854S54AKI-01LFT [IDT]

Dual 2:1, 1:2 Differential-to-LVDS Multiplexer;
854S54AKI-01LFT
型号: 854S54AKI-01LFT
厂家: INTEGRATED DEVICE TECHNOLOGY    INTEGRATED DEVICE TECHNOLOGY
描述:

Dual 2:1, 1:2 Differential-to-LVDS Multiplexer

文件: 总17页 (文件大小:229K)
中文:  中文翻译
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Dual 2:1, 1:2 Differential-to-LVDS  
Multiplexer  
ICS854S54I-01  
Datasheet  
Description  
Features  
The ICS854S54I-01 is a 2:1/1:2 Multiplexer. The 2:1 Multiplexer  
allows one of two inputs to be selected onto one output pin and the  
1:2 MUX switches one input to both outputs. This device may be  
useful for multiplexing multi-rate Ethernet PHYs which have 100Mbit  
and 1000Mbit transmit/receive pairs onto an optical SFP module  
which has a single transmit/receive pair. Another mode allows loop  
back testing and allows the output of a PHY transmit pair to be routed  
to the PHY input pair. For examples, please refer to the Application  
Information section of the data sheet.  
Dual 2:1, 1:2 MUX  
Three LVDS output pairs  
Three differential clock inputs can accept: LVPECL, LVDS, CML  
Loopback test mode available  
Maximum output frequency: 2.5GHz  
Propagation delay: 600ps (maximum)  
Part-to-part skew: 300ps (maximum)  
Additive phase jitter, RMS: 0.031ps (typical)  
Full 2.5V supply mode  
The ICS854S54I-01 is optimized for applications requiring very high  
performance and has a maximum operating frequency of 2.5GHz.  
The device is packaged in a small, 3mm x 3mm VFQFN package,  
making it ideal for use on space-constrained boards.  
-40°C to 85°C ambient operating temperature  
Available in lead-free (RoHS 6) package  
Pin Assignment  
Block Diagram  
SELB  
16 15 14 13  
1
2
3
12  
11  
10  
QA0  
nQA0  
QA1  
INA0  
nINA0  
INA1  
INA0  
nINA0  
nQA1  
4
nINA1  
9
5
6
7
8
INB  
LOOP0  
0
nINB  
QA0  
ICS854S54I-01  
nQA0  
16-Lead VFQFN  
3mm x 3mm x 0.925mm package body  
Top View  
1
0
QB  
nQB  
INA1  
1
nINA1  
LOOP1  
QA1  
nQA1  
SELA  
ICS854S54I-01 July 17, 2017  
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©2017 Integrated Device Technology, Inc.  
ICS854S54I-01 Datasheet  
DUAL 2:1, 1:2 DIFFERENTIAL-TO-LVDS MULTIPLEXER  
Table 1. Pin Descriptions  
Number  
1, 2  
Name  
QA0, nQA0  
QA1, nQA1  
INB  
Type  
Description  
Output  
Output  
Input  
Differential output pair. LVDS interface levels.  
Differential output pair. LVDS interface levels.  
Non-inverting differential clock input.  
3, 4  
5
Pulldown  
Pullup/  
Pulldown  
6
nINB  
Input  
Inverting differential clock input. VDD/2 default when left floating.  
Select pin for QAx outputs. When HIGH, selects same inputs used for QB output.  
When LOW, selects INB input. LVCMOS/LVTTL interface levels.  
7
8
SELB  
GND  
Input  
Power  
Input  
Input  
Input  
Pulldown  
Power supply ground.  
Pullup/  
Pulldown  
9
nINA1  
INA1  
Inverting differential clock input. VDD/2 default when left floating.  
Non-inverting differential clock input.  
10  
11  
Pulldown  
Pullup/  
Pulldown  
nINA0  
Inverting differential clock input. VDD/2 default when left floating.  
