HMC314 [HITTITE]
GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz; 砷化镓的InGaP HBT MMIC驱动放大器0.7 - 4.0 GHz的
| 型号： | HMC314 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz |
| 文件： | 总6页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC314
v02.0802
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 0.7 - 4.0 GHz
Typical Applications
Ideal Broadband Gain Stage for:
Features
8
P1dB Output Power: +18 dBm
Output IP3: +29 dBm
Gain: 12 dB
• 2.2 - 2.7 GHz MMDS
• 3.5 GHz Wireless Local Loop
• Low Profile Portable Wireless Devices
• WLAN Systems
Single Supply: 5V
Ultra Small Package: SOT26
Functional Diagram
General Description
The HMC314 is a GaAs InGaP Heterojunction Bipo-
lar Transistor (HBT) MMIC amplifier that operates
from a single positive supply. This amplifier also
incorporates a power down feature. When the “Vpd”
pin is held low, the amplifier will shut down. The
surface mount SOT26 amplifier can be used as a
broadband gain stage for wideband applications.
The amplifier provides 12 dB of gain and +22 dBm
of saturated power while operating from a single
positive +5v supply. The HMC314 is packaged in
an ultra small SOT26 package at a height of only
1.45mm.
Electrical Specifications,TA = +25° C
Vs = +5V, Rbias = 10 Ohm
Units
Parameter
Min.
7
Typ.
0.7 - 4.0
12
Max.
Frequency Range
GHz
dB
Gain
16
Gain Variation Over Temperature
Input Return Loss
0.015
12
0.025
dB/°C
dB
6
Output Return Loss
2
6
dB
Reverse Isolation
22
15
19
26
30
dB
Output Power for 1 dB Compression (P1dB) @ 1 GHz
Saturated Output Power (Psat) @ 1 GHz
Output Third Order Intercept (IP3) @ 1 GHz
18
dBm
dBm
dBm
ns
22
29
Switching Speed
On/Off
60
Supply Current (Icc)
Control Voltage (Vpd)
Control Current (Ipd)
150
0/5
mA
Volts
mA
.001/12
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 74
HMC314
v02.0802
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 0.7 - 4.0 GHz
Gain & Return Loss
Gain vs.Temperature
8
20
15
10
5
20
S11
S21
S22
+ 25 C
+ 65 C
- 40 C
15
0
10
5
-5
-10
-15
-20
-25
0
0
1
2
3
4
5
6
7
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs.Temperature
Output Return Loss vs.Temperature
0
0
+ 25 C
+ 65 C
- 40 C
-5
-10
-15
-20
-25
-4
-8
-12
+ 25 C
+ 65 C
- 40 C
-16
-20
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs.Temperature
0
+ 25 C
+ 65 C
- 40 C
-10
-20
-30
-40
-50
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 75
HMC314
v02.0802
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 0.7 - 4.0 GHz
P1dB vs.Temperature
Psat vs.Temperature
8
25
25
20
15
10
5
20
15
10
+ 25 C
+ 65 C
- 40 C
+ 25 C
+ 65 C
- 40 C
5
0
0
0.5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
1
1.5
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Power Compression @ 1 GHz
Power Compression @ 3 GHz
25
25
Pout (dBm)
20
15
10
5
Gain (dB)
PAE (%)
20
15
10
5
Pout (dBm)
Gain (dB)
PAE (%)
0
0
-5
-5
-8 -6 -4 -2
0
2
4
6
8
10 12 14 16
-8 -6 -4 -2
0
2
4
6
8
10 12 14 16
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs.Temperature
40
35
30
25
20
15
10
5
+ 25 C
+ 65 C
- 40 C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 76
HMC314
v02.0802
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 0.7 - 4.0 GHz
Absolute Maximum Ratings
Truth Table
8
Collector Bias Voltage (Vcc)
Control Voltage Range (Vpd)
+5.0 Vdc
Vs
5V
5V
Vctl
5V
Is
Ictl
State
On
-0.2 to 3.5 Vdc
150 mA
<1 µA
12 mA
<1 µA
RF Input Power (RFin)(Vs = +5.0 Vdc) +20 dBm
0V
Power Down
Junction Temperature
150 °C
Continuous Pdiss (T = 65 °C)
(derate 6.57 mW/°C above 65 °C)
0.558 W
Thermal Resistance
(junction to lead)
152 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +65 °C
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 77
HMC314
v02.0802
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 0.7 - 4.0 GHz
Application Circuit
8
Note:
1. Requires a 10 Ohm resistor (Rbias) in series with the Vcc line and a 160 Ohm resistor in series with the Vpd line.
2. Requires Blocking Capacitors on Pins 1 & 3.
3. Requires bypass capacitors on Vcc and Vpd line as shown.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 78
HMC314
v02.0802
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 0.7 - 4.0 GHz
Evaluation PCB
8
List of Material
The circuit board used in the final application should use RF
circuit design techniques. Signal lines should have 50 ohm
impedance while the package ground leads should be con-
nected directly to the ground plane similar to that shown. A
sufficient number of via holes should be used to connect
the top and bottom ground planes. The evaluation circuit
board shown is available from Hittite upon request.
Item
Description
J1, J2
J3, J4, J5
U1
PC Mount SMA Connector
DC Pins
HMC314
PCB*
104198 Evaluation PCB 1.5” x 1.5”
*Circuit Board Material: Roger 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 79
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