2SC2712 [HTSEMI]
TRANSISTOR(NPN); 晶体管（ NPN ）
| 型号： | 2SC2712 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR(NPN) |
| 文件： | 总3页 (文件大小：712K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2712
SOT-23
TRANSISTOR (NPN)
1. BASE
FEATURE
· Low Noise: NF=1 dB (Typ),10dB(MAX)
· Complementary to 2SA1162
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
60
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
150
150
150
-55-150
mA
mW
℃
PC
TJ
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
60
50
5
TYP
MAX
UNIT
IC= 100μA, IE=0
IC=1mA , IB=0
V
V
IE= 100μA, IC=0
VCB= 60 V, IE=0
V
0.1
0.1
μA
μA
IEBO
VEB=5V, IC=0
DC current gain
hFE
VCE=6V, IC=2mA
IC= 100mA, IB=10mA
VCE=10V, IC= 1mA
VCB=10V, IE=0,f=1 MHz
70
80
700
0.25
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
0.1
V
MHz
pF
Output capacitance
Cob
2.0
1.0
3.5
10
VCE=6V,IC=0.1mA,f=1kHz,
Noise Figure
NF
dB
Rg=10kΩ
CLASSIFICATION OF hFE
Rank
O
70-140
LO
Y
120-240
LY
GR
BL
Range
Marking
200-400
LG
350-700
LL
1
JinYu
semiconductor
www.htsemi.com
2SC2712
2
JinYu
semiconductor
www.htsemi.com
2SC2712
3
JinYu
semiconductor
www.htsemi.com
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