574MS8E [HITTITE]

GaAs MMIC 5 WATT T/R SWITCH DC - 3 GHz; 砷化镓MMIC 5 WATT T / R开关DC - 3 GHz的
574MS8E
型号: 574MS8E
厂家: HITTITE MICROWAVE CORPORATION    HITTITE MICROWAVE CORPORATION
描述:

GaAs MMIC 5 WATT T/R SWITCH DC - 3 GHz
砷化镓MMIC 5 WATT T / R开关DC - 3 GHz的

开关
文件: 总8页 (文件大小:256K)
中文:  中文翻译
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HMC574MS8 / 574MS8E  
v02.0308  
GaAs MMIC 5 WATT T/R SWITCH  
DC - 3 GHz  
Typical Applications  
Features  
The HMC574MS8 / HMC574MS8E is ideal for:  
• Cellular/3G Infrastructure  
• Private Mobile Radio Handsets  
• WLAN, WiMAX & WiBro  
Low Insertion Loss: 0.3 dB  
High Third Order Intercept: +65 dBm  
Isolation: 30 dB  
Single Positive Supply: +3 to +8V  
SMT Package: MSOP8  
• Automotive Telematics  
• Test Equipment  
Included in the HMC-DK005 Designer’s Kit  
Functional Diagram  
General Description  
The HMC574MS8 & HMC574MS8E are low-cost  
SPDT switches in 8-lead MSOP packages for use  
in transmit/receive applications which require very  
low distortion at high incident power levels. The  
device can control signals from DC to 3 GHz and  
is especially suited for Cellular/3G infrastructure,  
WiMAX and WiBro applications with only 0.3 dB  
typical insertion loss. The design provides 5 watt  
power handling performance and +65 dBm third  
order intercept at +8 Volt bias. RF1 and RF2 are  
reflective shorts when “Off”.  
10  
Electrical Specifications,  
TA = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc (Unless Otherwise Stated), 50 Ohm System  
Parameter  
Frequency  
Min.  
Typ.  
Max.  
Units  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 2.5 GHz  
DC - 3.0 GHz  
0.25  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
dB  
dB  
dB  
dB  
Insertion Loss  
Isolation  
0.5  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 2.5 GHz  
DC - 3.0 GHz  
26  
24  
21  
16  
30  
28  
25  
20  
dB  
dB  
dB  
dB  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 2.5 GHz  
DC - 3.0 GHz  
35  
25  
18  
16  
dB  
dB  
dB  
dB  
Return Loss  
Vctl = 0/+3V  
Vctl = 0/+5V  
Vctl = 0/+8V  
33  
35  
37  
36  
38  
39  
dBm  
dBm  
dBm  
Input Power for 1dB Compression  
Input Third Order Intercept  
0.5 - 3.0 GHz  
Vctl = 0/+3V  
Vctl = 0/+5V  
Vctl = 0/+8V  
55  
63  
65  
dBm  
dBm  
dBm  
0.5 - 3.0 GHz  
DC - 3.0 GHz  
(Two-tone Input Power = +27 dBm Each Tone)  
Switching Characteristics  
tRISE, tFALL (10/90% RF)  
tON, tOFF (50% CTL to 10/90% RF)  
80  
120  
ns  
ns  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
10 - 350  
HMC574MS8 / 574MS8E  
v02.0308  
GaAs MMIC 5 WATT T/R SWITCH  
DC - 3 GHz  
Insertion Loss  
Isolation Between RFC & RF1/RF2  
0
0
+25C  
+85C  
-40C  
-0.5  
-1  
-10  
-20  
-30  
-40  
+25C  
+85C  
-40C  
-1.5  
-2  
0
1
2
3
3
3
4
4
4
0
1
2
3
3
3
4
4
4
FREQUENCY (GHz)  
FREQUENCY (GHz)  
10  
Return Loss  
RF1 to RF2 Isolation  
0
0
RF1 ON  
RF2 ON  
-10  
-20  
-30  
-40  
-50  
+25C  
+85C  
-40C  
-10  
-20  
-30  
-40  
0
0
1
2
1
2
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Input P0.1dB vs. Vdd  
Input P1dB vs. Vdd  
42  
40  
38  
36  
34  
32  
30  
28  
26  
42  
40  
38  
36  
34  
32  
30  
28  
26  
+8V  
+5V  
+3V  
+8V  
+5V  
+3V  
0
1
2
0
1
2
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
10 - 351  
HMC574MS8 / 574MS8E  
v02.0308  
GaAs MMIC 5 WATT T/R SWITCH  
DC - 3 GHz  
Input IP3 vs. Input Power @ 900 MHz  
Input IP3 vs. Input Power @ 1900 MHz  
70  
70  
65  
60  
65  
60  
+8V  
+5V  
+8V  
+5V  
55  
55  
50  
50  
45  
45  
27  
28  
29  
30  
31  
32  
33  
27  
28  
29  
30  
31  
32  
33  
TWO TONE INPUT POWER (dBm) (EACH TONE)  
TWO TONE INPUT POWER (dBm) (EACH TONE)  
10  
2nd & 3rd Harmonics @ 900 MHz  
Vdd = +3 Volts  
Input Third Order Intercept  
70  
0
0
65  
60  
55  
-20  
-40  
-60  
-80  
-100  
-0.2  
-0.4  
-0.6  
50  
+8V  
+5V  
-0.8  
+3V  
45  
F2  
F3  
40  
-1  
0
1
2
3
4
24  
26  
28  
30  
32  
34  
36  
FREQUENCY (GHz)  
INPUT POWER (dBm)  
2nd & 3rd Harmonics @ 900 MHz  
2nd & 3rd Harmonics @ 900 MHz  
Vdd = +5 Volts  
Vdd = +8 Volts  
0
0
0
0
-20  
-40  
-60  
-80  
-100  
-20  
-40  
-60  
-80  
-100  
-0.2  
-0.4  
-0.6  
-0.2  
-0.4  
-0.6  
-0.8  
-0.8  
F2  
F3  
F2  
F3  
-1  
-1  
26  
28  
30  
32  
34  
36  
38  
28  
30  
32  
34  
36  
38  
40  
INPUT POWER (dBm)  
