853S54I-01 [IDT]

Dual 2:1, 1:2 Differential-to-LVPECL/ ECL Multiplexer;
853S54I-01
型号: 853S54I-01
厂家: INTEGRATED DEVICE TECHNOLOGY    INTEGRATED DEVICE TECHNOLOGY
描述:

Dual 2:1, 1:2 Differential-to-LVPECL/ ECL Multiplexer

文件: 总20页 (文件大小:334K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Dual 2:1, 1:2 Differential-to-LVPECL/  
ECL Multiplexer  
853S54I-01  
Datasheet  
General Description  
Features  
The 853S54I-01 is a 2:1/1:2 Multiplexer. The 2:1 Multiplexer  
allows one of 2 inputs to be selected onto one output pin and the  
1:2 MUX switches one input to one of two outputs. This device  
may be useful for multiplexing multi-rate Ethernet PHYs which  
have 100Mbit and 1000Mbit transmit/receive pairs onto an optical  
SFP module which has a single transmit/receive pair. A 3RD mode  
allows loop back testing and allows the output of a PHY transmit  
pair to be routed to the PHY input pair. For examples, please refer  
to the Application Block diagrams on pages 2-3 of the data sheet.  
Dual 2:1, 1:2 MUX  
Three LVPECL output pairs  
Three differential clock inputs can accept: LVPECL, LVDS, CML  
Loopback test mode available  
Maximum output frequency: 2.5GHz  
Propagation delay: 550ps (maximum)  
Part-to-part skew: 275ps (maximum)  
The 853S54I-01 is optimized for applications requiring very high  
performance and has a maximum operating frequency in 2.5GHz.  
The device is packaged in a small, 3mm x 3mm VFQFN package,  
making it ideal for use on space-constrained boards.  
Additive phase jitter, RMS: 27fs (typical)  
LVPECL mode operating voltage supply range:  
V
CC = 2.375V to 3.465V, VEE = 0V  
ECL mode operating voltage supply range:  
CC = 0V, VEE = -3.465V to -2.375V  
V
-40°C to 85°C ambient operating temperature  
Available in lead-free (RoHS 6) package  
Pin Assignment  
Block Diagram  
SELB  
16 15 14 13  
1
2
3
12  
QA0  
nQA0  
QA1  
INA0  
Pulldown  
11  
10  
nINA0  
INA1  
INA0  
Pullup/Pulldown  
nINA0  
nQA1  
4
nINA1  
9
5
6
7
8
Pulldown  
INB  
LOOP 0  
0
Pullup/Pulldown  
nINB  
QA0  
nQA0  
853S54I-01  
1
16-Lead VFQFN  
0
QB  
3mm x 3mm x 0.925mm  
package body  
K Package  
Pulldown  
INA1  
nQB  
1
Pullup/Pulldown  
nINA1  
Top View  
LOOP 1  
QA1  
nQA1  
SELA  
©2017 Integrated Device Technology, Inc.  
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March 2, 2017  
853S54I-01 Datasheet  
Table 1. Pin Descriptions  
Number  
1, 2  
Name  
QA0, nQA0  
QA1, nQA1  
INB  
Type  
Description  
Output  
Output  
Input  
Differential output pair. LVPECL/ECL interface levels.  
Differential output pair. LVPECL/ECL interface levels.  
3, 4  
5
Pulldown Non-inverting LVPECL/ECL differential clock input.  
Pullup/  
Pulldown  
6
nINB  
Input  
Inverting LVPECL differential clock input. VCC/2 default when left floating.  
7
8
SELB  
VEE  
Input  
Pulldown Select pin for QB output. See Table 3. LVCMOS/LVTTL interface levels.  
Negative supply pin.  
Power  
Pullup/  
9
nINA1  
INA1  
Input  
Input  
Input  
Inverting differential LVPECL clock input. VCC/2 default when left floating.  
Pulldown  
10  
11  
Pulldown Non-inverting differential LVPECL clock input.  
Pullup/  
nINA0  
Inverting differential LVPECL clock input. VCC/2 default when left floating.  
