AA16-9DIL18 [HY]
Avalanche Photodiode Array; 雪崩光电二极管阵列
| 型号： | AA16-9DIL18 |
| 厂家： | 
HY ELECTRONIC CORP. |
| 描述： | Avalanche Photodiode Array |
| 文件： | 总2页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AA16-9 DIL18
16 Element
Avalanche Photodiode Array
Special characteristics:
quantum efficiency >80% at λ 760-910 nm
high speed, low noise
good uniformity between elements
low cross talk
Package DIL18:
Parameters:
AA16-9 DIL18
no. of Elements
Active Area / Element
[µm]
Gap / Separation
[µm]
Pitch
[µm]
Spectral Range
Spectral Responsivity 1)
(at 905 nm, M = 100)
16
648 * 208
13 12
10
9
14
11
8
17 16 15
18
112
4
6
7
5
1
2
3
320
22.8
450 … 1050
min. 55 A/W
typ. 60 A/W
1.5
Max. Gain
(Ipo= 1nA)
typ. 100
Dark Current 1)
(M = 100)
typ. 5 nA
typ. 2 pF
100 … 300 V
typ. 2 ns
window
Capacitance 1)/Element
(M=100)
0.7
Breakdown Voltage UBR
(at ID = 2 µA)
Rise Time
at 905 nm, 50 Ω
Cross-talk
(at 905 nm)
Photo Current Uniformity
(at M= 50)
Dark Current Uniformity
(at M= 50)
Operating Temperature
Storage Temperature
2.54
typ. 50 dB
± 20 %
typ. ± 5 %
± 20 %
typ. ± 5 %
-20 ... +70 °C
-60 ... +100 °C
Pin no.
1
Function
Element
Element
Element
Element
Element
Element
Element
Element
Guard Ring
Element
Element
Element
Element
1
3
2
3
5
4
7
9
11
13
15
5
6
7
8
9
10
11
12
13
14
15
16
17
18
16
14
12
10
1) measurement conditions:
Setup of photo current 1.0 nA at M = 1 and irradiation by a IRED
(880 nm, 80 nm bandwith).
Common Anode
Element
Element
Element
Element
8
6
4
2
Increase the photo current up to 100 nA, (M = 100) by internal multiplication
due to an increasing bias voltage.
www.silicon-sensor.com
www.pacific-sensor.com
Version: 06-03-03
Specification before: AD-LA-16-9-DIL 18
Order Number: 500038
Spectral Responsivity at M = 1
Spectral Responsivity at M = 100
series - 9
series - 9
0,700
0,600
0,500
0,400
0,300
0,200
0,100
0,000
70,00
60,00
50,00
40,00
30,00
20,00
10,00
0,00
400
500
600
700
800
900
1000
1100
400
500
600
700
800
900
1000
1100
Wavelength (nm)
W avelength (nm)
Quantum Efficiency for M = 100
series - 9
100,0
90,0
80,0
70,0
60,0
50,0
40,0
30,0
20,0
10,0
0,0
400
500
600
700
800
900
1000
1100
W avelength (nm)
Example of DC-Operating Circuit:
16x Transimpedance Amplifier
Maximum Ratings:
max. electrical power dissipation
400 mW at 22°C
200 mW for 1 s
IPh (DC) ≤ 250 µA
Out 1
max. optical peak value, once
max. continous optical operation
≤ 1 mA for signal 50 µs "on" / 1 ms "off"
( Pelectr. = Popt. * Sabs * M * UR )
Diode, protective circuit
Application Hints:
Out 16
Current should be limited by a protecting resistor or current limiting -
C2
C1
C3
C16
GR
IC inside the power supply.
Use of low noise read-out - IC.
AD-LA-16-9
For high gain applications bias voltage should be temperature compensated.
For low light level applications, blocking of ambient light should be used.
Common Anode
R
-UR
Handling Precautions:
Soldering temperature
min. Pin - length
260 °C for max. 10 s. The device must be protected against solder flux vapour!
2 mm
ESD - protection
Standard precautionary measures are sufficient.
Store devices in conductive foam.
Storage
Avoid skin contact with window!
Clean window with Ethyl alcohol if necessary.
Do not scratch or abrade window.
Deutschland:
Schweiz:
Inselkammerstraße 10
D-82008 Unterhaching
Tel: 089 614 503-10
E-Mail: power@hy-line.de E-Mail: power@hy-line.ch
URL: www.hy-line.de URL: www.hy-line.ch
Gründenstraße 82
CH-8247 Flurlingen
Tel.: 052 647 42 00
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