HMC174MS8_05 [HITTITE]
GaAs MMIC T/R SWITCH DC - 3 GHz; 砷化镓MMIC T / R开关DC - 3 GHz的
| 型号： | HMC174MS8_05 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs MMIC T/R SWITCH DC - 3 GHz |
| 文件： | 总6页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC174MS8 / 174MS8E
v02.0805
GaAs MMIC T/R SWITCH
DC - 3 GHz
Typical Applications
Features
The HMC174MS8 / HMC174MS8E is ideal for:
• ISM Applications
Ultra Small Package: MSOP8
High Third Order Intercept: +60 dBm
Single Positive Supply: +3 to +10V
High RF power Capabilty
• PCMCIA Wireless Cards
• Portable Wireless
General Description
Functional Diagram
The HMC174MS8 & HMC174MS8E are low-cost
SPDT switches in 8-lead MSOP packages for use in
transmit-receive applications which require very low
distortion at high signal power levels. The device can
control signals from DC to 3.0 GHz and is especially
suited for 900 MHz, 1.8 - 2.2 GHz, and 2.4 GHz ISM
applications with only 0.5 dB loss. The design pro-
vides exceptional intermodulation performance; pro-
viding a +60 dBm third order intercept at 8 Volt bias.
RF1 and RF2 are reflective shorts when “OFF”. On-
chip circuitry allows single positive supply operation
at very low DC current with control inputs compatible
with CMOS and most TTL logic families.
14
Electrical Specifications, TA = +25° C, Vdd = +5 Vdc, 50 Ohm System
Parameter
Frequency
Min.
Typ.
Max.
Units
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
0.5
0.5
0.7
1.4
0.7
0.8
1.0
1.8
dB
dB
dB
dB
Insertion Loss
Isolation
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
22
20
17
13
25
24
21
17
dB
dB
dB
dB
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
20
16
13
9
28
21
17
11
dB
dB
dB
dB
Return Loss
0.5 - 1.0 GHz
0.5 - 3.0 GHz
35
34
39
38
dBm
dBm
Input Power for 1dB Compression
0/8V Control
0/8V Control
0.5 - 1.0 GHz
0.5 - 3.0 GHz
55
55
60
60
dBm
dBm
Input Third Order Intercept
Switching Characteristics
DC - 3.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
10
24
ns
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
14 - 8
HMC174MS8 / 174MS8E
v02.0805
GaAs MMIC T/R SWITCH
DC - 3 GHz
Insertion Loss
Isolation
0
-0.5
-1
0
-10
-20
-30
-40
-1.5
-2
-2.5
-3
-3.5
-4
0
1
2
3
0
1
2
3
FREQUENCY (GHz)
FREQUENCY (GHz)
Return Loss
14
0
-10
-20
-30
-40
0
1
2
3
FREQUENCY (GHz)
Input 0.1 and 1.0 dB
Input Third Order
Compression vs. Bias Voltage
Intercept vs. Bias Voltage
45
65
1dB at 900MHz
1db at 1900MHz
60
900MHz
40
35
55
50
1900MHz
45
0.1dB at 900MHz
0.1dB at 1900MHz
30
25
40
35
2
4
6
8
10
12
2
4
6
8
10
12
BIAS (Volts)
BIAS (Volts)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
14 - 9
HMC174MS8 / 174MS8E
v02.0805
GaAs MMIC T/R SWITCH
DC - 3 GHz
Compression vs. Bias Voltages
Carrier at 900 MHz
Carrier at 1900 MHz
Input Power
Input Power
for 1.0 dB
Input Power
for 0.1 dB
Input Power
for 1.0 dB
Bias
Vdd
for 0.1 dB
Compression
Compression
Compression
Compression
(Volts)
(dBm)
27
(dBm)
31
(dBm)
26
(dBm)
30
3
4
30
34
29
33
5
32
36
31
35
8
36
39
35
38
10
37
40
36
39
Caution: Do not operate in 1dB compression at power
levels above +35dBm and do not ‘hot switch’ power
levels greater than +23dBm (Vdd = +5Vdc).