Pulldown  
12  
13  
INA0  
VCC  
Input  
Power  
Input  
Pulldown Non-inverting differential clock input.  
Power supply pin.  
14  
SELA  
Pulldown Select pin for QAx outputs. See Table 3. LVCMOS/LVTTL interface levels.  
Differential output pair. LVPECL/ECL interface levels.  
15, 16  
nQB, QB  
Output  
NOTE: Pullup and Pulldown refer to internal input resistors. See Table 2, Pin Characteristics, for typical values.  
Table 2. Pin Characteristics  
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
37.5  
Maximum  
Units  
k  
RPULLUP  
Input Pullup Resistor  
RPULLDOWN Input Pulldown Resistor  
37.5  
k  
Function Tables  
Table 3. Control Input Function Table  
Control Inputs  
SELA  
SELB  
Mode  
0
1
0
1
0
0
1
1
LOOP 0 selected  
LOOP 1 selected  
Loopback mode: LOOP 0  
Loopback mode: LOOP 1  
©2017 Integrated Device Technology, Inc.  
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March 2, 2017  
853S54I-01 Datasheet  
Absolute Maximum Ratings  
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.  
These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond  
those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for  
extended periods may affect product reliability.  
Item  
Rating  
Supply Voltage, VCC  
Negative Supply Voltage, VEE  
Inputs, VI (LVPECL mode)  
Inputs, VI (ECL mode)  
4.6V (LVPECL mode, VEE = 0V)  
-4.6V (ECL mode, VCC = 0V)  
-0.5V to VCC + 0.5V  
0.5V to VEE – 0.5V  
Outputs, IO  
Continuous Current  
Surge Current  
50mA  
100mA  
Operating Temperature Range, TA  
-40°C to +85°C  
74.7C/W (0 mps)  
-65C to 150C  
Package Thermal Impedance, JA, (Junction-to-Ambient)  
Storage Temperature, TSTG  
DC Electrical Characteristics  
Table 4A. Power Supply DC Characteristics, V = 2.375V TO 3.465V, V = 0V OR V = 0V, V = -3.465V TO -2.375V,  
CC  
EE  
CC  
EE  
T = -40°C to 85°C  
A
Symbol Parameter  
Test Conditions  
Minimum  
3.135  
Typical  
Maximum  
3.465  
2.625  
45  
Units  
V
3.3  
2.5  
VCC  
IEE  
Positive Supply Voltage  
Power Supply Current  
2.375  
V
mA  
Table 4B. LVCMOS/LVTTL DC Characteristics, V = 2.375V TO 3.465V, V = 0V OR V = 0V, V = -3.465V TO  
CC  
EE  
CC  
EE  
-2.375V,  
T = 40°C to 85°C  
A
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
V
VCC = 3.465V  
VCC = 2.625V  
2.2  
1.7  
0
VCC + 0.3  
VCC + 0.3  
0.8  
VIH  
Input High Voltage  
Input Low Voltage  
V
V
CC = 3.465V  
CC = 2.625V  
V
VIL  
V
0
0.7  
V
IIH  
IIL  
Input High Current  
Input Low Current  
SELA, SELB  
SELA, SELB  
VCC = VIN = 3.465V or 2.625V  
VCC = 2.625V, VIN = 0V  
150  
µA  
µA  
-150  
©2017 Integrated Device Technology, Inc.  