12  
13  
INA0  
VDD  
Input  
Pulldown  
Non-inverting differential clock input.  
Power supply pin.  
Power  
Select pin for QB outputs. When HIGH, selects INA1 input.  
When LOW, selects INA0 input. LVCMOS/LVTTL interface levels.  
14  
SELA  
Input  
Pulldown  
15, 16  
nQB, QB  
Output  
Differential output pair. LVDS interface levels.  
NOTE: Pullup and Pulldown refer to internal input resistors. See Table 2, Pin Characteristics, for typical values.  
Table 2. Pin Characteristics  
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
37.5  
Maximum  
Units  
k  
RPULLUP  
Input Pullup Resistor  
RPULLDOWN Input Pulldown Resistor  
37.5  
k  
Function Tables  
Table 3. Control Input Function Table  
Control Inputs  
SELA  
SELB  
Mode  
0
1
0
1
0
0
1
1
LOOP0 selected (default)  
LOOP1 selected  
Loopback mode: LOOP0  
Loopback mode: LOOP1  
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©2017 Integrated Device Technology, Inc.  
ICS854S54I-01 Datasheet  
DUAL 2:1, 1:2 DIFFERENTIAL-TO-LVDS MULTIPLEXER  
Absolute Maximum Ratings  
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.  
These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond  
those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for  
extended periods may affect product reliability.  
Item  
Rating  
Supply Voltage, VDD  
Inputs, VI  
4.6V  
-0.5V to VDD + 0.5V  
Outputs, IO  
Continuous Current  
Surge Current  
10mA  
15mA  
Package Thermal Impedance, JA  
74.7C/W (0 mps)  
-65C to 150C  
Storage Temperature, TSTG  
DC Electrical Characteristics  
Table 4A. Power Supply DC Characteristics, VDD = 2.5V ± 5%, TA = -40°C to 85°C  
Symbol Parameter  
VDD Positive Supply Voltage  
IDD Power Supply Current  
Test Conditions  
Minimum  
Typical  
Maximum  
2.625  
82  
Units  
V
2.375  
2.5  
mA  
Table 4B. LVCMOS/LVTTL DC Characteristics, VDD = 2.5V ± 5%, TA = -40°C to 85°C  
Symbol  
VIH  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
VDD + 0.3  
0.7  
Units  
V
Input High Voltage  
Input Low Voltage  
Input High Current  
Input Low Current  
1.7  
0
VIL  
V
IIH  
SELA, SELB  
SELA, SELB  
VDD = VIN = 2.625V  
150  
µA  
µA  
IIL  
VDD = 2.625V, VIN = 0V  
-150  
Table 4C. DC Characteristics, VDD = 2.5V ± 5%, TA = -40°C to 85°C  
-40°C  
25°C  
Typ  
85°C  
Typ  
Symbol Parameter  
Min  
Typ  
Max  
Min  
Max  
Min  
Max  
Units  
Input  
IIH  
INAx, INB  
nINAx, nINB  
150  
150  
150  
µA  
High Current  
INAx, INB  
-10  
-150  
0.15  
-10  
-150  
0.15  
-10  
-150  
0.15  
µA  
µA  
V
Input  
IIL  
Low Current  
nINAx, nINB  
VPP  
Peak-to-Peak Input Voltage  
1.2  
1.2  
1.2  
Common Mode Input Voltage;  
NOTE 1  
VCMR  
1.2  
VDD  
1.2  
VDD  
1.2  
VDD  
V
NOTE 1: Common mode input voltage is defined as VIH.  
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©2017 Integrated Device Technology, Inc.  
