HY27US16121M-VPIS [HYNIX]
Flash, 32MX16, 12000ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, PLASTIC, WSOP1-48;
| 型号： | HY27US16121M-VPIS |
| 厂家： | 
HYNIX SEMICONDUCTOR |
| 描述： | Flash, 32MX16, 12000ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, PLASTIC, WSOP1-48 闪存 |
| 文件： | 总49页 (文件大小：414K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Document Title
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory
Revision History
Revision
History
No.
Draft Date Remark
Sep. 2004 Preliminary
0.0
Initial Draft.
1) Correct part number ( change mode)
- 2A -> 1A (sequential row read : disable -> enable)
2) Correct Table.5 & Table 12
- Correct Command Set
- correct AC timing characteristics (tWP : 40 -> 25ns, tWH : 20 ->15ns)
3) Correct Summary description & page.7
- The cache feature is deleted in summary description.
- Note.3 is deleted. (page.7)
0.1
Oct. 22. 2004 Preliminary
4) Add System interface using CE don’t care (page. 38)
5) Change TSOP1, WSOP1,FBGA package dimension & figures.
- Change TSOP1, WSOP1, FBGA package mechanical data
- Change TSOP1, WSOP package figures
6) Correct TSOP1, WSOP1 Pin configuration
- 38th NC pin has been changed Lockpre (figure 2,3)
7) Add Bad block Management
1) LOCKPRE is changed to PRE
- Texts, Table and figures are changed.
2) Change Command set
- Read A,B are changed to Read1.
- Read C is changed to Read2.
3) Change AC, DC characterics
- tRB, tCRY, tCEH and tOH are added.
4) Correct Program time (max)
- before : 700us
0.2
Mar. 08. 2005 Preliminary
- after : 500us
5) Edit figures
- Address names are changed.
6) Change FBGA Package Dimension
- FD1 : 1.70(before) -> 0.90(after)
Rev 1.3 / Jun. 2006
1
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Revision History
- Continued
Revision
No.
History
Draft Date Remark
1) Change AC Characteristics (1.8V device)
tRC
50
tRP
25
tREH
15
tWC
50
tWP tWH tREA
before
after
25
40
15
20
30
40
60
40
20
60
2) Change AC Parameter
0.3
Jul. 08. 2005 Preliminary
tCRY(3.3V)
tCRY(1.8V)
50+tr(R/B#)
80+tr(R/B#)
tOH
Before
After
50+tr(R/B#)
60+tr(R/B#)
15
10
3) Change Figure 20,22
4) Add Read ID Table
5) Change PAD Configuration
- GND is changed to VSS.
6) Add Marking Information
1) The test condition for ICC1 operating current is corrected.
tCRY(3.3V)
tRC=50ns,
CE#=VIL,
IOUT=0mA
Before
After
0.4
Jul. 15. 2005 Preliminary
tRC(1.8V=60ns,
3.3V=50ns)
CE#=VIL,
IOUT=0mA
Rev 1.3 / Jun. 2006
2
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Revision History
- Continued
Revision
No.
History
1) The test conditions is corrected.
Draft Date Remark
Test Conditions (ICC1)
Test Conditions (ILI, ILO)
tRC=50ns,
CE#=VIL,
IOUT=0mA
Before
After
VIN=VOUT=0 to 3.6V
tRC(1.8V=60ns,
3.3V=50ns)
CE#=VIL,
VIN=VOUT=(1.8V, 0 to 1.95V)
=(3.3V, 0 to 3.6V)
0.5
Jul. 20. 2005 Preliminary
IOUT=0mA
2) Change VIL parameter (max.)
1.8V
3.3V
0.2xVcc
0.8
Before
After
0.2xVcc
0.4
1) Correct the test Conditions (DC Characteristics table)
Test Conditions (ILI, ILO)
VIN=VOUT=(1.8V, 0 to 1.95V)
Before
=(3.3V, 0 to 3.6V)
0.6
Jul. 22. 2005 Preliminary
After
VIN=VOUT=0 to Vcc (max)
2) Change AC Conditions table
3) Add tWW parameter ( tWW = 100ns, min)
- Texts & Figures are added.
- tWW is added in AC timing characteristics table.
1) Edit Copy Back Program operation step
2) Edit System Interface Using CE don’t care Figures.
3) Change AC Characteristics (3.3V device)
tRP
30
tREA
35
0.7
Aug. 01. 2005 Preliminary
before
after
25
30
4) Correct Address Cycle Map.
1) Correct PKG dimension (TSOP, USOP PKG)
CP
0.8
0.9
Aug. 29. 2005 Preliminary
Nov. 07. 2005 Preliminary
Before
After
0.050
0.100
1) Correct USOP figure.
Rev 1.3 / Jun. 2006
3
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Revision History
- Continued
Revision
No.
History
Draft Date Remark
1.0
1.1
1) Delet Preliminary.
1) Correct Figure 32.
Nov. 08. 2005
Feb. 06. 2006
1) Add ECC algorithm. (1bit/512bytes)
2) Correct Read ID naming
1) Change AC Parameter
1.2
May. 09. 2006
tWHR
1.3
Jun. 20. 2006
Before
After
60 ns
50 ns
Rev 1.3 / Jun. 2006
4
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
FEATURES SUMMARY
HIGH DENSITY NAND Flash MEMORIES
FAST BLOCK ERASE
- Block erase time: 2ms (Typ.)
- Cost effective solutions for mass storage applications
STATUS REGISTER
NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
ELECTRONIC SIGNATURE
- 1st cycle : Manufacturer Code
- 2nd cycle: Device Code
- Pinout compatibility for all densities
SUPPLY VOLTAGE
- 3.3V device: VCC = 2.7 to 3.6V
CHIP ENABLE DON'T CARE
- Simple interface with microcontroller
: HY27USXX121A
- 1.8V device: VCC = 1.7 to 1.95V : HY27SSXX121A
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
- Boot from NAND support
- Automatic Memory Download
Memory Cell Array
= (512+16) Bytes x 32 Pages x 4,096 Blocks
= (256+8) Words x 32 pages x 4,096 Blocks
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
PAGE SIZE
- Program/Erase locked during Power transitions
- x8 device : (512 + 16 spare) Bytes
: HY27(U/S)S08121A
DATA INTEGRITY
- x16 device: (256 + 8 spare) Words
: HY27(U/S)S16121A
- 100,000 Program/Erase cycles
(with 1bit/512byte ECC)
- 10 years Data Retention
BLOCK SIZE
PACKAGE
- x8 device: (16K + 512 spare) Bytes
- x16 device: (8K + 256 spare) Words
- HY27(U/S)S(08/16)121A-T(P)
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27(U/S)S(08/16)121A-T (Lead)
- HY27(U/S)S(08/16)121A-TP (Lead Free)
PAGE READ / PROGRAM
- Random access: 3.3V: 12us (max.)
1.8V: 15us (max.)
- HY27(U/S)S(08/16)121A-S(P)
: 48-Pin USOP1 (12 x 17 x 0.65 mm)
- HY27(U/S)S(08/16)121A-S (Lead)
- HY27(U/S)S(08/16)121A-SP (Lead Free)
- Sequential access: 3.3V device: 50ns (min.)
1.8V device: 60ns (min.)
- Page program time: 200us (typ.)
- HY27(U/S)S(08/16)121A-F(P)
COPY BACK PROGRAM MODE
- Fast page copy without external buffering
: 63-Ball FBGA (9 x 11 x 1.0 mm)
- HY27(U/S)S(08/16)121A-F (Lead)
- HY27(U/S)S(08/16)121A-FP (Lead Free)
Rev 1.3 / Jun. 2006
5
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
1. SUMMARY DESCRIPTION
The HYNIX HY27(U/S)S(08/16)121A series is a 64Mx8bit with spare 2Mx8 bit capacity. The device is offered in 1.8V
Vcc Power Supply and in 3.3V Vcc Power Supply.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old
data is erased.
The device contains 4096 blocks, composed by 32 pages consisting in two NAND structures of 16 series connected
Flash cells.
A program operation allows to write the 512-byte page in typical 200us and an erase operation can be performed in
typical 2ms on a 16Kbyte(X8 device) block.
Data in the page mode can be read out at 50ns cycle time(3.3V device) per byte. The I/O pins serve as the ports for
address and data input/output as well as command input. This interface allows a reduced pin count and easy migration
towards different densities, without any rearrangement of footprint.
Commands, Data and Addresses are synchronously introduced using CE, WE, ALE and CLE input pin.
The on-chip Program/Erase Controller automates all program and erase functions including pulse repetition, where
required, and internal verification and margining of data.
The modifying can be lockde using the WP input pin.