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March 2, 2017  
853S54I-01 Datasheet  
Table 4C. LVPECL DC Characteristics, V = 3.3V, V = 0V, T = -40°C to 85°C  
CC  
EE  
A
-40°C  
Typ  
25°C  
Typ  
85°C  
Typ  
Symbol Parameter  
Min  
Max  
-0.87  
Min  
-1.07  
Max  
-0.8  
Min  
-1.01  
Max  
-0.8  
Units  
Output  
V
-1.02  
V
V
V
V
V
V
-1.00  
V
V
V
V
V
-0.9  
V
V
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
V
V
V
V
High Voltage;  
NOTE 1  
V
V
-1.125  
-1.895  
V
OH  
OL  
CC  
5
5
5
5
80  
5
7
85  
Output  
Low Voltage;  
NOTE 1  
V
-1.75  
-1.87  
-1.6  
V
-1.7  
-1.6  
CC  
7
CC  
CC  
CC  
CC  
-1.62  
-1.78  
-1.86  
CC  
V
mV  
V
CC  
CC  
CC  
5
5
85  
65  
Peak-to-Peak  
Input Voltage;  
NOTE 2  
150  
1.2  
800  
1200  
150  
800  
1200  
150  
800  
1200  
PP  
Common Mode  
Input Voltage;  
NOTE 1  
V
1.2  
V
1.2  
V
CC  
CMR  
CC  
CC  
INAx,  
Input  
INB  
nINA,  
nINB  
I
I
High  
Current  
150  
150  
150  
µA  
IH  
INAx,  
INB  
-10  
-10  
-10  
µA  
µA  
Input  
Low  
Current  
IL  
nINA,  
nINB  
-150  
-150  
-150  
NOTE: Input and output parameters vary 1:1 with VCC. VCC can vary +0.165V to -0.925V.  
NOTE 1: Common mode voltage is defined as VIH.  
NOTE 2: For single-ended applications, the maximum input voltage for INAx, nINAx and INB, nINB is VCC + 0.3V.  
©2017 Integrated Device Technology, Inc.  
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March 2, 2017  
853S54I-01 Datasheet  
Table 4D. ECL DC Characteristics, V = -3.465V to -2.375V, V = 0V, T = -40°C to 85°C  
EE  
CC  
A
-40°C  
25°C  
Typ  
85°C  
Typ  
Symbol Parameter  
Min  
Typ  
Max  
Min  
Max  
Min  
Max  
Units  
Output  
V
V
V
V
High Voltage;  
NOTE 1  
-1.125  
-1.025  
-0.0875  
-1.075  
-1.005  
-1.78  
800  
-0.880  
-1.015  
-0.97  
-1.765  
800  
-0.885  
V
OH  
OL  
Output  
Low Voltage;  
NOTE 1  
-1.895  
150  
-1.755  
800  
-1.62  
1200  
-1.875  
150  
-1.685  
1200  
-1.86  
150  
-1.67  
1200  
V
mV  
V
Peak-to-Peak  
Input Voltage;  
NOTE 2  
PP  
Common Mode  
Input Voltage;  
NOTE 1  
V
+
EE  
V
V
+ 1.2  
V
V
+ 1.2  
V
CC  
CMR  
CC  
EE  
CC  
EE  
1.2  
INAx,  
INB  
nINA,  
nINB  
Input  
High  
Current  
I
I
150  
150  
150  
µA  
IH  
INAx,  
INB  
-10  
-10  
-10  
µA  
µA  
Input  
Low  
Current  
IL  
nINA,  
nINB  
-150  
-150  
-150  
NOTE: Input and output parameters vary 1:1 with VCC.  
NOTE 1: Common mode voltage is defined as VIH.  
NOTE 2: For single-ended applications, the maximum input voltage for INAx, nINAx and INB, nINB is VCC + 0.3V.  
©2017 Integrated Device Technology, Inc.  
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March 2, 2017  
853S54I-01 Datasheet  
AC Electrical Characteristics  
Table 5. AC Characteristics, V = 2.375V TO 3.465V, V = 0V, T = -40°C to 85°C  
CC  
EE  
A
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
2.5  
Units  
GHz  
ps  
fOUT  
Output Frequency  
INAx to QB  
INB to QAx  
INAx to QAx  
225  
200  
250  
525  
tPD  
Propagation Delay; NOTE 1  
475  
ps  
550  
ps  
tsk(pp)  
tjit  
Part-to-Part Skew; NOTE 2, 3  
275  
ps  
Buffer Additive Phase Jitter,  
RMS; refer to Additive Phase  
Jitter Section  
ƒ = 622.08MHz,  
12kHz – 20MHz  
27  
61  
fs  
tR / tF  
Output Rise/Fall Time  
20% to 80%  
50  
325  
ps  
ƒ = 622.08MHz;  
Input Peak-to-Peak = 800mV  
MUX_ISOLATION MUX Isolation; NOTE 4  
dB  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the  
device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after  
thermal equilibrium has been reached under these conditions.  
