ESJA02-20 [HVGT]
20mA 20kV HIGH VOLTAGE, SILICON RECTIFIER DIODES;
| 型号： | ESJA02-20 |
| 厂家： | 
GETAI ELECTRONIC DEVICE CO.,LTD |
| 描述： | 20mA 20kV HIGH VOLTAGE, SILICON RECTIFIER DIODES 高压 |
| 文件： | 总1页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HVGT
ESJA02-20
20mA 20kV HIGH VOLTAGE, SILICON RECTIFIER DIODES
Outline Drawings : mm
ESJA02-20 is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
DO-415
Cathode Mark
o 4.2
Lot No.
o 0.8
Features
High speed switching
High Current
High surge resisitivity for CRT discharge
25 min.
15
25 min.
High reliability design
High Voltage
Cathode Mark
Applications
X light Power supply
Laser
Type
Mark
Voltage doubler circuit
Microwave emission power
ESJA02-20
ESJA02-20
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Symbols
VRRM
IO
Items
Condition
ESJA02-20
Units
kV
20
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
mA
20
Ta=25°C,Resistive Load
IFSM
1.5
peak
A
125
j
Junction Temperature
T
°C
°C
°C
120
Allowable Operation Case Temperature
Storage Temperature
Tc
Tstg
-40 to +125
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
VF
Conditions
ESJA02-20
40
Units
Maximum Forward Voltage Drop
Maximum Reverse Current
V
at 25°C,IF =IF(AV)
at 25°C,VR =VRRM
IR1
uA
3.0
30
IR2
R
at 100°C,V
uA
nS
RRM
=V
Maximum Reverse Recovery Time
Junction Capacitance
Trr
at 25°C
100
1.0
Cj
at 25°C,VR=0V,f=1MHz
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com E-mail:sales@getedz.com
2015
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