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
7.5
7
23
22
21
20
19
18
6.5
6
5.5
5
4.5
4
0.6
0.9
1.2
1.5
Frequency (GHz)
1.8
2.1
2.4
2.7
3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
Frequency (GHz)
Icc vs. Vcc and TCASE
140
-40C
25C
135
130
125
120
115
110
105
100
105C
4.75
5
5.25
Vcc (Volts)
Rev O 11/6/2015
9
Zero-DistortionTM, TX Amplifier
F1423
TOC
S
[DIFFERENTIAL
B
OARD S-PARS, AMPLITUDE AND
P
HASE
IMBALANCE, LOW-BAND
B
IAS](-3-)
RF Gain vs. Vcc and TCASE
Input Match vs. Vcc and TCASE
15
0
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
14.5
-5
-10
-15
-20
-25
-30
-35
-40
14
13.5
13
12.5
12
11.5
11
10.5
10
0.6
0.7
0.8
0.9
Frequency (GHz)
1
1.1
1.2
1.3
1.3
1.3
0.6
0.7
0.8
0.9
Frequency (GHz)
1
1.1
1.2
1.3
1.3
1.3
Output Match vs. Vcc and TCASE
Reverse Gain vs. Vcc and TCASE
0
-12
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
-14
-16
-18
-20
-22
-24
-26
-28
-5
-10
-15
-20
-25
-30
0.6
0.7
0.8
0.9
Frequency (GHz)
1
1.1
1.2
0.6
0.7
0.8
0.9
Frequency (GHz)
1
1.1
1.2
Amplitude Imbalance vs. TCASE
Phase Imbalance vs. TCASE
1.5
20
Z
Z
S
L
= 25 Ohm / port
= 50 Ohm
-40C
-40C
25C
Z
Z
S
L
= 25 Ohm / port
= 50 Ohm
15
25C
1
105C
105C
10
0.5
5
0
0
-0.5
-1
-5
-10
-15
-20
-1.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0.6
0.7
0.8
0.9 1
Frequency (GHz)
1.1
1.2
Frequency (GHz)
Zero-DistortionTM, TX Amplifier
10
Rev O 11/6/2015
F1423
TOC [TRANSFORMER BOARD, OIP3, P1dB, NOISE FIGURE, ICC, LOW-BAND BIAS](-4-)
S
OIP3 vs. Vcc and TCASE
Output P1dB vs. Vcc and TCASE
24
60
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
55
23
22
21
20
19
18
50
45
40
35
30
25
20
15
10
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
0.6
0.7
0.8
0.9 1
Frequency (GHz)
1.1
1.2
1.3
Frequency (GHz)
Icc vs. Vcc and TCASE
Noise Figure vs. Vcc and TCASE
125
7
-40C
25C
105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
120
115
110
105
100
95
6.5
6
5.5
5
4.5
4
90
3.5
3
85
4.75
5
Vcc (Volts)
5.25
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
Frequency (GHz)
Rev O 11/6/2015
11
Zero-DistortionTM, TX Amplifier
F1423
TOC
S
[DIFFERENTIAL
B
OARD S-PARS, AMPLITUDE AND
P
HASE
IMBALANCE, MID-BAND
B
IAS](-5-)
RF Gain vs. Vcc and TCASE
Input Match vs. Vcc and TCASE
14.5
0
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
14
13.5
13
-5
-10
-15
-20
-25
-30
12.5
12
11.5
11
10.5
1.4
1.5
1.6
1.7 1.8
Frequency (GHz)
1.9
2
2.1
2.1
2.1
1.4
1.5
1.6
1.7 1.8
Frequency (GHz)
1.9
2
2.1
2.1
2.1
Output Match vs. Vcc and TCASE
Reverse Gain vs. Vcc and TCASE
0
-12
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
-14
-16
-18
-20
-22
-24
-26
-28
-5
-10
-15
-20
-25
-30
1.4
1.5
1.6
1.7 1.8
Frequency (GHz)
1.9
2
1.4
1.5
1.6
1.7
1.8
1.9
2
Frequency (GHz)
Amplitude Imbalance vs. TCASE
Phase Imbalance vs. TCASE
1.5
20
Z
Z
S
L
= 25 Ohm / port
= 50 Ohm
-40C
-40C
25C
Z
Z
S
L
= 25 Ohm / port
= 50 Ohm
15
25C
1
105C
105C
10
0.5
5
0
0
-0.5
-1
-5
-10
-15
-20
-1.5
1.4
1.5
1.6
1.7
1.8
1.9
2
1.4
1.5
1.6
1.7 1.8
Frequency (GHz)
1.9
2
Frequency (GHz)
Zero-DistortionTM, TX Amplifier
12
Rev O 11/6/2015
F1423
TOC [TRANSFORMER BOARD, OIP3, P1dB, NOISE FIGURE, ICC, MID-BAND BIAS](-6-)
S
OIP3 vs. Vcc and TCASE
Output P1dB vs. Vcc and TCASE
60
24
4.75V, -40C
4.75V, 25C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
55
23
22
21
20
19
18
4.75V, 105C
50
45
