HC4054 [HUASHAN]
NPN SILICON TRANSISTOR; NPN硅晶体管
| 型号： | HC4054 |
| 厂家： | 
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
| 描述： | NPN SILICON TRANSISTOR |
| 文件： | 总1页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN DARLINGTON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
HC4054
█ APPLICATIONS
Switching Power .
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-220
Tstg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -65~150℃
Tj— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃
PC— — Collector Dissipation（Tc=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 30W
VCBO — — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 600V
VCEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 450V
VEBO — — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 7V
IC— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 5A
IB— — Base Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 2A
1―Base，B
2―Collector，C
3―Emitter, E
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BVCEO(SUS) Collector-Emitter Sustaining Voltage
IC=100mA, IB=0
VCB=600V, IE=0
VEB=7V, IC=0
450
V
ICBO
IEBO
Collector Cutoff Current
Emitter-Base Cutoff Current
Collector Cutoff Current
DC Current Gain
0.1 mA
0.1 mA
0.1 mA
ICEO
VCE=450V, IB=0
VCE=5V, IC=2.5A
VCE=5V, IC=1mA
IC=2.5A, IB=0.5A
IC=2.5mA, IB=0.5A
HFE（1）
HFE（2）
VCE(sat1)
VBE(sat)
fT
10
5
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Turn-On Time
1
V
1.5 V
20
MHz VCE=10V Ic=0.5A,
tON
0.5 μS
Ic=2.5A,
IB1=0.5A IB2=1A
VBB2=4V,RL=60Ω
tSTG
Storage Time
2 μS
tF
Fall Time
0.2 μS
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