B0540W [HTSEMI]
SCHOTTKY BARRIER DIODE; 肖特基二极管
| 型号： | B0540W |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | SCHOTTKY BARRIER DIODE |
| 文件： | 总2页 (文件大小：718K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B0520LW/B0530W/B0540W
SOD-123
SCHOTTKY BARRIER DIODE
+
FEATURES
z
z
z
z
Low Forward Voltage Drop
Guard Ring Construction for Transient Protection
High Conductance
-
Also Available in Lead Free Version
MARKING: B0520LW:SD
B0530W: SE
B0540W: SF
Maximum Ratings @TA=25℃
Parameter
Symbol
VRRM
VRWM
VR
B0520LW
B0530W
B0540W
40
Unit
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
20
14
30
V
DC Blocking
Voltage
RMS Reverse Voltage Reverse voltage (DC)
Average rectified output Current
Forward current surge peak
Power dissipation
VR(RMS)
Io
21
0.5
28
V
A
IFSM
5.5
A
PD
500
mW
℃/W
℃
Thermal Resistance Junction to Ambient
Junction temperature
RθJA
Tj
250
150
Storage temperature
TSTG
dv/dt
-65~+150
1000
℃
V/μS
Voltage Rate of Change
Electrical Characteristics @TA=25℃
Parameter
Symbol
B0520LW
B0530W
B0540W
Unit
Conditions
IR=250μA
IR=200μA
IR=20μA
IF=0.1A
20
--
--
30
--
--
--
Minimum Reverse
V(BR)R
V
Breakdown Voltage
--
40
--
VF1
VF2
VF3
IR1
IR2
IR3
IR4
IR5
CT
0.320
0.385
--
0.375
0.430
--
Forward voltage
Reverse current
V
0.510
0.62
--
IF=0.5A
IF=1A
75
--
--
VR=10V
μA
20
--
--
VR=15V
250
--
10
--
VR=20V
Reverse current
μA
130
--
VR=30V
--
20
170
VR=40V
Capacitance between terminals
--
--
pF
VR=0,f=1MHz
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
B0520LW/B0530W/B0540W
Typical Characteristics
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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