BC847S [HTSEMI]
Multi-chip transistor (NPN); 多芯片晶体管（ NPN型）
| 型号： | BC847S |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | Multi-chip transistor (NPN) |
| 文件： | 总2页 (文件大小：639K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC847S
Multi-chip transistor (NPN)
SOT-363
APPLICATION
C1
B2
E2
This device is designed for general purpose amplifier applications
Marking :1C
E1
B1
C2
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
50
45
V
Collector-Emitter Voltage
Emitter-Base Voltage
6
Collector Current-Continuous
Power Dissipation
200
mA
PD
200
mW
RθJA
Tj
Thermal Resistance. Junction to Ambient
Junction Temperature
625
℃/W
150
℃
Tstg
Storage Temperature Range
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CBO
IC=10µA,IE=0
IC=1mA,IB=0
IE=10µA,IC=0
50
45
6
V
V
V
V(BR)CEO
V(BR)EBO
Collector cut-off current
Emitter cut-off current
DC current gain*
ICBO
VCB=30V,IE=0
VEB =4V , IC=0
VCE=5V,IC=2mA
15
15
nA
IEBO
hFE
110
630
0.25
0.65
0.7
VCE(sat)(1) IC=10mA,IB=0.5mA
VCE(sat)(2) IC=100mA,IB=5mA
V
V
Collector-emitter saturation voltage
Base-emitter voltage
VBE(1)
VBE(2)
fT
VCE=5V,IC=2mA
0.58
V
VCE=5V,IC=10mA
0.77
V
Transition frequency
VCE=5V,IC=20mA ,f=100MHz
VCB=10V,IE=0,f=1MHz
200
2
MHz
pF
Collector output capacitance
Cob
*pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
BC847S
Typical Characteristics
IC —— VCE
hFE —— IC
50
1000
COMMON EMITTER
Ta=25 oC
COMMON EMITTER
VCE=5V
Ta=100 o
C
40
100uA
90uA
300
100
Ta=25 o
C
80uA
30
70uA
60uA
50uA
20
40uA
30uA
30
10
10
0
20uA
IB=10uA
3
200
200
100
150
0
10
20
30
40
50
200
1.0
1
1
1
0
10
30
100
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
VBEsat —— IC
VCEsat —— IC
1000
1000
900
COMMON EMITTER
IC/IB=20
Ta=25 o
C
800
700
600
500
Ta=100 o
C
300
100
400
300
Ta=100 o
C
Ta=25 o
C
200
100
30
10
COMMON EMITTER
IC/IB=20
3
30
3
1
10
100
10
100
30
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
IC —— VBE
Cob —— VCB
100
10
9
VCE=5V
Ta=25 oC
f=1MHz
IE=0
Ta=25 oC
8
7
30
10
6
5
4
3
3
1
2
1
0.3
0.1
30
0.0
0.2
0.4
0.6
0.8
10
3
BASE-EMMITER VOLTAGE VBE (V)
COLLECTOR-BASE VOLTAGE VCB (V)
PC —— Ta
fT —— IC
1000
300
250
200
150
100
50
300
100
30
10
COMMON EMITTER
VCE=5V
Ta=25 oC
0
25
50
75
100
125
1
10
100
3
30
AMBIENT TEMPERATURE Ta (oC)
COLLECTOR CURRENT IC (mA)
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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