IC62LV1008L-70B [ICSI]

1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM; 1一M× 8位低电压和超低功耗CMOS静态RAM
IC62LV1008L-70B
型号: IC62LV1008L-70B
厂家: INTEGRATED CIRCUIT SOLUTION INC    INTEGRATED CIRCUIT SOLUTION INC
描述:

1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
1一M× 8位低电压和超低功耗CMOS静态RAM

文件: 总11页 (文件大小:152K)
中文:  中文翻译
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IC62LV1008L  
IC62LV1008LL  
Document Title  
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM  
Revision History  
Revision No  
History  
Draft Date  
Remark  
0A  
Initial Draft  
January 3,2002  
Preliminary  
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and  
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.  
Integrated Circuit Solution Inc.  
1
LPSR015-0A 1/3/2002  
IC62LV1008L  
IC62LV1008LL  
1M x 8 LOW POWER and LOW VCC  
CMOS STATIC RAM  
Preliminary  
FEATURES  
DESCRIPTION  
The ICSI IC62LV1008L and IC62LV1008LL is a low voltage,  
1,048,576 words by 8 bits, CMOS SRAM. It is fabricated using  
ICSI's low voltage, six transistor (6T), CMOS technology. The  
device is targeted to satisfy the demands of the state-of-the-art  
technologies such as cell phones and pagers.  
• Access times of 55, 70, 100 ns  
• CMOS Low power operation:  
ICC=15mA (typical)* operation  
ISB2=2µA (typical)* standby  
• Low data retention voltage: 1.5V (min.)  
When CE1 is HIGH or CE2 is LOW (deselected), the device  
assumes a standby mode at which the power dissipation can  
be reduced down with CMOS input levels. Additionally, easy  
memory expansion is provided by using two Chip Enable  
inputs, CE1 and CE2. The active LOW Write Enable ( WE)  
controls both writing and reading of the memory.  
• Output Enable (OE) and Two Chip Enables  
(CE1, CE2) inputs for ease in applications  
• TTL compatible inputs and outputs  
• Fully static operation:  
No clock or refresh reguired  
• Single 2.7V-3.6V power supply  
• Wafer level burn in test mode  
The IC62LV1008L and IC62LV1008LL are available in know  
good die form and 48-pin 8*10mm TF-BGA.  
• Available in the know good die form and  
48-pin 8*10mm TF-BGA  
*
Typical values are measured at VCC=3.0V, TA=25°C  
FUNCTIONAL BLOCK DIAGRAM  
1024K x 8  
MEMORY ARRAY  
A0-A19  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE1  
CE2  
OE  
CONTROL  
CIRCUIT  
WE  
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors  
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.  
2
Integrated Circuit Solution Inc.  
LPSR015-0A 1/3/2001  
IC62LV1008L  
IC62LV1008LL  
PIN CONFIGURATIONS  
48-Pin 8*10mm TF-BGA (TOP View)  
1
2
3
4
5
6
A0  
A3  
A1  
A4  
A6  
A2  
CE1  
NC  
NC  
NC  
I/O  
OE  
NC  
NC  
I/O  
CE2  
NC  
A
B
C
D
E
F
A5  
I/O  
4
0
GND  
Vcc  
I/O  
5
Vcc  
A17  
A7  
A16  
A15  
1
I/O  
6
GND  
I/O  
Vcc  
A14  
2
I/O  
3
NC  
NC  
A8  
NC  
WE  
A11  
I/O  
7
A12  
A9  
NC  
A13  
A10  
NC  
G
H
A18  
A19  
PIN DESCRIPTIONS  
A0-A19  
Address Inputs  
CE1  
Chip Enable 1 Input  
Chip Enable 2 Input  
Output Enable Input  
Write Enable Input  
Data Input/Output  
No Connection  
Power  
CE2  
OE  
WE  
I/O0-I/O7  
NC  
Vcc  
GND  
Ground  
TRUTH TABLE  
Mode  
WE  
CE1  
CE2  
OE  
I/O Operation Vcc Current  
Not Selected  
X
X
H
X
X
X
X
High-Z  
ISB1, ISB2  
(POWER-DOWN)  
L
High-Z  
ISB1, ISB2  
Output Disabled  
Read  
H
H
L
L
L
L
H
H
H
H
L
High-Z  
DOUT  
DIN  
ICC  
ICC  
ICC  
Write  
X
OPERATING RANGE  
Range  
Commercial  
Ambient Temperature  
VCC  
2.7V - 3.6V  
0°C to +70°C  
Industrial  
–40°C to +85°C  
2.7V - 3.6V  
Integrated Circuit Solution Inc.  
