HMC129_07 [HITTITE]

GaAs MMIC DOUBLE-BALANCED MIXER, 4 - 8 GHz; 砷化镓MMIC双平衡混频器, 4 - 8 GHz的
HMC129_07
型号: HMC129_07
厂家: HITTITE MICROWAVE CORPORATION    HITTITE MICROWAVE CORPORATION
描述:

GaAs MMIC DOUBLE-BALANCED MIXER, 4 - 8 GHz
砷化镓MMIC双平衡混频器, 4 - 8 GHz的

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HMC129  
v04.1007  
GaAs MMIC DOUBLE-BALANCED  
MIXER, 4 - 8 GHz  
Typical Applications  
Features  
Conversion Loss: 7 dB  
LO to RF and IF Isolation: 40 dB  
Input IP3: +17 dBm  
The HMC129 is ideal for:  
• Microwave & VSAT Radios  
• Test Equipment  
3
• Military EW, ECM, C3I  
• Space Telecom  
No DC Bias Required  
Die Size: 1.40 x 1.40 x 0.1 mm  
Functional Diagram  
General Description  
The HMC129 chip is a miniature double-balanced  
mixer which can be used as an upconverter or down-  
converter in the 4 to 8 GHz band. The chip can be  
integrated directly into hybrid MICs without DC bias  
or external baluns to provide an extremely compact  
mixer. It is ideally suited for applications where small  
size, no DC bias, and consistent IC performance are  
required. This mixer can operate over a wide LO drive  
input of +9 to +15 dBm. It performs equally well as a  
Bi-Phase modulator or demodulator. See the HMC136  
data sheet.  
Electrical Specifications, TA = +25° C, LO Drive = +15 dBm*  
Parameter  
Min.  
Typ.  
Max.  
Units  
GHz  
GHz  
dB  
Frequency Range, RF & LO  
Frequency Range, IF  
Conversion Loss  
4.0 - 8.0  
DC - 3.0  
7
9
9
Noise Figure (SSB)  
LO to RF Isolation  
LO to IF Isolation  
7
dB  
30  
35  
13  
40  
6
40  
42  
17  
55  
10  
dB  
dB  
IP3 (Input)  
dBm  
dBm  
dBm  
IP2 (Input)  
1 dB Gain Compression (Input)  
* Unless otherwise noted, all measurements performed as downconverter, IF = 100 MHz  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
3 - 8  
HMC129  
v04.1007  
GaAs MMIC DOUBLE-BALANCED  
MIXER, 4 - 8 GHz  
Conversion Gain vs. Temperature  
Isolation @ LO = +15 dBm  
LO = +15 dBm  
0
0
-10  
-5  
-10  
-15  
-20  
-20  
RF/IF  
LO/RF  
LO/IF  
3
-30  
-40  
-50  
-60  
+25 C  
+85 C  
-55 C  
2
3
4
5
6
7
8
9
10  
10  
4
2
3
4
5
6
7
8
9
10  
10  
10  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Conversion Gain vs. LO Drive  
Return Loss @ LO = +15 dBm  
0
0
LO RETURN LOSS  
RF RETURN LOSS  
-5  
-5  
-10  
-15  
-20  
-10  
+9 dBm  
+11 dBm  
-15  
+13 dBm  
+15 dBm  
-20  
2
3
4
5
6
7
8
9
2
3
4
5
6
7
8
9
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Unconverter Performance  
Conversion Gain vs. LO Drive  
IF Bandwidth @ LO = +15 dBm  
0
0
-5  
-5  
-10  
-10  
+9 dBm  
IF RETURN LOSS  
-15  
+11 dBm  
-15  
IF BANDWIDTH  
+13 dBm  
+15 dBm  
-20  
-20  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
2
3
4
5
6
7
8
9
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
3 - 9  
HMC129  
v04.1007  
GaAs MMIC DOUBLE-BALANCED  
MIXER, 4 - 8 GHz  
Input IP3 vs.  
Temperature @ LO = +15 dBm  
Input IP3 vs. LO Drive  
30  
30  
+11 dBm  
+13 dBm  
+15 dBm  
+25 C  
+85 C  
-55 C  
25  
20  
15  
10  
25  
20  
15  
10  
3
2
3
4
5
6
7
8
9
10  
2
3
4
5
6
7
8
9
10  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Input IP2 vs.  
Temperature @ LO = +15 dBm  
Input IP2 vs. LO Drive  
80  
80  
70  
60  
50  
40  
30  
20  
70  
60  
50  
40  
+25 C  
+85 C  
+11 dBm  
+13 dBm  
+15 dBm  
-55 C  
30  
20  
2
3
4
5
6
7
8
9
10  
2
3
4
5
6
7
8
9
10  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Input P1dB vs.  
Temperature @ LO = +15 dBm  
Harmonics of LO  
15  
nLO Spur @ RF Port  
LO Freq. (GHz)  
1
2
3
4
14  
4
-30.7  
-29.2  
-24.7  
-19.7  
-23.3  
-17.2  
-33.5  
-57.3  
-41.8  
-42.5  
-45.7  
-36.8  
-32.7  