The output pin R/B (open drain buffer) signals the status of the device during each operation. In a system with multi-
ple memories the R/B pins can be connected all together to provide a global status signal.
Even the write-intensive systems can take advantage of the HY27(U/S)S(08/16)121A extended reliability of 100K pro-
gram/erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.
The chip could be offered with the CE don’t care function. This function allows the direct download of the code from
the NAND Flash memory device by a microcontroller, since the CE transitions do not stop the read operation.
The copy back function allows the optimization of defective blocks management: when a page program operation fails
the data can be directly programmed in another page inside the same array section without the time consuming serial
data insertion phase.
This device includes also extra features like OTP/Unique ID area, Block Lock mechanism, Automatic Read at Power Up,
Read ID2 extension.
The HYNIX HY27(U/S)S(08/16)121A series is available in 48 - TSOP1 12 x 20 mm , 48 - USOP1 12 x 17 mm,
FBGA 9 x 11 mm.
1.1 Product List
PART NUMBER
HY27SS08121A
HY27SS16121A
HY27US08121A
HY27US16121A
ORIZATION
VCC RANGE
PACKAGE
x8
x16
x8
1.70 - 1.95 Volt
63FBGA / 48TSOP1 / 48USOP1
2.7V - 3.6 Volt
x16
Rev 1.3 / Jun. 2006
6
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
9&&
&(
,2ꢀa,2ꢁ
,2ꢂa,2ꢃꢄꢅ[ꢃꢆꢇ2QO\ꢈ
:(
5ꢉ%
5(
$/(
&/(
:3
35(
966
Figure1: Logic Diagram
IO15 - IO8
IO7 - IO0
CLE
Data Input / Outputs (x16 Only)
Data Input / Outputs
Command latch enable
Address latch enable
Chip Enable
ALE
CE
RE
Read Enable
WE
Write Enable
WP
Write Protect
R/B
Ready / Busy
Vcc
Power Supply
Vss
Ground
NC
No Connection
PRE
Power-On Read Enable, Lock Unlock
Table 1: Signal Names
Rev 1.3 / Jun. 2006
7
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
ꢇ
ꢄꢉ
1&
1&
1&
1&
1&
1&
5ꢀ%
5(
1&
1&
1&
1&
,ꢀ2ꢁ
,ꢀ2ꢂ
,ꢀ2ꢃ
,ꢀ2ꢄ
1&
ꢇ
ꢄꢉ
1&
1&
1&
1&
1&
1&
5ꢀ%
5(
9VV
,ꢀ2ꢇꢃ
,ꢀ2ꢁ
,ꢀ2ꢇꢄ
,ꢀ2ꢂ
,ꢀ2ꢇꢅ
,ꢀ2ꢃ
,ꢀ2ꢇꢆ
,ꢀ2ꢄ
1&
35(
9FF
1&
1&
&(
&(
1&
1&
1&
9FF
9VV
1&
1&
&/(
$/(
:(
:3
1&
1&
1&
1&
1&
1&
1&
9FF
9VV
1&
1&
&/(
$/(
:(
:3
1&
1&
1&
1&
1&
35(
9FF
9VV
1&
1&
1&
,ꢀ2ꢅ
,ꢀ2ꢆ
,ꢀ2ꢇ
,ꢀ2ꢈ
1&
1$1'ꢇ)ODVK
7623ꢃ
1$1'ꢇ)ODVK
7623ꢃ
ꢇꢆ
ꢇꢅ
ꢅꢁ
ꢅꢂ
ꢇꢆ
ꢇꢅ
ꢅꢁ
ꢅꢂ
1&
ꢅ[ꢂꢈ
ꢅ[ꢃꢆꢈ
,ꢀ2ꢇꢇ
,ꢀ2ꢅ
,ꢀ2ꢇꢈ
,ꢀ2ꢆ
,ꢀ2ꢊ
,ꢀ2ꢇ
,ꢀ2ꢉ
,ꢀ2ꢈ
9VV
1&
1&
1&
ꢆꢄ
ꢆꢃ
ꢆꢄ
ꢆꢃ
Figure 2. 48TSOP1 Contactions, x8 and x16 Device
ꢇ
ꢄꢉ
1&
1&
1&
1&
1&
1&
5ꢀ%
5(
9VV
ꢇ
ꢄꢉ
1&
1&
1&
1&
1&
,ꢀ2ꢁ
,ꢀ2ꢂ
,ꢀ2ꢃ
,ꢀ2ꢄ
1&
,ꢀ2ꢇꢃ
,ꢀ2ꢁ
,ꢀ2ꢇꢄ
,ꢀ2ꢂ
,ꢀ2ꢇꢅ
,ꢀ2ꢃ
,ꢀ2ꢇꢆ
,ꢀ2ꢄ
1&
35(
9FF
1&
1&
1&
1&
1&
1&
1&
5ꢀ%
5(
&(
&(
1&
1&
1&
9FF
9VV
1&
1&
&/(
$/(
:(
:3
1&
1&
1&
1&
1&
1&
1&
9FF
9VV
1&
1&
&/(
$/(
:(
:3
1&
1&
1&
1&
1&
35(
9FF
9VV
1&
1&
1&
,ꢀ2ꢅ
,ꢀ2ꢆ
,ꢀ2ꢇ
,ꢀ2ꢈ
1&
1$1'ꢇ)ODVK
8623ꢃ
1$1'ꢇ)ODVK
8623ꢃ
ꢇꢆ
ꢇꢅ
ꢅꢁ
ꢅꢂ
ꢇꢆ
ꢇꢅ
ꢅꢁ
ꢅꢂ
1&
ꢅ[ꢂꢈ
ꢅ[ꢃꢆꢈ
,ꢀ2ꢇꢇ
,ꢀ2ꢅ
,ꢀ2ꢇꢈ
,ꢀ2ꢆ
,ꢀ2ꢊ
,ꢀ2ꢇ
,ꢀ2ꢉ
,ꢀ2ꢈ
9VV
1&
1&
1&
ꢆꢄ
ꢆꢃ
ꢆꢄ
ꢆꢃ
Figure 3. 48USOP1 Contactions, x8 and x16 Device
Rev 1.3 / Jun. 2006
8
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
ꢃꢇꢇꢇꢇꢇꢇꢇꢇꢊꢇꢇꢇꢇꢇꢇꢇꢋꢇꢇꢇꢇꢇꢇꢇꢌꢇꢇꢇꢇꢇꢇꢇꢄꢇꢇꢇꢇꢇꢇꢆꢇꢇꢇꢇꢇꢇꢇꢇꢁꢇꢇꢇꢇꢇꢇꢇꢂꢇꢇꢇꢇꢇꢇꢇꢍꢇꢇꢇꢇꢇꢇꢃꢀ
$
%
1&
1&
1&
1&
1&
1&
1&
&
$/( 9VV
:3
1&
1&
&(
1&
:(
1&
5%
1&
'
&/(
5(
1&
1&
1&
1&
1&
1&
1&
1&
1&
1&
1&
9FF
1&
1&
1&
1&
1&
1&
(
)
1&
1&
1&
1&
9VV
1&
35(
9FF
*
+
-
,ꢀ2ꢈ
,ꢀ2ꢇ
,ꢀ2ꢆ
,ꢀ2ꢃ ,ꢀ2ꢁ
9VV
,ꢀ2ꢅ ,ꢀ2ꢄ
,ꢀ2ꢂ
.
/
1&
1&
1&
1&
1&
1&
1&
1&
0
Figure 4. 63FBGA Contactions, x8 Device (Top view through package)
ꢃꢇꢇꢇꢇꢇꢇꢇꢇꢊꢇꢇꢇꢇꢇꢇꢇꢋꢇꢇꢇꢇꢇꢇꢇꢌꢇꢇꢇꢇꢇꢇꢇꢄꢇꢇꢇꢇꢇꢇꢆꢇꢇꢇꢇꢇꢇꢇꢇꢁꢇꢇꢇꢇꢇꢇꢇꢂꢇꢇꢇꢇꢇꢇꢇꢍꢇꢇꢇꢇꢇꢇꢃꢀ
$
%
1&
1&
1&
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1&
1&
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:3
1&
1&
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1&
:(
1&
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1&
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5(
1&
1&
1&
1&
1&
1&
1&
1&
1&
1&
1&
(
)
1&
1&
1&
35(
9FF
,ꢀ2ꢃ
,ꢀ2ꢇꢆ
9FF
,ꢀ2ꢁ
,ꢀ2ꢇꢄ
,ꢀ2ꢂ
,ꢀ2ꢇꢅ
*
+
-
,ꢀ2ꢉ
,ꢀ2ꢇꢈ
,ꢀ2ꢇ
,ꢀ2ꢊ
,ꢀ2ꢆ
,ꢀ2ꢅ
,ꢀ2ꢇꢇ
,ꢀ2ꢇꢃ
,ꢀ2ꢈ
9VV
9VV
,ꢀ2ꢄ
.
