HMS29N65 [HMSEMI]
N-Channel Super Junction Power MOSFET â ¢;
| 型号： | HMS29N65 |
| 厂家： | 
H&M Semiconductor |
| 描述： | N-Channel Super Junction Power MOSFET â ¢ |
| 文件： | 总9页 (文件大小：1010K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMS29N65/HMS29N65D/HMS29N65F
N-Channel Super Junction Power MOSFET Ⅲ
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
VDS
650
96
V
mΩ
A
RDS(ON)TYP
ID
29
Features
●Optimized body diode reverse recovery performance
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
Schematic diagram
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
● LLC Half-bridge
Intrinsic fast-recovery body diode
Package Marking And Ordering Information
Device
Device Package
TO-263
Marking
HMS29N65D
HMS29N65
HMS29N65F
HMS29N65D
HMS29N65
HMS29N65F
TO-220
TO-220F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
HMS29N65D
Parameter
Symbol
HMS29N65F
Unit
HMS29N65
650
V
V
Drain-Source Voltage (VGS=0V）
VDS
VGS
±30
Gate-Source Voltage (VDS=0V) AC (f>1 Hz)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
29
20
29*
20*
A
ID (DC)
ID (DC)
IDM (pluse)
PD
A
(Note 1)
87
87*
A
Pulsed drain current
Maximum Power Dissipation(Tc=25℃)
260
2.08
35
W
Derate above 25°C
0.28
W/°C
mJ
A
(Note 2)
676
5.2
EAS
IAR
Single pulse avalanche energy
(Note 1)
Avalanche current
Repetitive Avalanche energy ，tAR limited by Tjmax
(Note 1)
3.2
EAR
mJ
HMS29N65/HMS29N65D/HMS29N65F
HMS29N65D
Parameter
Symbol
HMS29N65F
Unit
HMS29N65
Drain Source voltage slope, VDS ≤480 V,
Reverse diode dv/dt，VDS ≤480 V,ISD<ID
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
50
50
dv/dt
dv/dt
V/ns
V/ns
°C
-55...+150
TJ,TSTG
Table 2. Thermal Characteristic
Parameter
HMS29N65D
Symbol
HMS29N65F
Unit
HMS29N65
Thermal Resistance，Junction-to-Case（Maximum）
Thermal Resistance，Junction-to-Ambient （Maximum）
RthJC
RthJA
0.48
62
3.57
80
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=650V,VGS=0V
VDS=650V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=14A
650
V
μA
μA
nA
V
3
IDSS
100
±100
4.0
IGSS
Gate Threshold Voltage
VGS(th)
RDS(ON)
2.0
Drain-Source On-State Resistance
Dynamic Characteristics
96
110
mΩ
Input Capacitance
Clss
Coss
Co(er)
2070
120
60
pF
pF
pF
VDS=50V,VGS=0V,
F=1.0MHz
Output Capacitance
Effective output capacitance, energy related
VGS=0 V,VDS=0...480 V
ID=constant, VGS=0 V
Effective output capacitance, time related
Co(tr)
311
pF
VDS=0...480V
Total Gate Charge
Qg
Qgs
Qgd
37.5
13
nC
nC
nC
VDS=480V,ID=29A,
Gate-Source Charge
VGS=10V
Gate-Drain Charge
11.5
Switching times
Turn-on Delay Time
td(on)
tr
td(off)
tf
14
12
65
11
nS
nS
nS
nS
Turn-on Rise Time
VDD=380V,ID=14A,
RG=2.3Ω,VGS=10V
Turn-Off Delay Time
Turn-Off Fall Time
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward On Voltage
ISD
ISDM
VSD
trr
29
87
A
A
TC=25°C
Tj=25°C,ISD=29A,VGS=0V
0.9
190
2
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
nS
uC
A
Qrr
Tj=25°C,IF=14A,di/dt=100A/μs
Irrm
21
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
HMS29N65/HMS29N65D/HMS29N65F
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Safe operating area for TO-220F
Figure3. Source-Drain Diode Forward Voltage
Figure4. Output characteristics
Figure5. Transfer characteristics
Figure6. Static drain-source on resistance
HMS29N65/HMS29N65D/HMS29N65F
Figure7. RDS(ON) vs Junction Temperature
Figure8. BVDSS vs Junction Temperature
Figure9. Maximum ID vs Junction Temperature
Figure10. Gate charge waveforms
Figure11. Capacitance
Figure12. Transient Thermal Impedance
HMS29N65/HMS29N65D/HMS29N65F
Figure13. Transient Thermal Impedance for TO-220F
HMS29N65/HMS29N65D/HMS29N65F
Test circuit
1）Gate charge test circuit & Waveform
2）Switch Time Test Circuit：
3）Unclamped Inductive Switching Test Circuit & Waveforms
HMS29N65/HMS29N65D/HMS29N65F
TO-263-3L Package Information
Dimensions In Millimeters
Min.
Dimensions In Inches
Min.
Symbol
Max.
4.57
0.25
0.94
1.40
0.61
1.40
9.40
8.23
10.28
8.08
Max.
0.180
0.010
0.037
0.055
0.024
0.055
0.370
0.324
0.405
0.318
A
A1
b
4.32
-
0.170
0.71
1.15
0.46
1.22
8.89
8.01
10.04
7.88
0.028
0.045
0.018
0.048
0.350
0.315
0.395
0.310
b2
c
c2
D
D1
E
E1
e
2.54 BSC
0.100 BSC
L
14.73
2.29
1.15
1.27
15.75
2.79
1.39
1.77
0.580
0.090
0.045
0.050
0.620
0.110
0.055
0.070
L1
L2
L3
HMS29N65/HMS29N65D/HMS29N65F
TO-220-3L-C Package Information
Dimensions In Millimeters
Min.
Dimensions In Inches
Min.
Symbol
Max.
4.600
2.550
0.910
1.370
0.650
1.400
10.250
9.750
12.950
Max.
0.181
0.100
0.036
0.054
0.026
0.055
0.404
0.384
0.510
A
A1
b
4.400
2.250
0.710
1.170
0.330
1.200
9.910
8.9500
12.650
0.173
0.089
0.028
0.046
0.013
0.047
0.390
0.352
0.498
b1
c
c1
D
E
E1
e
2.540 TYP.
0.100 TYP.
e1
F
4.980
2.650
7.900
0.000
12.900
2.850
5.180
2.950
8.100
0.300
13.400
3.250
0.196
0.104
0.311
0.000
0.508
0.112
0.204
0.116
0.319
0.012
0.528
0.128
H
h
L
L1
V
7.500 REF.
0.295 REF.
Φ
3.400
3.800
0.134
0.150
HMS29N65/HMS29N65D/HMS29N65F
TO-220F Package Information
Symbol
Dimensions In Millimeters
Min.
Dimensions In Inches
Min.
Max.
4.900
2.740
2.960
0.900
1.580
0.600
10.360
15.970
6.900
16.100
Max.
0.193
0.108
0.117
0.035
0.062
0.024
0.408
0.629
0.272
0.634
A
A1
A2
b1
b2
c
4.500
2.340
2.560
0.700
1.180
0.400
9.960
15.670
6.500
15.500
0.177
0.092
0.101
0.028
0.046
0.016
0.392
0.617
0.256
0.610
D
E
E1
E2
e
2.540 TYP
0.100 TYP
Φ
3.080
12.640
3.030
3.280
13.240
3.430
0.121
0.498
0.119
0.129
0.521
0.135
L
L1
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