476SC70E [HITTITE]
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz; 的SiGe HBT增益模块放大器MMIC ， DC - 6 GHz的
| 型号： | 476SC70E |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz |
| 文件： | 总6页 (文件大小：205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC476SC70 / 476SC70E
v01.0110
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Typical Applications
The HMC476SC70(E) is ideal for:
Features
P1dB Output Power: +12 dBm
9
• Cellular / PCS / 3G
Gain: 20 dB
• WiBro / WiMAX / 4G
Output IP3: +24 dBm
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Cascadable 50 Ohm I/Os
Single Supply: +5V to +12V
Industry Standard SC70 Package
Functional Diagram
General Description
The HMC476SC70(E) is a SiGe Heterojunction Bipolar
Transistor (HBT) Gain Block MMIC SMT amplifiers
covering DC to 6 GHz. This industry standard SC70
packaged amplifier can be used as a cascadable 50
Ohm RF/IF gain stage as well as a LO or PA driver with
up to +12 dBm output power. The HMC476SC70(E)
offers 20 dB of gain with a +24 dBm output IP3 at 850
MHz while requiring only 35 mA from a single positive
supply. The Darlington topology results in reduced
sensitivity to normal process variations and excellent
gain stability over temperature while requiring a
minimal number of external bias components.
Electrical Specifications, Vs= 5V, Rbias= 56 Ohm, TA = +25° C
Parameter
Min.
Typ.
Max.
Units
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
16
13
9
19
16
12
dB
dB
dB
Gain
Gain Variation Over Temperature
Input Return Loss
DC - 6 GHz
0.008
0.012
dB/ °C
DC - 4 GHz
4.0 - 6.0 GHz
20
15
dB
dB
DC - 4 GHz
4.0 - 6.0 GHz
20
13
dB
dB
Output Return Loss
Reverse Isolation
DC - 6 GHz
18
dB
0.5 - 4.0 GHz
4.0 - 6.0 GHz
9.0
8.0
12.0
11.0
dBm
dBm
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 4.0 GHz
4.0 - 6.0 GHz
24
22
dBm
dBm
0.5 - 4.0 GHz
4.0 - 6.0 GHz
2.5
3.0
dB
dB
Noise Figure
Supply Current (Icq)
35
42
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 86
HMC476SC70 / 476SC70E
v01.0110
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
25
20
15
10
5
24
9
20
16
S21
S11
S22
0
12
-5
+25C
+85C
-40C
-10
-15
-20
-25
-30
8
4
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
6
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
-5
+25C
+85C
-40C
+25C
+85C
-40C
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
0
1
2
3
4
5
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
8
-5
+25 C
+85 C
-40 C
6
4
2
0
+25C
+85C
-40C
-10
-15
-20
-25
-30
0
1
2
3
4
5
6
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 87
HMC476SC70 / 476SC70E
v01.0110
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
P1dB vs. Temperature
Psat vs. Temperature
18
18
9
15
12
9
15
12
9
+25 C
+85 C
-40 C
+25C
+85C
-40C
6
6
3
0
3
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc = 35 mA @ 850 MHz
Output IP3 vs. Temperature
30
28
24
20
16
12
26
22
+25C
+85C
-40C
18
14
10
8
4
0
Gain
P1dB
Psat
IP3
0
1
2
3
4
5
6
5
6
7
8
9
10
FREQUENCY (GHz)
Vs (Vdc)
Icc vs. Vcc Over Temperature for
Fixed Vs = 5V, RBIAS = 56 Ohms
42
40
38
36
34
32
30
+85 C
+25 C
-40 C
2.7
2.8
2.9
3
3.1
3.2
Vcc (V)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 88
HMC476SC70 / 476SC70E
v01.0110
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Collector Bias Current (Icc)
RF Input Power (RFIN)(Vcc = +2.4V)
Junction Temperature
+6V
9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
45 mA
+5 dBm
150 °C
Continuous Pdiss (T = 85 °C)
(derate 7.75 mW/°C above 85 °C)
0.504 W
Thermal Resistance
(junction to lead)
129 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD MATERIAL: COPPER ALLOY
3. LEAD PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking
476
HMC476SC70
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1 [2]
HMC476SC70E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
476E
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 89
HMC476SC70 / 476SC70E
v01.0110
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
9
1, 2, 4, 5
GND
RFIN
These pins must be connected to RF/DC ground.
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
6
RFOUT
RF output and DC Bias (Vcc) for the output stage.
Application Circuit
Recommended Bias Resistor Values
for Icc= 35 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
5V
8V
10V
12V
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
RBIAS VALUE
56 Ω
1/8 W
130 Ω
1/4 W
180 Ω
1/4 W
240 Ω
1/2 W
RBIAS POWER RATING
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
900
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
5200
6.8 nH
100 pF
5800
3.3 nH
100 pF
L1
270 nH
0.01 μF
56 nH
100 pF
C1, C2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 90
HMC476SC70 / 476SC70E
v01.0110
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Evaluation PCB
9
List of Materials for Evaluation PCB 118038 [1]
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads should be connected directly to the ground
plane similar to that shown. A sufficient number
of via holes should be used to connect the top
and bottom ground planes. The evaluation board
should be mounted to an appropriate heat sink. The
evaluation circuit board shown is available from
Hittite upon request.
Item
J1 - J2
J3 - J4
C1 - C3
C4
Description
PCB Mount SMA Connector
DC Pin
100 pF Capacitor, 0402 Pkg.
1000 pF Capacitor, 0603 Pkg.
2.2 μF Capacitor, Tantalum
50 Ohm Resistor, 1210 Pkg.
18 nH Inductor, 0603 Pkg.
HMC476SC70(E)
C5
R1
L1
U1
[2]
PCB
117360 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 91
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