/
1&
1&
1&
1&
1&
1&
1&
1&
0
Figure 5. 63FBGA Contactions, x16 Device (Top view through package)
Rev 1.3 / Jun. 2006
9
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
1.2 PIN DESCRIPTION
Pin Name
Description
DATA INPUTS/OUTPUTS
The IO pins allow to input command, address and data and to output data during read / program
IO0-IO7
IO8-IO15(1) operations. The inputs are latched on the rising edge of Write Enable (WE). The I/O buffer float to
High-Z when the device is deselected or the outputs are disabled.
COMMAND LATCH ENABLE
CLE
ALE
CE
This input activates the latching of the IO inputs inside the Command Register on the Rising edge of
Write Enable (WE).
ADDRESS LATCH ENABLE
This input activates the latching of the IO inputs inside the Address Register on the Rising edge of
Write Enable (WE).
CHIP ENABLE
This input controls the selection of the device. When the device is busy CE low does not deselect the
memory.
WRITE ENABLE
WE
This input acts as clock to latch Command, Address and Data. The IO inputs are latched on the rise
edge of WE.
READ ENABLE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is
valid tREA after the falling edge of RE which also increments the internal column address counter by
one.
RE
WRITE PROTECT
WP
The WP pin, when Low, provides an Hardware protection against undesired modify (program / erase)
operations.
READY BUSY
R/B
The Ready/Busy output is an Open Drain pin that signals the state of the memory.
SUPPLY VOLTAGE
The VCC supplies the power for all the operations (Read, Write, Erase).
VCC
VSS
NC
GROUND
NO CONNECTION
To Enable and disable the Lock mechanism and Power On Auto Read. When PRE is a logic high,
Block Lock mode and Power-On Auto-Read mode are enabled, and when PRE is a logic low, Block
Lock mode and Power-On Auto-Read mode are disabled. Power-On Auto-Read mode is available only
on 3.3V device.
PRE
Not using LOCK MECHANISM & POWER-ON AUTO-READ, connect it Vss or leave it NC.
Table 2: Pin Description
NOTE:
1. For x16 version only
2. A 0.1uF capacitor should be connected between the Vcc Supply Voltage pin and the Vss Ground pin to decouple
the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required
during program and erase operations.
Rev 1.3 / Jun. 2006
10
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
IO0
A0
IO1
A1
IO2
A2
IO3
A3
IO4
A4
IO5
A5
IO6
A6
IO7
A7
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
A9
A10
A18
A11
A19
A12
A20
A13
A21
A14
A22
A15
A23
A16
A24
A17
A25
L(1)
L(1)
L(1)
L(1)
L(1)
L(1)
L(1)
Table 3: Address Cycle Map(x8)
NOTE:
1. L must be set to Low.
2. A8 is set to LOW or High by the 00h or 01h Command.
IO0
A0
IO1
A1
IO2
A2
IO3
A3
IO4
A4
IO5
A5
IO6
A6
IO7
IO8-IO15
L(1)
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
A7
A16
A24
L(1)
L(1)
A9
A10
A18
A11
A19
A12
A20
A13
A21
A14
A22
A15
A23
L(1)
A17
A25
L(1)
L(1)
L(1)
L(1)
L(1)
L(1)
L(1)
Table 4: Address Cycle Map(x16)
NOTE:
1. L must be set to Low.
Acceptable command
during busy
FUNCTION
1st CYCLE 2nd CYCLE 3rd CYCLE 4th CYCLE
READ 1
00h/01h
50h
-
-
READ 2
-
-
-
READ ID
90h
-
RESET
FFh
-
-
Yes
Yes
PAGE PROGRAM
COPY BACK PGM
BLOCK ERASE
READ STATUS REGISTER
LOCK BLOCK
80h
10h
8Ah
D0h
-
-
00h
(10h)
60h
-
-
70h
2Ah
2Ch
23h
LOCK TIGHT
UNLOCK (start area)
UNLOCK (end area)
READ LOCK STATUS
24h
7Ah
Table 5: Command Set
Rev 1.3 / Jun. 2006
11
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
CLE
H
L
ALE
L
CE
L
WE
Rising
Rising
Rising
Rising
Rising
H
RE
WP
MODE
H
X
Command Input
Address Input(4 cycles)
Command Input
Address Input(4 cycles)
Read Mode
H
L
L
H
X
H
L
L
H
H
Write Mode
Data Input
H
L
L
H
H
L
L
H
H
L(1)
L
L
L
Falling
X
Sequential Read and Data Output
During Read (Busy)
During Program (Busy)
During Erase (Busy)
Write Protect
L
L
H
H
X
X
X
X
X
X
X
X
X
H
X
X
X
X
H
L
X
X
X
X
X
X
H
X
0V/Vcc
Stand By
Table 6: Mode Selection
NOTE:
1. With the CE high during latency time does not stop the read operation
Rev 1.3 / Jun. 2006
12
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
2. BUS OPERATION
There are six standard bus operations that control the device. These are Command Input, Address Input, Data Input,
Data Output, Write Protect, and Standby.
Typically glitches less than 5 ns on Chip Enable, Write Enable and Read Enable are ignored by the memory and do not
affect bus operations.
2.1 Command Input.
Command Input bus operation is used to give a command to the memory device. Command are accepted with Chip
Enable low, Command Latch Enable High, Address Latch Enable low and Read Enable High and latched on the rising
edge of Write Enable. Moreover for commands that starts a modifying operation (write/erase) the Write Protect pin
must be high. See figure 7 and table 12 for details of the timings requirements. Command codes are always applied on
IO7:0, disregarding the bus configuration (X8/X16).
2.2 Address Input.
Address Input bus operation allows the insertion of the memory address. Four cycles are required to input the
addresses for the 512Mbit devices. Addresses are accepted with Chip Enable low, Address Latch Enable High, Com-
mand Latch Enable low and Read Enable high and latched on the rising edge of Write Enable. Moreover for commands
that starts a modify operation (write/erase) the Write Protect pin must be high. See figure 8 and table 12 for details of
the timings requirements. Addresses are always applied on IO7:0, disregarding the bus configuration (X8/X16).
In addition, addresses over the addressable space are disregarded even if the user sets them during command inser-
tion.
2.3 Data Input.
Data Input bus operation allows to feed to the device the data to be programmed. The data insertion is serially and
timed by the Write Enable cycles. Data are accepted only with Chip Enable low, Address Latch Enable low, Command
Latch Enable low, Read Enable High, and Write Protect High and latched on the rising edge of Write Enable. See figure
9 and table 12 for details of the timings requirements.
2.4 Data Output.
Data Output bus operation allows to read data from the memory array and to check the status register content, the
lock status and the ID data. Data can be serially shifted out toggling the Read Enable pin with Chip Enable low, Write
Enable High, Address Latch Enable low, and Command Latch Enable low. See figures 10 to 14 and table 12 for details
of the timings requirements.
2.5 Write Protect.
Hardware Write Protection is activated when the Write Protect pin is low. In this condition modify operation do not
start and the content of the memory is not altered. Write Protect pin is not latched by Write Enable to ensure the pro-
tection even during the power up.
2.6 Standby.
In Standby mode the device is deselected, outputs are disabled and Power Consumption is reduced.
Rev 1.3 / Jun. 2006
13
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
3. DEVICE OPERATION
3.1 Page Read.
Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00h to the
command register along with followed by the four address input cycles. Once the command is latched, it does not
need to be written for the following page read operation.
Three types of operations are available: random read, serial page read and sequential row read.
The random read mode is enabled when the page address is changed. The 528 bytes (x8 device) or 264 word (x16
device) of data within the selected page are transferred to the data registers in less than access random read time tR
(12us, 3.3V device). The system controller can detect the completion of this data transfer tR (12us, 3.3V device) by
analyzing the output of R/B pin. Once the data in a page is loaded into the registers, they may be read out in 50ns
cycle time by sequentially pulsing RE. High to low transitions of the RE clock output the data stating from the selected
column address up to the last column address.
After the data of last column address is clocked out, the next page is automatically selected for sequential row read.
Waiting tR again allows reading the selected page. The sequential row read operation is terminated by bringing CE
high.
