BC847C [HTSEMI]

TRANSISTOR (NPN); 晶体管( NPN )
BC847C
型号: BC847C
厂家: SHENZHEN JIN YU SEMICONDUCTOR CO., LTD.    SHENZHEN JIN YU SEMICONDUCTOR CO., LTD.
描述:

TRANSISTOR (NPN)
晶体管( NPN )

晶体 晶体管 光电二极管 放大器
文件: 总4页 (文件大小:1930K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC846A,B /BC847A, B, C /BC848A, B, C  
TRANSISTOR (NPN)  
SOT-23  
FEATURES  
z
Ideally suited for automatic insertion  
z
For Switching and AF Amplifier Applications  
1. BASE  
2. EMITTER  
3. COLLECTOR  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
VCBO  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
80  
50  
30  
BC846  
BC847  
BC848  
VCEO  
Collector-Emitter Voltage  
V
65  
45  
BC846  
BC847  
BC848  
30  
VEBO  
IC  
Emitter-Base Voltage  
6
V
A
Collector Current –Continuous  
Collector Power Dissipation  
Junction Temperature  
0.1  
PC*  
TJ  
200  
150  
-65-150  
mW  
Tstg  
Storage Temperature  
DEVICE MARKING  
BC846A=1A; BC846B=1B;  
BC847A=1E; BC847B=1F; BC847C=1G;  
BC848A=1J; BC848B=1K: BC848C=1L  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  
BC846A,B /BC847A, B, C /BC848A, B, C  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
VCBO  
Test conditions  
IC= 10µA, IE=0  
MIN  
80  
50  
30  
65  
45  
30  
6
TYP MAX UNIT  
Collector-base breakdown voltage  
BC846  
BC847  
BC848  
BC846  
BC847  
BC848  
V
Collector-emitter breakdown voltage  
VCEO  
VEBO  
ICBO  
IC= 10mA, IB=0  
IE= 10µA, IC=0  
V
V
Emitter-base breakdown voltage  
Collector cut-off current  
BC846  
BC847  
BC848  
BC846  
BC847  
BC848  
VCB=70 V , IE=0  
VCB=50 V , IE=0  
VCB=30 V , IE=0  
0.1  
0.1  
μA  
Collector cut-off current  
V
CE=60 V , IB=0  
VCE=45 V , IB=0  
CE=30 V , IB=0  
ICEO  
IEBO  
hFE  
μA  
μA  
V
Emitter cut-off current  
DC current gain  
VEB=5 V , IC=0  
0.1  
220  
450  
800  
0.5  
BC846A,847A,848A  
BC846B,847B,848B  
BC847C,BC848C  
110  
200  
420  
VCE= 5V, IC= 2mA  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
V
CE(sat) IC=100mA, IB= 5mA  
V
V
VBE(sat) IC=100mA, IB= 5mA  
1.1  
VCE= 5 V, IC= 10mA  
Transition frequency  
100  
MHz  
pF  
fT  
f=100MHz  
Collector output capacitance  
Cob  
VCB=10V,f=1MHz  
4.5  
2
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  
BC846A,B /BC847A, B, C /BC848A, B, C  
Typical Characteristics  
3
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  
BC846A,B /BC847A, B, C /BC848A, B, C  
4
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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