Distortion vs. Bias Voltage
14
1 Watt Carrier at 900 MHz
1 Watt Carrier at 1900 MHz
Third
Second
Order
Third
Second
Order
Bias
Vdd
Second
Second
Order
Order
Harmonic
Harmonic
Intercept
Intercept
Intercept
Intercept
(Volts)
(dBm)
43
(dBm)
71
(dBc)
45
(dBm)
42
(dBm)
78
(dBc)
55
3
4
48
85
55
46
88
65
5
53
90
56
51
87
58
8
60
90
58
60
90
59
10
60
90
59
60
90
60
Truth Table
*Control Input Voltage Tolerances are 0.2 Vdc
Bias
Current
Control
Current
Bias
Control Input*
Control Current
Signal Path State
Vdd
(Vdc)
A
(Vdc)
B
(Vdc)
Idd
(uA)
Ia
(uA)
Ib
(uA)
RF to RF1
RF to RF2
3
3
0
0
Vdd
0
30
25
-15
-25
-15
0
OFF
ON
OFF
OFF
ON
0
3
Vdd
0
25
0
-25
OFF
OFF
ON
5
0
110
115
115
380
495
495
600
600
-55
-55
OFF
OFF
ON
5
0
Vdd
0
-100
-15
-15
5
Vdd
0
-100
-190
-220
-275
225
-600
OFF
OFF
ON
10
10
10
5
0
-190
-275
-220
-600
225
OFF
OFF
ON
0
Vdd
0
Vdd
-Vdd
Vdd
OFF
ON
Vdd
-Vdd
OFF
ON
5
OFF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
14 - 10
HMC174MS8 / 174MS8E
v02.0805
GaAs MMIC T/R SWITCH
DC - 3 GHz
Absolute Maximum Ratings
Bias Voltage Range (Vdd)
Control Voltage Range (A & B)
Storage Temperature
-0.2 to +12 Vdc
-0.2 to +Vdd Vdc
-65 to +150 °C
-40 to +85 °C
Class 1A
Operating Temperature
ESD Sensitivity (HBM)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
14
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H174
XXXX
HMC174MS8
Low Stress Injection Molded Plastic
Sn/Pb Solder
H174
XXXX
MSL1 [2]
HMC174MS8E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
14 - 11
HMC174MS8 / 174MS8E
v02.0805
GaAs MMIC T/R SWITCH
DC - 3 GHz
Typical Application Circuit
14
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS
logic gates and to pin 4 of the RF switch.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency
of operation.
4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower
RF power capability) at bias voltages down to +3V.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
14 - 12
HMC174MS8 / 174MS8E
v02.0805
GaAs MMIC T/R SWITCH
DC - 3 GHz
Evaluation Circuit Board
14
List of Materials for Evaluation PCB 104124 [1]
The circuit board used in the final application should
be generated with proper RF circuit design tech-
niques. Signal lines at the RF port should have 50
ohm impedance and the package ground leads and
package bottom should be connected directly to the
ground plane similar to that shown above. The eval-
uation circuit board shown above is available from
Hittite Microwave Corporation upon request.
Item
Description
J1 - J3
J4 - J7
C1 - C3
C4
PCB Mount SMA RF Connector
DC Pin
100 pF capacitor, 0402 Pkg.
10,000 pF capacitor, 0603 Pkg.
HMC174MS8 / HMC174MS8E T/R Switch
104122 Evaluation PCB
U1
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
14 - 13
相关型号：
HMC175MS8E
Double Balanced Mixer, 1700MHz Min, 4500MHz Max, 11dB Conversion Loss-Max, ROHS COMPLIANT, PLASTIC, SMT, MSOP-8
HITTITE
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