The way the Read1 and Read2 commands work is like a pointer set to either the main area or the spare area. Writing
the Read2 command user may selectively access the spare area of bytes 512 to 527. Addresses A0 to A3 set the start-
ing address of the spare area while addresses A4 to A7 are ignored. Unless the operation is aborted, the page address
is automatically incremented for sequential row
Read as in Read1 operation and spare sixteen bytes of each page may be sequentially read. The Read1 command
(00h/01h) is needed to move the pointer back to the main area. Figure_11 to 13 show typical sequence and timings
for each read operation.
Devices with automatic read of page0 at power up can be provided on request.
3.2 Page Program.
The device is programmed basically on a page basis, but it does allow multiple partial page programming of a byte or
consecutive bytes up to 528 (x8 device), in a single page program cycle. The number of consecutive partial page pro-
gramming operations within the same page without an intervening erase operation must not exceed 1 for main array
and 2 for spare array. The addressing may be done in any random order in a block. A page program cycle consists of a
serial data loading period in which up to 528 bytes (x8 device) or 264 word (x16 device) of data may be loaded into
the page register, followed by a non-volatile programming period where the loaded data is programmed into the
appropriate cell. Serial data loading can be started from 2nd half array by moving pointer. About the pointer operation,
please refer to Figure_29.
The data-loading sequence begins by inputting the Serial Data Input command (80h), followed by the four address
input cycles and then serial data loading. The Page Program confirm command (10h) starts the programming process.
Writing 10h alone without previously entering the serial data will not initiate the programming process. The internal P/
E/R Controller automatically executes the algorithms and timings necessary for program and verify, thereby freeing the
system controller for other tasks. Once the program process starts, the Read Status Register command may be
entered, with RE and CE low, to read the status register. The system controller can detect the completion of a program
cycle by monitoring the R/B output, or the Status bit (I/O 6) of the Status Register. Only the Read Status command
and Reset command are valid while programming is in progress. When the Page Program is complete, the Write Status
Bit (I/O 0) may be checked Figure_17
The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command reg-
ister remains in Read Status command mode until another valid command is written to the command register.
Rev 1.3 / Jun. 2006
14
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
3.3 Block Erase.
The Erase operation is done on a block (16K Byte) basis. It consists of an Erase Setup command (60h), a Block
address loading and an Erase Confirm Command (D0h). The Erase Confirm command (D0h) following the block
address loading initiates the internal erasing process. This two-step sequence of setup followed by execution com-
mand ensures that memory contents are not accidentally erased due to external noise conditions.
The block address loading is accomplished in two to four cycles depending on the device density. Only block addresses
(A14 to A26) are needed while A9 to A13 is ignored.
At the rising edge of WE after the erase confirm command input, the internal P/E/R Controller handles erase and
erase-verify. When the erase operation is completed, the Write Status Bit (I/O 0) may be checked. Figure_18 details
the sequence.
3.4 Copy-Back Program.
The copy-back program is provided to quickly and efficiently rewrite data stored in one page within the plane to
another page within the same plane without using an external memory. Since the time-consuming sequential-reading
and its reloading cycles are removed, the system performance is improved. The benefit is especially obvious when a
portion of a block is updated and the rest of the block also need to be copied to the newly assigned free block. The
operation for performing a copy-back program is a sequential execution of page-read without burst-reading cycle and
copying-program with the address of destination page. A normal read operation with "00h" command and the address
of the source page moves the whole 528byte data into the internal buffer. As soon as the device returns to Ready
state, Page-Copy Data-input command (8Ah) with the address cycles of destination page followed may be written. The
Program Confirm command (10h) is not needed to actually begin the programming operation. For backward-compati-
bility, issuing Program Confirm command during copy-back does not affect correct device operation.
Copy-Back Program operation is allowed only within the same memory plane. Once the Copy-Back Program is finished,
any additional partial page programming into the copied pages is prohibited before erase. Plane address must be the
same between source and target page
"When there is a program-failure at Copy-Back operation, error is reported by pass/fail status. But, if
Copy-Back operations are accumulated over time, bit error due to charge loss is not checked by external
error detection/correction scheme. For this reason, two bit error correction is recommended for the use
of Copy-Back operation."
Figure 17 shows the command sequence for the copy-back operation.
The Copy Back Program operation requires three steps:
- 1. The source page must be read using the Read A command (one bus write cycle to setup the command and then 4
cycle bus to input the source page address.) This operation copies all 264 Words/ 528 Bytes from the page into
the page Buffer.
- 2. When the device returns to the ready state (Ready/Busy High), the second bus write cycle of the command is
given with the 4cycles to input the target page address. A14 & A25 must be the same for the Source and Target
Pages.
- 3. Then the confirm command is issued to start the P/E/R Controller.
Rev 1.3 / Jun. 2006
15
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
3.5 Read Status Register.
The device contains a Status Register which may be read to find out whether read, program or erase operation is com
pleted, and whether the program or erase operation is completed successfully. After writing 70h command to the com-
mand register, a read cycle outputs the content of the Status Register to the I/O pins on the falling edge of CE or RE,
whichever occurs last. This two line control allows the system to poll the progress of each device in multiple memory
connections even when R/B pins are common-wired. RE or CE does not need to be toggled for updated status. Refer
to table 13 for specific Status Register definitions. The command register remains in Status Read mode until further
commands are issued to it. Therefore, if the status register is read during a random read cycle, a read command (00h
or 50h) should be given before sequential page read cycle.
3.6 Read ID.
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an
address input of 00h. Two read cycles sequentially output the manufacturer code (ADh), the device code. The com-
mand register remains in Read ID mode until further commands are issued to it. Figure 19 shows the operation
sequence, while tables 16 explain the byte meaning.
3.7 Reset.
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state
during random read, program or erase mode, the reset operation will abort these operations. The contents of memory
cells being altered are no longer valid, as the data will be partially programmed or erased. The command register is
cleared to wait for the next command, and the Status Register is cleared to value E0h when WP is high. Refer to table
12 for device status after reset operation. If the device is already in reset state a new reset command will not be
accepted by the command register. The R/B pin transitions to low for tRST after the Reset command is written. Refer
to figure 25.
Rev 1.3 / Jun. 2006
16
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
4. OTHER FEATURES
4.1 Data Protection & Power on/off Sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal
voltage detector disables all functions whenever Vcc is below about 1.1V (1.8V device), 2.0V (3.3V device). WP pin
provides hardware protection and is recommended to be kept at VIL during power-up and power-down. A recovery
time of minimum 10us is required before internal circuit gets ready for any command sequences as shown in Figure
26. The two-step command sequence for program/erase provides additional software protection.
If the power is dropped during the ready read/write/erase operation, Power protection function may not guaranteed
the data. Power protection function is only available during the power on/off sequence.
4.2 Ready/Busy.
The device has a Ready/Busy output that provides method of indicating the completion of a page program, erase,
copy-back and random read completion. The R/B pin is normally high and goes to low when the device is busy (after a
reset, read, program, erase operation). It returns to high when the internal controller has finished the operation. The
pin is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is
related to tr(R/B) and current drain during busy (Ibusy), an appropriate value can be obtained with the following ref-
erence chart (Fig 27). Its value can be determined by the following guidance.
4.3 Lock Block Feature
In high state of PRE pin, Block lock mode and Power on Auto read are enabled, otherwise it is regarded
as NAND Flash without PRE pin.
Block Lock mode is enabled while PRE pin state is high, which is to offer protection features for NAND Flash data. The
Block Lock mode is divided into Unlock, Lock, Lock-tight operation. Consecutive blocks protects data allows those
blocks to be locked or lock-tighten with no latency. This block lock scheme offers two levels of protection. The first
allows software control (command input method) of block locking that is useful for frequently changed data blocks,
while the second requires hardware control (WP low pulse input method) before locking can be changed that is useful
for protecting infrequently changed code blocks. The followings summarized the locking functionality.
- All blocks are in a locked state on power-up. Unlock sequence can unlock the locked blocks.
- The Lock-tight command locks blocks and prevents from being unlocked. Lock-tight state can be returned to lock
state only by Hardware control(WP low pulse input).
1. Block lock operation
1) Lock
- Command Sequence: Lock block Command (2Ah). See Fig. 20.
- All blocks default to locked by power-up and Hardware control (WP low pulse input)
- Partial block lock is not available; Lock block operation is based on all block unit
- Unlocked blocks can be locked by using the Lock block command, and a lock block’s status can be changed to
unlock or lock-tight using the appropriate commands
- On the program or erase operation in Locked or Lock-tighten block, Busy state holds 1~10us(tLBSY)
Rev 1.3 / Jun. 2006
17
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
2) Unlock
- Command Sequence: Unlock block Command (23h) + Start block address + Command (24h) + End block address.
See Fig. 21.
