840001AKI-34LF [IDT]

Femtoclocks Crystal-to-LVCMOS/LVTTL Frequency Synthesizer;
840001AKI-34LF
型号: 840001AKI-34LF
厂家: INTEGRATED DEVICE TECHNOLOGY    INTEGRATED DEVICE TECHNOLOGY
描述:

Femtoclocks Crystal-to-LVCMOS/LVTTL Frequency Synthesizer

文件: 总15页 (文件大小:197K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Femtoclocks™ Crystal-to-LVCMOS/LVTTL  
Frequency Synthesizer  
840001I-34  
Data Sheet  
General Description  
Features  
The 840001I-34 is a two output LVCMOS/LVTTL Synthesizer. One  
output is the LVCMOS/LVTTL main synthesized clock output (Q)  
and one output is a three-state LVCMOS/LVTTL reference clock  
(REF_OUT) output at the frequency of the crystal oscillator. The  
device can accept crystals from 15.3125MHz to 42.67MHz and  
can synthesize outputs from 81.67MHz to 213.33MHz. The  
840001I-34 is packaged in a 3mm x 3mm 16-pin VFQFN, making  
it ideal for use on space constrained boards.  
Two LVCMOS/LVTTL outputs, 22typical output impedance  
One main clock output (Q)  
One three-state reference clock output (REF_OUT)  
Crystal oscillator interface can accept crystals from  
15.3125MHz to 42.67MHz, 18pF parallel resonant crystal  
Q output frequency range: 81.67MHz to 213.33MHz  
RMS phase jitter @106.25, (637kHz – 10MHz): 0.38ps (typical)  
VCO range: 490MHz to 640MHz  
Full 3.3V and 2.5V operating supply  
-40°C to 85°C ambient operating temperature  
Available in lead-free (RoHS 6) package  
Common Application Configuration Table  
Inputs  
Output Frequency  
Crystal (MHz)  
M Divider  
VCO (MHz)  
N Divider  
(MHz)  
Application  
Serial Attached (SCSI),  
PCI Express, Processor Clock  
40  
15  
600  
6
100 (default)  
26.5625  
40  
24  
15  
24  
25  
25  
25  
32  
637.5  
600  
6
4
3
5
4
3
4
106.25  
150  
Fibre Channel  
Serial ATA (SATA), Processor Clock  
Fibre Channel 2  
Ethernet  
26.5625  
25  
637.5  
625  
212.5  
125  
25  
625  
156.25  
187.5  
155.52  
10 Gigabit Ethernet  
12 Gigabit Ethernet  
SONET  
22.5  
562.5  
622.08  
19.44  
Block Diagram  
(Pullup)  
OE  
Pin Assignment  
REF_OUT  
N-Div  
XTAL_IN  
OSC  
VCO  
00 = ÷3  
01 = ÷4  
10 = ÷5  
Phase  
Detector  
Q
490MHz - 640MHz  
16 15 14 13  
XTAL_OUT  
1
2
3
OE  
XTAL_IN  
XTAL_OUT  
M0  
12  
11  
10  
Q
11 = ÷6 (default)  
VDDO  
GND  
VDD  
M-Div  
11 = ÷15 (default)  
10 = ÷24  
4
9
5
6
7
8
01 = ÷25  
00 = ÷32  
(Pullup)  
M1  
840001-34  
(Pullup)  
M0  
16 Lead VFQFN  
(Pullup)  
N1  
3mm x 3mm x 0.925 package body  
K Package  
(Pullup)  
N0  
Top View  
©2016 Integrated Device Technology, Inc  
1
Revision A January 15, 2016  
840001I-34 Data Sheet  
Table 1. Pin Descriptions  
Number  
Name  
Type  
Description  
Output enable pin. When HIGH, REF_OUT output is enabled. When LOW,  
forces REF_OUT to Hi-Z state. See Table 3A. LVCMOS/LVTTL interface levels.  
1
OE  
Input  
Input  
Pullup  
2,  
3
XTAL_IN,  
XTAL_OUT  
Crystal oscillator interface. XTAL_IN is the input. XTAL_OUT is the output.  
4, 5  
M0, M1  
nc  
Input  
Pullup  
Pullup  
M divider inputs. LVCMOS/LVTTL interface levels. See Table 3B.  
No connect.  
6, 14, 15  
Unused  
Determines output divider value as defined in Table 3C.  