ICS854S54I-01 Datasheet  
DUAL 2:1, 1:2 DIFFERENTIAL-TO-LVDS MULTIPLEXER  
Table 4D. LVDS DC Characteristics, VDD = 2.5V ± 5%, TA = -40°C to 85°C  
-40°C  
25°C  
Typ  
350  
85°C  
Symbol Parameter  
Min  
Typ  
Max  
454  
60  
Min  
Max  
454  
60  
Min  
Typ  
Max  
454  
60  
Units  
mV  
mV  
V
VOD  
Differential Output Voltage  
247  
350  
247  
247  
350  
VOD  
VOS  
VOD Magnitude Change  
Offset Voltage  
1.125  
1.25  
1.375  
50  
1.125  
1.25  
1.375  
50  
1.125  
1.25  
1.375  
50  
VOS  
VOS Magnitude Change  
mV  
NOTE: Refer to Parameter Measurement Information, 2.5V Output Load Test Circuit diagram.  
AC Electrical Characteristics  
Table 5. AC Characteristics, VDD = 2.5V ± 5%, TA = -40°C to 85°C  
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
2.5  
Units  
GHz  
ps  
fOUT  
Output Frequency  
INAx to QB or INB to QAx  
INAx to QAx  
250  
300  
600  
tPD  
Propagation Delay; NOTE 1  
600  
ps  
tsk(pp)  
tjit  
Part-to-Part Skew; NOTE 2, 3  
300  
ps  
Buffer Additive Phase Jitter, RMS;  
refer to Additive Phase Jitter Section  
ƒOUT = 622.08MHz,  
12kHz – 20MHz  
0.031  
65  
ps  
ps  
dB  
tR / tF  
Output Rise/Fall Time  
20% to 80%  
60  
300  
ƒOUT = 500MHz output,  
VPP = 400mV  
MUX_ISOLATION MUX Isolation; NOTE 4  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device  
is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal  
equilibrium has been reached under these conditions.  
NOTE: All parameters measured at 1.7GHz unless otherwise noted.  
NOTE 1: Measured from the differential input crossing point to the differential output crossing point.  
NOTE 2: Defined as skew between outputs on different devices operating at the same supply voltage, same temperature and with equal load  
conditions. Using the same type of inputs on each device, the outputs are measured at the differential cross points.  
NOTE 3: This parameter is defined in accordance with JEDEC Standard 65.  
NOTE 4: Q, nQ output measured differentially. See MUX Isolation Diagram in Parameter Measurement Information section.  
ICS854S54I-01 July 17, 2017  
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©2017 Integrated Device Technology, Inc.  
ICS854S54I-01 Datasheet  
DUAL 2:1, 1:2 DIFFERENTIAL-TO-LVDS MULTIPLEXER  
Additive Phase Jitter  
The spectral purity in a band at a specific offset from the fundamental  
compared to the power of the fundamental is called the dBc Phase  
Noise. This value is normally expressed using a Phase noise plot  
and is most often the specified plot in many applications. Phase noise  
is defined as the ratio of the noise power present in a 1Hz band at a  
specified offset from the fundamental frequency to the power value of  
the fundamental. This ratio is expressed in decibels (dBm) or a ratio  
of the power in the 1Hz band to the power in the fundamental. When  
the required offset is specified, the phase noise is called a dBc value,  
which simply means dBm at a specified offset from the fundamental.  
By investigating jitter in the frequency domain, we get a better  
understanding of its effects on the desired application over the entire  
time record of the signal. It is mathematically possible to calculate an  
expected bit error rate given a phase noise plot.  
Additive Phase Jitter @ 622.08MHz  
12kHz to 20MHz = 0.031ps (typical)  
Offset from Carrier Frequency (Hz)  
As with most timing specifications, phase noise measurements has  
issues relating to the limitations of the equipment. Often the noise  
floor of the equipment is higher than the noise floor of the device. This  
is illustrated above. The device meets the noise floor of what is  
shown, but can actually be lower. The phase noise is dependent on  
the input source and measurement equipment.  
The source generator “IFR2042 10kHz – 56.4GHz Low Noise Signal  
Generator as external input to an Agilent 8133A 3GHz Pulse  
Generator.  
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©2017 Integrated Device Technology, Inc.  