- Unlocked blocks can be programmed or erased.
- An unlocked block’s status can be changed to the locked or lock-tighten state using the appropriate sequence of
commands.
- Only one consecutive area can be released to unlock state from lock state; Unlocking multi area is not available.
- Start block address must be nearer to the logical LSB (Least Significant Bit) than End block address.
- One block is selected for unlocking block when Start block address is same as End block address.
3) Lock-tight
- Command Sequence: Lock-tight block Command (2Ch). See Fig. 22.
- Lock-tighten blocks offer the user an additional level of write protection beyond that of a regular lock block. A block
that is lock-tighten can’t have its state changed by software control, only by hardware control (WP low pulse
input); Unlocking multi area is not available
- Only locked blocks can be lock-tighten by lock-tight command.
- On the program or erase operation in Locked or Lock-tighten block, Busy state holds 1~10us(tLBSY)
4) Lock Block Boundaries after Unlock Command issuing
- If Start Block address = 0000h and End Block Address = FFFFh , the device is all unlocked
- If Start Block address = End Block Address = FFFFh , the device is all locked except for the last Block
- If Start Block address = End Block Address = 0000h , the device is all locked except for the first Block
2. Block lock Status Read
Block Lock Status can be read on a block basis to find out whether designated block is available to be programmed or
erased. After writing 7Ah command to the command register and block address to be checked, a read cycle outputs
the content of the Block Lock Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. RE
or CE does not need to be toggled for updated status. Block Lock Status Read is prohibited while the device is busy
state.
Refer to table 15 for specific Status Register definitions. The command register remains in Block Lock Status Read
mode until further commands are issued to it.
In high state of PRE pin, write protection status can be checked by Block Lock Status Read (7Ah) while
in low state by Status Read (70h).
4.4 Power-On Auto-Read
The device is designed to offer automatic reading of the first page without command and address input sequence dur-
ing power-on.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activa-
tion of auto- page read function. Auto-page read function is enabled only when PRE pin is logic high state. Serial
access may be done after power-on without latency. Power-On Auto Read mode is available only on 3.3V device.
Rev 1.3 / Jun. 2006
18
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Parameter
Symbol
Min
Typ
Max
Unit
Valid Block Number
NVB
4016
4096
Blocks
Table 6: Valid Blocks Number
NOTE:
1. The 1st block is guaranteed to be a valid block up to 1K cycles without ECC. (1bit/512bytes)
Value
Symbol
Parameter
Unit
1.8V
3.3V
Ambient Operating Temperature (Commercial Temperature Range)
Ambient Operating Temperature (Extended Temperature Range)
Ambient Operating Temperature (Industrial Temperature Range)
Temperature Under Bias
0 to 70
0 to 70
-25 to 85
-40 to 85
℃
℃
℃
℃
℃
V
TA
-25 to 85
-40 to 85
TBIAS
TSTG
-50 to 125 -50 to 125
-65 to 150 -65 to 150
-0.6 to 2.7 -0.6 to 4.6
-0.6 to 2.7 -0.6 to 4.6
Storage Temperature
(2)
Input or Output Voltage
VIO
Vcc
Supply Voltage
V
Table 7: Absolute maximum ratings
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
the device at these or any other conditions above those indicated in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
Rev 1.3 / Jun. 2006
19
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
$ꢆꢃꢋaꢋ$ꢈ
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Figure 6: Block Diagram
Rev 1.3 / Jun. 2006
20
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
1.8Volt
Typ
3.3Volt
Typ
Parameter
Symbol
Test Conditions
Unit
Min
Max
Min
Max
tRC(1.8V=60ns,
3.3V=50ns)
CE=VIL, IOUT=0mA
Sequential
Read
ICC1
-
8
15
-
10
20
mA
Operating
Current
Program
Erase
ICC2
ICC3
-
-
-
-
8
8
15
15
-
-
10
10
20
20
mA
mA
CE=VIH,
WP=PRE=0V/Vcc
Stand-by Current (TTL)
Stand-by Current (CMOS)
ICC4
ICC5
-
-
-
1
-
-
1
mA
uA
CE=Vcc-0.2,
WP=PRE=0V/Vcc
10
50
10
50
Input Leakage Current
Output Leakage Current
ILI
VIN=0 to Vcc (max)
-
-
-
-
-
-
-
-
uA
uA
± 10
± 10
± 10
± 10
ILO
VOUT =0 to Vcc (max)
Vcc+0.
3
Vcc+0
.3
Input High Voltage
Input Low Voltage
VIH
VIL
-
Vcc-0.4
-
2
-
V
-
-0.3
-
-
0.4
-0.3
-
-
0.8
V
V
IOH=-100uA
IOH=-400uA
IOL=100uA
IOL=2.1mA
VOL=0.2V
VOL=0.4V
Vcc-0.1
-
-
-
2.4
-
-
-
Output High Voltage Level
Output Low Voltage Level
Output Low Current (R/B)
VOH
VOL
-
-
-
-
V
-
0.1
-
-
-
V
-
-
-
-
0.4
-
V
3
-
4
-
-
-
-
mA
mA
IOL
(R/B)
-
8
10
-
Table 8: DC and Operating Characteristics
Value
Parameter
1.8Volt
0V to Vcc
5ns
3.3Volt
0.4V to 2.4V
5ns
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Vcc / 2
1.5V
Output Load (1.7V - 1.95Volt & 2.7V - 3.3V)
Output Load (3.0V - 3.6V)
1 TTL GATE and CL=30pF
1 TTL GATE and CL=50pF
1 TTL GATE and CL=100pF
Table 9: AC Conditions
Rev 1.3 / Jun. 2006
21
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Item
Input / Output Capacitance
Input Capacitance
Symbol
CI/O
Test Condition
VIL=0V
Min
Max
10
Unit
pF
-
-
CIN
VIN=0V
10
pF
Table 10: Pin Capacitance (TA=25C, F=1.0MHz)
Parameter
Symbol
tPROG
tLBSY
Min
Typ Max
Unit
Program Time
-
-
-
-
-
200
500
10
1
us
us
Dummy Busy Time for the Lock or Lock-tight Block
Number of partial Program Cycles in the same page
Block Erase Time
5
-
Main Array
Spare Array
NOP
Cycles
Cycles
ms
NOP
-
2
tBERS
2
3
Table 11: Program / Erase Characteristics
Rev 1.3 / Jun. 2006
22
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
1.8Volt
Max
3.3Volt
Max
Parameter
Symbol
Unit
Min
0
Min
0
CLE Setup time
CLE Hold time
CE setup time
CE hold time
tCLS
tCLH
tCS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
10
0
10
0
tCH
10
40
0
10
25(1)
0
WE pulse width
ALE setup time
ALE hold time
Data setup time
Data hold time
Write Cycle time
WE High hold time
tWP
tALS
tALH
tDS
10
20
10
60
20
10
20
10
50
15
tDH
tWC
tWH
tR
Data Transfer from Cell to register
ALE to RE Delay
15
12
tAR
10
10
20
40
10
10
20
25
CLE to RE Delay
tCLR
tRR
Ready to RE Low
RE Pulse Width
tRP
WE High to Busy
tWB
tRC
100
100
Read Cycle Time
60
50
RE Access Time
tREA
tRHZ
tCHZ
tOH
tREH
tIR
40
30
20
30
30
20
RE High to Output High Z
CE High to Output High Z
RE or CE high to Output hold
RE High Hold Time
10
20
0
10
15
0
Output High Z to RE low
CE Access Time
tCEA
tWHR
tRB
45
45
WE High to RE low
50
50
Last RE High to busy (at sequential read)
CE High to Ready (in case of interception by CE at read)
100
100
(4)
(4)
tCRY
tCEH
tRST
80+tr(R/B#)
60+tr(R/B#)
CE High Hold Time (at the last serial read)(3)
Device Resetting Time (Read / Program / Erase)
Write Protection time
100
100
100
100
(2)
(2)
5/10/500
5/10/500
(5)
ns
tWW
Table 12: AC Timing Characteristics
NOTE:
1. If tCS is less than 10ns tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
2. If Reset Command (FFh) is written at Ready state, the device goes into Busy for maximum 5us
3. To break the sequential read cycle, CE must be held for longer time than tCEH.
4. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
5. Program / Erase Enable Operation : WP high to WE High.
Program / Erase Disable Operation : WP Low to WE High.
