HMC473MS8TR [HITTITE]
Variable Attenuator;
| 型号： | HMC473MS8TR |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | Variable Attenuator 衰减器 射频 微波 |
| 文件： | 总8页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC473MS8 / 473MS8E
v01.1105
GaAs MMIC VOLTAGE VARIABLE
ATTENUATOR, 0.45 - 2.2 GHz
5
Typical Applications
Features
The HMC473MS8 / HMC473MS8E is ideal for:
• Cellular, UMTS/3G Infrastructure
• Portable Wireless
RoHS Compliant Product
Single Positive Voltage Control: 0 to +3V
High Attenuation Range: 48 dB @ 0.9 GHz
High P1dB Compression Point: +15 dBm
Ultra Small Package: MSOP8
• GPS
Replaces HMC173MS8
Functional Diagram
General Description
The HMC473MS8 & HMC473MS8E are general
purpose absorptive voltage variable attenuators
in 8-lead MSOP packages. The devices operate
with a +3.3V supply voltage and a 0 to +3V control
voltage. Unique features include a high dynamic
attenuation range of up to 48 dB and excellent
power handling performance through all attenuation
states. The HMC473MS8 & HMC473MS8E are ideal
for operation in wireless applications from 0.45 to
1.6 GHz. Operation from 1.7 to 2.2 GHz is possible
with a reduced maximum attenuation of 29 to 32 dB.
Improved control voltage linearity vs. attenuation can
be achieved with an external driver circuit.
Electrical Specifications, TA = +25° C, Vdd = +3.3 Vdc, 50 Ohm System
Parameter
Min.
Typ.
Max.
Units
Insertion Loss (Min. Atten.)
(Vctl = 0.0 Vdc)
0.45 - 0.8 GHz
0.8 - 1.0 GHz
1.0 - 1.6 GHz
1.6 - 2.0 GHz
2.0 - 2.2 GHz
1.8
1.9
2.4
2.8
3.0
2.2
2.3
2.9
3.3
3.5
dB
dB
dB
dB
dB
Attenuation Range
(Vctl = 0 to +3 V)
0.45 - 0.8 GHz
0.8 - 1.0 GHz
1.0 - 1.6 GHz
1.6 - 2.0 GHz
2.0 - 2.2 GHz
34
43
32
27
24
39
48
37
32
29
dB
dB
dB
dB
dB
Return Loss
(Vctl = 0 to +3 V)
0.45 - 0.8 GHz
0.8 - 1.0 GHz
1.0 - 1.6 GHz
1.6 - 2.0 GHz
2.0 - 2.2 GHz
15
14
11
10
9
dB
dB
dB
Input Power for 0.1 dB Compression
(0.9 GHz)
Min Atten.
Atten. >2.0
20
5.5
dBm
dBm
Input Power for 1.0 dB Compression
(0.9 GHz)
Min Atten.
Atten. >2.0
24
11
28
15
dBm
dBm
Input Third Order Intercept
(0.9 GHz, Two-tone Input Power = +5.0 dBm Each Tone)
Min Atten.
Atten. >2.0
47
20
dBm
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
0.45 - 2.2 GHz
1.3
1.5
µS
µS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 156
HMC473MS8 / 473MS8E
v01.1105
GaAs MMIC VOLTAGE VARIABLE
ATTENUATOR, 0.45 - 2.2 GHz
5
Insertion Loss vs. Temperature
Return Loss vs. Control Voltage
0
-1
-2
-3
-4
-5
0
0 V (WORSE CASE)
1.0 V
1.8 V
2.0 V
3.0 V
-5
-10
-15
-20
-25
+25 C
+85 C
-40 C
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
FREQUENCY (GHz)
FREQUENCY (GHz)
Input IP3 vs. Control Voltage @ 0.45 GHz
Input IP3 vs. Control Voltage @ 0.9 GHz
55
55
50
45
40
35
30
50
45
40
35
30
25
25
+25 C
+25 C
+85 C
+85 C
-40 C
-40 C
20
20
15
15
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
CONTROL VOLTAGE (V)
CONTROL VOLTAGE (V)
Input IP3 vs. Control Voltage @ 1.9 GHz
Input IP3 vs. Control Voltage @ 2.1 GHz
55
55
50
45
40
35
30
50
45
40
35
30
25
25
+25 C
+25 C
+85 C
+85 C
-40 C
20
-40 C
20
15
15
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
CONTROL VOLTAGE (V)
CONTROL VOLTAGE (V)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 157
HMC473MS8 / 473MS8E
v01.1105
GaAs MMIC VOLTAGE VARIABLE
ATTENUATOR, 0.45 - 2.2 GHz
Relative Attenuation vs.
Control Voltage @ 0.45 GHz
Return Loss vs.
Control Voltage @ 0.45 GHz
5
0
0
+25 C
+85 C
-40 C
-9
-5
-10
-15
-20
-25
-18
+25 C
+85 C
-40 C
-27
-36
-45
0
0.5
1
1.5
2
2.5
2.5
2.5
3
3
3
0
0.5
1
1.5
2
2.5
2.5
2.5
3
3
3
CONTROL VOLTAGE (V)
CONTROL VOLTAGE (V)
Relative Attenuation vs.
Control Voltage @ 0.9 GHz
Return Loss vs.
Control Voltage @ 0.9 GHz
0
0
-10
+25 C
+85C
-40 C
-5
-10
-15
-20
-25
-20
+25 C
+85 C
-40 C
-30
-40
-50
-60
0
0.5
1
1.5
2
0
0.5
1
1.5
2
CONTROL VOLTAGE (V)
CONTROL VOLTAGE (V)
Relative Attenuation vs.
