2SD1766 [HTSEMI]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | 2SD1766 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总2页 (文件大小：725K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1766
TRANSISTOR (NPN)
FEATURES
SOT-89
1. BASE
z
Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A)
Complements to 2SB1188
z
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
2. COLLECTOR
3. EMITTER
1
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector dissipation
Value
Units
2
40
V
3
32
V
5
V
2
A
PC
500
150
-55-150
mW
TJ
Junction Temperature
Storage Temperature
℃
Tstg
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
40
32
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO IC=50μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=50μA, IC=0
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
ICBO
IEBO
VCB=20V, IE=0
VEB=4V, IC=0
1
1
μA
μA
DC current gain
hFE(1)
VCE(sat)
fT
VCE=3V, IC=500mA
82
390
0.8
Collector-emitter saturation voltage
Transition frequency
IC=2A, IB=0.2A
V
VCE=5V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
100
30
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
Rank
P
Q
R
82-180
120-270
DBQ
180-390
Range
Marking
DBP
DBR
1
JinYu
semiconductor
www.htsemi.com
2SD1766
2
JinYu
semiconductor
www.htsemi.com
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