Rev 1.3 / Jun. 2006
23
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Pagae
Program
Block
Erase
IO
0
Read
NA
CODING
Pass / Fail
NA
Pass / Fail
NA
Pass: ‘0’ Fail: ‘1’
Pass: ‘0’ Fail: ‘1’
(Only for Cache Program, else Don’t care)
1
NA
2
3
4
5
6
NA
NA
NA
NA
NA
NA
-
-
NA
NA
NA
-
Ready/Busy
Ready/Busy
Ready/Busy
Ready/Busy
Ready/Busy
Ready/Busy
Active: ‘0’ Idle: ‘1’
Busy: ‘0’ Ready’: ‘1’
Protected: ‘0’
Not Protected: ‘1’
7
Write Protect
Write Protect
Write Protect
Table 13: Status Register Coding
DEVICE IDENTIFIER CYCLE
DESCRIPTION
1st
Manufacturer Code
Device Identifier
2nd
Table 14: Device Identifier Coding
1st cycle
(Manufacture Code)
2nd cycle
(Device Code)
Part Number
Voltage
Bus Width
HY27US08121A
HY27US16121A
HY27SS08121A
HY27SS16121A
3.3V
3.3V
1.8V
1.8V
X8
X16
X8
ADh
ADh
ADh
ADh
76h
56h
36h
46h
X16
Table 15: Read ID Table
Rev 1.3 / Jun. 2006
24
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Table 16: Lock Status Code
W&/+
W&+
W&/
6
&/(
W&6
&(
W:3
:(
W$/6
W$/+
$/(
W'6
W'+
,ꢀ2ꢋꢈaꢁ
&RPPDQG
Figure 7: Command Latch Cycle
Rev 1.3 / Jun. 2006
25
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
W&/6
&/(
W:&
W:&
W&6
W:&
&(
W:3
W:3
W:3
W:3
W'6
:(
W:+
W:+
W:+
W$/+ W$/+
W$/+ W$/+
W$/+ W$/+
W$/+
W'+
W$/6
$/(
,ꢀ2[
W'+
W'+
W'+
W'6
W'6
W'6
&ROꢂꢀ$GGꢁ
5RZꢀ$GGꢁ
5RZꢀ$GGꢃ
5RZꢀ$GGꢄ
Figure 8: Address Latch Cycle
Rev 1.3 / Jun. 2006
26
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
W&/+
W&+
&/(
&(
W$/6
W:&
$/(
W:3
W:3
W:3
:(
W:+
W'+
W:+
W'+
W'+
W'6
',1ꢀꢁ
W'6
',1ꢀILQDO
W'6
',1ꢀꢅ
,ꢀ2[
Figure 9. Input Data Latch Cycle
t
CEA
CE
t
CHZ*
t
REH
t
REA
t
REA
tREA
t
OH
t
RP
RE
t
RHZ
t
RHZ*
OH
t
I/Ox
Dout
Dout
Dout
t
RR
t
RC
R/B
Notes : Transition is measured ±±22mꢀ from steady state voltage with load.
This parameter is sampled and not 122% tested.
Figure 10: Sequential Out Cycle after Read (CLE=L, WE=H, ALE=L)
Rev 1.3 / Jun. 2006
27
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
W&/5
&/(
&(
W&/6
W&6
W&/+
W&+
W:3
:(
W&($
W&+=
W:+5
5(
W'+
W5($
W'6
ꢆꢅK
W,5
W5+=
,ꢀ2[
6WDWXVꢀ2XWSXW
Figure 11: Status Read Cycle
&/(
&(
W&(+
W&+=
W:&
:(
$/(
5(
W:%
W$5
W&5<
W5+=
W5
W5&
W53
ꢈꢈKꢋRUꢋꢈꢇK &ROꢌꢋ$GGꢇ 5RZꢋ$GGꢇ 5RZꢋ$GGꢆ 5RZꢋ$GGꢅ
'RXWꢋ1
'RXWꢋ1ꢍꢇ
'RXWꢋ1ꢍꢆ
'RXWꢋꢃꢆꢁ
,ꢀ2[
&ROXPQ
W5%
3DJHꢎ5RZꢏꢋ$GGUHVV
$GGUHVV
%XV\
5ꢀ%
Figure 12: Read1 Operation (Read One Page)
Rev 1.3 / Jun. 2006
28
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
&/(
&(
:(
W:%
W&+=
W$5
$/(
W5
W5&
5(
W55
ꢈꢈKꢋRUꢋꢈꢇK &ROꢌꢋ$GGꢇ 5RZꢋ$GGꢇ 5RZꢋ$GGꢆ 5RZꢋ$GGꢅ
'RXWꢋ1
'RXWꢋ1ꢍꢇ
'RXWꢋ1ꢍꢆ
,ꢀ2[
5ꢀ%
&ROꢌꢋ$GG
5RZꢋ$GG
%XV\
Figure 13: Read1 Operation intercepted by CE
&/(
&(
:(
W5
W:%
W$5
$/(
W55
5(
'RXW
ꢃꢈK
&ROꢌꢋ$GGꢇ 5RZꢋ$GGꢇ 5RZꢋ$GGꢆ 5RZꢋ$GGꢅ
'RXWꢋꢃꢆꢁ
,ꢀ2[
ꢃꢇꢇꢍ0
&ROꢌꢋ$GG
5RZꢋ$GG
5ꢀ%
5RZ
6HOHFWHG
0ꢋ$GGUHVV
$ꢈꢐ$ꢅꢑꢋ9DOLGꢋ$GGUHVV
$ꢄꢐ$ꢁꢑꢋ'RQW¶ꢋFDUH
ꢇꢂ
ꢃꢇꢆ
6WDUW
$GGUHVVꢋ0
Figure 14: Read2 Operation (Read One Page)
Rev 1.3 / Jun. 2006
29
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
&/(
&(
:(
$/(
5(
'RXW
1
'RXW
ꢃꢆꢁ
'RXW
ꢇ
'RXW
1ꢍꢇ
'RXW
ꢃꢆꢁ
'RXW
ꢈ
ꢈꢈK &ROꢌꢋ$GGꢇ 5RZꢋ$GGꢇ 5RZꢋ$GGꢆ 5RZꢋ$GGꢅ
,ꢀ2[
5ꢀ%
5HDG\
%XV\
%XV\
0
0ꢍꢇ
1
2XWSXW
2XWSXW
Figure 15: Sequential Row Read Operation Within a Block
Rev 1.3 / Jun. 2006
30
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
&/(
&(
W:&
W:&
W:&
:(
W:%
W352*
$/(
5(
'LQ
1
'LQ
0
,ꢉ2[
&ROꢂꢀ$GGꢁ
ꢁꢅK
ꢆꢅK
,ꢈ2R
ꢇꢅK
5RZꢀ$GGꢁ 5RZꢀ$GGꢃ 5RZꢀ$GGꢄ
6HULDOꢀ'DWD
3URJUDP
5HDGꢀ6WDWXV
&RPPDQG
&ROXPQ
$GGUHVV
5RZꢀ$GGUHVV
ꢃꢀXSꢀWRꢀꢄꢃꢅꢀ%\WH
6HULDOꢀ,QSXW
,QSXWꢀ&RPPDQG
&RPPDQG
5ꢉ%
,ꢁ2R ꢂꢀ6XFFHVVIXOꢀ3URJUDP
,ꢁ2R ꢃꢀ(UURUꢀLQꢀ3URJUDP
Figure 16: Page Program Operation
Rev 1.3 / Jun. 2006
31
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Figure 17 : Copy Back Program
Rev 1.3 / Jun. 2006
32
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
&/(
&(
W:&
:(
W:%
W%(56
$/(
5(
,ꢉ2
[
ꢂꢈK 5RZꢋ$GGꢇ 5RZꢋ$GGꢆ 5RZꢋ$GGꢅ 'ꢈK
ꢁꢈK
,ꢀ2ꢈ
3DJHꢎ5RZꢏꢋ$GGUHVV
5ꢉ%
%86<
$XWRꢋ%ORFNꢋ(UDVHꢋ6HWXSꢋ&RPPDQG