ICS854S54I-01 Datasheet  
DUAL 2:1, 1:2 DIFFERENTIAL-TO-LVDS MULTIPLEXER  
Parameter Measurement Information  
V
DD  
nINA[0:1], nINB  
INA[0:1], INB  
GND  
VPP  
VCMR  
Cross Points  
V
DD  
LVDS Output Load AC Test Circuit  
Differential Input Level  
Spectrum of Output Signal Q  
MUX selects active  
input clock signal  
A0  
A1  
Part 1  
nQx  
Qx  
MUX_ISOL = A0 – A1  
Part 2  
nQy  
MUX selects static input  
Qy  
tsk(pp)  
ƒ
Frequency  
(fundamental)  
Part-to-Part Skew  
MUX Isolation  
nINA[0:1],  
nINB  
nQA[0:1],  
nQB  
INA[0:1],  
INB  
80%  
80%  
tR  
VOD  
20%  
nQA[0:1],  
nQB  
QA[0:1],  
QB  
20%  
QA[0:1],  
QB  
tF  
tPD  
Output Rise/Fall Time  
Propagation Delay  
ICS854S54I-01 July 17, 2017  
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©2017 Integrated Device Technology, Inc.  
ICS854S54I-01 Datasheet  
DUAL 2:1, 1:2 DIFFERENTIAL-TO-LVDS MULTIPLEXER  
Parameter Measurement Information, continued  
Offset Voltage Setup  
Differential Output Voltage Setup  
ICS854S54I-01 July 17, 2017  
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©2017 Integrated Device Technology, Inc.  
ICS854S54I-01 Datasheet  
DUAL 2:1, 1:2 DIFFERENTIAL-TO-LVDS MULTIPLEXER  
Application Information  
Wiring the Differential Input to Accept Single-Ended Levels  
Figure 1 shows how a differential input can be wired to accept single  
ended levels. The reference voltage VREF = VDD/2 is generated by  
the bias resistors R1 and R2. The bypass capacitor (C1) is used to  
help filter noise on the DC bias. This bias circuit should be located as  
close to the input pin as possible. The ratio of R1 and R2 might need  
to be adjusted to position the VREF in the center of the input voltage  
swing. For example, if the input clock swing is 2.5V and VDD = 3.3V,  
R1 and R2 value should be adjusted to set VREF at 1.25V. The values  
below are for when both the single ended swing and VDD are at the  
same voltage. This configuration requires that the sum of the output  
impedance of the driver (Ro) and the series resistance (Rs) equals  
the transmission line impedance. In addition, matched termination at  
the input will attenuate the signal in half. This can be done in one of  
two ways. First, R3 and R4 in parallel should equal the transmission  
line impedance. For most 50applications, R3 and R4 can be 100.  
The values of the resistors can be increased to reduce the loading for  
slower and weaker LVCMOS driver. When using single-ended  
signaling, the noise rejection benefits of differential signaling are  
reduced. Even though the differential input can handle full rail  
LVCMOS signaling, it is recommended that the amplitude be  
reduced. The datasheet specifies a lower differential amplitude,  
however this only applies to differential signals. For single-ended  
applications, the swing can be larger, however VIL cannot be less  
than -0.3V and VIH cannot be more than VDD + 0.3V. Though some  
of the recommended components might not be used, the pads should  
be placed in the layout. They can be utilized for debugging purposes.  
The datasheet specifications are characterized and guaranteed by  
using a differential signal.  
Figure 1. Recommended Schematic for Wiring a Differential Input to Accept Single-ended Levels  
Recommendations for Unused Input and Output Pins  
Inputs:  
Outputs:  
IN/nIN Inputs  
LVDS Outputs  
For applications not requiring the use of the differential input, both INx  
and nINx can be left floating. Though not required, but for additional  
protection, a 1kresistor can be tied from INx to ground.  
All unused LVDS output pairs can be either left floating or terminated  
with 100across. If they are left floating, we recommend that there  
is no trace attached.  