LVCMOS/LVTTL interface levels.  
7, 8  
No, N1  
Input  
9
VDD  
GND  
VDDO  
Power  
Power  
Power  
Core supply pin.  
10  
11  
Power supply ground.  
Output supply pin.  
Single-ended clock output. 22typical output impedance.  
LVCMOS/LVTTL interface levels.  
12  
Q
Output  
Single-ended three-state reference clock output. 22typical output impedance.  
LVCMOS/LVTTL interface levels.  
13  
16  
REF_OUT  
VDDA  
Output  
Power  
Analog supply pin.  
NOTE: Pullup refers to internal input resistors. See Table 2, Pin Characteristics, for typical values.  
Table 2. Pin Characteristics  
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum Units  
CIN  
Input Capacitance  
4
8
pF  
pF  
pF  
k  
V
DD, VDDO = 3.465V  
CPD  
Power Dissipation Capacitance  
Input Pullup Resistor  
VDD, VDDO = 2.625V  
6
RPULLUP  
ROUT  
51  
22  
26  
VDD, VDDO = 3.3V 5%  
14  
16  
30  
36  
Output Impedance  
VDD, VDDO = 2.5V 5%  
©2016 Integrated Device Technology, Inc  
2
Revision A January 15, 2016  
840001I-34 Data Sheet  
Table 3A. Control Input Function Table  
Control Input  
Output  
REF_OUT  
Hi-Z  
OE  
0
1
Active (default)  
Table 3B. M Divider Function Table  
Control Inputs  
M1  
0
M0  
0
Feedback Divider Ratio  
÷32  
÷25  
0
1
1
0
÷24  
1
1
÷15 (default)  
Table 3C. N Divider Function Table  
Control Inputs  
N1  
0
N0  
0
Output Divider Ratio  
÷3  
÷4  
0
1
1
0
÷5  
1
1
÷6 (default)  
©2016 Integrated Device Technology, Inc  
3
Revision A January 15, 2016  
840001I-34 Data Sheet  
Absolute Maximum Ratings  
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress  
specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC  
Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability.  
Item  
Rating  
Supply Voltage, VDD  
Inputs, VI  
4.6V  
-0.5V to VDD + 0.5V  
-0.5V to VDD + 0.5V  
76.1C/W (0 mps)  
-65C to 150C  
Outputs, VO  
Package Thermal Impedance, JA  
Storage Temperature, TSTG  
DC Electrical Characteristics  
Table 4A. Power Supply DC Characteristics, VDD = VDDO = 3.3V 5%, TA = -40°C to 85°C  
Symbol Parameter  
Test Conditions  
Minimum  
3.135  
Typical  
3.3  
Maximum  
3.465  
VDD  
Units  
V
VDD  
VDDA  
VDDO  
IDD  
Core Supply Voltage  
Analog Supply Voltage  
Output Supply Voltage  
Power Supply Current  
Analog Supply Current  
Output Supply Current  
VDD – 0.12  
3.135  
3.3  
V
3.3  
3.465  
100  
V
mA  
mA  
mA  
IDDA  
IDDO  
12  
35  
Table 4B. Power Supply DC Characteristics, VDD = VDDO = 2.5V 5%, TA = -40°C to 85°C  
Symbol Parameter  
Test Conditions  
Minimum  
2.375  
Typical  
2.5  
Maximum  
2.625  
VDD  
Units  
V
VDD  
VDDA  
VDDO  
IDD  
Core Supply Voltage  
Analog Supply Voltage  
Output Supply Voltage  
Power Supply Current  
Analog Supply Current  
Output Supply Current  
VDD – 0.12  
2.375  
3.3  
V
2.5  
2.625  
90  
V
mA  
mA  
mA  
IDDA  
IDDO  
12  
25  
©2016 Integrated Device Technology, Inc  
4
Revision A January 15, 2016  
840001I-34 Data Sheet  
Table 4C. LVCMOS/LVTTL DC Characteristics, VDD = VDDO = 3.3V 5% or 2.5V 5%, TA = -40°C to 85°C  
Symbol Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
VDD + 0.3  
VDD + 0.3  
0.8  
Units  
VDD = 3.3V  
VDD = 2.5V  
VDD = 3.3V  
2
V
V
V
V
VIH  
VIL  
Input High Voltage  
1.7  
-0.3  
-0.3  
Input Low Voltage  
VDD = 2.5V  
0.7  
Input High  
Current  
OE, M0, M1,  
N0, N1  
IIH  
IIL  
VDD = VIN = 3.465V or 2.625V  
5
µA  
µA  
Input Low  
Current  
OE, M0, M1,  
N0, N1  
VDD = VIN = 3.465V or 2.625V  
VDDO = 3.3V 5%  
-150  
2.6  
1.8  
V
V
Output High Voltage;  
NOTE 1  
VOH  
VDDO = 2.5V 5%  
Output Low Voltage; NOTE  
1
VOL  
VDDO = 3.3V 5% or 2.5V 5%  
0.5  
V
NOTE 1: Outputs terminated with 50to VDDO/2. See Parameter Measurement Information, Output Load Test Circuit  
diagrams.  