NOTE: All parameters measured at 1.3GHz unless otherwise noted.  
NOTE 1: Measured from the differential input crossing point to the differential output crossing point.  
NOTE 2: Defined as skew between outputs on different devices operating at the same supply voltage, same temperature, same  
frequency and with equal load conditions. Using the same type of inputs on each device, the outputs are measured at the differential  
cross points.  
NOTE 3: This parameter is defined in accordance with JEDEC Standard 65.  
NOTE 4: Q, nQ output measured differentially. See MUX Isolation Diagram in Parameter Measurement Information section.  
©2017 Integrated Device Technology, Inc.  
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March 2, 2017  
853S54I-01 Datasheet  
Additive Phase Jitter  
The spectral purity in a band at a specific offset from the  
to the power in the fundamental. When the required offset is  
specified, the phase noise is called a dBc value, which simply  
means dBm at a specified offset from the fundamental. By  
investigating jitter in the frequency domain, we get a better  
understanding of its effects on the desired application over the  
entire time record of the signal. It is mathematically possible to  
calculate an expected bit error rate given a phase noise plot.  
fundamental compared to the power of the fundamental is called  
the dBc Phase Noise. This value is normally expressed using a  
Phase noise plot and is most often the specified plot in many  
applications. Phase noise is defined as the ratio of the noise power  
present in a 1Hz band at a specified offset from the fundamental  
frequency to the power value of the fundamental. This ratio is  
expressed in decibels (dBm) or a ratio of the power in the 1Hz band  
Additive Phase Jitter @ 622.08MHz  
12kHz to 20MHz = 27fs (typical)  
Offset from Carrier Frequency (Hz)  
As with most timing specifications, phase noise measurements  
have issues relating to the limitations of the equipment. Often the  
noise floor of the equipment is higher than the noise floor of the  
device. This is illustrated above. The device meets the noise floor  
of what is shown, but can actually be lower. The phase noise is  
dependent on the input source and measurement equipment.  
Rohde & Schwarz SMA100A Signal Generator 9kHz – 6GHz as  
external input to Agilent 8133A 3GHz Pulse Generator.  
©2017 Integrated Device Technology, Inc.  
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March 2, 2017  
853S54I-01 Datasheet  
Parameter Measurement Information  
2V  
V
CC  
SCOPE  
nINA[0:1], nINB  
INA[0:1], nINB  
V
Qx  
CC  
VPP  
VCMR  
Cross Points  
nQx  
V
EE  
VEE  
-0.375V to -1.465V  
LVPECL Output Load AC Test Circuit  
Differential Input Level  
Spectrum of Output Signal Q  
MUX selects active  
input clock signal  
A0  
A1  
Part 1  
nQx  
Qx  
MUX_ISOL = A0 – A1  
Part 2  
nQy  
MUX selects static input  
Qy  
tsk(pp)  
ƒ
Frequency  
(fundamental)  
Part-to-Part Skew  
MUX Isolation  
nINA[0:1],  
nINB  
nQA[0:1],  
nQB  
INA[0:1],  
INB  
nQA[0:1],  
nQB  
QA[0:1],  
QB  
QA[0:1],  
QB  
tPD  
Output Rise/Fall Time  
Propagation Delay  
©2017 Integrated Device Technology, Inc.  
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March 2, 2017  
853S54I-01 Datasheet  
Applications Information  
Wiring the Differential Input to Accept Single-Ended Levels  
Figure 1 shows how a differential input can be wired to accept  
single ended levels. The reference voltage VREF = VCC/2 is  
generated by the bias resistors R1 and R2. The bypass capacitor  
(C1) is used to help filter noise on the DC bias. This bias circuit  
should be located as close to the input pin as possible. The ratio of  
R1 and R2 might need to be adjusted to position the VREF in the  
center of the input voltage swing. For example, if the input clock  
swing is 2.5V and VCC = 3.3V, R1 and R2 value should be adjusted  
to set VREF at 1.25V. The values below are for when both the single  
ended swing and VCC are at the same voltage. This configuration  
requires that the sum of the output impedance of the driver (Ro)  
and the series resistance (Rs) equals the transmission line  
impedance. In addition, matched termination at the input will  
attenuate the signal in half. This can be done in one of two ways.  