40
35
30
25
20
15
10
1.4
1.5
1.6
1.7 1.8
Frequency (GHz)
1.9
2
2.1
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
Frequency (GHz)
Noise Figure vs. Vcc and TCASE
Icc vs. Vcc and TCASE
8
140
-40C
25C
105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
7.5
7
135
130
125
120
115
110
105
100
6.5
6
5.5
5
4.5
4
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
4.75
5
5.25
Frequency (GHz)
Vcc (Volts)
Rev O 11/6/2015
13
Zero-DistortionTM, TX Amplifier
F1423
TOC
S
[DIFFERENTIAL
B
OARD S-PARS, AMPLITUDE AND
P
HASE
IMBALANCE, HIGH-BAND BIAS](-7-)
RF Gain vs. Vcc and TCASE
Input Match vs. Vcc and TCASE
15
0
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
14.5
14
5.00V, 25C
5.00V, 105C
-5
-10
-15
-20
-25
-30
-35
-40
13.5
13
12.5
12
11.5
11
10.5
10
2
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9
3
3
3
2
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9
3
3
3
Frequency (GHz)
Frequency (GHz)
Output Match vs. Vcc and TCASE
Reverse Gain vs. Vcc and TCASE
0
-12
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
-14
-16
-18
-20
-22
-24
-26
-28
-5
-10
-15
-20
-25
-30
2
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9
2
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9
Frequency (GHz)
Frequency (GHz)
Amplitude Imbalance vs. TCASE
Phase Imbalance vs. TCASE
1.5
20
Z
Z
S
L
= 25 Ohm / port
= 50 Ohm
-40C
-40C
Z
Z
S
L
= 25 Ohm / port
= 50 Ohm
15
25C
25C
1
105C
105C
10
0.5
5
0
0
-0.5
-1
-5
-10
-15
-20
-1.5
2
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9
2
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9
Frequency (GHz)
Frequency (GHz)
Zero-DistortionTM, TX Amplifier
14
Rev O 11/6/2015
F1423
TOC
S
[TRANSFORMER
B
OARD, OIP3, P1dB, NOISE
F
IGURE, ICC, ACLR, HIGH-BAND BIAS](-8-)
OIP3 vs. Vcc and TCASE
Output P1dB vs. Vcc and TCASE
60
24
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
55
23
22
21
20
19
18
50
45
40
35
30
25
20
15
10
2
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9
Frequency (GHz)
3
2
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9
3
Frequency (GHz)
Noise Figure vs. Vcc and TCASE
Icc vs. Vcc and TCASE
8
140
-40C
25C
105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
7.5
7
135
130
125
120
115
110
105
100
6.5
6
5.5
5
4.5
4
2
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9
3
4.75
5
5.25
Frequency (GHz)
Vcc (Volts)
WCDMA ACLR vs. Pout (PAR = 4.3 dB)
WCDMA ACLR vs. Pout (PAR = 11.4 dB)
-20
-20
ACLR1+
ACLR1-
ACLR2+
ACLR2-
ACLR1+
ACLR1-
ACLR2+
ACLR2-
-30
-40
-50
-60
-70
-80
-30
-40
-50
-60
-70
-80
Measurement at 2.7 GHz
1 DPCH, PAR = 4.3 dB
Specified Pout = 7 dBm
Measurement at 2.7 GHz
64 DPCH, PAR = 11.4 dB
Specified Pout = 7 dBm
2
3
4
5
6
7
8
9
10
11
12
2
3
4
5
6
7
8
9
10
11
12
Average WCDMA POUT (dBm)
Average WCDMA POUT (dBm)
Rev O 11/6/2015
15
Zero-DistortionTM, TX Amplifier
F1423
P
ACKAGE
D
RAWING
(4 mm x 4 mm 24ꢀpin TQFN), NBG24
N
OTE: THE F1423 USES THE P2 EXPOSED PADDLE DIMENSIONS NOTED BELOW
Zero-DistortionTM, TX Amplifier
16
Rev O 11/6/2015
F1423
LAND
P
ATTERN
D
IMENSION
Land Pattern to Support 2.6 mm x 2.6 mm Exposed Paddle Version
(See Version P2 of Package Drawing)
Rev O 11/6/2015
17
Zero-DistortionTM, TX Amplifier
F1423
IN
P
D
IAGRAM
1
2
3
4
5
6
18
17
16
15
14
13
RFIN+
GND
GND
RFOUT
GND
RFIN-
GND
RBIAS2
RBIAS1
STBY
Control
Circuit
NC
NC
E.P.
