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FF2-11-AC-03 [HONEYWELL]

Snap Acting/Limit Switch, DPST, Momentary, Wire Terminal, Panel Mount-threaded;

FF2-11-AC-03


元器件型号：	FF2-11-AC-03
生产厂家：	HONEYWELL SOLID STATE ELECTRONICS CENTER
描述和应用：	Snap Acting/Limit Switch, DPST, Momentary, Wire Terminal, Panel Mount-threaded 开关
PDF文件：	总4页 (文件大小：691K)
下载文档：	下载PDF数据表文档文件
型号参数：FF2-11-AC-03参数

FF2-11-DC

Snap Acting/Limit Switch, SPDT, Momentary, 1A, 30VDC, Wire Terminal, Non-contact Barrel Actuator, Panel Mount

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0 HONEYWELL

FF2-11-DC-03

Snap Acting/Limit Switch, DPST, Momentary, 1A, 30VDC, Wire Terminal, Panel Mount-threaded

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0 HONEYWELL

FF2221E

Power Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, PLASTIC, DIP-14

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0 DIODES

FF2221E

Power Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, PLASTIC, DIP-14

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0 ZETEX

FF2221E

Power Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, PLASTIC, DIP-14

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0 DIODES

FF2221J

Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14

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0 DIODES

FF2221J

Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14

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0 ZETEX

FF2221J

Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14

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0 DIODES

FF2222J

Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14

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0 ZETEX

FF224B

40 MHz - 550 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

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0 MOTOROLA

FF225R12ME3

EconoDUAL module with trench/fieldstop IGBT3 and EmCon High Efficiency diode

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49 INFINEON

FF225R12ME4

EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled HE diode and NTC

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118 INFINEON

FF225R12ME4_B11

EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTC

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25 INFINEON

FF225R12ME4B11BPSA1

Insulated Gate Bipolar Transistor, 320A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

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0 INFINEON

FF225R12ME4BOSA1

Insulated Gate Bipolar Transistor, 320A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

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0 INFINEON

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