Control Voltage @ 1.9 GHz
Return Loss vs.
Control Voltage @ 1.9 GHz
0
0
-5
+25 C
+85 C
-40 C
-5
-10
-15
-20
-25
-10
-15
+25 C
+85 C
- 40 C
-20
-25
-30
-35
0
0.5
1
1.5
2
0
0.5
1
1.5
2
CONTROL VOLTAGE (V)
CONTROL VOLTAGE (V)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 158
HMC473MS8 / 473MS8E
v01.1105
GaAs MMIC VOLTAGE VARIABLE
ATTENUATOR, 0.45 - 2.2 GHz
Relative Attenuation vs.
Control Voltage @ 2.1 GHz
Return Loss vs.
Control Voltage @ 2.1 GHz
5
0
0
-5
+25 C
+85 C
-40 C
-5
-10
-15
-20
-25
-10
-15
+25 C
+85 C
-40 C
-20
-25
-30
-35
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
CONTROL VOLTAGE (V)
CONTROL VOLTAGE (V)
Relative Attenuation vs. Control Voltage
Worse Case Input P1dB vs. Temperature
0
25
-10
-20
-30
-40
-50
20
15
10
1.0 V
1.5 V
1.6V
1.8 V
2.0 V
3.0 V
+25 C
+85 C
-40 C
-60
1.7 V
5
-70
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0.4
0.7
1
1.3
1.6
1.9
2.2
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 159
HMC473MS8 / 473MS8E
v01.1105
GaAs MMIC VOLTAGE VARIABLE
ATTENUATOR, 0.45 - 2.2 GHz
5
Absolute Maximum Ratings
Control and Bias Voltage
VCTL
-0.2 Vdc to Vdd
VCTL
0 to +3 Vdc @ 1 μA
Vdd
+8 Vdc
Vdd
+3.3 Vdc 0.1 Vdc @ 10 μA
Maximum Input Power
Vdd = +3.3 Vdc
+29 dBm
+21 dBm
Min. Atten.
Attenuation >2 dB
Channel Temperature (Tc)
150 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Thermal Resistance (RTH
(junction to lead)
)
92 °C/W
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-65 to +150 °C
-40 to +85 °C
Class 1A
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H473
XXXX
HMC473MS8
Low Stress Injection Molded Plastic
Sn/Pb Solder
H473
XXXX
MSL1 [2]
HMC473MS8E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 160
HMC473MS8 / 473MS8E
v01.1105
GaAs MMIC VOLTAGE VARIABLE
ATTENUATOR, 0.45 - 2.2 GHz
5
Pin Descriptions
Pin Number
Function
RF1, RF2
Description
These pins are DC coupled and matched to 50 Ohms.
DC blocking capacitors are required. 330pF capacitors are
supplied on evaluation board.
Interface Schematic
1, 8
2, 7
3
GND
Vctl
Pins must connect to RF ground.
Control voltage
No Connection. These pins may be connected to RF ground.
Performance will not be affected.
4, 5
6
N/C
Vdd
Supply Voltage.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 161
HMC473MS8 / 473MS8E
v01.1105
GaAs MMIC VOLTAGE VARIABLE
ATTENUATOR, 0.45 - 2.2 GHz
5
Attenuation Linearizing Control Circuit
For The HMC473MS8 / HMC473MS8E Voltage Variable Attenuator
A driver circuit to improve the attenuation linearity of the HMC473MS8 & HMC473MS8E can be implemented with a
simple op-amp configuration. A breakpoint linearization circuit will scale the voltage supplied to the control line of the
HMC473MS8 & HMC473MS8E, so that a more linear attenuation vs. control voltage slope can be achieved. A -3.3V
and +3.3V supply is required.
Diode and resistor values which define the op-amp gain, and breakpoint were selected to optimize a measured
production lot of attenuators at 0.9 GHz. R7 may be varied to optimize the performance of any given attenuator. If
the input voltage to the linearizing circuit will not drop below 1.0V, the R9 and D2 may be omitted, and this will greatly
reduce the overall power consumption of the driver circuit.
The linearizing circuit has been optimized for 0.9 GHz attenuation applications. A similar approach may be used at
other frequencies by adjusting R1 - R9 resistor values.
Application Circuit
Required Parts List
Part
AD822
R1
Description
Manufacturer
Analog Devices
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Digi-Key
Op-Amp
10K ohms
200K ohms
7.5K ohms
39K ohms
220K ohms
91K ohms
910 ohms
51 ohms
R2
R3
R4
R5
R6
R7
R8
R9
100 ohms
LL4148 D-35
D1, D2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 162
HMC473MS8 / 473MS8E
v01.1105
GaAs MMIC VOLTAGE VARIABLE
ATTENUATOR, 0.45 - 2.2 GHz
5
Evaluation PCB
List of Materials for Evaluation PCB 101827 [1]
The circuit board used in the final application
should be generated with proper RF circuit design
techniques. Signal lines at the RF ports should be
50 ohm impedance and the package ground leads
should be connected directly to the PCB RF ground
plane, similar to that shown above. The evaluation
circuit board shown above is available from Hittite
Microwave Corporation upon request.
Item
Description
J1 - J2
J3 - J5
C1, C2
C3, C4
U1
PCB Mount SMA RF Connector
DC PIN
330pF capacitor, 0402 Pkg.
10KpF capacitor, 0603 Pkg.
HMC473MS8 / HMC473MS8E
101825 Eval Board
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 163
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