-64.8  
-35.0  
-20.5  
-22.5  
-26.7  
-56.7  
-43.8  
-43.0  
-45.7  
-46.8  
-68.7  
13  
+25 C  
5
+85 C  
-55 C  
12  
6
11  
10  
9
7
8
9
LO = +13 dBm  
All values in dBc below input LO level measured at RF port  
8
2
3
4
5
6
7
8
9
10  
FREQUENCY (GHz)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
3 - 10  
HMC129  
v04.1007  
GaAs MMIC DOUBLE-BALANCED  
MIXER, 4 - 8 GHz  
MxN Spurious @ IF Port  
Absolute Maximum Ratings  
nLO  
LO Drive  
+27 dBm  
mRF  
0
1
2
3
4
Storage Temperature  
Operating Temperature  
-65 to +150 °C  
-55 to +85 °C  
0
1
2
3
4
xx  
13.66  
0
26.83  
31.33  
75.16  
81.16  
80.0  
9.16  
38.33  
43.5  
76.66  
78.66  
82.0  
8.16  
78.5  
76.0  
73.83  
49.33  
79.16  
64.5  
81.83  
3
80.16  
80.0  
77.83  
%,%#42/34!4)# 3%.3)4)6% $%6)#%  
/"3%26% (!.$,).' 02%#!54)/.3  
RF Freq. = 6.1 GHz @ -10 dBm  
LO Freq. = 6.0 GHz @ +13 dBm  
Measured as downconverter  
Outline Drawing  
Die Packaging Information [1]  
NOTES:  
1. ALL DIMENSIONS ARE IN INCHES [MM]  
2. BOND PADS ARE .004” SQUARE  
3. TYPICAL BOND PAD SPACING CENTER TO CENTER  
.1 IS .006” EXCEPT AS SHOWN  
Standard  
Alternate  
WP-3  
[2]  
4. DIE THICKNESS = .004” [.100 MM]  
5. BACKSIDE METALIZATION: GOLD  
6. BACKSIDE METAL IS GROUND  
[1] Refer to the “Packaging Information” section for die  
packaging dimensions.  
[2] For alternate packaging information contact Hittite  
Microwave Corporation.  
7. BOND PAD METALIZATION: GOLD  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
3 - 11  
HMC129  
v04.1007  
GaAs MMIC DOUBLE-BALANCED  
MIXER, 4 - 8 GHz  
Pad Descriptions  
Pad Number  
Function  
Description  
Interface Schematic  
1
RF  
LO  
This pin is DC coupled and matched to 50 Ohms.  
This pin is DC coupled and matched to 50 Ohms.  
3
2
3
This pin is DC coupled. For applications not requiring oper-  
ation to DC, this port should be DC blocked externally using  
a series capacitor whose value has been chosen to pass  
the necessary IF frequency range. For operation to DC this  
pin must not source or sink more than 2mA of current or die  
non-function and possible die failure will result.  
IF  
GND  
The backside of the die must connect to RF ground.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
3 - 12  
HMC129  
v04.1007  
GaAs MMIC DOUBLE-BALANCED  
MIXER, 4 - 8 GHz  
Assembly Diagram  
3
Handling Precautions  
Follow these precautions to avoid permanent damage.  
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag  
for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.  
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.  
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.  
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize  
inductive pick-up.  
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the  
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.  
Mounting  
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting  
surface should be clean and flat.  
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature  
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip  
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for  
attachment.  
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the  
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.  
Wire Bonding  
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of  
150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum  
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or  
substrate. All bonds should be as short as possible <0.31 mm (12 mils).  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
3 - 13  

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