5HDGꢋ6WDWXV ,ꢀ2ꢈ ꢈꢋ6XFFHVVIXOꢋ(UDVH
&RPPDQG ,ꢀ2ꢈ ꢇꢋ(UURUꢋLQꢋ(UDVH
(UDVHꢋ&RPPDQG
Figure 18: Block Erase Operation (Erase One Block)
CLE
CE
WE
tAR
ALE
RE
tREA
90h
00h
ADh
76h
I/O x
Read ID Command Address 1 cycle
Maker Code Device Code
Figure 19: Read ID Operation
Rev 1.3 / Jun. 2006
33
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
:3
&/(
&(
:(
,ꢉ2[
ꢆ$K
/RFNꢋ&RPPDQG
Figure 20: Lock Command
:3
&/(
&(
:(
$/(
$GGꢌꢇ
$GGꢌꢆ
$GGꢌꢅ
ꢆꢅK
$GGꢌꢇ
$GGꢌꢆ
$GGꢌꢅ
ꢆꢄK
,ꢉ2[
8QRFNꢋ&RPPDQG
6WDUWꢋ%ORFNꢋ$GGUHVVꢋꢅF\FOHV
8QORFNꢋ&RPPDQG
(QGꢋ%ORFNꢋ$GGUHVVꢋꢅF\FOHV
Figure 21: Unlock Command Sequence
Rev 1.3 / Jun. 2006
34
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
:3
&/(
&(
:(
,ꢉ2[
ꢆ&K
/RFNꢐWLJKWꢋ&RPPDQG
Figure 22: Lock Tight Command
:3
&/(
&(
:(
$/(
W:+5
5(
ꢆ$K
$GGꢀꢁ
$GGꢀꢃ
'RXW
$GGꢀꢄ
,ꢉ2[
%ORFNꢀ$GGUHVVꢀꢄF\FOH
5HDGꢀ%ORFNꢀ/RFN
VWDWXVꢀ&RPPDQG
%ORFNꢀ/RFNꢀ6WDWXV
Figure 23: Lock Status Read Timing
Rev 1.3 / Jun. 2006
35
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
1.8V
Vcc
WE
CE
ALE
CLE
tR
R/B
PRE
RE
Last
Data1 Data2 Data3
Data
I/Ox
Data Output
Figure 24: Automatic Read at Power On
:(
$/(
&/(
5(
,2ꢁꢏꢀ
5ꢉ%
))K
W
567
Figure 25: Reset Operation
Rev 1.3 / Jun. 2006
36
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
9FF
97+
W
:3
:(
ꢃꢂXV
Figure 26: Power On/Off Timing
VTH = 1.5 Volt for 1.8 Volt Supply devices; 2.5 Volt for 3.3 Volt Supply devices
Rev 1.3 / Jun. 2006
37
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
5S
LEXV\
9FF
5HDG\
9FF
5ꢁ%
ꢆꢌꢈ9
RSHQꢀGUDLQꢀRXWSXW
ꢈꢌꢉ9
%XV\
WI
WU
*1'
'HYLFH
ꢋꢋ)LJꢌꢋ5SꢋYVꢋWUꢒꢋWIꢋꢓꢋ5SꢋYVꢋLEXV\
#ꢀ9FFꢀ ꢀꢆꢇꢆ9ꢈꢀ7Dꢀ ꢀꢅꢄ&ꢈꢀ& ꢃꢂꢂS)
/
ꢅꢌꢅ
ꢅꢉꢇ
LEXV\
ꢆꢊꢈ
ꢇꢌꢇ
ꢅꢈꢈQ
ꢆꢈꢈQ
ꢇꢈꢈQ
ꢅP
ꢇꢌꢂꢃ
ꢇꢉꢊ
ꢆP
ꢇP
ꢊꢂ
ꢈꢌꢉꢆꢃ
ꢄꢌꢆ
ꢄꢌꢆ
ꢇN
ꢄꢌꢆ
ꢆN
ꢄꢌꢆ
WI
ꢅN
ꢄN
5SꢋꢎRKPꢏ
5SꢋYDOXHꢋJXLGHQFH
9FFꢋꢎ0D[ꢌꢏꢋꢐꢋ92/ꢋꢎ0D[ꢌꢏ
ꢅꢌꢆ9
5SꢋꢎPLQꢏꢋ
,2/ꢋꢍꢋ,
/
ꢉP$ꢋꢍꢋ,
/
ZKHUHꢋ,/ꢋLVꢋWKHꢋVXPꢋRIꢋWKHꢋLQSXWꢋFXUUQWVꢋRIꢋDOOꢋGHYLFHVꢋWLHGꢋWRꢋWKHꢋ5ꢀ%ꢋSLQꢌ
5SꢎPD[ꢏꢋLVꢋGHWHUPLQHGꢋE\ꢋPD[LPXPꢋSHUPLVVLEOHꢋOLPLWꢋRIꢋWU
Figure 27: Ready/Busy Pin electrical specifications
Rev 1.3 / Jun. 2006
38
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Figure 28: Lock/Unlock FSM Flow Cart
[ꢇꢂꢋ'HYLFHV
$UHDꢋ$
ꢎꢈꢈKꢏ
[ꢉꢋ'HYLFHV
$UHDꢋ&
ꢎꢃꢈKꢏ
$UHDꢋ$
ꢎꢈꢈKꢏ
$UHDꢋ%
ꢎꢈꢇKꢏ
$UHDꢋ&
ꢎꢃꢈKꢏ
%\WHVꢋꢈꢐꢆꢃꢃ
%\WHVꢋꢆꢃꢂꢐꢆꢂꢅ
%\WHVꢋꢈꢐꢆꢃꢃ
%\WHVꢋꢆꢃꢂꢐꢃꢇꢇ
%\WHVꢋꢃꢇꢆꢐꢃꢆꢁ
3DJHꢋ%XIIHU
3DJHꢋ%XIIHU
$
&
$
%
&
3RLQWHU
ꢎꢈꢈKꢒꢃꢈKꢏ
3RLQWHU
ꢎꢈꢈKꢒꢈꢇKꢒꢃꢈKꢏ
Figure 29: Pointer operations
Rev 1.3 / Jun. 2006
39
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
$5($ꢋ$
$GGUHVV
,QSXWV
$GGUHVV
,ꢀ2
,ꢀ2
ꢈꢈK
ꢉꢈK
'DWDꢋ,QSXW
ꢇꢈK
ꢈꢈK
ꢉꢈK
'DWDꢋ,QSXW
ꢇꢈK
,QSXWV
$UHDVꢋ$ꢒꢋ%ꢒꢋ&ꢋFDQꢋEHꢋSURJUDPPHGꢋGHSHQGLQJꢋRQꢋKRZꢋPXFKꢋGDWDꢋLVꢋLQSXWꢌꢋ6XEVHTXHQWꢋꢈꢈKꢋFRPPDQGVꢋFDQꢋEHꢋRPLWWHGꢌ
$5($ꢋ%
$GGUHVV
,QSXWV
$GGUHVV
,QSXWV
ꢈꢇK
ꢉꢈK
'DWDꢋ,QSXW
ꢇꢈK
ꢈꢇK
ꢉꢈK
'DWDꢋ,QSXW
ꢇꢈK
$UHDVꢋ%ꢒꢋ&ꢋFDQꢋEHꢋSURJUDPPHGꢋGHSHQGLQJꢋRQꢋKRZꢋPXFKꢋGDWDꢋLVꢋLQSXWꢌꢋ7KHꢋꢈꢇKꢋFRPPDQGꢋPXVWꢋEHꢋUHꢐLVVXHGꢋEHIRUHꢋHDFKꢋSURJUDPꢌ
$5($ꢋ&
$GGUHVV
,QSXWV
$GGUHVV
,QSXWV
,ꢀ2
ꢃꢈK
ꢉꢈK
'DWDꢋ,QSXW
ꢇꢈK
ꢃꢈK
ꢉꢈK
'DWDꢋ,QSXW
ꢇꢈK
2QO\ꢋ$UHDVꢋ&ꢋFDQꢋEHꢋSURJUDPPHGꢌꢋ6XEVHTXHQWꢋꢃꢈKꢋFRPPDQGꢋFDQꢋEHꢋRPLWWHGꢌ
Figure 30: Pointer Operations for porgramming
Rev 1.3 / Jun. 2006
40
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
System Interface Using CE don’t care
To simplify system interface, CE may be inactive during data loading or sequential data-reading as shown below. So, it is possible to
connect NAND Flash to a microprocessor. The only function that was removed from standard NAND Flash to make CE don't care read
operation was disabling of the automatic sequential read function.
&/(
&(ꢋGRQ¶WꢐFDUH
&(
:(
$/(
ꢉꢈK
6WDUWꢋ$GGꢌꢎꢄ&\FOHꢏ
'DWDꢋ,QSXW
'DWDꢋ,QSXW
ꢇꢈK
,ꢉ2[
Figure 31: Program Operation with CE don’t-care.
&/(
&(
,IꢋVHTXHQWLDOꢋURZꢋUHDGꢋHQDEOHGꢒ
&(ꢋPXVWꢋEHꢋKHOGꢋORZꢋGXULQJꢋW5ꢌ
&(ꢋGRQ¶WꢐFDUH
5(
$/(
5ꢀ%
W5
:(
,ꢀ2[
ꢈꢈK
6WDUWꢋ$GGꢌꢎꢄ&\FOHꢏ
'DWDꢋ2XWSXWꢎVHTXHQWLDOꢏ
Figure 32: Read Operation with CE don’t-care.
