H9926S [HSMC]
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A); 双N沟道增强型MOSFET （ 20V ， 6A ）
| 型号： | H9926S |
| 厂家： | 
HI-SINCERITY MOCROELECTRONICS |
| 描述： | Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) |
| 文件： | 总4页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : MOS200508
Issued Date : 2005.08.01
Revised Date : 2005.10.06
Page No. : 1/4
HI-SINCERITY
MICROELECTRONICS CORP.
8
7
H9926S / H9926CS
6
•
5
8-Lead Plastic SO-8
Package Code: S
1
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
2
3
4
H9926S Symbol & Pin Assignment
Description
Pin 1: Source 2
Pin 2: Gate 2
Pin 3: Source 1
Pin 4: Gate 1
Pin 5 / 6: Drain 1
Pin 7 / 8: Drain 2
5
6
7
8
4
3
2
1
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
trench process. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
Q1
Q2
H9926CS Symbol & Pin Assignment
Pin 1: Source 2
Features
5
6
7
8
4
3
2
1
Pin 2: Gate 2
• RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
Q1
Pin 3: Source 1
Pin 4: Gate 1
Pin 5 / 6 / 7 / 8: Drain
Q2
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications
Applications
• Battery Protection
• Load Switch
• Power Management
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
VDS
Parameter
Ratings
20
Units
V
Drain-Source Voltage
Gate-Source Voltage
VGS
ID
V
±12
6
Drain Current (Continuous)
Drain Current (Pulsed) *1
A
IDM
30
A
Total Power Dissipation @TA=25oC
2
W
PD
Total Power Dissipation @TA=75oC
1.3
W
Tj, Tstg
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient*2
-55 to +150
62.5
°C
°C/W
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
H9926S, H9926CS
HSMC Product Specification
Spec. No. : MOS200508
Issued Date : 2005.08.01
Revised Date : 2005.10.06
Page No. : 2/4
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
• Static
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
VGS=0V, ID=250uA
20
-
34
25
-
-
40
30
1.5
1
V
VGS=2.5V, ID=5.2A
VGS=4.5V, ID=6A
VDS=VGS, ID=250uA
VDS=20V, VGS=0V
-
-
RDS(on)
mΩ
VGS(th)
IDSS
Gate Threshold Voltage
0.6
-
V
uA
nA
S
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward Transconductance
-
IGSS
-
-
VGS=±12V, VDS=0V
±100
-
gFS
VDS=10V, ID=6A
7
13
• Dynamic
Qg
Total Gate Charge
-
-
-
-
-
-
-
-
-
-
4.86
0.92
1.4
-
-
-
-
-
-
-
-
-
-
Qgs
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
VDS=10V, ID=6A, VGS=4.5V
VDS=8V, VGS=0V, f=1MHz
VDD=10V, ID=1A, VGS=4.5V
nC
pF
Qgd
Ciss
562
106
75
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
td(on)
tr
td(off)
tf
8.1
9.95
21.85
5.35
ns
RGEN=6Ω
• Drain-Source Diode Characteristics
IS
Maximum Diode Forward Current
Drain-Source Diode Forward Voltage
-
-
-
-
1.7
1.2
A
V
VSD
VGS=0V, IS=1.7A
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Switching
Switching
ton
toff
Test Circuit
VDD
Waveforms
td(on)
tr
90%
td(off)
tf
90%
RD
VIN
D
S
VOUT
10%
10%
Output, VOUT
Inverted
VGEN
90%
RG
50%
50%
G
Pulse Width
10%
Input, VIN
H9926S, H9926CS
HSMC Product Specification
Spec. No. : MOS200508
Issued Date : 2005.08.01
Revised Date : 2005.10.06
Page No. : 3/4
HI-SINCERITY
MICROELECTRONICS CORP.
SO-8 Dimension
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Min.
4.85
3.85
5.80
1.22
0.37
3.74
1.45
4.80
0.05
0.30
0.19
0.37
0.23
0.08
0.00
Max.
5.10
3.95
6.20
1.32
0.47
3.88
1.65
5.10
0.20
0.70
0.25
0.52
0.28
0.13
0.15
H9926S Marking:
A
G
Pb Free Mark
(Note)
Pb-Free: " . "
H
S
Normal: None
9 9 2 6
I
Pin 1 Index
Date Code
8
7
6
5
4
Control Code
C
H
B
Pin1 Index
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2
2
3
H9926CS Marking:
Pb Free Mark
(Note)
J
Pb-Free: "
.
"
H
S
Normal: None
D
9 9 2 6 C
E
K
Pin 1 Index
Date Code
Part A
Control Code
L
Part A
N
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6 & 7 & 8.D
Note: Green label is used for pb-free packing
M
*: Typical, Unit: mm
O
F
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
8-Lead SO-8 Plastic
Surface Mounted Package
HSMC Package Code: S
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H9926S, H9926CS
HSMC Product Specification
Spec. No. : MOS200508
Issued Date : 2005.08.01
Revised Date : 2005.10.06
Page No. : 4/4
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
Critical Zone
to T
TP
T
L
P
Ramp-up
TL
t
L
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
Sn-Pb Eutectic Assembly
<3oC/sec
Pb-Free Assembly
<3oC/sec
- Temperature Min (Tsmin
)
100oC
150oC
150oC
200oC
- Temperature Max (Tsmax
- Time (min to max) (ts)
Tsmax to TL
)
60~120 sec
60~180 sec
- Ramp-up Rate
<3oC/sec
<3oC/sec
Time maintained above:
- Temperature (TL)
- Time (tL)
183oC
217oC
60~150 sec
240oC +0/-5oC
60~150 sec
260oC +0/-5oC
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
10~30 sec
20~40 sec
Ramp-down Rate
<6oC/sec
<6oC/sec
Time 25oC to Peak Temperature
<6 minutes
<8 minutes
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Peak temperature
245oC ±5oC
Dipping time
5sec ±1sec
5sec ±1sec
Pb-Free devices.
260oC +0/-5oC
H9926S, H9926CS
HSMC Product Specification
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