MMSTA56 [HTSEMI]
TRANSISTOR(PNP); 晶体管（ PNP ）
| 型号： | MMSTA56 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR(PNP) |
| 文件： | 总1页 (文件大小：402K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMSTA56
TRANSISTOR(PNP)
SOT–323
FEATURES
Small Surface Mount Package
General Poupose for Amplification
MARKING:K2G
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1. BASE
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
2. EMITTER
Collector-Base Voltage
-80
3. COLLECTOR
Collector-Emitter Voltage
Emitter-Base Voltage
-80
V
-4
V
Collector Current
-500
200
mA
mW
℃/W
℃
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
PC
625
RΘJA
Tj
150
Storage Temperature
Tstg
-55～+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
V(BR)CBO
IC=-100µA, IE=0
-80
V
Collector-base breakdown voltage
V(BR)CEO
V(BR)EBO
ICBO
IC=-1mA, IB=0
-80
-4
V
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IE=-100µA, IC=0
VCB=-80V, IE=0
-100
-0.5
nA
nA
IEBO
VEB=-4V, IC=0
Emitter cut-off current
VCE=-1V, IC=-10mA
VCE=-1V, IC=-100mA
IC=-100mA, IB=-10mA
VCE=-1V, IC=-100mA
VCE=-1V,IE=-100mA , f=100MHz
50
50
hFE
DC current gain
VCE(sat)
VBE
-0.25
-1.2
V
V
Collector-emitter saturation voltage
Base-emitter voltage
fT
50
MHz
Transition frequency
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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