1A3 [HY]

PLASTIC SILICON RECTIFIERS; 塑料硅整流
1A3
型号: 1A3
厂家: HY ELECTRONIC CORP.    HY ELECTRONIC CORP.
描述:

PLASTIC SILICON RECTIFIERS
塑料硅整流

二极管
文件: 总2页 (文件大小:88K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1A1 thru 1A7  
REVERSE VOLTAGE - 50 to 1000 Volts  
FORWARD CURRENT - 1.0 Ampere  
PLASTIC SILICON RECTIFIERS  
R-1  
FEATURES  
Low cost  
Diffused junction  
Low forward voltage drop  
Low reverse leakage current  
.026(0.65)  
.022(0.55)  
1.0(25.4)  
High current capability  
MIN.  
The plastic material carries UL recognition 94V-0  
.132(3.35)  
.116(2.95)  
.104(2.65)  
.089(2.25)  
MECHANICAL DATA  
Case: JEDEC R-1 molded plastic  
Polarity: Color band denotes cathode  
Weight: 0.15 grams  
1.0(25.4)  
MIN.  
Mounting position : Any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SYMBOL  
VRRM  
1A1  
50  
1A2  
100  
70  
1A3  
200  
140  
200  
1A4  
400  
280  
400  
1A5  
600  
420  
600  
1A6  
800  
560  
800  
1A7  
1000  
700  
UNIT  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
V
V
V
Maximum RMS Voltage  
VRMS  
35  
Maximum DC Blocking Voltage  
Maximum Average Forward  
VDC  
50  
100  
1000  
I(AV)  
1.0  
A
Rectified Current  
@TA=75 ℃  
Peak Forward Surge Current  
8.3ms Single Half Sine-Wave  
IFSM  
30  
A
Super Imposed on Rated Load(JEDEC Method)  
Maximum Forward Voltage at 1.0A DC  
1.0  
VF  
IR  
V
5.0  
50  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@TJ=25℃  
μA  
@TJ=100℃  
10  
Typical Junction Capacitance (Note1)  
Typical Thermal Resistance (Note2)  
Operating Temperature Range  
Storage Temperature Range  
CJ  
RθJA  
TJ  
pF  
/W  
26  
-55 to +125  
-55 to +150  
TSTG  
NOTES:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
2.Thermal resistance junction to ambient.  
~ 8 ~  
RATING AND CHARACTERISTIC CURVES  
1A1 thru 1A7  
FIG. 2 MAXIMUM NON-REPETITIVE SURGE CURRENT  
FIG. 1 - FORWARD CURRENT DERATING CURVE  
1.0  
50  
40  
SINGLE PHASE HALF WAVE  
60Hz RESISTIVE OR  
0.8  
0.6  
INDUCTIVE LOAD  
PULSE WIDTH 8.3ms  
SINGLE HALF-SINE-WAVE  
(JEDEC METHOD)  
30  
20  
0.4  
10  
0
0.2  
0
10  
20  
50  
1
2
5
100  
25  
50  
75  
100  
125  
150  
175  
AMBIENT TEMPERATURE. ℃  
NUMBER OF CYCLES AT 60Hz  
FIG.4 TYPICAL FORWARD CHARACTERISTICS  
FIG. 3 TYPICAL JUNCTION CAPACITANCE  
10  
100  
60  
40  
1.0  
20  
TJ = 25°  
10  
0.1  
TJ = 25°C  
4
2
1
f = 1MHz  
PULSE WIDTH 300us  
0.01  
10  
REVERSE VOLTAGE ,VOLTS  
100  
1
4
40  
0
0
1.2  
1.4  
1.8  
0.2  
0.4  
0.6 0.8  
1.0  
1.6  
INSTANTANEOUS FORWARD VOLTAGEVOLTS  
~ 9 ~  

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