2SB1386 [HTSEMI]
TRANSISTOR(PNP); 晶体管（ PNP ）
| 型号： | 2SB1386 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR(PNP) |
| 文件： | 总3页 (文件大小：396K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SB1386
TRANSISTOR(PNP)
FEATURES
z
Low collector saturation voltage,
z
Execllent current-to-gain characteristics
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
Units
-30
V
Collector-Base Voltage
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
-20
-6
V
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-5
A
PC
0.5
W
℃
℃
TJ
150
-55-150
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
-30
-20
-6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-50μA,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-50μA,IC=0
V
V
μA
ICBO
IEBO
hFE
VCB=-20V,IE=0
-0.5
-0.5
390
-1
μA
Emitter cut-off current
VEB=-5V,IC=0
DC current gain
VCE=-2V,IC=-500mA
IC=-4A,IB=-100mA
VCE=-6V,IC=-50mA,f=30MHz
VCB=-20V,IE=0,f=1MHz
82
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
V
120
60
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE
P
Q
R
Rank
82-180
BHP
120-270
BHQ
180-390
BHR
Range
Marking
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
2SB1386
Typical Characteristics
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
2SB1386
3
JinYu
semiconductor
www.htsemi.com
Date:2011/05
相关型号：
2SB1386-P-TP
Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3
MCC
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