441LP3E [HITTITE]
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz; 的GaAs PHEMT MMIC中功率放大器， 6.5 - 13.5 GHz的
| 型号： | 441LP3E |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz |
| 文件： | 总6页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC441LP3 / 441LP3E
v04.0508
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.5 - 13.5 GHz
Typical Applications
Features
The HMC441LP3 / HMC441LP3E is a medium PA for:
Gain: 14 dB
• Point-to-Point Radios
Saturated Power: +20 dBm @ 20% PAE
• Point-to-Multi-Point Radios
• VSAT
Single Supply Voltage:
+5V w/ Optional Gate Bias
50 Ohm Matched Input/Output
• LO Driver for HMC Mixers
• Military EW & ECM
16 Lead 3x3mm SMT Package: 9mm2
11
Functional Diagram
General Description
The HMC441LP3 & HMC441LP3E are broadband
GaAs PHEMT MMIC Medium Power Amplifiers which
operate between 6.5 and 13.5 GHz. The leadless
plastic QFN surface mount packaged amplifier
provides 14 dB of gain, +20 dBm saturated power
at 20% PAE from a +5V supply voltage. An optional
gate bias is provided to allow adjustment of gain,
RF output power, and DC power dissipation. This
50 Ohm matched amplifier does not require any
external components making it an ideal linear gain
block or driver for HMC SMT mixers.
Vgg1, Vgg2: Optional Gate Bias
Electrical Specifications, TA = +25° C, Vdd = 5V, Vgg1 = Vgg2 = Open
Parameter
Min.
Typ.
6.5 - 8.0
13
Max.
Min.
Typ.
8.0 - 11.0
14
Max.
Min.
Typ.
11.0 - 13.5
13
Max.
Units
GHz
dB
Frequency Range
Gain
10
12
10
Gain Variation Over Temperature
Input Return Loss
0.02
12
0.025
0.02
15
0.025
0.02
14
0.025
dB/ °C
dB
Output Return Loss
12
15
13
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
13
23
16
15
26
18
14
26
17
dBm
dBm
dBm
dB
18.5
26
20
19.5
29
29
5.0
4.5
4.75
90
Supply Current (Idd)
90
115
90
115
115
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 94
HMC441LP3 / 441LP3E
v04.0508
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.5 - 13.5 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
20
15
10
5
20
16
S21
S11
S22
12
0
-5
+25 C
+85 C
-40 C
8
4
0
-10
-15
-20
-25
11
4
5
6
7
8
9
10 11 12 13 14 15 16
6
7
8
9
10
11
12
13
14
14
14
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
-5
-10
-15
-20
-25
-5
-10
-15
-20
-25
6
7
8
9
10
11
12
13
14
6
7
8
9
10
11
12
13
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
24
24
20
16
12
8
20
16
12
8
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
4
4
6
7
8
9
10
11
12
13
14
6
7
8
9
10
11
12
13
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 95
HMC441LP3 / 441LP3E
v04.0508
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.5 - 13.5 GHz
Power Compression @ 10 GHz
Output IP3 vs. Temperature
22
20
18
16
14
12
10
8
36
Pout
Gain
PAE
32
28
24
11
6
+25 C
+85 C
-40 C
20
16
4
2
0
-10
-6
-2
2
6
10
6
7
8
9
10
11
12
13
14
INPUT POWER (dBm)
FREQUENCY (GHz)
Gain, Power & Idd
Gain, Power & Output IP3
vs. Gate Voltage @ 10 GHz
vs. Supply Voltage @ 10 GHz
210
35
32
30
28
180
150
120
90
30
Gain
P1dB
Psat
Idd
26
25
Gain
P1dB
24
22
Psat
IP3
20
15
10
5
20
18
16
14
12
10
60
30
0
0
3
3.5
4
4.5
5
5.5
-2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2
Vgg1, Vgg2 Gate Volltage (V)
0
Vdd Supply Voltage (V)
Noise Figure vs. Temperature
Reverse Isolation vs. Temperature
10
0
+25 C
+85 C
-40 C
8
6
4
2
0
-10
+25 C
-20
+85 C
-40 C
-30
-40
-50
6
7
8
9
10
11
12
13
14
6
7
8
9
10
11
12
13
14
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 96
HMC441LP3 / 441LP3E
v04.0508
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.5 - 13.5 GHz
Absolute Maximum Ratings
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+6 Vdc
Vdd (V)
Idd (mA)
Gate Bias Voltage (Vgg1,Vgg2)
RF Input Power (RFIN)(Vdd = +5 Vdc)
Channel Temperature
-8 to 0 Vdc
+15 dBm
175 °C
+5.5
92
+5.0
90
+4.5
88
Continuous Pdiss (T = 85 °C)
(derate 8.5 mW/°C above 85 °C)
+3.3
83
0.76 W
+3.0
82
Thermal Resistance
(channel to ground paddle)
118.2 °C/W
Note: Amplifier will operate over full voltage range shown above
11
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
441
XXXX
HMC441LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
441
XXXX
MSL1 [2]
HMC441LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 97
HMC441LP3 / 441LP3E
v04.0508
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.5 - 13.5 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 3-5, 8-10,
12-14, 16
N/C
This pin may be connected to RF/DC ground.
This pin is AC coupled
and matched to 50 Ohms.
2
RFIN
11
Optional gate control for amplifier. If left open, the amplifier
will run at standard current. Negative voltage applied will
reduce current.
6, 7
11
Vgg1, Vgg2
RFOUT
This pin is AC coupled
and matched to 50 Ohms.
Power Supply Voltage for the amplifier. An external bypass
capacitor of 100 pF is required.
15
Vdd
GND
Package bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 98
HMC441LP3 / 441LP3E
v04.0508
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.5 - 13.5 GHz
Evaluation PCB
11
List of Materials for Evaluation PCB 106705 [1]
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
Item
Description
J1 - J2
J3 - J7
C1
PCB Mount SMA Connector
DC Pin
4.7 μF Capacitor, Tantalum
100 pF Capacitor, 0402 Pkg.
HMC441LP3 / HMC441LP3E Amplifier
106639 Evaluation PCB, 10 mils
C2 - C4
U1
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 99
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