374E [HITTITE]
SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz; SMT PHEMT低噪声放大器， 0.3 - 3.0 GHz的
| 型号： | 374E |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz |
| 文件： | 总6页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC374 / 374E
v00.0405
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
8
Typical Applications
The HMC374 / HMC374E is ideal for:
• Cellular/PCS/3G
Features
Single Supply: Vdd = +2.75 to +5.5V
Low Noise Figure: 1.5 dB
• WCS, MMDS & ISM
High Output IP3: +37 dBm
• Fixed Wireless & WLAN
• Private Land Mobile Radio
No External Matching Required
Functional Diagram
General Description
The HMC374 & HMC374E are general purpose broad
band Low Noise Amplifiers (LNA) for use in the 0.3 -
3 GHz frequency range. The LNA provides 15 dB of
gain and a 1.5 dB noise figure from a single positive
supply of +2.75 to +5.5V. The low noise figure coupled
with a high P1dB (22 dBm) and high OIP3 (37 dBm)
make this part ideal for cellular applications. The
compact LNA design utilizes on-chip matching for
repeatable gain and noise figure performance. To
minimize board area the design is offered in a low cost
SOT26 package that occupies only 0.118” x 0.118”.
Electrical Specifications, TA = +25° C, Vdd= +5V
Parameter
Frequency Range
Min.
Typ.
0.3 - 1.0
15
Max.
Min.
Typ.
1.0 - 2.0
13
Max.
Min.
6
Typ.
2.0 - 3.0
9
Max.
Units
GHz
dB
Gain
12
10
Gain Variation Over Temperature
Noise Figure
0.01
1.5
5
0.02
1.9
0.01
1.6
0.02
2.0
0.01
1.8
0.02
2.2
dB/°C
dB
Input Return Loss
8
13
dB
Output Return Loss
7
9
9
dB
Output 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd) (Vdd = +5V)
22
22
22
dBm
dBm
dBm
mA
23
23
23
37
37
37
90
90
90
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 60
HMC374 / 374E
v00.0405
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
8
Broadband Gain & Return Loss
Gain vs.Temperature
20
15
10
5
20
16
12
8
S21
S11
S22
0
-5
-10
-15
-20
+25C
+85C
-40C
4
0
0
0.5
1
1.5
2
2.5
3
3.5
4
3.3
3
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
3
3
3
3.3
3.3
3.3
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs.Temperature
Output Return Loss vs.Temperature
0
0
+25C
+85C
-40C
-2
-4
-8
+25C
+85C
-40C
-4
-6
-12
-16
-20
-8
-10
-12
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
3
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure vs.Temperature
Output IP3 vs.Temperature
5
40
39
38
37
36
4
+25C
+85C
-40C
3
2
1
0
35
34
33
32
31
30
+25C
+85C
-40C
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 61
HMC374 / 374E
v00.0405
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
8
P1dB vs.Temperature
Psat vs.Temperature
25
24
23
22
21
20
19
18
17
16
15
25
24
23
22
21
20
19
18
17
16
15
+25C
+85C
-40C
+25C
+85C
-40C
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
3
3.3
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
3
3.3
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs.Temperature
Power Compression @ 2 GHz
0
35
30
Pout
-5
Gain
+25C
+85C
-40C
PAE
25
-10
20
15
10
5
-15
-20
-25
0
-30
-5
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
3
3.3
-20
-15
-10
-5
0
5
10
15
FREQUENCY (GHz)
INPUT POWER (dBm)
Gain, Noise Figure & Power vs.
Supply Voltage @ 2 GHz
Current vs. Power @ 2 GHz
8
7
6
5
4
3
2
1
0
25
104
102
100
98
23
21
19
Gain
P1dB
17
15
13
11
9
96
Noise Figure
94
92
90
-20
-15
-10
-5
0
5
10
15
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
INPUT POWER (dBm)
Vdd (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 62
HMC374 / 374E
v00.0405
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
8
Absolute Maximum Ratings
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+7.0 Vdc
Vdd (V)
Idd (mA)
RF Input Power (RFIN)(Vdd = +5.0 Vdc)
Channel Temperature
15 dBm
2.7
89
150 °C
3.0
5.0
5.5
89
90
90
Continuous Pdiss (T = 85 °C)
(derate 7.5 mW/°C above 85 °C)
0.488 W
Thermal Resistance
(channel to lead)
133 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H374
XXXX
HMC374
Low Stress Injection Molded Plastic
Sn/Pb Solder
374E
XXXX
MSL1 [2]
HMC374E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 63
HMC374 / 374E
v00.0405
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
8
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
These pins may be connected to RF/DC ground.
Performance will not be affected.
1,4
N/C
2, 5
GND
These pins must be connected to RF/DC ground.
This pin is DC coupled.
An off-chip DC blocking capacitor is required.
3
6
IN
RF output and DC Bias for the output stage.
See application circuit for off-chip components.
OUT
Application Circuit
Recommended Component Values
C1, C2
C3
150 pF
1,000 pF
4.7 μF
C4
L1
27 nH
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 64
HMC374 / 374E
v00.0405
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
8
Evaluation PCB
List of Materials for Evaluation PCB 109258 [1]
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads should be connected directly to the
ground plane similar to that shown above. A suffi-
cient number of via holes should be used to connect
the top and bottom ground planes. The evaluation
circuit board shown is available from Hittite upon
request.
Item
J1, J2
J3, J4
C1, C2
C3
Description
PCB Mount SMA Connector
DC Pin
150 pF Capacitor, 0402 Pkg.
1000 pF Capacitor, 0603 Pkg.
4.7 Capacitor, Tantalum
27 nH Inductor, 0603 Pkg.
HMC374 / HMC374E Amplifier
109256 Evaluation PCB
C4
L1
U1
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Roger 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 65
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