First, R3 and R4 in parallel should equal the transmission line  
impedance. For most 50applications, R3 and R4 can be 100.  
The values of the resistors can be increased to reduce the loading  
for slower and weaker LVCMOS driver. When using single-ended  
signaling, the noise rejection benefits of differential signaling are  
reduced. Even though the differential input can handle full rail  
LVCMOS signaling, it is recommended that the amplitude be  
reduced. The datasheet specifies a lower differential amplitude,  
however this only applies to differential signals. For single-ended  
applications, the swing can be larger, however VIL cannot be less  
than -0.3V and VIH cannot be more than VCC + 0.3V. Though some  
of the recommended components might not be used, the pads  
should be placed in the layout. They can be utilized for debugging  
purposes. The datasheet specifications are characterized and  
guaranteed by using a differential signal.  
Figure 1. Recommended Schematic for Wiring a Differential Input to Accept Single-ended Levels  
Recommendations for Unused Input and Output Pins  
Inputs:  
Outputs:  
IN/nIN Inputs  
LVPECL Outputs  
For applications not requiring the use of the differential input, both  
INx and nINx can be left floating. Though not required, but for  
additional protection, a 1kresistor can be tied from INx to ground.  
All unused LVPECL outputs can be left floating. We recommend  
that there is no trace attached. Both sides of the differential output  
pair should either be left floating or terminated.  
LVCMOS Control Pins  
All control pins have internal pulldowns; additional resistance is not  
required but can be added for additional protection. A 1kresistor  
can be used.  
©2017 Integrated Device Technology, Inc.  
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March 2, 2017  
853S54I-01 Datasheet  
3.3V Differential Clock Input Interface  
The IN /nIN accepts LVPECL, CML, LVDS and other differential  
signals. Both VSWING and VOH must meet the VPP and VCMR input  
requirements. Figures 2A to 2D show interface examples for the IN  
/nIN input driven by the most common driver types. The input  
interfaces suggested here are examples only. If the driver is from  
another vendor, use their termination recommendation. Please  
consult with the vendor of the driver component to confirm the  
driver termination requirements.  
3.3V  
3.3V  
3.3V  
3.3V  
3.3V  
Zo = 50Ω  
R1  
50  
R2  
50  
Zo = 50Ω  
Zo = 50Ω  
IN  
IN  
R1  
100  
nIN  
Zo = 50Ω  
LVPECL  
nIN  
LVPECL  
Differential  
Inputs  
Differential  
Inputs  
CML Built-In Pullup  
CML  
Figure 2A. IN/nIN Input  
Figure 2B. IN/nIN Input  
Driven by an Open Collector CML Driver  
Driven by a Built-In Pullup CML Driver  
3.3V  
3.3V  
3.3V  
3.3V  
R1  
125  
R3  
125  
3.3V  
Zo = 50Ω  
Zo = 50Ω  
Zo = 50Ω  
IN  
IN  
R1  
100  
nIN  
nIN  
LVPECL  
Differential  
Input  
Zo = 50Ω  
LVPECL  
Differential  
Inputs  
LVPECL  
LVDS  
R2  
84  
R4  
84  
Figure 2C. IN/nIN Input  
Driven by a 3.3V LVPECL Driver  
Figure 2D. IN/nIN Input Driven by  
a 3.3V LVDS Driver  
©2017 Integrated Device Technology, Inc.  
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March 2, 2017  
853S54I-01 Datasheet  
2.5V Differential Clock Input Interface  
The IN /nIN accepts LVPECL, CML, LVDS and other differential  
signals. Both VSWING and VOH must meet the VPP and VCMR input  
requirements. Figures 3A to 3D show interface examples for the IN  
/nIN input driven by the most common driver types. The input  
interfaces suggested here are examples only. If the driver is from  
another vendor, use their termination recommendation. Please  
consult with the vendor of the driver component to confirm the  
driver termination requirements.  