Table 5. Crystal Characteristics  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
Mode of Oscillation  
Frequency  
Fundamental  
15.3125  
42.67  
MHz  
Equivalent Series Resistance (ESR)  
Shunt Capacitance  
Drive Level  
50  
7
pF  
1
mW  
NOTE: It is not recommended to overdrive the crystal input with an external clock.  
©2016 Integrated Device Technology, Inc  
5
Revision A January 15, 2016  
840001I-34 Data Sheet  
AC Electrical Characteristics  
Table 6A. AC Characteristics, VDD = VDDO = 3.3V 5%, TA = -40°C to 85°  
Symbol Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
fOUT  
Output Frequency  
81.67  
213.33  
MHz  
100MHz, Integration Range:  
637kHz – 10MHz  
0.54  
0.38  
ps  
ps  
RMS Phase Jitter,  
Random; NOTE 1  
tjit(Ø)  
106.25MHz, Integration Range:  
637kHz – 10MHz  
tR / tF  
odc  
Output Rise/Fall Time  
Output Duty Cycle  
20% to 80%  
Q, N = 3  
200  
40  
700  
60  
ps  
%
%
%
Q, N 3  
48  
52  
REF_OUT  
48  
52  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when device is  
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. Device will meet specifications after thermal equilibrium has  
been reached under these conditions  
NOTE 1: Please refer to Phase Noise Plot.  
Table 6B. AC Characteristics, VDD = VDDO = 2.5V 5%, TA = -40°C to 85°  
Symbol Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
fOUT  
Output Frequency  
81.67  
213.33  
MHz  
100MHz, Integration Range:  
637kHz – 10MHz  
0.54  
0.38  
ps  
ps  
RMS Phase Jitter,  
Random; NOTE 1  
tjit(Ø)  
106.25MHz, Integration Range:  
637kHz – 10MHz  
tR / tF  
odc  
Output Rise/Fall Time  
Output Duty Cycle  
20% to 80%  
Q, N = 3  
300  
35  
800  
65  
ps  
%
%
%
Q, N 3  
40  
60  
REF_OUT  
45  
55  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when device is  
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. Device will meet specifications after thermal equilibrium has  
been reached under these conditions  
NOTE 1: Please refer to Phase Noise Plot.  
©2016 Integrated Device Technology, Inc  
6
Revision A January 15, 2016  
840001I-34 Data Sheet  
Typical Phase Noise at 100MHz (3.3V)  
Filter  
100MHz  
RMS Phase Jitter (Random)  
637kHz to 10MHz = 0.54ps (typical)  
Raw Phase Noise Data  
Phase Noise Result by adding  
a filter to raw data  
Offset Frequency (Hz)  
Typical Phase Noise at 106.25MHz (3.3V)  
Fibre Channel Filter  
106.25MHz  
RMS Phase Jitter (Random)  
637kHz to 10MHz = 0.38ps (typical)  
Raw Phase Noise Data  
Phase Noise Result by adding a  
Fibre Channel filter to raw data  
Offset Frequency (Hz)  
©2016 Integrated Device Technology, Inc  
7
Revision A January 15, 2016  
840001I-34 Data Sheet  
Parameter Measurement Information  
1.25V 5%  
1.65V 5%  
1.65V 5%  
1.25V 5%  
SCOPE  
V
V
SCOPE  
V
DD,  
DD,  
V
DDO  
DDO  
V
V
DDA  
Qx  
Qx  
DDA  
GND  
GND  
-1.65V 5%  
-1.25V 5%  
3.3V LVCMOS Output Load AC Test Circuit  
2.5V LVCMOS Output Load AC Test Circuit  
Phase Noise Plot  
VDDO  
Q,  
2
REF_OUT  
tPW  
Phase Noise Mask  
tPERIOD  
tPW  
x 100%  
odc =  
Offset Frequency  
f1  
f2  
tPERIOD  
RMS Jitter = Area Under the Masked Phase Noise Plot  
RMS Phase Jitter  
Output Duty Cycle/Pulse Width/Period  
80%  
tF  
80%  
tR  
20%  
20%  
Q, REF_OUT  
Output Rise/Fall Time  
©2016 Integrated Device Technology, Inc  
8
Revision A January 15, 2016  
840001I-34 Data Sheet  