LVCMOS Control Pins  
All control pins have internal pulldowns; additional resistance is not  
required but can be added for additional protection. A 1kresistor  
can be used.  
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©2017 Integrated Device Technology, Inc.  
ICS854S54I-01 Datasheet  
DUAL 2:1, 1:2 DIFFERENTIAL-TO-LVDS MULTIPLEXER  
Differential Clock Input Interface  
The IN /nIN accepts LVPECL, CML, LVDS and other differential  
signals. The differential signal must meet the VPP and VCMR input  
requirements. Figures 2A to 2D show interface examples for the IN  
/nIN input driven by the most common driver types. The input  
interfaces suggested here are examples only. If the driver is from  
another vendor, use their termination recommendation. Please  
consult with the vendor of the driver component to confirm the driver  
termination requirements.  
3.3V  
2.5V  
2.5V  
3.3V  
3.3V  
Zo = 50Ω  
R1  
R2  
50Ω  
50Ω  
Zo = 50Ω  
Zo = 50Ω  
IN  
IN  
R1  
100Ω  
nIN  
Zo = 50Ω  
LVPECL  
nIN  
LVPECL  
Differential  
Inputs  
Differential  
Inputs  
CML Built-In Pullup  
CML  
Figure 2A. IN/nIN Input Driven by an  
Open Collector CML Driver  
Figure 2B. IN/nIN Input Driven by a  
Built-In Pullup CML Driver  
3.3V  
2.5V  
2.5V  
3.3V  
3.3V  
R1  
R3  
Zo = 50Ω  
125Ω  
125Ω  
Zo = 50Ω  
Zo = 50Ω  
IN  
IN  
R1  
100Ω  
nIN  
nIN  
LVPECL  
Zo = 50Ω  
LVPECL  
Differential  
Inputs  
LVPECL  
Differential  
Input  
LVDS  
R2  
84Ω  
R4  
84Ω  
Figure 2C. IN/nIN Input Driven by a 3.3V LVPECL Driver  
Figure 2D. IN/nIN Input Driven by a 3.3V LVDS Driver  
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©2017 Integrated Device Technology, Inc.  
ICS854S54I-01 Datasheet  
DUAL 2:1, 1:2 DIFFERENTIAL-TO-LVDS MULTIPLEXER  
VFQFN EPAD Thermal Release Path  
In order to maximize both the removal of heat from the package and  
the electrical performance, a land pattern must be incorporated on  
the Printed Circuit Board (PCB) within the footprint of the package  
corresponding to the exposed metal pad or exposed heat slug on the  
package, as shown in Figure 3. The solderable area on the PCB, as  
defined by the solder mask, should be at least the same size/shape  
as the exposed pad/slug area on the package to maximize the  
thermal/electrical performance. Sufficient clearance should be  
designed on the PCB between the outer edges of the land pattern  
and the inner edges of pad pattern for the leads to avoid any shorts.  
and dependent upon the package power dissipation as well as  
electrical conductivity requirements. Thus, thermal and electrical  
analysis and/or testing are recommended to determine the minimum  
number needed. Maximum thermal and electrical performance is  
achieved when an array of vias is incorporated in the land pattern. It  
is recommended to use as many vias connected to ground as  
possible. It is also recommended that the via diameter should be 12  
to 13mils (0.30 to 0.33mm) with 1oz copper via barrel plating. This is  
desirable to avoid any solder wicking inside the via during the  
soldering process which may result in voids in solder between the  
exposed pad/slug and the thermal land. Precautions should be taken  
to eliminate any solder voids between the exposed heat slug and the  
land pattern. Note: These recommendations are to be used as a  
guideline only. For further information, please refer to the Application  
Note on the Surface Mount Assembly of Amkor’s Thermally/  
Electrically Enhance Leadframe Base Package, Amkor Technology.  