3.3V  
2.5V  
2.5V  
3.3V  
3.3V  
Zo = 50Ω  
R1  
R2  
50Ω  
50Ω  
Zo = 50Ω  
Zo = 50Ω  
IN  
IN  
R1  
100Ω  
nIN  
Zo = 50Ω  
LVPECL  
nIN  
LVPECL  
Differential  
Inputs  
Differential  
Inputs  
CML Built-In Pullup  
CML  
Figure 3A. IN/nIN Input  
Figure 3B. IN/nIN Input  
Driven by an Open Collector CML Driver  
Driven by a Built-In Pullup CML Driver  
3.3V  
2.5V  
2.5V  
3.3V  
R1  
125Ω  
R3  
125Ω  
3.3V  
Zo = 50Ω  
Zo = 50Ω  
Zo = 50Ω  
IN  
IN  
R1  
100Ω  
nIN  
nIN  
LVPECL  
Differential  
Input  
Zo = 50Ω  
LVPECL  
Differential  
Inputs  
LVPECL  
LVDS  
R2  
84Ω  
R4  
84Ω  
Figure 3C. IN/nIN Input  
Figure 3D. IN/nIN Input Driven by  
a 3.3V LVDS Driver  
Driven by a 3.3V LVPECL Driver  
©2017 Integrated Device Technology, Inc.  
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March 2, 2017  
853S54I-01 Datasheet  
VFQFN EPAD Thermal Release Path  
In order to maximize both the removal of heat from the package  
and the electrical performance, a land pattern must be  
application specific and dependent upon the package power  
dissipation as well as electrical conductivity requirements. Thus,  
thermal and electrical analysis and/or testing are recommended to  
determine the minimum number needed. Maximum thermal and  
electrical performance is achieved when an array of vias is  
incorporated in the land pattern. It is recommended to use as many  
vias connected to ground as possible. It is also recommended that  
the via diameter should be 12 to 13mils (0.30 to 0.33mm) with 1oz  
copper via barrel plating. This is desirable to avoid any solder  
wicking inside the via during the soldering process which may  
result in voids in solder between the exposed pad/slug and the  
thermal land. Precautions should be taken to eliminate any solder  
voids between the exposed heat slug and the land pattern. Note:  
These recommendations are to be used as a guideline only. For  
further information, please refer to the Application Note on the  
Surface Mount Assembly of Amkor’s Thermally/ Electrically  
Enhance Leadframe Base Package, Amkor Technology.  
incorporated on the Printed Circuit Board (PCB) within the footprint  
of the package corresponding to the exposed metal pad or  
exposed heat slug on the package, as shown in Figure 4. The  
solderable area on the PCB, as defined by the solder mask, should  
be at least the same size/shape as the exposed pad/slug area on  
the package to maximize the thermal/electrical performance.  
Sufficient clearance should be designed on the PCB between the  
outer edges of the land pattern and the inner edges of pad pattern  
for the leads to avoid any shorts.  
While the land pattern on the PCB provides a means of heat  
transfer and electrical grounding from the package to the board  
through a solder joint, thermal vias are necessary to effectively  
conduct from the surface of the PCB to the ground plane(s). The  
land pattern must be connected to ground through these vias. The  
vias act as “heat pipes”. The number of vias (i.e. “heat pipes”) are  
SOLDER  
PIN  
SOLDER  
EXPOSED HEAT SLUG  
PIN  
PIN PAD  
GROUND PLANE  
LAND PATTERN  
(GROUND PAD)  
PIN PAD  
THERMAL VIA  
Figure 4. P.C. Assembly for Exposed Pad Thermal Release Path – Side View (drawing not to scale)  
©2017 Integrated Device Technology, Inc.  