INPUT POWER (dBm)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
10 - 352  
HMC574MS8 / 574MS8E  
v02.0308  
GaAs MMIC 5 WATT T/R SWITCH  
DC - 3 GHz  
Input P0.1dB vs. Vdd  
Input P1dB vs. Vdd  
40  
40  
35  
30  
25  
35  
+8V  
30  
+5V  
+3V  
+8V  
+5V  
+3V  
25  
20  
20  
0.01  
0.1  
1
0.01  
0.1  
1
FREQUENCY (GHz)  
FREQUENCY (GHz)  
10  
Absolute Maximum Ratings  
Bias Voltage & Current  
Max. Input Power  
Vdd (Vdc)  
Typical Idd (μA)  
0.5 - 2.5 GHz  
39 dBm  
Vdd = 0/+8V  
+3  
+5  
+8  
2
Bias Voltage Range (Vdd)  
Control Voltage Range (A & B)  
Hot Switching Power Level  
-0.2 to +10 Vdc  
10  
40  
-0.2 to +Vdd Vdc  
39 dBm  
150 °C  
0.65W  
Vdd = +8V  
Channel Temperature  
Control Voltages  
Continuous Pdiss ( T= + 85 °C)  
(derate 10 mW/°C above 85 °C)  
State  
Bias Condition  
Thermal Resistance  
Storage Temperature  
Operating Temperature  
ESD Sensitivity (HBM)  
100 °C/W  
Low  
0 to +0.2 Vdc @ 10 μA Typical  
Vdd 0.2 Vdc @ 10 μA Typical  
-65 to +150 °C  
-40 to +85 °C  
Class 1A  
High  
DC Blocks are required at ports RFC, RF1 and RF2  
Truth Table  
Control Input (Vctl)  
Signal Path State  
A
B
RFC to RF1  
RFC to RF2  
High  
Low  
Low  
High  
Off  
On  
On  
Off  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
10 - 353  
HMC574MS8 / 574MS8E  
v02.0308  
GaAs MMIC 5 WATT T/R SWITCH  
DC - 3 GHz  
Outline Drawing  
10  
NOTES:  
1. LEADFRAME MATERIAL: COPPER ALLOY  
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]  
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.  
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.  
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.  
Package Information  
Part Number  
Package Body Material  
Lead Finish  
MSL Rating  
MSL1 [1]  
Package Marking [3]  
H574  
XXXX  
HMC574MS8  
Low Stress Injection Molded Plastic  
Sn/Pb Solder  
H574  
XXXX  
MSL1 [2]  
HMC574MS8E  
RoHS-compliant Low Stress Injection Molded Plastic  
100% matte Sn  
[1] Max peak reflow temperature of 235 °C  
[2] Max peak reflow temperature of 260 °C  
[3] 4-Digit lot number XXXX  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
10 - 354  
HMC574MS8 / 574MS8E  
v02.0308  
GaAs MMIC 5 WATT T/R SWITCH  
DC - 3 GHz  
Pin Descriptions  
Pin Number  
Function  
A
Description  
Interface Schematic  
1
2
See truth table and control voltage table.  
See truth table and control voltage table.  
B
This pin is DC coupled and matched to 50 Ohm.  
Blocking capacitors are required.  
3, 5, 8  
4
RFC, RF1, RF2  
Vdd  
Supply Voltage.  
6, 7  
GND  
This pin must be connected to RF/DC ground.  
10  
Typical Application Circuit  
Notes:  
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.  
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of +3 to +8 Volts applied to the CMOS logic gates  
and to pin 4 of the RF switch.  
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation.  
4. Highest RF signal power capability is achieved with Vdd set to +8V. The switch will operate properly (but at lower RF power  
capability) at bias voltages down to +3V.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
10 - 355  
HMC574MS8 / 574MS8E  
v02.0308  
GaAs MMIC 5 WATT T/R SWITCH  
DC - 3 GHz  
Evaluation Circuit Board  
10  
List of Materials for Evaluation PCB 104124 [1]  
The circuit board used in the final application should  
be generated with proper RF circuit design tech-  
niques. Signal lines at the RF port should have 50  
ohm impedance and the package ground leads and  
package bottom should be connected directly to the  
ground plane similar to that shown above. The eval-  
uation circuit board shown above is available from  
Hittite Microwave Corporation upon request.  
Item  
Description  
J1 - J3  
J4 - J7  
C1 - C3  
C4  
PCB Mount SMA RF Connector  
DC Pin  
100 pF capacitor, 0402 Pkg.  
10,000 pF capacitor, 0603 Pkg.  
100 Ohm resistor, 0402 Pkg.  
HMC574MS8 / HMC574MS8E T/R Switch  
104122 Evaluation PCB  
R1, R2  
U1  
[2]  
PCB  
[1] Reference this number when ordering complete evaluation PCB  
[2] Circuit Board Material: Rogers 4350  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
10 - 356  
HMC574MS8 / 574MS8E  
v02.0308  
GaAs MMIC 5 WATT T/R SWITCH  
DC - 3 GHz  
Notes:  
10  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
10 - 357  

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