2SC2411 [HTSEMI]
TRANSISOR(NPN); TRANSISOR （ NPN ）
| 型号： | 2SC2411 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISOR(NPN) |
| 文件： | 总2页 (文件大小：618K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2411
SOT-23
TRANSISOR(NPN)
1. BASE
2. EMITTER
3. COLLECTOR
FEATURES
z
z
z
High ICMax.ICMax. = 0.5mA
Low VCE(sat).Optimal for low voltage operation.
Complements the 2SA1036
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
40
V
32
V
5
500
200
150
-55-150
mA
mW
℃
Collector Power Dissipation
Junction Temperature
Storage Temperature
PC
TJ
Tstg
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
MIN
40
32
5
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IC=100μA,IE=0
IC=1mA,IB=0
V
IE=100μA,IC=0
μA
μA
VCB=20V,IE=0
1
1
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
hFE
VCE=3V,IC=100mA
IC=500mA,IB=50mA
VCE=5V,IC=20mA,f=100MHz
VCB=10V,IE=0,f=1MHz
82
390
0.4
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
V
MHz
pF
fT
250
6.0
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
P
Q
R
82-180
CP
120-270
CQ
180-390
CR
Range
Marking
1
JinYu
semiconductor
www.htsemi.com
2SC2411
2
JinYu
semiconductor
www.htsemi.com
相关型号：
2SC2411-P-TP
Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
MCC
2SC2411-Q-TP
Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
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