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853S54I-01 Datasheet  
Termination for 3.3V LVPECL Outputs  
The clock layout topology shown below is a typical termination for  
LVPECL outputs. The two different layouts mentioned are  
recommended only as guidelines.  
transmission lines. Matched impedance techniques should be  
used to maximize operating frequency and minimize signal  
distortion. Figures 5A and 5B show two different layouts which are  
recommended only as guidelines. Other suitable clock layouts may  
exist and it would be recommended that the board designers  
simulate to guarantee compatibility across all printed circuit and  
clock component process variations.  
The differential outputs are low impedance follower outputs that  
generate ECL/LVPECLcompatible outputs. Therefore, terminating  
resistors (DC current path to ground) or current sources must be  
used for functionality. These outputs are designed to drive 50  
3.3V  
R3  
R4  
125  
125  
3.3V  
3.3V  
Zo = 50  
+
_
Input  
Zo = 50  
R1  
84  
R2  
84  
Figure 5A. 3.3V LVPECL Output Termination  
Figure 5B. 3.3V LVPECL Output Termination  
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853S54I-01 Datasheet  
Termination for 2.5V LVPECL Outputs  
Figure 6A and Figure 6B show examples of termination for 2.5V  
LVPECL driver. These terminations are equivalent to terminating  
50to VCC – 2V. For VCC = 2.5V, the VCC – 2V is very close to  
ground level. The R3 in Figure 6B can be eliminated and the  
termination is shown in Figure 6C.  
2.5V  
VCC = 2.5V  
2.5V  
2.5V  
VCC = 2.5V  
R1  
250Ω  
R3  
250Ω  
50Ω  
+
50Ω  
50Ω  
+
50Ω  
2.5V LVPECL Driver  
R1  
R2  
50Ω  
50Ω  
2.5V LVPECL Driver  
R2  
R4  
62.5Ω  
62.5Ω  
R3  
18Ω  
Figure 6A. 2.5V LVPECL Driver Termination Example  
Figure 6B. 2.5V LVPECL Driver Termination Example  
2.5V  
VCC = 2.5V  
50Ω  
+
50Ω  
2.5V LVPECL Driver  
R1  
R2  
50Ω  
50Ω  
Figure 6C. 2.5V LVPECL Driver Termination Example  
©2017 Integrated Device Technology, Inc.  
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853S54I-01 Datasheet  
Power Considerations  
This section provides information on power dissipation and junction temperature for the 853S54I-01.  
Equations and example calculations are also provided.  
1. Power Dissipation.  
The total power dissipation for the 853S54I-01 is the sum of the core power plus the power dissipated in the load(s).  
The following is the power dissipation for VCC = 3.465V, which gives worst case results.  
NOTE: Please refer to Section 3 for details on calculating power dissipated in the load.  
Power (core)MAX = VCC_MAX * IEE_MAX = 3.465V * 45mA = 155.925mW  
Power (outputs)MAX = 30.75mW/Loaded Output pair  
If all outputs are loaded, the total power is 3 * 30.75mW = 92.25mW  
Total Power_MAX (3.8V, with all outputs switching) = 155.925mW + 92.25mW = 248.175mW  
2. Junction Temperature.  
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad directly affects the reliability of the device. The  
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the  
bond wire and bond pad temperature remains below 125°C.  
The equation for Tj is as follows: Tj = JA * Pd_total + TA  
Tj = Junction Temperature  
JA = Junction-to-Ambient Thermal Resistance  
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)  
TA = Ambient Temperature  
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance JA must be used. Assuming no air flow  
and a multi-layer board, the appropriate value is 74.7°C/W per Table 6 below.  
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:  
85°C + 0.248W * 74.7°C/W = 103.5°C. This is below the limit of 125°C.  
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type  
of board (multi-layer).  
Table 6. Thermal Resistance JA for 16 Lead VFQFN Forced Convection  
JA by Velocity  
Meters per Second  
0
1
2.5  
Multi-Layer PCB, JEDEC Standard Test Boards  
74.7°C/W  
65.3°C/W  
58.5°C/W  
©2017 Integrated Device Technology, Inc.  
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853S54I-01 Datasheet  
3. Calculations and Equations.  
The purpose of this section is to calculate the power dissipation for the LVPECL output pair.  