Rev 1.3 / Jun. 2006
41
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Bad Block Management
Devices with Bad Blocks have the same quality level and the same AC and DC characteristics as devices where all the
blocks are valid. A Bad Block does not affect the performance of valid blocks because it is isolated from the bit line and
common source line by a select transistor. The devices are supplied with all the locations inside valid blocks
erased(FFh).
The Bad Block Information is written prior to shipping. Any block where the 6th Byte/ 3rd Word in the spare area of
the 1st or 2nd page (if the 1st page is Bad) does not contain FFh is a Bad Block. The Bad Block Information must be
read before any erase is attempted as the Bad Block Information may be erased. For the system to be able to recog-
nize the Bad Blocks based on the original information it is recommended to create a Bad Block table following the flow-
chart shown in Figure 20. The 1st block, which is placed on 00h block address is guaranteed to be a valid block.
Block Replacement
Over the lifetime of the device additional Bad Blocks may develop. In this case the block has to be replaced by copying
the data to a valid block. These additional Bad Blocks can be identified as attempts to program or erase them will give
errors in the Status Register.
As the failure of a page program operation does not affect the data in other pages in the same block, the block can be
replaced by re-programming the current data and copying the rest of the replaced block to an available valid block.
The Copy Back Program command can be used to copy the data to a valid block.
See the “Copy Back Program” section for more details.
Refer to Table 17 for the recommended procedure to follow if an error occurs during an operation.
Operation
Erase
Recommended Procedure
Block Replacement
Program
Read
Block Replacement or ECC (with 1bit/512byte)
ECC (with 1bit/512byte)
Table 17: Block Failure
67$57
%ORFNꢋ$GGUHVV
%ORFNꢋꢈ
,QFUHPHQW
%ORFNꢋ$GGUHVV
8SGDWH
%DGꢋ%ORFNꢋWDEOH
'DWD
))K"
1R
1R
<HV
/DVW
EORFN"
<HV
(1'
Figure 33: Bad Block Management Flowchart
Rev 1.3 / Jun. 2006
42
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Write Protect Operation
The Erase and Program Operations are automatically reset when WP goes Low (tWW = 100ns, min). The operations
are enabled and disabled as follows (Figure 34~37)
:(
W
::
ꢉꢂK
,ꢁ2[
ꢃꢂK
5ꢁ%
Figure 34: Enable Programming
:(
W
::
ꢉꢂK
ꢃꢂK
,ꢁ2[
5ꢁ%
Figure 35: Disable Programming
Rev 1.3 / Jun. 2006
43
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
:(
W
::
ꢊꢂK
'ꢂK
,ꢁ2[
5ꢁ%
Figure 36: Enable Erasing
:(
W
::
ꢊꢂK
,ꢁ2[
'ꢂK
5ꢁ%
Figure 37: Disable Erasing
Rev 1.3 / Jun. 2006
44
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
ꢋꢉ
H
$ꢅ
$
'
%
/
Į
$ꢃ
ꢅꢋ
ꢅꢄ
',(
(ꢃ
(
&
&3
Figure 38: 48-pin TSOP1, 12 x 20mm, Package Outline
millimeters
Symbol
Min
Typ
Max
1.200
0.150
1.030
0.250
0.200
0.100
12.120
20.100
18.500
A
A1
A2
B
0.050
0.980
0.170
0.100
C
CP
D
11.910
19.900
18.300
12.000
20.000
18.400
0.500
E
E1
e
L
0.500
0
0.680
5
alpha
Table 18: 48-pin TSOP1, 12 x 20mm, Package Mechanical Data
Rev 1.3 / Jun. 2006
45
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
$
$ꢊ
(
$ꢃ
'
Į
&3
&ꢃ
Figure 39. 48-pin USOP1, 12 x 17mm, Package Outline
millimeters
Symbol
Min
Typ
Max
A
A1
A2
B
0.650
0.080
0.570
0.230
0.175
0.750
0.100
17.100
12.120
15.500
0
0.050
0.520
0.160
0.100
0.650
0.470
0.130
0.065
0.450
C
C1
CP
D
16.900
11.910
15.300
17.000
12.000
15.400
0.500
D1
E
e
alpha
0
8
Table 19: 48-pin USOP1, 12 x 17mm, Package Mechanical Data
Rev 1.3 / Jun. 2006
46
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
'
'ꢅ
'ꢃ
6'
)'ꢃ
)'
H
H
6(
(
(ꢅ (ꢃ
)(
)(ꢃ
%$//ꢀ³FS
$
´
H
E
$ꢅ
$ꢃ
Figure 40. 63-ball FBGA - 9 x 11 ball array 0.8mm pitch, Pakage Outline
NOTE: Drawing is not to scale.
Millimeters
Typ
Symbol
Min
0.80
0.25
0.55
0.40
8.90
Max
1.00
0.35
0.65
0.50
9.10
A
A1
A2
b
0.90
0.30
0.60
0.45
D
9.00
D1
D2
E
E1
E2
e
4.00
7.20
11.00
5.60
8.80
10.90
11.10
0.80
FD
FD1
FE
FE1
SD
SE
2.50
0.90
2.70
1.10
0.40
0.40
Table 20: 63-ball FBGA - 9 x 11 ball array 0.8mm pitch, Pakage Mechanical Data
Rev 1.3 / Jun. 2006
47
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
MARKING INFORMATION - TSOP1/USOP
P acka g
M ark in g E x am p le
K
2
O
X
R
A
T S O P 1
/
H
x
Y
x
2
x
7
x
x
S
x
x
1
U S O P
Y
W
W
x
x
- h yn ix
- K O R
: H ynix Sym bol
: O rigin Country
: Part N um ber
- H Y 2 7 x S x x1 2 x A x xx x
H Y : H YN IX
2 7 : N AN D Flash
x: Pow er Supply
S : Classification
x x: Bit O rganization
1 2 : D ensity
: U (2.7V~ 3.6V), L(2.7V), S(1.8V)
: Single Level Cell+ Single D ie+ Sm all Block
: 08(x8), 16(x16)
: 512M bit
: 1(1nCE & 1R/nB; Sequential Row Read enable)
2(1nCE & 1R/nB; Sequential Row Read D isable)
: 2nd G eneration
x : M ode
A : Version
x: Package Type
x: Package M aterial
: T(48-TSO P1), S(48-U SO P)
: Blank(N orm al), P(Lead Free)
: C(0℃ ~ 70℃ ), E(-25℃ ~ 85℃ )
M (-30℃ ~ 85℃ ), I(-40℃ ~ 85℃ )
: B(Included Bad Block), S(1~ 5 Bad Block),
P(All G ood Block)
x: O perating Tem perature
x: Bad Block
- Y : Year (ex: 5= year 2005, 06= year 2006)
- w w : W ork W eek (ex: 12= w ork w eek 12)
- xx : Process Code
N o te
- C ap ita l Le tte r
: Fixed Item
- S m all Letter
: N on-fixed Item
Rev 1.3 / Jun. 2006
48
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
MARKING INFORMATION - FBGA
Packag
M arking Exam ple
K
2
O
x
R
A
H
x
Y
x
2
x
7
x
x
S
x
x
1
FBGA
Y
W
W
x
x
- hynix
- KOR
: Hynix Symbol
: Origin Country
: Part Number
- HY27xSxx12xA xxxx
HY: HYNIX
27: NAND Flash
x: Power Supply
S: Classification
xx: Bit Organization
12: Density
: U(2.7V~3.6V), L(2.7V), S(1.8V)
: Single Level Cell+Single Die+Small Block
: 08(x8), 16(x16)
: 512Mbit
x: Mode
: 1(1nCE & 1R/nB; Sequential Row Read Enable)
2(1nCE & 1R/nB; Sequential Row Read Disable)
A: Version
: 2nd Generation
: F(63FBGA)
x: Package Type
: Blank(Normal), P(Lead Free)
: C(0℃ ~70℃ ), E(-25℃ ~85℃ )
M(-30℃ ~85℃ ), I(-40℃ ~85℃ )
: B(Included Bad Block), S(1~5 Bad Block),
P(All Good Block)
x: Package Material
x: Operating Temperature
x: Bad Block
- Y: Year (ex: 5=year 2005, 06= year 2006)
- ww: Work Week (ex: 12= work week 12)
- xx: Process Code
Note
- Capital Letter
- Sm all Letter
: Fixed Item
: Non-fixed Item
Rev 1.3 / Jun. 2006
49
相关型号：
HY27US16122B-TPCP
Flash, 32MX16, 18ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48
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