HIT640 [HUTSON]

4 Quadrant Logic Level TRIAC, 600V V(DRM), 40A I(T)RMS, TO-218,;
HIT640
型号: HIT640
厂家: HUTSON INDUSTRIES, INC.    HUTSON INDUSTRIES, INC.
描述:

4 Quadrant Logic Level TRIAC, 600V V(DRM), 40A I(T)RMS, TO-218,

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MAXIMUM RATINGS  
SYMBOL  
VDRM  
DEVICE NUMBERS  
UNITS  
ISOLATED  
200  
400  
600  
HIT216  
HIT416  
HIT616  
HIT225  
HIT425  
HIT625  
HIT240  
HIT440  
HIT640  
Repetitive Peak Off-State Voltage (1)  
VDRM  
VOLT  
Gate Open, and T J = 110° C  
NONISOLATED  
200  
400  
600  
HNT216  
HNT416  
HNT616  
HNT225  
HNT425  
HNT625  
HNT240  
HNT440  
HNT640  
RMS On-State Current at Tc = 80 ° C and  
Conduction Angle of 360°  
It(RMS)  
ITSM  
16.0  
160  
25.0  
250  
40.0  
400  
AMP  
AMP  
Peak Surge (Non-Repetitive) On-State  
Current, One-Cycle, at 50Hz or 60 Hz  
Peak Gate-Trigger Current for 3µsec. Max.  
Peak Gate-Power Dissipation at IGT < IGTM  
Average Gate-Power Dissipation  
IGTM  
PGM  
4
40  
0.8  
4
40  
0.8  
4
40  
0.8  
AMP  
WATT  
WATT  
PG(AV)  
Storage Temperature Range  
Operating Temperature Range, Tj  
Tstg  
Toper  
-40 to +150  
-40 to +110  
°C  
°C  
ELECTRICAL CHARACTERISTICS  
At Specified Case Temperatures  
Peak Off-State Current, (1) Gate Open  
TC = 110° C VDRM = Max. Rating  
Maximum On-State Voltage, (1) at Tc=25°C  
and IT = Rated Amps  
mA  
MAX.  
VOLT  
MAX  
mA  
IDRM  
VTM  
IHO  
0.5  
1.8  
0.5  
1.8  
0.5  
1.8  
DC Holding Current, (1) Gate Open and TC = 25°C  
100  
200  
100  
200  
100  
200  
MAX.  
Critical Rate-Of-Rise of Off-State Voltage, (1)  
for VD = VDRM Gate Open, TC = 110°C  
Critical  
dv/dt  
Commutating  
dv/dt  
V/µsec.  
V/µsec.  
Critical Rate-Of-Rise Of Communication Voltage, (1) at TC =  
80° C, Gate Unenergized, VD = VDRM, IT = IT (RMS)  
5
5
5
DC Gate - Trigger Current for VD = 12VDC,  
RL = 60 OHM and at TC = 25° C  
(T2 + GATE + T2 - GATE-) Quads 1 & 3  
(T2 + GATE - T2 - GATE +) Quads 2 & 4  
100 I, II,III  
150 IV  
100 I, II,III  
150 IV  
100 I, II,III  
150 IV  
mA  
MAX.  
IGTM  
VGT  
Tgt  
DC Gate-Trigger Voltage for VD = 12VDC,  
RL = 30 OHM and at TC = 25°C  
VOLT  
MAX  
2.5  
3
2.5  
3
2.5  
3
Gate-Controlled Turn-on Time for  
VD=VDRM, IGT = 200mA  
tR =0.1 µsec.,  
µsec.  
IT = 10A (Peak) and TC = 25°C  
Thermal Resistance, Junction-to-Case  
ISOLATED  
Thermal Resistance, Junction-to-Case  
NONISOLATED  
°C/WATT  
TYP  
°C/WATT  
TYP  
1.4  
1.1  
0.95  
RqJ-C  
RqJ-C  
(1.2)  
(1.0)  
(0.91)  
Notes:  
(1) All Values Apply in either direction  
*All Hutson Isolated TO-218 devices are  
UL recognized. UL Number E95589 (N)  
SOLID STATE CONTROL DEVICES  
20  
CURRENT WAVEFORM:  
SINUSOIDIAL, 60Hz  
RESISTIVE LOAD  
I t(RMS) = RATED AMPS at 80° Tc  
GATE CONTROL MAY BE LOST DURING AND AFTER SURGE.  
GATE CONTROL WILL BE REGAINED AFTER Tj RETURNS TO  
STEADY STATE VALUE.  
SOLID STATE CONTROL DEVICES  
21  

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