LVPECL output driver circuit and termination are shown in Figure 7.  
VCC  
Q1  
VOUT  
RL  
VCC - 2V  
Figure 7. LVPECL Driver Circuit and Termination  
To calculate worst case power dissipation into the load, use the following equations which assume a 50load, and a termination voltage  
of VCC – 2V.  
For logic high, VOUT = VOH_MAX = VCC_MAX – 0.885V  
(VCC_MAX – VOH_MAX) = 0.885V  
For logic low, VOUT = VOL_MAX = VCC_MAX – 1.67V  
(VCC_MAX – VOL_MAX) = 1.67V  
Pd_H is power dissipation when the output drives high.  
Pd_L is the power dissipation when the output drives low.  
Pd_H = [(VOH_MAX – (VCC_MAX – 2V))/RL] * (VCC_MAX – VOH_MAX) = [(2V – (VCC_MAX – VOH_MAX))/RL] * (VCC_MAX – VOH_MAX) =  
[(2V – 0.885V)/50] * 0.885V = 19.73mW  
Pd_L = [(VOL_MAX – (VCC_MAX – 2V))/RL] * (VCC_MAX – VOL_MAX) = [(2V – (VCC_MAX – VOL_MAX))/RL] * (VCC_MAX – VOL_MAX) =  
[(2V – 1.67V)/50] * 1.67V = 11.02mW  
Total Power Dissipation per output pair = Pd_H + Pd_L = 30.75mW  
©2017 Integrated Device Technology, Inc.  
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853S54I-01 Datasheet  
Reliability Information  
Table 7. JA vs. Air Flow Table for a 16 Lead VFQFN  
JA by Velocity  
Meters per Second  
0
1
2.5  
Multi-Layer PCB, JEDEC Standard Test Boards  
74.7°C/W  
65.3°C/W  
58.5°C/W  
Transistor Count  
The transistor count for 853S54I-01 is: 304  
This device is pin and function compatible and a suggested replacement for 853S54I-01.  
©2017 Integrated Device Technology, Inc.  
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853S54I-01 Datasheet  
Package Outline and Package Dimensions  
Package Outline - K Suffix for 16 Lead VFQFN  
©2017 Integrated Device Technology, Inc.  
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853S54I-01 Datasheet  
Package Outline - K Suffix for 16 Lead VFQFN, continued  
©2017 Integrated Device Technology, Inc.  
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853S54I-01 Datasheet  
Ordering Information  
Table 9. Ordering Information  
Part/Order Number  
853S54AKI-01LF  
853S54AKI-01LFT  
Marking  
Package  
Shipping Packaging  
Tube  
Temperature  
-40C to 85C  
-40C to 85C  
3A01  
3A01  
“Lead-Free” 16 Lead VFQFN  
“Lead-Free” 16 Lead VFQFN  
Tape & Reel  
Revision History Sheet  
Date  
Description of Change  
Page 2, Table 3. Control Input Function Table update.  
March 2, 2017  
Pages 18-19. Updated ICS package drawing to IDT package drawing.  
Updated datasheet format.  
Corporate Headquarters  
6024 Silver Creek Valley Road  
San Jose, CA 95138 USA  
www.IDT.com  
Sales  
Tech Support  
www.IDT.com/go/support  
1-800-345-7015 or 408-284-8200  
Fax: 408-284-2775  
www.IDT.com/go/sales  
DISCLAIMER Integrated Device Technology, Inc. (IDT) and its affiliated companies (herein referred to as “IDT”) reserve the right to modify the products and/or specifications described herein at any time,  
without notice, at IDT’s sole discretion. Performance specifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same  
way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability  
of IDT's products for any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not  
convey any license under intellectual property rights of IDT or any third parties.  
IDT's products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be rea-  
sonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT.  
Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are the property  
of IDT or their respective third party owners. For datasheet type definitions and a glossary of common terms, visit www.idt.com/go/glossary. Integrated Device Technology, Inc.. All rights reserved.  
©2017 Integrated Device Technology, Inc.  
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March 2, 2017  

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