413QS16GE [HITTITE]
GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz; 砷化镓的InGaP HBT MMIC功率放大器， 1.6 - 2.2 GHz的
| 型号： | 413QS16GE |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz |
| 文件： | 总8页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Typical Applications
Features
This amplifier is ideal for use as a power/driver
amplifier for 1.6 - 2.2 GHz applications:
Gain: 23 dB
Saturated Power: +29.5 dBm
42% PAE
• Cellular / PCS / 3G
• Portable & Infrastructure
• Wireless Local Loop
Supply Voltage: +2.75V to +5V
Power Down Capability
Low External Part Count
Included in the HMC-DK002 Designer’s Kit
11
Functional Diagram
General Description
The HMC413QS16G & HMC413QS16GE are high
efficiency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power amplifiers which operate
between 1.6 and 2.2 GHz. The amplifier is packaged
in a low cost, surface mount 16 leaded package with
an exposed base for improved RF and thermal perfor-
mance. With a minimum of external components, the
amplifier provides 23 dB of gain, +29.5 dBm of satu-
rated power at 42% PAE from a +5V supply voltage.
The amplifier can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control.
Electrical Specifications, TA = +25° C, As a Function of Vs, Vpd = 3.6V
Vs= 3.6V
Typ.
Vs= 5V
Parameter
Frequency
Units
Min.
Max.
Min.
Typ.
Max.
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.1 GHz
2.1 - 2.2 GHz
18
19
18
17
21
22
21
20
19
20
19
18
22
23
22
21
dB
dB
dB
dB
Gain
Gain Variation Over Temperature
Input Return Loss
1.6 - 2.2 GHz
1.6 - 2.2 GHz
1.6 - 2.2 GHz
0.025
10
0.035
0.025
10
0.035
dB/°C
dB
Output Return Loss
8
9
dB
1.6 - 1.7 GHz
1.7 - 2.2 GHz
20
21
23
24
23
24
26
27
dBm
dBm
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
1.6 - 1.7 GHz
1.7 - 2.2 GHz
25.5
26.5
28.5
29.5
dBm
dBm
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.2 GHz
32
33
32
35
36
35
36
37
36
39
40
39
dBm
dBm
dBm
Output Third Order Intercept (IP3)
Noise Figure
1.6 - 2.2 GHz
5.5
5.5
dB
mA
mA
ns
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd= 0V/3.6V
Vpd= 3.6V
0.002/220
0.002/270
7
7
tON, tOFF
80
80
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 50
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Gain vs. Temperature, Vs= 3.6V
Gain vs. Temperature, Vs= 5V
30
25
20
15
10
5
30
25
20
15
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
10
5
11
0
0
1.3
1.5
1.7
1.9
2.1
2.3
2.5
2.5
2.5
1.3
1.5
1.7
1.9
2.1
2.3
2.3
2.3
2.5
2.5
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Return Loss, Vs= 3.6V
Return Loss, Vs= 5V
0
0
S11
S22
-4
-8
-4
-8
-12
-16
-20
-12
-16
-20
S11
S22
1.3
1.5
1.7
1.9
2.1
2.3
1.3
1.5
1.7
1.9
2.1
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature, Vs= 3.6V
P1dB vs. Temperature, Vs= 5V
32
28
24
20
32
28
24
20
16
16
+25 C
+25 C
+85 C
+85 C
-40 C
-40 C
12
12
8
4
0
8
4
0
1.3
1.5
1.7
1.9
2.1
2.3
1.3
1.5
1.7
1.9
2.1
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 51
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Psat vs. Temperature, Vs= 3.6V
Psat vs. Temperature, Vs= 5V
32
28
24
20
16
12
8
32
28
24
20
16
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
12
11
8
4
0
4
0
1.3
1.5
1.7
1.9
2.1
2.3
2.5
1.3
1.5
1.7
1.9
2.1
2.3
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Power Compression@ 1.9 GHz, Vs= 3.6V
Power Compression@ 1.9 GHz, Vs= 5V
46
46
42
42
38
34
30
26
22
18
14
10
6
38
34
30
26
22
18
14
10
6
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm)
Gain (dB)
PAE (%)
2
2
-12 -10 -8
-6
-4
-2
0
2
4
6
8
10
-12 -10 -8 -6 -4 -2
0
2
4
6
8
10 12 14
