A733 [HTSEMI]
TRANSISTOR (PNP); 晶体管（ PNP ）
| 型号： | A733 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR (PNP) |
| 文件： | 总2页 (文件大小：396K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A733
TRANSISTOR (PNP)
SOT-23
FEATURE
1. BASE
2. EMITTER
3. COLLECTOR
z
z
Collector-Base Voltage
Complement to C945
MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-60
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
-50
V
-5
V
Emitter-Base Voltage
Collector Current -Continuous
-150
200
mA
mW
PC
Collector Power Dissipation
Junction Temperature
Storage Temperature
Tj
150
℃
℃
Tstg
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
-60
-50
-5
TYP
MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
IC= -5uA,IE=0
V
V
V
IC= -1mA , IB=0
IE= -50uA, IC=0
VCB= -60 V , IE=0
-0.1
-0.1
475
uA
uA
IEBO
VEB= -5 V ,
IC=0
DC current gain
hFE
VCE= -6 V, IC= -1mA
IC= -100mA, IB=- 10mA
VCE=-6V,IC=-1.0mA
VCE=-6V,IC=-10mA
120
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE(on)
fT
-0.18
-0.62
-0.3
-0.68
V
V
-0.58
50
Transition frequency
MHz
pF
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHZ
4.5
6
7
VCE=-6V,IC=-0.3mA,
Rg=10kΩ,f=100HZ
Noise figure
NF
20
dB
CLASSIFICATION OF hFE
Rank
L
H
Range
120-220
220-475
MARKING
CS
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
A733
Typical Characteristics
2
JinYu
semiconductor
www.htsemi.com
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