H984 [HUASHAN]
PNP SILICON TRANSISTOR; PNP硅晶体管
| 型号： | H984 |
| 厂家： | 
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
| 描述： | PNP SILICON TRANSISTOR |
| 文件： | 总1页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP S I LI C O N TRAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H984
█ APPLICATIONS
Low frequency power amplifier Applications.
TO-92
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
T
stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃
Tj— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃
PC— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 600mW
1―Emitter，E
2―Collector，C
3―Base，B
V
V
V
CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -60V
CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -50V
EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -5V
IC— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -500mA
ICP— — Collector Curren（t Pulse）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -800mA
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Min
Typ
Max Unit
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVCBO
BVCEO
BVEBO
ICBO
-60
-50
-5
V
V
V
IC=-10μA, IE=0
IC=-1mA, IB=0
IE=-10μA，IC=0
-1.0 μA VCB=-40V, IE=0
-1.0 μA VEB=-4V, IC=0
IEBO
Emitter Cut-off Current
HFE(1)
HFE(2)
DC Current Gain
60
35
320
VCE=-5V, IC=-50mA
VCE=-5V, IC=-400mA
IC=-400mA, IB=-40mA
IC=-400mA, IB=-40mA
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
-0.2 -0.6 V
-0.9 -1.2 V
Current Gain-Bandwidth Product
fT
120
5
MHz VCE=-10V, IC=-10mA
pF VCB=-10V, f=1MHz
Cob
Output Capacitance
█ hFE Classification
D
E
F
60— 120
1200— 200
160— 320
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