3
LPSR015-0A 1/3/2002  
IC62LV1008L  
IC62LV1008LL  
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol Parameter  
Value  
–0.5 to Vcc + 0.5  
–0.3 to +4.0  
–40 to +85  
–65 to +150  
1
Unit  
V
VTERM  
Terminal Voltage with Respect to GND  
Vcc related to GND  
VCC  
V
TBIAS  
TSTG  
PT  
Temperature Under Bias  
Storage Temperature  
°C  
°C  
W
Power Dissipation  
Notes:  
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the  
device. This is a stress rating only and functional operation of the device at these or any other conditions above  
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect reliability.  
CAPACITANCE(1)(2)  
Symbol  
CIN  
Parameter  
Input Capacitance  
Conditions  
VIN = 0V  
Max.  
6
Unit  
pF  
COUT  
Output Capacitance  
VOUT = 0V  
8
pF  
Notes:  
1. Tested initially and after any design or process changes that may affect these parameters.  
2. Test conditions: TA = 25oC, f = 1 MHz, VCC = 3.0 V  
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)  
Symbol Parameter  
Test Conditions  
Min.  
Max.  
Unit  
VOH  
VOL  
VIH  
VIL  
ILI  
Output HIGH Voltage  
VCC = Min., IOH = –1.0 mA  
2.0  
V
Output LOW Voltage  
Input HIGH Voltage(1)  
Input LOW Voltage(2)  
Input Leakage  
VCC = Min., IOL = 2.1 mA  
0.4  
V
2.2  
–0.2  
–1  
VCC + 0.3  
V
0.4  
1
V
GND VIN VCC  
GND VOUT VCC  
µA  
µA  
ILO  
Output Leakage  
–1  
1
Notes:  
1. VIH(max.) = VCC +2.0V for pulse width less than 10 ns.  
1. VIL(min.) = –2.0V for pulse width less than 10 ns.  
4
Integrated Circuit Solution Inc.  
LPSR015-0A 1/3/2001  
IC62LV1008L  
IC62LV1008LL  
IC62LV1008L POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)  
-55  
-70  
-100  
Symbol Parameter  
Test Conditions  
Min.  
Max. Min.  
Max. Min.  
Max. Unit  
ICC  
Vcc Dynamic Operating VCC = 3.0V, CE1 = VIL,CE2=VIH  
Com.  
Ind.  
30  
35  
25  
30  
20  
25  
mA  
Supply Current  
IOUT = 0 mA, f = fMAX  
VCC = Max., f = 0  
ISB1  
TTL Standby Current  
(TTL Inputs)  
Com.  
Ind.  
0.2  
0.3  
0.2  
0.3  
0.2  
0.3  
mA  
CE1  
VIH or CE2 VIL,  
VIN = VIH or VIL,  
ISB2  
CMOS Standby  
Current (CMOS Inputs)  
VCC = Max., f = 0  
Com.  
Ind.  
35  
50  
35  
50  
35  
50  
µA  
CE1  
or CE2  
VCC – 0.2V, VIN 0.2V  
VCC – 0.2V  
0.2V,  
VIN  
Note:  
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.  
IC62LV1008LL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)  
-55  
-70  
-100  
Symbol Parameter  
Test Conditions  
Min.  
Max. Min.  
Max. Min.  
Max. Unit  
ICC  
Vcc Dynamic Operating VCC = 3.0V, CE1 = VIL,CE2=VIH  
Com.  
Ind.  
30  
35  
25  
30  
20  
25  
mA  
Supply Current  
IOUT = 0 mA, f = fMAX  
VCC = Max., f = 0  
ISB1  
TTL Standby Current  
(TTL Inputs)  
Com.  
Ind.  
0.2  
0.3  
0.2  
0.3  
0.2  
0.3  
mA  
CE1  
VIH or CE2 VIL,  
VIN = VIH or VIL,  
ISB2  
CMOS Standby  
Current (CMOS Inputs)  
VCC = Max., f = 0  
Com.  
Ind.  
20  
25  
20  
25  
20  
25  
µA  
CE1  
or CE2  
VCC – 0.2V, VIN 0.2V  
VCC – 0.2V  
0.2V,  
VIN  
Note:  
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.  
