MMBTA43 [HTSEMI]
TRANSISTOR(NPN); 晶体管（ NPN ）
| 型号： | MMBTA43 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR(NPN) |
| 文件： | 总1页 (文件大小：566K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA43
TRANSISTOR(NPN)
SOT–23
FEATURES
High Voltage Application
Telephone Application
Complementary to MMBTA93
MARKING:ABX
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
200
V
Collector-Emitter Voltage
Emitter-Base Voltage
200
V
5
Collector Current
500
mA
mW
℃/W
℃
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
350
PC
RΘJA
Tj
357
150
Storage Temperature
Tstg
-55～+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
V
V(BR)CBO IC=0.1mA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=0.1mA, IC=0
200
200
5
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V
V
hFE(1)
hFE(2)
hFE(3)
*
*
*
VCE=10V, IC=10mA
VCE=10V, IC=1mA
40
40
40
DC current gain
VCE=10V, IC=30mA
IC=20mA, IB=2mA
VCE(sat)
VBE(sat)
fT
*
0.5
0.9
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
*
IC=20mA, IB=2mA
VCE=20V,IE=10mA, f=100MHz
VCB=20V, IE=0, f=1MHz
50
MHz
pF
Cob
4
Collector output capacitance
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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