P
IN
D
ESCRIPTION
Pin
Name
Function
Differential Input +. Pin looks like a DC short to ground. Must use
external DC block if DC is present on RF line.
1
RFIN+
2, 4, 9, 12, 16,
18, 23
Ground these pins. These pins are internally connected to the
exposed paddle.
Differential Input ꢀ. Pin looks like a DC short to ground. Must use
external DC block if DC is present on RF line.
No internal connection. OK to connect to GND, OK to connect to
VCC. Application circuit ties these pins to ground.
5 V Power Supply. Connect to VCC and use bypass capacitors as
close to the pin as possible.
GND
RFINꢀ
NC
3
5, 6, 7, 8, 19,
20, 21, 22, 24
10
VCC
Leave pin open circuited for lowꢀband select and connect 0 ꢀ resistor
to GND for highꢀband select. Internally this pin has a 1.5 MΩ pullꢀup
resistor that connects to VCC.
Standby (High= device power OFF, Low/Open = device power ON).
Internally this pin has a 1 MΩ pullꢀdown resistor that is connected to
GND.
11
Band_Sel
STBY
13
14
15
RBIAS1
RBIAS2
Connect external resistor to GND. Use value in Table 2.
Connect external resistor to GND. Use value in Table 2.
RF output. Must use external DC block as close to the pin as
possible.
17
RFOUT
Exposed Pad. Internally connected to GND. Solder this exposed pad
to a PCB pad that uses multiple ground vias to provide heat transfer
out of the device into the PCB ground planes. These multiple ground
vias are also required to achieve the noted RF performance.
— EP
Zero-DistortionTM, TX Amplifier
18
Rev O 11/6/2015
F1423
A
PPLICATIONS NFORMATION
I
The F1423 has been optimized for use in high performance RF applications from 600 MHz to 3000 MHz.
STBY
The STBY control pin allows for power saving when the device is not in use. Setting the STBY pin to a logic
low, or leaving the pin open, will put the device in normal operation mode. The STBY pin has an internal
1 Meg ohm resistor to ground. Applying a logic high to this pin will put the part in standby mode. Voltage
should not be applied to the STBY pin without VCC present.
Band_Sel
The Band_Sel control pin can be used to adjust the current in the device for Mid Band, High Band, and Wide
Band frequency applications. This is done by grounding the Band_Sel pin. Internally there is a 1.5 Meg ohm
pullꢀup resistor. Voltage should not be applied to the Band_Sel pin without VCC present.
RBias1 and RBias2
RBIAS1 (pin 14) and RBIAS2 (pin 15) use a single external resistor to ground on each pin to set the DC
current in the device and to optimize the linearity performance of the amplifier stage. The resistor values in
Table 2 can be used as a guide for the RF band of interest. By decreasing the resistor value to ground on the
RBIAS1 pin will increase the DC current in the amplifier stage. The resistor to ground on RBIAS2 is used to
optimize the linearity performance in conjunction with the resistor on RBIAS1.
Amplifier Stability
To ensure unconditional stability the value of R1 should be set to 510 Ohms. This will reduce the RF Gain,
OIP3, and OP1dB by approx 0.4 dB. Additionally, shunt resistors to ground of approximately 1k ohm should be
connected from pin 1 to ground and pin 3 to ground. This will stabilize the circuit due to common mode
source impedances. The installed 1k resistor will add 0.1 dB degradation to the Gain and Noise Figure. The
1k ohm will also dampen any common mode amplitude and phase interactions from the differential source
impedance and the F1423 differential input impedance.
