HMS10N60I [HMSEMI]
600V N-Channel MOSFET;
| 型号： | HMS10N60I |
| 厂家： | 
H&M Semiconductor |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：985K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMS10N60K/HMS10N60I
HMS10N60K/HMS10N60I
600V N-Channel MOSFET
General Description
Features
This Power MOSFET is produced using H&M Semi’s
Advanced Super-Junction technology.
This advanced technology has been especially tailored
to minimize conduction loss, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode.
- 10A, 600V, RDS(on) typ. = 0.42Ω@VGS = 10 V
- Low gate charge ( typical 35nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
These devices are well suited for AC/DC power conversion
in switching mode operation for higher efficiency.
D
D
I-PAK
G
D-PAK
G
S
G D S
S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
HMS10N60K/HMS10N60I
Units
Drain-Source Voltage
600
V
VDSS
Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
- Pulsed
10
A
A
ID
8
IDM
(Note 1)
Drain Current
40
A
VGSS
Gate-Source Voltage
±30
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
120
mJ
A
2
60
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25℃)
mJ
V/ns
W
dv/dt
4.5
30
PD
- Derate above 25℃
0.24
W/℃
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
℃
Maximum lead temperature for soldering purposes,
TL
300
℃
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
HMS10N60K/HMS10N60I
Units
Thermal Resistance, Junction-to-Case
4.2
℃/W
RθJC
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
--
℃/W
℃/W
RθJS
62
RθJA
HMS10N60K/HMS10N60I
Electrical Characteristics
TC = 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
VGS = 0 V, ID = 250 uA, TJ=25℃
VGS = 0 V, ID = 250 uA, TJ=150℃
600
--
--
--
--
V
V
BVDSS
Drain-Source Breakdown Voltage
650
△BVDSS
/ △TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 uA, Referenced to 25℃
--
0.6
--
V/
℃
V
DS = 600 V, VGS = 0 V
--
--
--
--
--
--
--
--
1
uA
IDSS
Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125℃
10
uA
nA
nA
IGSSF
IGSSR
V
GS = 30 V, VDS = 0 V
GS = -30 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
V
On Characteristics
VGS(th)
V
DS = VGS, ID = 250 uA
Gate Threshold Voltage
2.5
--
--
4.5
V
Static Drain-Source
On-Resistance
RDS(on)
VGS = 10 V, ID = 5 A
VDS = 40 V, ID = 5 A
0.42
0.46
Ω
(Note 4)
gFS
Rg
Forward Transconductance
Gate resistance
--
--
16
--
--
S
f=1 MHz, Open drain
4.5
Ω
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
600
120
55
--
--
--
pF
pF
pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
--
--
--
--
--
--
--
25
55
70
40
35
3.8
4
ꢀ
--
--
--
--
--
--
--
ns
ns
VDD = 400 V, ID = 5 A,
tr
td(off)
tf
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
RG = 20 Ω
ns
(Note 4, 5)
(Note 4, 5)
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = 480 V, ID = 10 A,
VGS = 10 V
Drain-Source Diode Characteristics and Maximum Ratings
IS
ISM
VSD
trr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
10
38
1.5
--
A
A
V
GS = 0 V, IS = 10 A
GS = 0 V, IS = 10 A,
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
V
240
3.1
ns
uC
(Note 4)
Qrr
dIF / dt = 100 A/us
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=60mH, IAS=2A, VDD=150V, Starting TJ=25 ℃
3. ISD≤10A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25 ℃
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
HMS10N60K/HMS10N60I
Typical Characteristics (Continued)
VDS (V)
VDS (V)
Figure 1: On-Region Characteristics@25°C
Figure 2: On-Region Characteristics@125°C
V
GS(V)
ID (A)
Figure 4: On-Resistance vs. Drain Current
and Gate Voltage
Figure 3: Transfer Characteristics
Temperature (°C)
Figure 5: On-Resistance vs. Junction
Temperature
TJ (°C)
Figure 6: Break Down vs. Junction
Temperature
HMS10N60K/HMS10N60I
Typical Characteristics (Continued)
VSD (V)
Qg (nC)
Figure 7: Body-Diode Characteristics
Figure 8: Gate-Charge Characteristics
V
DS (V)
VDS (V)
Figure 9: Capacitance Characteristics
Figure 10: Coss stored Energy
VDS (V)
Pulse Width (s)
Figure 12: Single Pulse Power Rating
Junction-to-Case
Figure 11: Maximum Forward Biased
Safe Operating Area
HMS10N60K/HMS10N60I
Typical Characteristics (Continued)
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance
TCASE (°C)
TCASE (°C)
Figure 14: Avalanche energy
Figure 15: Current De-rating
Pulse Width (s)
Figure 16: Single Pulse Power Rating Junction-to-Ambient
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance
HMS10N60K/HMS10N60I
Gate Charge Test Circuit & Waveform
Current Regulator
VGS
Same Type
as DUT
50KΩ
200nF
Qg
12V
10V
300nF
VDS
Qgs
Qgd
VGS
DUT
3mA
R1
R2
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor
Resistive Switching Test Circuit & Waveforms
RL
Vout
Vout
90%
VDD
( 0.5 rated VDS
Vin
)
RG
DUT
10%
Vin
10V
td(on)
tr
t on
td(off)
t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS -- VDD
1
LL
2
----
2
EAS
=
LL IAS
VDS
BVDSS
IAS
Vary tp to obtain
required peak ID
ID
RG
I
D (t)
C
VDD
DUT
VDD
VDS (t)
10V
Time
t p
t p
HMS10N60K/HMS10N60I
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
--
I S
L
Driver
VGS
Same Type
as DUT
RG
VDD
• dv/dt controlled by RG
VGS
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
Gate Pulse Period
VGS
D =
10V
( Driver )
IFM , Body Diode Forward Current
I S
( DUT )
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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