While the land pattern on the PCB provides a means of heat transfer  
and electrical grounding from the package to the board through a  
solder joint, thermal vias are necessary to effectively conduct from  
the surface of the PCB to the ground plane(s). The land pattern must  
be connected to ground through these vias. The vias act as “heat  
pipes”. The number of vias (i.e. “heat pipes”) are application specific  
SOLDER  
SOLDER  
PIN  
PIN  
EXPOSED HEAT SLUG  
PIN PAD  
GROUND PLANE  
LAND PATTERN  
(GROUND PAD)  
PIN PAD  
THERMAL VIA  
Figure 3. P.C. Assembly for Exposed Pad Thermal Release Path – Side View (drawing not to scale)  
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©2017 Integrated Device Technology, Inc.  
ICS854S54I-01 Datasheet  
DUAL 2:1, 1:2 DIFFERENTIAL-TO-LVDS MULTIPLEXER  
LVDS Driver Termination  
A general LVDS interface is shown in Figure 4. Standard termination  
for LVDS type output structure requires both a 100parallel resistor  
at the receiver and a 100differential transmission line environment.  
In order to avoid any transmission line reflection issues, the 100  
resistor must be placed as close to the receiver as possible. IDT  
offers a full line of LVDS compliant devices with two types of output  
structures: current source and voltage source. The standard  
termination schematic as shown in Figure 4 can be used with either  
type of output structure. If using a non-standard termination, it is  
recommended to contact IDT and confirm if the output is a current  
source or a voltage source type structure. In addition, since these  
outputs are LVDS compatible, the input receivers amplitude and  
common mode input range should be verified for compatibility with  
the output.  
+
LVDS  
Receiver  
LVDS Driver  
100Ω  
100Ω Differential Transmission Line  
Figure 4. Typical LVDS Driver Termination  
Internal  
Connector  
Host Adapter Board  
SELB  
INA0  
nINA0  
INB  
nINB  
QA0  
SerDes  
Protocol  
Controller  
nQA0  
0
QB  
nQB  
INA1  
1
nINA1  
QA1  
nQA1  
SELA  
PCI Bus  
Figure 5. Typical Application Diagram for Host Bus Adapter Boards for routing Between Internal and External  
Connectors  
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©2017 Integrated Device Technology, Inc.  
ICS854S54I-01 Datasheet  
DUAL 2:1, 1:2 DIFFERENTIAL-TO-LVDS MULTIPLEXER  
SELB  
LOOP 0  
INA0  
nINA0  
QA0  
INB  
TX  
0
1
nINB  
Switch  
Fabric  
nQA0  
INA1  
0
1
SerDes  
QB  
nQB  
nINA1  
QA1  
RX  
nQA1  
#0  
SELA  
LOOP 1  
#1  
Redundant  
Switch Card  
Linecard  
Backplane  
Figure 6. Typical Application Diagram for Hot Swappable Links to Redundant Switch Fabric Cards  
ICS854S54I-01 July 17, 2017  
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©2017 Integrated Device Technology, Inc.  
ICS854S54I-01 Datasheet  
DUAL 2:1, 1:2 DIFFERENTIAL-TO-LVDS MULTIPLEXER  
Power Considerations  
This section provides information on power dissipation and junction temperature for the ICS854S54I-01.  
Equations and example calculations are also provided.  
1. Power Dissipation.  
The total power dissipation for the ICS854S54I-01 is the sum of the core power plus the power dissipation in the load(s).  
The following is the power dissipation for VDD = 2.5V + 5% = 2.625V, which gives worst case results.  
NOTE: Please refer to Section 3 for details on calculating power dissipation in the load.  
Power (core)MAX = VDD_MAX * IDD_MAX = 2.625V * 82mA = 214.5mW  
2. Junction Temperature.  
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad, and directly affects the reliability of the device. The  
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond  
wire and bond pad temperature remains below 125°C.  
