BC807-16W [HTSEMI]
TRANSISTOR (PNP); 晶体管（ PNP ）
| 型号： | BC807-16W |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR (PNP) |
| 文件： | 总2页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC807W
TRANSISTOR (PNP)
BC807-16W
BC807-25W
BC807-40W
SOT-23
FEATURES
1. BASE
·Ldeally suited for automatic insertion
·epitaxial planar die construction
·complementary NPN type available(BC817)
2. EMITTER
3. COLLECTOR
MARKING: 807-16:5A; 807-25:5B; 807-40:5C
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-50
-45
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-0.5
0.3
A
PC
W
℃
℃
Tj
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Test conditions
IC= -10μA, IE=0
IC= -10mA, IB=0
IE= -1μA, IC=0
VCB= -45V, IE=0
VCE= -40V, IB=0
VEB= -4 V, IC=0
MIN
-50
-45
-5
MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
-0.1
-0.2
-0.1
μA
μA
μA
Collector cut-off current
ICEO
Emitter cut-off current
DC current gain
IEBO
807-16
807-25
807-40
100
160
250
250
400
600
hFE(1)
VCE= -1V, IC= -100mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
BE(sat)
IC=-500mA, IB= -50mA
IC= -500mA, IB= -50mA
-0.7
-1.2
V
V
V
V
CE= -5V, IC= -10mA
Transition frequency
100
MHz
fT
f=100MHz
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
BC807W
Typical Characteristics
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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