HA114E [HUASHAN]
PNP SILICON TRANSISTOR; PNP硅晶体管型号: | HA114E |
厂家: | SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
描述: | PNP SILICON TRANSISTOR |
文件: | 总2页 (文件大小:176K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PNP S I LI C O N TRAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HA114E
█ SWITCHING CIRCUIT,INVERTER,
INTERFACE CIRCUIT,DRIVER CIRCUIT
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-92S
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………300mW
VCBO——Collector-Base Voltage………………………………-50V
VCEO——Collector-Emitter Voltage……………………………-50V
VEBO——Emitter-Base Voltage………………………………-10V
IC——Collector Current……………………………………-100mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
1―Emitter,E
2―Collector,C
3―Base,B
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Min
-50
-50
Typ
Max
Unit
V
Test Conditions
BVCBO
BVCEO
ICBO
IC=-10μA, IE=0
IC=-0.1mA, IB=0
V
-0.1 μA VCB=-40V, IE=0
-0.5 μA VCE=-40V, IB=0
Collector Cut-off Current
ICEO
IEBO
Emitter Cut-off Current
-195 -250 -360 μA VEB=-5V, IC=0
HFE
DC Current Gain
30
VCE=-5V, IC=-5mA
VCE(sat)
Collector- Emitter Saturation Voltage
-0.1 -0.3 V
IC=-10mA, IB=-0.5mA
VCE=-5V, IC=-0.1mA
VCE=-0.2V, IC=-10mA
VI(off) Input Off Voltage
-0.8 -1.1 -1.5 V
-1.0 -2.0 -4.0 V
7.0 10 13 Kohm
0.8 1.0 1.2
VI(on) Input On Voltage
R1
Input Resistor
R2/R1 Resistor Ratio
Current Gain-Bandwidth Product
fT
250
MHz
VCE=-10V, IC=-5mA
Shantou Huashan Electronic Devices Co.,Ltd.
HA114E
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