Integrated Circuit Solution Inc.  
5
LPSR015-0A 1/3/2002  
IC62LV1008L  
IC62LV1008LL  
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)  
-55  
-70  
-100  
Symbol Parameter  
Min.  
55  
10  
5
Max.  
Min.  
70  
10  
5
Max.  
Min.  
Max.  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tRC  
Read Cycle Time  
100  
15  
5
tAA  
Address Access Time  
Output Hold Time  
CE1 Access Time  
CE2 Access Time  
OE Access Time  
55  
70  
100  
tOHA  
tACE1  
tACE2  
tDOE  
55  
55  
30  
70  
70  
35  
100  
100  
50  
(2)  
tLZOE  
OE to Low-Z Output  
(2)  
tHZOE  
OE to High-Z Output  
10  
10  
0
20  
0
25  
0
30  
tLZCE1(2) CE1 to Low-Z Output  
tLZCE2(2) CE2 to Low-Z Output  
10  
10  
0
10  
10  
0
(2)  
tHZCE  
CE1 or CE2 to Low-Z Output  
20  
25  
30  
Notes:  
1. Test conditions assume signal transition times of 5 ns or less, input pulse levels of 0.4V to 2.2V and output  
loading specified in Figure 1.  
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.  
AC TEST CONDITIONS  
Parameter  
Input Pulse Level  
Input Rise and Fall Times  
Unit  
0.4V to 2.2V  
5 ns  
Input Reference Level  
Output Reference Level  
1.3V  
1.5V  
Output Load  
See Figures 1 and 2  
AC TEST LOADS  
1 TTL  
1 TTL  
OUTPUT  
OUTPUT  
100 pF  
5 pF  
Including  
jig and  
Including  
jig and  
scope  
scope  
Figure 1  
Figure 2  
6
Integrated Circuit Solution Inc.  
LPSR015-0A 1/3/2001  
IC62LV1008L  
IC62LV1008LL  
AC TEST LOADS  
READ CYCLE NO.1(1,2) (Address controlled, CE1 = OE = VIL , CE2 = VIH)  
t
RC  
ADDRESS  
t
AA  
t
OHA  
t
OHA  
DATA VALID  
DOUT  
PREVIOUS DATA VALID  
AC WAVEFORMS  
READ CYCLE NO. 2(1,3) (CE1, OE, CE2 controlled)  
t
RC  
ADDRESS  
OE  
t
AA  
t
OHA  
t
HZOE  
t
DOE  
t
LZOE  
CE1  
t
ACE1/tACE2  
CE2  
tLZCE1/  
tLZCE2  
t
HZCE  
HIGH-Z  
DOUT  
DATA VALID  
Notes:  
1. WE is HIGH for a Read Cycle.  
2. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH.  
3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions.  
Integrated Circuit Solution Inc.  
7
LPSR015-0A 1/3/2002  
IC62LV1008L  
IC62LV1008LL  
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range, Standard and Low Power)  
-55  
-70  
-100  
Min.  
Symbol Parameter  
Min.  
55  
50  
50  
50  
0
Max.  
Min.  
70  
65  
65  
65  
0
Max.  
Max  
40  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tWC  
Write Cycle Time  
100  
80  
80  
80  
0
tSCE1  
tSCE2  
tAW  
CE1 to Write End  
CE2 to Write End  
Address Setup Time to Write End  
Address Hold from Write End  
Address Setup Time  
tHA  
tSA  
0
0
0
(4)  
tPWE  
tSD  
WE Pulse Width  
45  
25  
0
55  
30  
0
80  
40  
0
Data Setup to Write End  
Data Hold from Write End  
WE LOW to High-Z Output  
WE HIGH to Low-Z Output  
tHD  
(3)  
tHZWE  
5
30  
5
30  
5
(3)  
tLZWE  
Notes:  
1. Test conditions assume signal transition times of 5 ns or less, input pulse levels of 0.4V to 2.2V and output loading specified in  
Figure 1.  
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.  
3. The internal write time is defined by the overlap of CE1 LOW , CE2 HIGH and WE LOW. All signals must be in valid states to  
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the  
rising or falling edge of the signal that terminates the Write.  