Application Information  
Power Supply Filtering Technique  
To achieve optimum jitter performance, power supply isolation is  
required. The ICS40001I-34 provides separate power supplies to  
isolate any high switching noise from the outputs to the internal  
PLL. VDD, VDDA, and VDDO should be individually connected to the  
power supply plane through vias, and 0.01µF bypass capacitors  
should be used for each pin. Figure 1 illustrates this for a generic  
VDD pin and also shows that VDDA requires that an additional 10  
resistor along with a 10F bypass capacitor be connected to the  
3.3V  
VDD  
.01µF  
.01µF  
10Ω  
VDDA  
10µF  
VDDA pin.  
Figure 1. Power Supply Filtering  
Recommendations for Unused Input and Output Pins  
Inputs:  
Outputs:  
LVCMOS Control Pins  
LVCMOS Output  
All control pins have internal pull-ups; additional resistance is not  
required but can be added for additional protection. A 1k  
resistor can be used.  
All unused LVCMOS output can be left floating. There should be  
no trace attached.  
Crystal Input Interface  
The 840001I-34 has been characterized with 18pF parallel  
resonant crystals. The capacitor values, C1 and C2, shown in  
Figure 2 below were determined using a 26.5625MHz, 18pF  
parallel resonant crystal and were chosen to minimize the ppm  
error. The optimum C1 and C2 values can be slightly adjusted for  
different board layouts.  
XTAL_IN  
C1  
33pF  
X1  
18pF Parallel Crystal  
XTAL_OUT  
C2  
33pF  
Figure 2. Crystal Input Interface  
©2016 Integrated Device Technology, Inc  
9
Revision A January 15, 2016  
840001I-34 Data Sheet  
VFQFN EPAD Thermal Release Path  
In order to maximize both the removal of heat from the package  
and the electrical performance, a land pattern must be  
dissipation as well as electrical conductivity requirements. Thus,  
thermal and electrical analysis and/or testing are recommended to  
determine the minimum number needed. Maximum thermal and  
electrical performance is achieved when an array of vias is  
incorporated in the land pattern. It is recommended to use as  
many vias connected to ground as possible. It is also  
recommended that the via diameter should be 12 to 13mils (0.30  
to 0.33mm) with 1oz copper via barrel plating. This is desirable to  
avoid any solder wicking inside the via during the soldering  
process which may result in voids in solder between the exposed  
pad/slug and the thermal land. Precautions should be taken to  
eliminate any solder voids between the exposed heat slug and the  
land pattern. Note: These recommendations are to be used as a  
guideline only. For further information, please refer to the  
Application Note on the Surface Mount Assembly of Amkor’s  
Thermally/Electrically Enhance Leadframe Base Package, Amkor  
Technology.  
incorporated on the Printed Circuit Board (PCB) within the  
footprint of the package corresponding to the exposed metal pad  
or exposed heat slug on the package, as shown in Figure 4. The  
solderable area on the PCB, as defined by the solder mask,  
should be at least the same size/shape as the exposed pad/slug  
area on the package to maximize the thermal/electrical  
performance. Sufficient clearance should be designed on the PCB  
between the outer edges of the land pattern and the inner edges  
of pad pattern for the leads to avoid any shorts.  