Power Supplies
A common VCC power supply should be used for all pins requiring DC power. All supply pins should be
bypassed with external capacitors to minimize noise and fast transients. Supply noise can degrade noise figure
and fast transients can trigger ESD clamps and cause them to fail. Supply voltage change or transients should
have a slew rate smaller than 1 V / 20 µs. In addition, all control pins should remain at 0 V (+/ꢀ0.3 V) while the
supply voltage ramps or while it returns to zero.
Control Pin Interface
If control signal integrity is a concern and clean signals cannot be guaranteed due to overshoot, undershoot,
ringing, etc., the following circuit at the input of each control pin is recommended. This applies to all control
pins 11 and 13. Note the recommended resistor and capacitor values do not necessarily match the EV kit BOM
for the case of poor control signal integrity.
1
2
3
4
5
6
18
17
16
15
14
13
F1423
Exposed Pad (GND)
5k ohm
STBY
2pF
5k ohm
Band_Sel
2pF
Rev O 11/6/2015
19
Zero-DistortionTM, TX Amplifier
F1423
EVKIT
P
ICTURE (DIFFERENTIAL
B
OARD
)
EVKIT
P
ICTURE (TRANSFORMER
B
OARD
)
Zero-DistortionTM, TX Amplifier
20
Rev O 11/6/2015
F1423
EVKIT / APPLICATIONS
C
IRCUIT (DIFFERENTIAL
B
OARD
)
EVKit / Applications Circuit (Transformer Board)
Rev O 11/6/2015
21
Zero-DistortionTM, TX Amplifier
F1423
EVKIT BOM (DIFFERENTIAL
B
OARD
)
Part Ref
QTY
1
DESCRIPTION
Mfr. Part #
Mfr.
C1
C2
9.0 pF ±0.25 pF, 50 V, C0G, Ceramic Capacitor (0402)
1000 pF ±5%, 50 V, C0G, Ceramic Capacitor (0402)
0.1 µF ±10%, 16 V, X7R, Ceramic Capacitor (0402)
10 µF ±20%, 6.3 V, X5R, Ceramic Capacitor (0603)
Not installed (0402)
GRM1555C1H9R0C
GRM1555C1H102J
GRM155R71C104K
GRM188R60J106M
Murata
Murata
Murata
Murata
1
C3
1
C4
1
R1
1
R2, R3, R4
R5, R6
R7
3
0 Ω Resistor, 1/10W, (0402)
ERJꢀ2GE0R00X
Panasonic
0
Not installed
1
2.1k ꢁ ±1%, Resistor, 1/10W, (0402)
2.4k ꢁ ±1%, Resistor, 1/10W, (0402)
60.4k ꢁ ±1%, Resistor, 1/10W, (0402)
9.1k ꢁ ±1%, Resistor, 1/10W, (0402)
Not installed
ERJꢀ2RKF2101X
ERJꢀ2RKF2401X
ERJꢀ2RKF6042X
ERJꢀ2RKF9101X
Panasonic
Panasonic
Panasonic
Panasonic
R8
1
R9
1
R10
1
R11
1
R12
1
Not installed
J1, J2, J3, J9
J4, J5, J8
J6, J7
U1
4
SMA_END_LAUNCH (small)
142ꢀ0711ꢀ821
961102ꢀ6404ꢀAR
67997ꢀ108HLF
Emerson Johnson
3
CONN HEADER VERT 2 x 1 Gold
CONN HEADER VERT 2 x 4 Gold
RF Amplifier
3M
FCI
IDT
2
1
F1423NBGI
1
Printed Circuit Board (3 port)
F1423 EVKIT (3 port)
Zero-DistortionTM, TX Amplifier
22
Rev O 11/6/2015
F1423
EVKIT BOM (TRANSFORMER
B
OARD
)
Part Ref
C1
QTY
1
DESCRIPTION
Mfr. Part #
Mfr.