4. Tested with OE HIGH.  
AC WAVEFORMS  
WRITE CYCLE NO. 1 (WE Controlled)(1,2)  
t
WC  
ADDRESS  
CE1  
t
HA  
t
SCE1  
t
SCE2  
CE2  
t
AW  
t
PWE  
WE  
DOUT  
DIN  
t
SA  
t
HZWE  
t
LZWE  
HIGH-Z  
SD  
DATA UNDEFINED  
t
t
HD  
DATA-IN VALID  
8
Integrated Circuit Solution Inc.  
LPSR015-0A 1/3/2001  
IC62LV1008L  
IC62LV1008LL  
WRITE CYCLE NO. 2 (CE1, CE2 Controlled)(1,2)  
t
WC  
ADDRESS  
t
SA  
tHA  
t
SCE1  
CE1  
CE2  
t
SCE2  
t
AW  
PWE  
t
WE  
DOUT  
DIN  
t
HZWE  
tLZWE  
HIGH-Z  
DATA UNDEFINED  
t
HD  
t
SD  
DATA-IN VALID  
Notes:  
1. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to  
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the  
rising or falling edge of the signal that terminates the Write.  
2. I/O will assume the HIGH-z state if OE =VIH.  
Integrated Circuit Solution Inc.  
9
LPSR015-0A 1/3/2002  
IC62LV1008L  
IC62LV1008LL  
DATA RETENTION SWITCHING CHARACTERISTICS  
Symbol  
VDR  
Parameter  
Vcc for Data Retention  
Test Condition  
See Data Retention Waveform  
Min.  
1.5  
Max.  
3.6  
Unit  
V
IDR  
Data Retention Current  
Vcc = 1.5V, CE1  
Vcc – 0.2V  
Com. (-L)  
Com. (-LL)  
Ind. (-L)  
15  
6
20  
9
µA  
µA  
µA  
µA  
Ind. (-LL)  
tSDR  
tRDR  
Data Retention Setup Time See Data Retention Waveform  
Recovery Time See Data Retention Waveform  
0
ns  
ns  
10  
DATA RETENTION WAVEFORM (CE1 Controlled)  
t
SDR  
Data Retention Mode  
tRDR  
V
V
CC  
DR  
3.0V  
2.2V  
CE1 VCC - 0.2V  
CE1  
GND  
10  
Integrated Circuit Solution Inc.  
LPSR015-0A 1/3/2001  
IC62LV1008L  
IC62LV1008LL  
ORDERING INFORMATION  
Industrial Range: -40°C to +85°C  
Commercial Range: 0°C to +70°C  
Speed (ns) Order Part No.  
Package  
Speed (ns) Order Part No.  
Package  
55  
IC62LV1008L-55BI  
8*10mm TF-BGA  
55  
IC62LV1008L-55B  
IC62LV1008L-70B  
IC62LV1008L-100B  
8*10mm TF-BGA  
8*10mm TF-BGA  
8*10mm TF-BGA  
70  
IC62LV1008L-70BI  
8*10mm TF-BGA  
70  
100  
IC62LV1008L-100BI 8*10mm TF-BGA  
100  
ORDERING INFORMATION  
Industrial Range: -40°C to +85°C  
Commercial Range: 0°C to +70°C  
Speed (ns) Order Part No.  
Package  
Speed (ns) Order Part No.  
Package  
55  
IC62LV1008LL-55BI 8*10mm TF-BGA  
55  
IC62LV1008LL-55B  
8*10mm TF-BGA  
IC62LV1008LL-55DI know good die  
IC62LV1008LL-55D  
know good die  
70  
IC62LV1008LL-70BI 8*10mm TF-BGA  
IC62LV1008LL-70DI know good die  
70  
IC62LV1008LL-70B  
IC62LV1008LL-70D  
8*10mm TF-BGA  
know good die  
100  
IC62LV1008LL-100BI 8*10mm TF-BGA  
IC62LV1008LL-100DI know good die  
100  
IC62LV1008LL-100B 8*10mm TF-BGA  
IC62LV1008LL-100D know good die  
Integrated Circuit Solution Inc.  
HEADQUARTER:  
NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK,  
HSIN-CHU, TAIWAN, R.O.C.  
TEL: 886-3-5780333  
Fax: 886-3-5783000  
BRANCH OFFICE:  
7F, NO. 106, SEC. 1, HSIN-TAI 5TH ROAD,  
HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C.  
TEL: 886-2-26962140  
FAX: 886-2-26962252  
http://www.icsi.com.tw  
Integrated Circuit Solution Inc.  
11  
LPSR015-0A 1/3/2002  

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