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature, Vs= 3.6V
Output IP3 vs. Temperature, Vs= 5V
42
38
34
30
44
40
36
32
26
28
+25 C
+25 C
+85 C
+85 C
-40 C
-40 C
22
24
18
14
10
20
16
12
1.3
1.5
1.7
1.9
2.1
2.3
2.5
1.3
1.5
1.7
1.9
2.1
2.3
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 52
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Reverse Isolation
Power Down Isolation, Vs= 3.6V
vs. Temperature, Vs= 3.6V
0
0
-10
-10
-20
-30
-40
-50
-60
-20
+25 C
+85 C
-40 C
-30
-40
-50
-60
-70
11
1.3
1.5
1.7
1.9
2.1
2.3
2.5
1.3
1.5
1.7
1.9
2.1
2.3
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure vs. Temperature, Vs= 3.6V
Noise Figure vs. Temperature, Vs= 5V
10
10
8
6
8
6
4
4
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
2
0
2
0
1.5
1.7
1.9
2.1
2.3
2.5
1.5
1.7
1.9
2.1
2.3
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain & Power vs.
Supply Voltage @ 1.9 GHz
Gain, Power & Quiescent Supply
Current vs. Vpd @ 1.9 GHz, Vcc = +3.6V
34
330
30
28
25
22
19
16
13
32
30
28
26
24
22
20
18
16
14
29
270
210
150
90
Icq
28
27
26
25
24
23
22
21
20
Gain
Gain
P1dB
Psat
P1dB
Psat
30
2.75
3.25
3.75
4.25
4.75
5.25
1.5
1.75
2
2.25
2.5
2.75
3
3.25
3.5
Vcc SUPPLY VOLTAGE (Vdc)
Vpd (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 53
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+5.5 Vdc
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Control Voltage (Vpd1, Vpd2)
+4.0 Vdc
+15 dBm
150 °C
RF Input Power (RFIN)(Vs = +5Vdc,
Vpd = +3.6 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 24 mW/°C above 85 °C)
1.56 W
11
Thermal Resistance
(junction to ground paddle)
42 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
HMC413
XXXX
HMC413QS16G
HMC413QS16GE
Low Stress Injection Molded Plastic
Sn/Pb Solder
HMC413
XXXX
MSL1 [2]
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 54
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
Ground: Backside of package has exposed metal ground slug that
must be connected to ground thru a short path. Vias under the device
are required.
1, 2, 4, 5, 7, 8,
9, 10, 13, 15
GND
Power Control Pin. For maximum power, this pin should be connected
to 3.6V. For 5V operation, a dropping resistor is required. A higher
voltage is not recommended. For lower idle current, this voltage can
be reduced.
11
3, 14
Vpd1, Vpd2
6
RFIN
This pin is AC coupled and matched to 50 Ohms from 1.6 to 2.2 GHz.
RF output and bias for the output stage.
11, 12
RFOUT
Power supply voltage for the first amplifier stage. An external bypass
capacitor of 330 pF is required as shown in the application schematic.
16
Vcc
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 55
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Evaluation PCB
11
* For 5V operation on Vctl line,
select R1, R2 such that 3.6V is
presented on Pins 3 and 14.
List of Materials for Evaluation PCB 105000 [1]
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
Item
J1 - J2
J3
Description
PCB Mount SMA RF Connector
2 mm DC Header
C1
2.2 pF Capacitor, 0603 Pkg.
10 pF Capacitor, 0402 Pkg.
330 pF Capacitor, 0603 Pkg.
2.2 μF Capacitor, Tantalum
16 nH Inductor 0603 Pkg.
C2
C3 - C4
C5
L1
HMC413QS16G / HMC413QS16GE
Amplifier
U1
[2]
PCB
105018 Eval Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 56
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Application Circuit
11
TL1
50 Ohm
0.1”
TL2
50 Ohm
0.15”
TL3
50 Ohm
0.1”
Impedance
Length
* For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 3 and 14.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 57
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