9.0 pF ±0.25 pF, 50 V, C0G, Ceramic Capacitor (0402)
1000 pF ±5%, 50 V, C0G, Ceramic Capacitor (0402)
0.1 µF ±10%, 16 V, X7R, Ceramic Capacitor (0402)
10 µF ±20%, 6.3 V, X5R, Ceramic Capacitor (0603)
Not installed (0402)
GRM1555C1H9R0C
GRM1555C1H102J
GRM155R71C104K
GRM188R60J106M
Murata
Murata
Murata
Murata
C2
1
C3
1
C4
1
R1
1
R2, R3, R4
R5, R6
R7
3
0 Ω Resistor, 1/10W, (0402)
ERJꢀ2GE0R00X
Panasonic
0
Not installed
1
2.1k ꢁ ±1%, Resistor, 1/10W, (0402)
2.4k ꢁ ±1%, Resistor, 1/10W, (0402)
60.4k ꢁ ±1%, Resistor, 1/10W, (0402)
9.1k ꢁ ±1%, Resistor, 1/10W, (0402)
Not installed
ERJꢀ2RKF2101X
ERJꢀ2RKF2401X
ERJꢀ2RKF6042X
ERJꢀ2RKF9101X
Panasonic
Panasonic
Panasonic
Panasonic
R8
1
R9
1
R10
1
R11
1
R12
1
Not installed
R13, R14
T1
2
510 ꢁ ±1%, Resistor, 1/10W, (0402) (Note 1)
1:1 wideband transformer
ERJꢀ2RKF5100X
TC1ꢀ1ꢀ43+
Panasonic
1
Mini Circuits
J1, J3, J9
J4, J5, J8
J6, J7
U1
3
SMA_END_LAUNCH (small)
142ꢀ0711ꢀ821
961102ꢀ6404ꢀAR
67997ꢀ108HLF
F1423NBGI
Emerson Johnson
3
CONN HEADER VERT 2 x 1 Gold
CONN HEADER VERT 2 x 4 Gold
RF Amplifier
3M
FCI
IDT
2
1
1
Printed Circuit Board (Transformer)
F1423 EVKIT XFMR
Note 1: When using an external transformer for evaluation, a common mode resonance interaction can occur with the
onꢀchip balun. Resistors R13 and R14 will dampen the resonance but affects the Gain and NF by approx 0.2dB.
TOP
MARKINGS
Part Number
IDTF14
23NBGI
Z512ACG
Assembler
Code
ASM
Test
Step
Date Code [YWW]
(Week 12 of 2015)
Rev O 11/6/2015
23
Zero-DistortionTM, TX Amplifier
F1423
EVKIT
O
PERATION
The F1423 EVkits (single ended and differential) have a number of control features available.
STBY (2 pin Header J5)
Twoꢀpin header J5 can be used to set the part for operational or standby mode. Leaving the two J5
pins unconnected will place it in the operational mode. Connecting the two J5 pins together will pull
up the STBY pin to Vcc through R4 and place the part into the standby mode.
Band_Sel (2 pin Header J4)
Twoꢀpin header J4 can be used to set the part for best operational performance in different RF bands.
Based on Table 2 above the LowꢀBand performance is best with these two J4 pins left open while the
other bands typically have these two pins shorted together.
RF Band Biasing (RBIAS1, RBIAS2, Band_Sel)
Below are 4 settings showing the recommended J4, J7, and J8 jumper connections for best linearity
performance in the different RF bands. The jumpers (shown in red below) select the RBIAS1 and
RBIAS2 resistor values along with the Band_Sel setting (see Table 2 above). Never have two shunts
installed at the same time on header J7 since this may produce excessive bias current and damage
the part.
Broad-Band
Low-Band
Mid-Band
High-Band
Zero-DistortionTM, TX Amplifier
24
Rev O 11/6/2015
F1423
R
EVISION
HISTORY
SHEET
Rev
O
Date
2015ꢀ Novꢀ6
Page
Description of Change
Initial Release
Rev O 11/6/2015
25
Zero-DistortionTM, TX Amplifier
F1423
Corporate Headquarters
6024 Silver Creek Valley Road
San Jose, CA 95138 USA
Sales
Tech Support
http://www.idt.com/support/technical-support
1-800-345-7015 or 408-284-8200
Fax: 408-284-2775
www.idt.com
DISCLAIMER Integrated Device Technology, Inc. (IDT) reserves the right to modify the products and/or specifications described herein at any time, without notice, at IDT’s sole discretion.
Performance specifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer
products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT’s products for
any particular purpose, an implied warranty of merchantability, or nonꢀinfringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any
license under intellectual property rights of IDT or any third parties.
IDT’s products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can
be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT.
Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are
the property of IDT or their respective third party owners.
Copyright ©2015. Integrated Device Technology, Inc. All rights reserved.
Zero-DistortionTM, TX Amplifier
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Rev O 11/6/2015
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