While the land pattern on the PCB provides a means of heat  
transfer and electrical grounding from the package to the board  
through a solder joint, thermal vias are necessary to effectively  
conduct from the surface of the PCB to the ground plane(s). The  
land pattern must be connected to ground through these vias. The  
vias act as “heat pipes”. The number of vias (i.e. “heat pipes”) are  
application specific and dependent upon the package power  
SOLDER  
PIN  
SOLDER  
EXPOSED HEAT SLUG  
PIN  
PIN PAD  
GROUND PLANE  
LAND PATTERN  
(GROUND PAD)  
PIN PAD  
THERMAL VIA  
Figure 4. P.C. Assembly for Exposed Pad Thermal Release Path – Side View (drawing not to scale)  
©2016 Integrated Device Technology, Inc  
10  
Revision A January 15, 2016  
840001I-34 Data Sheet  
Reliability Information  
Table 7. JA vs. Air Flow Table for a 16 Lead VFQFN  
JA at 0 Air Flow  
Meters per Second  
0
1
2.5  
Multi-Layer PCB, JEDEC Standard Test Boards  
76.1°C/W  
66.5  
59.7  
Transistor Count  
The transistor count for 840001I-34 is: 2805  
©2016 Integrated Device Technology, Inc  
11  
Revision A January 15, 2016  
840001I-34 Data Sheet  
Package Outline and Package Dimensions  
Package Outline - K Suffix for 16 Lead VFQFN  
(Ref.)  
ND& NE  
Even  
Seating Plane  
(ND-1)x e  
(R ef.)  
A1  
Index Area  
L
A3  
E2  
e
2
N
N
(Typ.)  
If ND & NE  
are Even  
1
Anvil  
Singulation  
or  
Sawn  
Singulation  
2
(NE -1)x e  
(Re f.)  
E2  
2
Top View  
D
b
e
Thermal  
Base  
A
(Ref.)  
ND &NE  
Odd  
D2  
2
0. 08  
C
Chamfer 4x  
0.6 x 0.6 max  
OPTIONAL  
D2  
C
Table 8. Package Dimensions  
JEDEC Variation: VEED-2/-4  
All Dimensions in Millimeters  
Symbol  
Minimum  
16  
Maximum  
N
A
0.80  
1.00  
0.05  
A1  
0
A3  
0.25 Ref.  
0.18  
b
ND & NE  
D & E  
D2 & E2  
e
0.30  
4
3.00 Basic  
1.00  
1.80  
0.50  
0.50 Basic  
0.30  
L
Reference Document: JEDEC Publication 95, MO-220  
©2016 Integrated Device Technology, Inc  
12  
Revision A January 15, 2016  
840001I-34 Data Sheet  
Ordering Information  
Table 9. Ordering Information  
Part/Order Number  
840001AKI-34LF  
840001AKI-34LFT  
Marking  
AI4L  
AI4L  
Package  
“Lead-Free” 16 Lead VFQFN  
“Lead-Free” 16 Lead VFQFN  
Shipping Packaging  
Tray  
Temperature  
-40C to 85C  
-40C to 85C  
Tape & Reel  
©2016 Integrated Device Technology, Inc  
13  
Revision A January 15, 2016  
840001I-34 Data Sheet  
Revision History Sheet  
Rev  
Table  
Page Description of Change  
Date  
11  
13  
14  
Updated VFQFN EPAD Thermal Release Path section.  
A
Updated Package Drawing.  
10/27/08  
9
Ordering Information Table - corrected Temperature column.  
1
5
Deleted HiPerClockS references.  
T5  
T9  
Crystal Characteristics Table - added note.  
A
A
10/16/12  
1/15/16  
9
Deleted application note, LVCMOS to XTAL Interface.  
Deleted quantity from tape and reel. Deleted Lead-Free note.  
13  
Removed ICS from the part number where needed.  
Updated data sheet header and footer.  
©2016 Integrated Device Technology, Inc  
14  
Revision A January 15, 2016  
840001I-34 Data Sheet  
Corporate Headquarters  
6024 Silver Creek Valley Road  
San Jose, CA 95138 USA  
www.IDT.com  
Sales  
Tech Support  
www.idt.com/go/support  
1-800-345-7015 or 408-284-8200  
Fax: 408-284-2775  
www.IDT.com/go/sales  
DISCLAIMER Integrated Device Technology, Inc. (IDT) reserves the right to modify the products and/or specifications described herein at any time, without notice, at IDT's sole discretion. Performance specifications  
and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein  
is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT's products for any particular purpose, an implied warranty of merchantability,  
or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties.  
IDT's products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably  
expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT.  
Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are the property of  
IDT or their respective third party owners.  
For datasheet type definitions and a glossary of common terms, visit www.idt.com/go/glossary.  
Copyright ©2016 Integrated Device Technology, Inc. All rights reserved.  

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