The equation for Tj is as follows: Tj = JA * Pd_total + TA  
Tj = Junction Temperature  
JA = Junction-to-Ambient Thermal Resistance  
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)  
TA = Ambient Temperature  
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance JA must be used. Assuming no air flow and  
a multi-layer board, the appropriate value is 74.7°C/W per Table 6 below.  
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:  
85°C + 0.215W * 74.7°C/W = 101.1°C. This is below the limit of 125°C.  
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of  
board (multi-layer).  
Table 6. Thermal Resistance JA for 16 Lead VFQFN, Forced Convection  
JA by Velocity  
Meters per Second  
0
1
2.5  
Multi-Layer PCB, JEDEC Standard Test Boards  
74.7°C/W  
65.3°C/W  
58.5°C/W  
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©2017 Integrated Device Technology, Inc.  
ICS854S54I-01 Datasheet  
DUAL 2:1, 1:2 DIFFERENTIAL-TO-LVDS MULTIPLEXER  
Reliability Information  
Table 7. JA vs. Air Flow Table for a 16 Lead VFQFN  
JA by Velocity  
Meters per Second  
0
1
2.5  
Multi-Layer PCB, JEDEC Standard Test Boards  
74.7°C/W  
65.3°C/W  
58.5°C/W  
Transistor Count  
The transistor count for ICS854S54I-01 is: 329  
This device is pin and function compatible and a suggested replacement for ICS85454-01.  
ICS854S54I-01 July 17, 2017  
14  
©2017 Integrated Device Technology, Inc.  
ICS854S54I-01 Datasheet  
DUAL 2:1, 1:2 DIFFERENTIAL-TO-LVDS MULTIPLEXER  
Package Outline Drawings  
Package Outline Drawings – Sheet 1  
ICS854S54I-01 July 17, 2017  
15  
©2017 Integrated Device Technology, Inc.  
ICS854S54I-01 Datasheet  
DUAL 2:1, 1:2 DIFFERENTIAL-TO-LVDS MULTIPLEXER  
Package Outline Drawings – Sheet 2  
ICS854S54I-01 July 17, 2017  
16  
©2017 Integrated Device Technology, Inc.  
ICS854S54I-01 Datasheet  
DUAL 2:1, 1:2 DIFFERENTIAL-TO-LVDS MULTIPLEXER  
Ordering Information  
Table 9. Ordering Information  
Part/Order Number  
854S54AKI-01LF  
854S54AKI-01LFT  
Marking  
4A01  
4A01  
Package  
“Lead-Free” 16 Lead VFQFN  
“Lead-Free” 16 Lead VFQFN  
Shipping Packaging  
Tube  
2500 Tape & Reel  
Temperature  
-40C to 85C  
-40C to 85C  
NOTE: Parts that are ordered with an “LF” suffix to the part number are the Pb-Free configuration and are RoHS compliant.  
Revision History  
Revision Date  
July 17, 2017  
Description of Change  
Updated the Package Outline Drawings. No technical changes.  
Initial release.  
March 29, 2010  
Corporate Headquarters  
6024 Silver Creek Valley Road  
San Jose, CA 95138 USA  
www.IDT.com  
Sales  
Tech Support  
www.IDT.com/go/support  
1-800-345-7015 or 408-284-8200  
Fax: 408-284-2775  
www.IDT.com/go/sales  
DISCLAIMER Integrated Device Technology, Inc. (IDT) and its affiliated companies (herein referred to as “IDT”) reserve the right to modify the products and/or specifications described herein at any time,  
without notice, at IDT’s sole discretion. Performance specifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same  
way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability  
of IDT's products for any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not  
convey any license under intellectual property rights of IDT or any third parties.  
IDT's products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be rea-  
sonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT.  
Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are the property  
of IDT or their respective third party owners. For datasheet type definitions and a glossary of common terms, visit www.idt.com/go/glossary. Integrated Device Technology, Inc.. All rights reserved.  
© Integrated Device Technology, Inc.  
17  

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